You are on page 1of 7

Home Search Collections Journals About Contact us My IOPscience

A simple hydrothermal method for the growth of Bi2Se3 nanorods

This content has been downloaded from IOPscience. Please scroll down to see the full text.

2006 Nanotechnology 17 1700

(http://iopscience.iop.org/0957-4484/17/6/026)

View the table of contents for this issue, or go to the journal homepage for more

Download details:

IP Address: 137.99.26.43
This content was downloaded on 04/01/2014 at 11:37

Please note that terms and conditions apply.


INSTITUTE OF PHYSICS PUBLISHING NANOTECHNOLOGY
Nanotechnology 17 (2006) 1700–1705 doi:10.1088/0957-4484/17/6/026

A simple hydrothermal method for the


growth of Bi2Se3 nanorods
Jyoti R Ota1 , Poulomi Roy1 , Suneel K Srivastava1 , R Popovitz-Biro2
and Reshef Tenne2
1
Inorganic Materials and Nanocomposite Laboratory, Department of Chemistry,
Indian Institute of Technology, Kharagpur-721302, India
2
Department of Materials and Interfaces, Weizmann Institute, Rehvot 76100, Israel

E-mail: sunit@chem.iitkgp.ernet.in

Received 9 January 2006


Published 27 February 2006
Online at stacks.iop.org/Nano/17/1700
Abstract
Bi2 Se3 nanorods have been synthesized through a simple hydrothermal
reduction approach. The nanorods formed were ≈10 nm in diameter and
100–200 nm in length. XRD characterization suggested that the product
consisted of the hexagonal phase of pure Bi2 Se3 . EDX and XPS studies
further confirmed the composition and purity of the product. A possible
mechanism for the reaction is proposed, where Bi2 Se3 microsheets are
presumed to be the intermediate for the formation of the nanorods. The effect
of solvent on the morphology of the final product is discussed, where, in the
presence of aprotic solvent DMF, nanoparticle formation is observed. A
bandgap of 2.25 eV is observed from the UV–visible absorption spectra.

1. Introduction dimensional nanostructures have been the subject of intense


research during the last few years, due to their unique
In the past few years, studies of materials with electrical, optical, and magnetic properties, and their potential
layered structures such as transition metal dichalcogenides application in devices [12]. In this regard, Bi2 Se3 , a low
(TMDCs) [1, 2], metal chalcogenides of AV VI
2 B3 [3], A2 X3 - bandgap semiconductor, has received thorough attention in the
M2 X3 -M X (A = Ga, In; M = trivalent metal; M = divalent

past few years. Moreover, Bi2 Se3 has a quasi-layered structure
metal; X = S, Se) [4, 5], clay minerals [6] etc have received with two Bi and three Se layers forming one unit cell, which
ever-increasing attention. Among all of these, work on metal are connected by weak van der Waal’s forces [13]. This unique
chalcogenides of AV VI
2 B3 has attracted much attention due feature makes it suitable to grow into different one-dimensional
to their wide application in thermoelectric, optoelectronic nanostructures such as nanorods, nanowires, nanotubes,
devices as well as in television cameras, IR spectroscopy etc [14]. However, no significant progress has been made in
etc [7, 8]. For a material to be useful for application in the synthesis of Bi2 Se3 nanomaterials. Wang et al [15] used
thermoelectric devices, the figure of merit ( Z = S 2 σ/κ ) a solvothermal approach to prepare nanocrystals of Bi2 Se3 ,
plays an important role, where the increase in Z is using ethylenediamine as a solvent and NaI as a reducing agent.
accompanied by a corresponding increase in the electrical Single-crystalline nanorods of Bi2 Se3 have been reported by
conductivity (σ ) and decrease in the thermal conductivity (κ ). means of a convenient solvothermal route using ethylene
It has been reported that the thermal conductivity decreases at glycol both as a solvent and a reducing agent [16]. Recently,
the nano-level, without deteriorating the electrical conductivity thermoelectric nanosheets and nanotubes of Bi2 Se3 have been
due to the lattice-phonon blocking effect [9]. An enhancement synthesized by a hydrothermal co-reduction method [13]. Zhu
in optical and electrical properties is also expected as a and coworkers prepared Bi2 Se3 nanocrystals with controllable
result of the quantum size effect. Some recent studies have morphology and nanospheres using a sonochemical [17] and
revealed that nanostructures, quantum wells and quantum a photochemical [18] synthetic method, respectively. The
wires can be better thermoelectric materials than their bulk formation of nanorods using alumina as the template was also
counterparts [10, 11]. Hence, the synthesis of nanomaterials reported [18]. In addition to this, the synthesis of bismuth
and their proper application has remained a challenge for chalcogenides in nanocrystalline form using various methods
developing better thermoelectric materials. In particular, one- such as solvothermal [19], conventional evaporation [20],

