TP-Analog Electronic I3GEE

Institute of Technology Cambodia

Department of Electrical and Energy Engineering

Laboratory Report

Laboratory:
Analog Electronic

Topic: Lab 03: BJT Voltage-Divider Biasing (Variation 3)

Research led by:

Mr. KLENG Vireak
Mr. PHON Lundy

Reported by: Group I3GEE_B1-4

Responsibility in Position for the

Name ID Lab report
LON LIDA
e20211271 Amperemeter Researcher
LY SOKPANHA
e20210334 Voltmeter Facilitator
MACH LINA
e20210722 Data Input Data analyzer
MOM SOKANYTA
e20210074 Documenter Writer
MORK SENGYEAK
e20211744 DC power supply Researcher

Academic Year: 2023-2024

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CONTENT
1. TABLE OF CONTENT

2. OBJECTIVE ...................................................................................................................... 2
3. APPARATUS..................................................................................................................... 2
4. INTRODUCTION ............................................................................................................. 2
5. PROCEDURES ................................................................................................................. 3
6. QUESTIONS ..................................................................................................................... 7
7. CONCLUSION .................................................................................................................. 8

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2. OBJECTIVE

The objectives of this lab experiments are:

• To understand the operation of Bipolar Junction Transistor (BJT) in Common-Emitter (CE)

Configuration.

• To understand the characteristic between output and input of BJT during CE mode

3. APPARATUS

Table 3.1: Component Used

No. Device/Component names Model name Value

1 Adjustable DC Power Supply SIGLENT SPD-3303C 1
2 Multi-meter 1
3 NPN Transistor 2N2222 2N3904 BC547B 3
10kΩ, 3.3kΩ,
Resistor
4 4.7kΩ, 5.6kΩ

4. INTRODUCTION

Voltage-divider biasing is a popular method for biasing bipolar junction transistors (BJTs). It
involves using a voltage divider network composed of resistors to set the base bias voltage and
establish the desired operating point of the BJT.

Here's an overview of BJT voltage-divider biasing:

1. Voltage Divider Network: The voltage divider network consists of two resistors
connected in series between the BJT's supply voltage (Vcc) and ground. The
connection point between the resistors serves as the base bias voltage (Vbb).
2. Bias Current: To establish the bias current (Ib), the voltage divider should be designed
such that it sets the appropriate voltage at the base terminal. This voltage is
determined by the resistive ratio of the divider network.
3. Operating Point: The bias voltage (Vbb) determines the operating point of the BJT.
By setting the bias voltage appropriately, the transistor can be biased to operate in the
active region where it exhibits the desired amplification characteristics.

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4. Stability: Voltage-divider biasing provides inherent stability as the bias voltage is

independent of the transistor's characteristics. However, variations in the transistor
parameters due to temperature changes may affect the operating point.
5. Design Considerations: When designing a voltage-divider bias configuration, you
need to consider the resistive values of the voltage divider network. The choice of
resistors should ensure that the desired bias current is achieved and that the operating
point remains stable over temperature variations.
6. Calculation: To calculate the resistor values, you need to determine the desired bias
current and estimate the base-emitter voltage (Vbe) of the transistor. With these
values, you can use Ohm's Law to find the appropriate resistor values for the voltage
divider network.

5. PROCEDURES

TASK I DC Load Line

Step 1: Consider the circuit of Figure 1c using Vcc = 10 volts, R1 = 10kΩ, R2 = 3.3kΩ, Re =
4.7kΩ and Rc = 5.6kΩ. Using the approximation of a lightly loaded “stiff ” voltage-divider,
Determine the ideal end points of the DC load line and the Q point, and record these in Table
2. Circuit Voltages and Beta (β)

• Step 2: Continuing with the component values indicated in step one, compute the theoretical
base, emitter and collector voltages, and record them in Table 3 (Theory).

• Step 3: Build the circuit of Figure 1c using Vcc = 10 volts, R1 = 10kΩ, R2 = 3.3kΩ, Re =
4.7kΩ and Rc = 5.6kΩ. Measure the base, emitter and collector voltages and record them in
the row of Table 3 (Experiment). Compute the deviations between theoretical and experimental
and record these in the first row of Table 4 (%Deviation).

• Step 4: Measure the base and collector currents and record these in the first row of Table 5.
Based on these, compute and record the experimental beta as well.

• Step 5: Swap the transistor with the second transistor and repeat Step 3 and Step 4 using the
second rows of the tables.

