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5M0380R
5M0380R
SPS
The SPS product family is specially designed for an off-line SMPS TO220F-4L
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed frequency oscillator,
under voltage lock-out, leading edge blanking, optimized gate turn-
on/turn-off driver, thermal shutdown protection, over voltage protection,
and temperature compensated precision current sources for loop
compensation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can reduce
total component count, design size, weight and at the same time
increase efficiency, productivity, and system reliability.
1. GND 2. Drain 3. Vcc 4. FB
It has a basic platform well suited for cost-effective design in either a
flyback converter or a forward converter.
BLOCK DIAGRAM
KA5M0380R SPS
OSCILLATOR SECTION
Initial accuracy Fosc Ta=25°C 61 67 73 kHz
Frequency change with temperature(2) -25°C ≤ Ta ≤ +85°C - ±5 ±10 %
PWM SECTION
Maximum duty cycle Dmax - 74 77 80 %
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA
Shutdown delay current Idealy Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA
OVER CURRENT PROTECTION SECTION
Over current protection IL(max) Max. inductor current 1.89 2.15 2.41 A
UVLO SECTION
Start threshold voltage Vth(H) - 8.4 9 9.6 V
Minimum operating voltage Vth(L) After turn on 14 15 16 V
TOTAL STANDBY CURRENT SECTION
Start current IST Vcc = 14V - 0.1 0.17 mA
Operating supply current IOPR Vcc ≤ 28 - 7 12 mA
(control part only)
SHUTDOWN SECTION
Shutdown Feedback voltage VSD Vfb ≥ 6.5V 6.9 7.5 8.1 V
Thermal shutdown temperature(Tj)(1) TSD - 140 160 - °C
Over voltage protection voltage VOVP Vcc ≥ 24V 25 27 29 V
NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(wafer test) process
KA5M0380R SPS
101 101
VGS
Top : 15V
10V
8.0V
ID, Drain Current [A]
@Notes: @ Notes:
1. 300µ s Pulse Test 25oC -25oC 1. VDS = 30 V
2. TC = 25 oC 2. 300µ s Pulse Test
10-1 10-1
100 101 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]
Fig. 3 On-Resistance vs. Drain Current Fig. 4 Source-Drain Diode Forward Voltage
7 10
IDR, Reverse Drain Current [A]
Drain-Source On-Resistance
Vgs=10V
6
5
RDS(on), [§Ù ]
Vgs=20V
4
1
3
2 25 oC
150oC @ Notes:
1. VGS = 0V
1 2. 300µ s Pulse Test
@ Note : Tj=25¡É
0 0.1
0 1 2 3 4 0.4 0.6 0.8 1.0
ID,Drain Current VSD, Source-Drain Voltage [V]
Fig.5 Capacitance vs. Drain-Source Voltage Fig. 6 Gate Charge vs. Gate-Source Voltage
1000
800
Crss = Cgd VDS=400V
8
700
Capacitance [pF]
VDS=640V
600 Ciss
6
500
400
4
300
200 Coss 2
@ Note : ID=3.0A
100 Crss
0 0
100 101 0 5 10 15 20 25 30
VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC]
KA5M0380R SPS
2.0
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(on), (Normalized)
1.5
1.0
1.0
@ Notes : @ Notes:
0.9 1. VGS = 0V
0.5
1. VGS = 10V
2. ID = 250µ A 2. ID = 1.5 A
0.8 0.0
-50 0 50 100 150 -50 0 50 100 150
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Fig. 9 Max. Safe Operating Area Fig. 10 Max. Drain Current vs. Case Temperature
102 3.5
[A]
101 10 µ s
ID, Drain Current [A]
2.5
100 µ s
1 ms
2.0
10 ms
100 DC
1.5
@ Notes : 1.0
10-1
1. TC = 25 oC
2. TJ = 150 oC 0.5
3. Single Pulse
10-2 0.0
101 102 103 40 60 80 100 120 140
VDS , Drain-Source Voltage [V] TC, Case Temperature [oC]
100
D=0.5
@ Notes :
o
0.2 1. Zθ JC (t)=1.25 C/W Max.
2. Duty Factor, D=t1/t2
0.1
3. TJM-TC=PDM*Zθ JC (t)
10-1
Z (t) ,
0.05
0.02
θJC
10-2 -5
10 10-4 10-3 10-2 10-1 100 101
t1 , Square Wave Pulse Duration [sec]
KA5M0380R SPS
www.fairchildsemi.com