0957-4484/06/061700+06$30.00 © 2006 IOP Publishing Ltd Printed in the UK 1700


A simple hydrothermal method for the growth of Bi2 Se3 nanorods

surfactant template [21] and a sonochemical route [22] have

015
been reported. Among all of these, the solvothermal and
hydrothermal methods have been widely used due to their ease
of use and their one-step synthesis approach.
In the present paper, we report an easy hydrothermal
approach to obtain Bi2 Se3 nanorods using Se powder, bismuth

Intensity (arb.unit)

110
nitrate, triethanol amine (as a complexing agent), sodium
hydroxide and hydrazine hydrate as a reducing agent. The
effect of temperature and solvent on the morphology of the
final product is also discussed. The product obtained at a higher

101
temperature (150 ◦ C) mainly consists of nanorods, whereas

1010
for the same reaction at a lower temperature (110 ◦ C), some

006

205
116
104
microsheets are obtained as well as nanorods. The optical

1115
0210
1016
021
properties of the material are examined.

10 20 30 40 50 60 70
2. Experimental procedure 2θ, degrees

All of the reagents were of analytical grade and used without Figure 1. XRD pattern of the Bi2 Se3 nanorods synthesized at 150 ◦ C.
further purification. In a typical procedure, 7.5 mmol of
NaOH was dissolved in 20 ml of water in a 100 ml beaker,
and 3.7 mmol of Se powder was added to it under constant Bi–Se compounds are not observed in the diffraction pattern,
stirring, followed by 0.4 ml of hydrazine hydrate. The suggesting that the product is of high purity. The composition
stirring was continued for about 1.5 h, and 1.3 mmol of of the final product was further confirmed by energy dispersive
Bi2 (NO3 )3 ·5H2 O triturated in 5 ml of triethanol amine was x-ray analysis (EDX), in which the atomic ratio of bismuth
added to it, the stirring was continued for a further 15 min. (41%) to selenium (59%) was found to be approximately 2:3,
The resultant solution was transferred into a Teflon-lined confirming the product to be Bi2 Se3 .
autoclave of 55 ml capacity, and maintained at 150 ◦ C for XPS characterization of the sample was done to evaluate
about 24 h, followed by cooling to room temperature. The the composition and purity of the nanorods. The binding
product was then carefully collected and washed with water, energies obtained in the XPS analysis are standardized for
followed by ethanol repeatedly, then dried in vacuum at 60 ◦ C specimen charging using C1s as the reference at 284.6 eV. The
for 4 h. The same experiment was repeated using N , N - complete range scan is shown in figure 2(a), where only peaks
dimethyleformamide (DMF) and tetrahydro furan (THF) as the for Bi, Se, O and C are found. It should be mentioned that the
solvents in place of water. presence of trace amounts of C and O during the synthesis of
The phase analysis and structure of the material were nanorods is not uncommon, and that could be due to adsorbed
examined with a Philips PW-1710 x-ray diffractrometer CO2 , O2 or H2 O on the surface of the sample [16], confirming
(40 kV, 20 mA) (XRD) using Cu Kα radiation (λ = 1.5418 Å). further the formation of a high purity product in our case.
The morphology of the sample collected from the surface Figure 2(a) shows that there is an overlap of Bi 4f and Se 3p
was studied using a JEOL (JSM-5800) scanning electron peaks at around 160 eV; but compared to the Se 3p peak, Bi 4f