• Step 6: Swap the transistor with the third transistor and repeat Step 3 and Step 4 using the
third rows of the tables

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Figure 2: Circuit Figure 1&3: measure volatage collecttor and base

Figure 4&5: measure current collecttor and base

Calculation

• For Transistor 2N2222

3.3
𝑉𝑖𝑛 = 10 × = 2.51𝑉
3.3 + 10
𝑅𝑇𝐻 = 3.3//10 = 2.481𝑘Ω
𝑉𝑖𝑛 − 𝑉𝐵𝐸 2.51 − 0.7
𝐼𝐵 = =
(𝑅𝑇ℎ + (𝛽 + 1)𝑅𝐸 2.481 + (101)(4.7) × 10−3

= 3.81 × 10−6 = 3.81𝜇𝐴

𝐼𝑐 = 𝛽𝐼𝐵 = 100 × 3.81 = 381𝜇𝐴

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 = 3.81 + 381 = 384.81𝜇𝐴

• 𝑉𝐵 ; 𝑉𝐶 ; 𝑉𝐸

𝑉𝑇ℎ = 𝐼𝐵 𝑅𝑇ℎ − 𝑉𝐵 = 0

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𝑉𝐵 = 𝑉𝑇ℎ − 𝐼𝐵 𝑅𝑇ℎ = 2.51 − (3.81)(2.48) = 2.50𝑉

𝑉𝐶 = 𝑅𝐶 𝐼𝐶 = 381 × 10−6 × 5.6 × 10−3 = 2.13𝑉

𝑉𝐸 = 𝑅𝐸 𝐼𝐸 = 384.81 × 10−6 × 4.7 × 103 = 1.8𝑉

Thus 𝑉𝐵 = 2.50𝑉 𝑉𝐶 = 2.13𝑉 𝑉𝐸 = 1.8𝑉

• For Transistor 2N3904

3.3
𝑉𝑖𝑛 = 10 × = 2.51𝑉
3.3+10

𝑅𝑇𝐻 = 3.3//10 = 2.481𝑘Ω

𝑉𝑖𝑛 −𝑉𝐵𝐸 2.51−0.7
𝐼𝐵 = =
(𝑅𝑇ℎ +(𝛽+1)𝑅𝐸 2.481+(131)(4.7)×10−3

= 2.93 × 10−6 = 2.93𝜇𝐴

𝐼𝑐 = 𝛽𝐼𝐵 = 130 × 2.93 = 380.9𝜇𝐴

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 = 2.93 + 380.9 = 383.83𝜇𝐴

• 𝑉𝐵 ; 𝑉𝐶 ; 𝑉𝐸

𝑉𝑇ℎ = 𝐼𝐵 𝑅𝑇ℎ − 𝑉𝐵 = 0

𝑉𝐵 = 𝑉𝑇ℎ − 𝐼𝐵 𝑅𝑇ℎ = 2.51 − (2.93)(2.481) = 2.50𝑉

𝑉𝐶 = 𝑅𝐶 𝐼𝐶 = 380.9 × 10−6 × 5.6 × 10−3 = 2.133𝑉

𝑉𝐸 = 𝑅𝐸 𝐼𝐸 = 383.83 × 4.7 = 1.804𝑉

Thus 𝑉𝐵 = 2.50𝑉; 𝑉𝐸 = 1.804𝑉; 𝑉𝐶 = 2.133𝑉

• For Transistor BC547B

3.3
𝑉𝑖𝑛 = 10 × = 2.51𝑉
3.3 + 10
𝑅𝑇𝐻 = 3.3//10 = 2.481𝑘Ω
𝑉𝑖𝑛 −𝑉𝐵𝐸 2.51−0.7
𝐼𝐵 = = = 1.91𝜇𝐴
(𝑅𝑇ℎ +(𝛽+1)𝑅𝐸 2.481+(201)(4.7)×10−3

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𝐼𝑐 = 𝛽𝐼𝐵 = 200 × 1.91 = 382𝜇𝐴