microscope with an accelerating voltage of 20 kV. An electron is of higher intensity. The high-resolution spectrum of the Bi
microprobe analyser (OXFORD ISIS-300 model) was used 4f presented in figure 2(b) shows that peaks appear at 156.0 eV
to determine the chemical composition of the sample. TEM (Bi 4f7/2 ) and 161.3 eV (Bi 4f5/2 ) with a splitting of 5.3 eV,
micrographs and electron diffraction (ED) were carried out on which is in agreement with the previous reports [8, 16]. In this
a Philips CM 120 (120 kV) transmission electron microscope. case, there is no change in spin–orbit splitting. However, a
High-resolution transmission electron microscopy (HRTEM) small chemical shift (0.6 eV) compared to the peak positions
was carried out on a Tecnai F30 (300 kV) (FEI). The in the case of elemental Bi is clearly visible [23]. Moreover,
x-ray photoelectron spectra (XPS) were collected on an this corresponds to around 2 eV shift for Bi 4f7/2 and Bi 4f5/2
ESCALab MKII x-ray photoelectron spectrometer, using non- peaks compared to that reported for Bi2 Se3 in the compound
monochromatized Mg Kα x-ray as the excitation source. form [16, 24]. The presence of a broad peak at 51.7 eV in
A Perkin–Elmer lambda 20 UV/VIS spectrophotometer was figure 2(c) corresponds to the Se 3d level. It can be noted that
used for the optical measurement of the sample, dispersed in the Se 3d peak also has a shift around a similar value as in
ethanol. the case of the peaks for Bi. All such shifting of the peaks is
also well matched to the report by Thuler et al [25]. Taking
3. Results and discussion into account the atomic sensitivity factor of each element, the
stoichiometry calculated from the peak area of the Bi 4f and Se
The phase analysis of the as-prepared sample was examined by 3d is in agreement with the formula Bi2 Se3 .
XRD, and is shown in figure 1. All of the peaks can be indexed The morphology of the product was examined using a
to the pure hexagonal phase of Bi2 Se3 , with cell parameters transmission electron microscope. A typical TEM image,
a = 4.134 Å and c = 28.542 Å (space group: R 3m ) and are shown in figure 3(a), reveals the nanorods with diameters
close to the reported values (JCPDS 33-0214; a = 4.1396 Å around 10 nm and lengths around 100–200 nm. The ED pattern
and c = 28.636 Å). Peaks corresponding to Bi, Se or other of the product is shown in the inset of this figure, revealing

1701
J R Ota et al

(a) of about 10–12 lattice fringes, and the interlayer separation


Bi 4f(Se 3p) estimated from the line profile is 0.474 nm. The above distance
80k corresponds to the (006) plane of Bi2 Se3 , so the preferential
growth along this plane is consistent with the growth of the
one-dimensional nanostructures along the (00) direction [12].
Figure 3(c) shows a TEM of a complete nanorod, where well-

Bi 4d3/2
Bi 4d5/2

Bi 4p3/2
60k defined fringes can be observed without any disarrangement
(dislocation). The FFT (fast Fourier transform) of this nanorod,

O 1s
Intensity (cps)

showing clear spots, is shown in the inset. The spots identified


refer to the 006 plane (0.474 nm), and are equal to the
C 1s

40k calculated average fringe width. Figure 3(d) shows a HRTEM


image from part of a nanorod with the 003 (0.96 nm) lattice
fringes, corresponding to one layer of Bi2 Se3 , marked.
We also carried out the reaction using DMF and THF as
Se 3d