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 = 1.91 + 382 = 383.91𝜇𝐴

• 𝑉𝐵 ; 𝑉𝐶 ; 𝑉𝐸

𝑉𝑇ℎ = 𝐼𝐵 𝑅𝑇ℎ − 𝑉𝐵 = 0

𝑉𝐵 = 𝑉𝑇ℎ − 𝐼𝐵 𝑅𝑇ℎ = 2.51 − (1.91)(2.481) = 2.505𝑉

𝑉𝐶 = 𝑅𝐶 𝐼𝐶 = 382 × 5.6 = 2.139𝑉

𝑉𝐸 = 𝑅𝐸 𝐼𝐸 = 383.91 × 4.7 = 1.804𝑉

Thus 𝑉𝐵 = 2.505𝑉; 𝑉𝐸 = 1.804𝑉; 𝑉𝐶 = 2.139𝑉

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Table 2: Data DC Load Line

VCE (Cutoff) 10v
IC (Sat) 0.97 mA
VCEQ 5v
ICQ 1.7mA

Table 3: Data voltage

𝑻𝒓𝒂𝒏𝒔𝒊𝒔𝒕𝒐𝒓 𝑽𝑩 𝒕𝒉𝒆𝒐𝒓𝒚 𝑽𝑬 𝒕𝒉𝒆𝒐𝒓𝒚 𝑽𝒄 𝒕𝒉𝒆𝒐𝒓𝒚 𝑽𝑩 𝑬𝒙𝒑 𝑽𝑬 𝑬𝒙𝒑 𝑽𝑪 𝑬𝒙𝒑

2𝑁2222 2.5 1.8 2.13 2.404 1.79 2.10
2𝑁3904 2.5 1.804 2.133 2.407 1.79 2.121
BC547B 2.505 1.804 2.139 2.44 1.842 2.40

Table 4: : Data of voltage deviation

𝑻𝒓𝒂𝒏𝒔𝒊𝒔𝒕𝒐𝒓 % Deviation VB % Deviation VE % Deviation VC

2𝑁2222 3.33% 0.56% 1.40%
2𝑁3904 1.04% 0.56% 0.47%
BC547B 2.4% 0.05% 1.64%

Table 5: Data transistor

Transistor 𝑰𝑩 (mA) 𝑰𝑪 (mA) β

2𝑁2222 0.03 0.391 143
2𝑁3904 0.03 0.383 130
BC547B 0.02 0.395 330

Table 6: Data voltage

𝑽𝑩 sim 𝑽𝑬 sim 𝑽𝑪 sim

2.473 1.873 2.342

6. QUESTIONS

Question 1: Based on the results of Table 2, is the transistor operating in saturation, cutoff or
in the linear region?

Based on the result of table 2, the transistor is operating in the linear region or active mode.

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Question 2: Based on the results of Table 3 and Table 4, does the circuit achieve a stable
operating point when compared to beta?

Considering the given β (Beta) value of 143,130 and 330 which represents the current gain of
the transistor, we can say that the circuit achieves a stable operating point compared to β.
However, it's important to note that other factors, such as temperature variations and load
conditions, can affect the stability of the operating point in practical applications.

Question 3: What is the required design condition for the voltage-divider bias to achieve high
Q point stability in spite of changes in beta?

The required design condition for achieving high Q point stability in voltage-divider bias
despite changes in beta is to ensure that the biasing resistors are chosen such that the base
current is much smaller than the collector current. This ensures that changes in beta will have
minimal effect on the Q point stability. Additionally, using a bypass capacitor in parallel with
the emitter resistor can also help improve stability by providing negative feedback to
compensate for changes in beta. Finally, selecting transistors with higher beta values can also
improve stability in voltage-divider bias circuits.

Question 4: Using the original circuit, determine a new value for the collector resistance that
will yield collector voltage of approximately half of the power supply value.

To determine the new value for the collector resistance, we can use the formula:Vc = Vcc *
(Rc / (Rc + Re))Where: Vc = collector voltage Vcc = power supply voltageRc = collector
resistanceRe = emitter resistance.We want the collector voltage to be approximately half of the
power supply voltage, so we can rearrange the formula to solve for Rc: Rc = (Vc / Vcc - Vc) *
Re. Let's assume the power supply voltage (Vcc) is 12V and the emitter resistance (Re) is 1kΩ.
Using these values, we can calculate the new collector resistance: Rc = (6V / 12V - 6V) * 1kΩ
= (0.5) * 1kΩ = 500ΩSo, a new value for the collector resistance that will yield a collector
voltage of approximately half of the power supply value is 500Ω.

7. CONCLUSION

The voltage-divider biasing configuration is a common way to bias a BJT transistor for stable
operation. It involves using a resistor network (voltage divider) to establish the base bias
voltage.The DC load line, on the other hand, represents the various possible operating points
of the BJT transistor on a graph. It shows the relationship between collector current (Ic) and

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collector-emitter voltage (Vce) for different biasing conditions. The BJT voltage-divider
biasing configuration, combined with the DC load line, allows us to analyze the operating
point and determine the approximate Q-point (quiescent point) of the transistor. This helps in
understanding the transistor's behavior and design considerations.

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