20k the solvents. The SEM image of the product prepared using
Bi 5d

DMF as a solvent is shown in figure 4(a). It can be seen


that hexagonal particles in the size range of a few hundred
nanometres to one micrometre are the structures of these
0k
0 200 400 600 800 1000 products, and no nanorods are formed. The TEM image of this
Binding energy / eV sample, shown in figure 4(b) shows the presence of some clear
(b) hexagonal particles of around 100–300 nm. The ED of this
Bi 4f7/2
(156.0 eV)
Bi 4f5/2 nanoparticle in the inset of this figure has random spots that are
(161.3 eV) difficult to index, indicating the formation of a polycrystalline
product. It appears that the interaction of ions with the reaction
Intensity (arb. unit)

media controls the rate of crystal growth, which is responsible


for the formation of such particles. The hydrazine acts as a
reducing agent in our process, converting (reducing) elemental
selenium to HSe− , that in turn is converted to Se2− by OH−
provided by sodium hydroxide [26]. Thus, Bi3+ through the
controlled release from the TEA-Bi complex, reacts with Se2−
to give Bi2 Se3 . The slow reaction rate favours the formation of
one-dimensional nanstructures [27]. The aprotic nature of the
0 150 155 160 165 170 DMF could increase the activity of the ionic species, thereby
(c) Binding energy / eV increasing its reaction rate. Thus, the diffusion of the ions in
Se 3d DMF at 150 ◦ C is more rapid than in water, i.e. protic, and
(51.7 eV) can interact with the charged species effectively. Hence, the
reaction is completed in a shorter time in an aprotic solvent,
and the product is in a growing process for the rest of the
Intensity (arb. unit)

time (Ostwald ripening) [27]. As a result, the morphology of


the product changes from a rod-like shape to the hexagonal
particles of Bi2 Se3 , controlled by its crystal habit. However,
when water is used as the solvent, the slow reaction rate affects
the structure of the product resulting in nanorods. In this case,
the ionic activity is likely to decrease due to the protic (polar)
water and as result, the reaction rate remains slow giving rise
to preferential growth along one direction, thereby forming
nanorods. The morphological evolution of the Bi2 Se3 nanorods
reflects its inherent crystal structure. It crystallizes in structure
45 50 55 60 65 where hexagonal sheets of cation and anion are arranged in
Binding energy / eV a close-packed chain-like manner. In this typical structure,
Figure 2. XPS spectra of the Bi2 Se3 nanorods: (a) wide scan spectra; different layers are arranged vertically to each other extending
(b) high-resolution spectra of Bi 4f and (c) high-resolution spectra of along the c-axis. This anisotropy in the crystal structure makes
Se 3d. the material suitable for growth in a specific orientation to
give rod-like structures. However, formation of Bi2 Se3 is
significantly low when THF is used as a solvent under similar
clear diffraction spots that correspond to the hexagonal phase conditions.
of Bi2 Se3 . The nanorods formed are short, but nearly uniform When the same reaction was carried out in the presence of
in dimension. A TEM image of part of a nanorod is shown water at a lower temperature i.e. below 110 ◦ C, some particle
in figure 3(b), along with the line profile of the marked were found floating on the upper surface. EDX analysis of
region (inset). It is clearly evident that each nanorod consists these confirmed the Bi:Se atomic ratio to be 2:3, and the

1702
A simple hydrothermal method for the growth of Bi2 Se3 nanorods

a b

c d

Figure 3. TEM images of the Bi2 Se3 nanorods synthesized at 150 ◦ C: (a) low magnification TEM image and the corresponding SAED pattern
(inset); (b) high magnification TEM image of part of a nanorod showing a profile of the lattice fringes marked by a line (inset); (c) high
magnification TEM image of a complete nanorod and FFT (fast Fourier transform) of the region marked by a square (inset). (d) HRTEM
image of a part of a nanorod with the 003 (0.96 nm) lattice fringes marked.

SEM image is shown in figure 4(c). The platelet or sheet- where hν is the photon energy, B is a constant and n
like structure in the micron range can be seen clearly in the is the transition-dependent parameter, which is 1/2 or 3/2
micrograph. However, no such platelets were found floating for a direct bandgap material depending on whether the
on the surface when the reaction was carried out at a higher transition is allowed or forbidden, respectively. Bi2 Se3 , being
temperature (150 ◦ C). These observations clearly suggest that a semiconducting material with direct bandgap, n can be taken
the formation of nanorods takes place through the platelets, and
to equal 1/2. The plot of (αhν)2 with respect to hν is shown
the reaction is completed without leaving any of these platelets
in figure 5. Extrapolating the linear part of the curve on the
untransformed at a higher temperature.
The optical absorption spectrum was recorded in the range hν axis, the bandgap of the sample is found to be 2.25 eV. The
1100–300 nm at room temperature by dispersing the samples higher bandgap values of 2.3 eV [31] and 1.7 eV [32] have
in ethanol, and the value of the optical absorption coefficient been reported in the case of Bi2 Se3 thin films. Yang et al
(α ) is calculated by using the equation [16] have also reported a bandgap of 1.5 eV for nanorods of
around 100 nm in diameter, which they explained as being due
1
α = − ln A to the quantum confinement effect. However, the nanorods in
c
our case are of much lower dimensions (10 nm), so a higher
where c is the concentration expressed in terms of the amount bandgap is expected. Earlier studies by Bhosale et al [33]
of sample dispersed per 1 ml of ethanol (2.3 × 10−4 g cm−3 ) on Bi2 S3 also confirmed the effect of size on the bandgap.
and A is the absorbance. The value of α is found to be According to this, the bandgap of Bi2 S3 is 1.7 eV for a particle
of the order 104 cm−1 , supporting the presence of a direct
size 224 nm, and with a decrease in particle size (130 nm)
bandgap [28–30].
it increased to 2.0 eV. Therefore, the increase in bandgap in
The bandgap of the material has been calculated on the
basis of the optical spectra using the following equation: our case may be attributed to the quantum confinement effect,
although, the possibility of an additional contribution from the
(αhν) = B(hν − E g )n surface state cannot be ruled out [34–36].

1703
J R Ota et al

the optical study of the nanorods, the bandgap was found


a b
to be 2.25 eV; higher than that of the bulk sample. The
increase in the bandgap suggests that the nanorods could be
a better material for use in optoelectronic devices than the bulk
material.

200 nm Acknowledgments

c The authors would like to acknowledge the financial support


by MHRD and CSIR, India to carry out this work. RT is
the Director of the Helen and Martin Kimmel Center for
Nanoscale Science and the holder of the Drake Family Chair
for Nanotechnology.

References
[1] Levy F 1976 Structural Chemistry of Layer-Type Phases
Figure 4. (a) SEM image of the Bi2 Se3 nanoparticles prepared at (Dordrecht: Reidel)
150 ◦ C using DMF as the solvent, (b) TEM photograph of the [2] Tenne R, Salitra G, Margulis L and Tailanker M 1993 Nature
nanoparticles (inset: the corresponding SAED pattern), (c) SEM 365 113
image of the sample collected from the surface of the solution when Ota J R and Srivastava S K 2006 J. Nanosci. Nanotechnol.
the reaction was carried out at 110 ◦ C using water as a solvent. 6 168
[3] Rowe R M 1995 CRC Hand Book of Thermoelectrics
(Boca Raton, FL: CRC Press)
[4] Bala P, Samantaray B K, Srivastava S K and
Haueseler H Z 2000 Kristallography 215 235
2.8 [5] Srivastava S K, Pramanik M, Palit D and Haueseler H 2004
Chem. Mater. 16 4168
(αhν)2x 108 / (eV/cm)2

[6] Briendley G W and Brown G 1980 Order–Disorder in Clay


Minerals, in Crystal Structure of Clay Minerals and Their
2.4 X-ray Identification (London: Mineralogical Society)
[7] Tritt T M 1999 Science 283 804
Venkantasubramanian R, Siilvola E, Colpitts T and
O’Quinn B 2001 Nature 413 597
2.0
[8] Arivuoli D, Gnanam F D and Ramasamy P 1988 J. Mater. Sci.
Lett. 7 711
[9] Zhao X B, Ji X H, Zhang Y H, Zhu T J, Tu J P and
1.6 Zhang X B 2005 Appl. Phys. Lett. 86 62111
[10] Sander M S, Prieto A L, Kou H Z, Sands T and
Stacy A M 2002 Adv. Mater. 14 665
[11] Sales B C 2002 Science 295 1248
0 1 2 3 4 5
[12] Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y,
hν / eV
Kim F and Yan H 2003 Adv. Mater. 15 353
[13] Cui H, Liu H, Li X, Wang J, Han F, Zhang X and
Figure 5. Plot of (αhν)2 versus hν for the Bi2 Se3 nanorods. Boughton R I 2004 J. Solid State Chem. 177 4001
[14] Koh Y W, Lai C S, Du A Y, Tiekink E R T and Loh K P 2003
Chem. Mater. 15 4544
[15] Wang W, Geng Y, Qian Y, Xi Y and Liu X 1999 Mater. Res.
4. Conclusions Bull. 34 131
[16] Yang X, Wang X and Zhang Z 2005 J. Cryst. Growth 276 566
Bi2 Se3 is a typical thermoelectric material with excellent [17] Qiu X F, Zhu J J, Pu L, Shi Y, Zheng Y D and Chen H Y 2004
thermoelectric properties. We have been able to synthesize Inorg. Chem. Commun. 7 319
nanorods of Bi2 Se3 through the hydrothermal method to [18] Xu S, Zhao W B, Hong J M, Zhu J J and Chen H Y 2005 Mater.
Lett. 59 319
be potentially useful for the preparation of thermo-electric [19] Deng Y, Nan C W and Guo L 2004 Chem. Phys. Lett. 383 572
nanostructures or quantum devices by chemical self-assembly. [20] Ye C, Meng G, Jiang Z, Wang Y, Wang G and Zhang L 2002
XRD studies confirmed the formation of hexagonal Bi2 Se3 J. Am. Chem. Soc. 124 15180
with lattice parameters a = 4.134 Å and b = 28.542 Å. [21] Ota J R and Srivastava S K 2005 Nanotechnology 16 2415
[22] Wang H, Zhu J J, Zhu J M and Chen H Y 2002 J. Phys. Chem.
The results of ED and TEM analysis also supported the lattice
B 106 3848
constants calculated from XRD. The effect of solvents on the [23] Nascimento V B, de Carvalho V E, Paniago R, Sores E A,
final morphology of the sample and a possible mechanism for Ladeira L O and Pfannes H D 1999 J. Electron Spectrosc.
the formation of the reaction product are discussed. Micro- Relat. Phenom. 104 99
platelets of Bi2 Se3 appear to be a possible intermediate during [24] Shen G, Chen D, Tang K and Qian Y 2004 Nanotechnology
15 1530
the formation of the nanorods. The purity and composition [25] Thuler M R, Benbow R L and Hurych Z 1982 Chem. Phys.
of the sample is confirmed by both EDX and XPS. From 71 265

1704
A simple hydrothermal method for the growth of Bi2 Se3 nanorods

[26] Pejova B, Grozdanov I and Tanusevski A 2004 Mater. Chem. [32] Garcia V M, Nair M T S, Nair P K and Zingaro R A 1997
Phys. 83 245 Semicond. Sci. Technol. 12 645
[27] Yang J, Cheng G H, Cheng J H, Yu S H, Liu X M and [33] Godakh S R and Bhoale C H 2000 Mater. Chem. Phys. 64 5
Qian Y T 2001 Chem. Mater. 13 848 [34] Gorer S and Hodes G 1994 J. Phys. Chem. 98 5338
[28] Nayak B B, Acharya H N, Choudhari T K and Mitra G B 1982 [35] Lu X, Hanrath T, Johnston K P and Korgel B A 2003 Nano
Thin Solid Films 92 309 Lett. 3 93
[29] Desai J D and Lokhande C D 1995 Mater. Chem. Phys. 41 98 Holmes J D, Johnston K P, Dotty R C and Korgel B A 2000
[30] Deshmukh L P, Holikatti S G, Rane B P, Belle M I and Science 287 1471
Hankare P P 1993 Bull. Electrochem. 9 237 [36] Wolkin M V, Jorne J P M, Allan G and Delerue C 1999 Phys.
[31] Pejova B and Grozdanov I 2002 Thin Solid Films 408 6 Rev. Lett. 82 197

1705

You might also like