Professional Documents
Culture Documents
This content has been downloaded from IOPscience. Please scroll down to see the full text.
(http://iopscience.iop.org/0957-4484/17/6/026)
View the table of contents for this issue, or go to the journal homepage for more
Download details:
IP Address: 137.99.26.43
This content was downloaded on 04/01/2014 at 11:37
E-mail: sunit@chem.iitkgp.ernet.in
015
been reported. Among all of these, the solvothermal and
hydrothermal methods have been widely used due to their ease
of use and their one-step synthesis approach.
In the present paper, we report an easy hydrothermal
approach to obtain Bi2 Se3 nanorods using Se powder, bismuth
Intensity (arb.unit)
110
nitrate, triethanol amine (as a complexing agent), sodium
hydroxide and hydrazine hydrate as a reducing agent. The
effect of temperature and solvent on the morphology of the
final product is also discussed. The product obtained at a higher
101
temperature (150 ◦ C) mainly consists of nanorods, whereas
1010
for the same reaction at a lower temperature (110 ◦ C), some
006
205
116
104
microsheets are obtained as well as nanorods. The optical
1115
0210
1016
021
properties of the material are examined.
10 20 30 40 50 60 70
2. Experimental procedure 2θ, degrees
All of the reagents were of analytical grade and used without Figure 1. XRD pattern of the Bi2 Se3 nanorods synthesized at 150 ◦ C.
further purification. In a typical procedure, 7.5 mmol of
NaOH was dissolved in 20 ml of water in a 100 ml beaker,
and 3.7 mmol of Se powder was added to it under constant Bi–Se compounds are not observed in the diffraction pattern,
stirring, followed by 0.4 ml of hydrazine hydrate. The suggesting that the product is of high purity. The composition
stirring was continued for about 1.5 h, and 1.3 mmol of of the final product was further confirmed by energy dispersive
Bi2 (NO3 )3 ·5H2 O triturated in 5 ml of triethanol amine was x-ray analysis (EDX), in which the atomic ratio of bismuth
added to it, the stirring was continued for a further 15 min. (41%) to selenium (59%) was found to be approximately 2:3,
The resultant solution was transferred into a Teflon-lined confirming the product to be Bi2 Se3 .
autoclave of 55 ml capacity, and maintained at 150 ◦ C for XPS characterization of the sample was done to evaluate
about 24 h, followed by cooling to room temperature. The the composition and purity of the nanorods. The binding
product was then carefully collected and washed with water, energies obtained in the XPS analysis are standardized for
followed by ethanol repeatedly, then dried in vacuum at 60 ◦ C specimen charging using C1s as the reference at 284.6 eV. The
for 4 h. The same experiment was repeated using N , N - complete range scan is shown in figure 2(a), where only peaks
dimethyleformamide (DMF) and tetrahydro furan (THF) as the for Bi, Se, O and C are found. It should be mentioned that the
solvents in place of water. presence of trace amounts of C and O during the synthesis of
The phase analysis and structure of the material were nanorods is not uncommon, and that could be due to adsorbed
examined with a Philips PW-1710 x-ray diffractrometer CO2 , O2 or H2 O on the surface of the sample [16], confirming
(40 kV, 20 mA) (XRD) using Cu Kα radiation (λ = 1.5418 Å). further the formation of a high purity product in our case.
The morphology of the sample collected from the surface Figure 2(a) shows that there is an overlap of Bi 4f and Se 3p
was studied using a JEOL (JSM-5800) scanning electron peaks at around 160 eV; but compared to the Se 3p peak, Bi 4f
microscope with an accelerating voltage of 20 kV. An electron is of higher intensity. The high-resolution spectrum of the Bi
microprobe analyser (OXFORD ISIS-300 model) was used 4f presented in figure 2(b) shows that peaks appear at 156.0 eV
to determine the chemical composition of the sample. TEM (Bi 4f7/2 ) and 161.3 eV (Bi 4f5/2 ) with a splitting of 5.3 eV,
micrographs and electron diffraction (ED) were carried out on which is in agreement with the previous reports [8, 16]. In this
a Philips CM 120 (120 kV) transmission electron microscope. case, there is no change in spin–orbit splitting. However, a
High-resolution transmission electron microscopy (HRTEM) small chemical shift (0.6 eV) compared to the peak positions
was carried out on a Tecnai F30 (300 kV) (FEI). The in the case of elemental Bi is clearly visible [23]. Moreover,
x-ray photoelectron spectra (XPS) were collected on an this corresponds to around 2 eV shift for Bi 4f7/2 and Bi 4f5/2
ESCALab MKII x-ray photoelectron spectrometer, using non- peaks compared to that reported for Bi2 Se3 in the compound
monochromatized Mg Kα x-ray as the excitation source. form [16, 24]. The presence of a broad peak at 51.7 eV in
A Perkin–Elmer lambda 20 UV/VIS spectrophotometer was figure 2(c) corresponds to the Se 3d level. It can be noted that
used for the optical measurement of the sample, dispersed in the Se 3d peak also has a shift around a similar value as in
ethanol. the case of the peaks for Bi. All such shifting of the peaks is
also well matched to the report by Thuler et al [25]. Taking
3. Results and discussion into account the atomic sensitivity factor of each element, the
stoichiometry calculated from the peak area of the Bi 4f and Se
The phase analysis of the as-prepared sample was examined by 3d is in agreement with the formula Bi2 Se3 .
XRD, and is shown in figure 1. All of the peaks can be indexed The morphology of the product was examined using a
to the pure hexagonal phase of Bi2 Se3 , with cell parameters transmission electron microscope. A typical TEM image,
a = 4.134 Å and c = 28.542 Å (space group: R 3m ) and are shown in figure 3(a), reveals the nanorods with diameters
close to the reported values (JCPDS 33-0214; a = 4.1396 Å around 10 nm and lengths around 100–200 nm. The ED pattern
and c = 28.636 Å). Peaks corresponding to Bi, Se or other of the product is shown in the inset of this figure, revealing
1701
J R Ota et al
Bi 4d3/2
Bi 4d5/2
Bi 4p3/2
60k defined fringes can be observed without any disarrangement
(dislocation). The FFT (fast Fourier transform) of this nanorod,
O 1s
Intensity (cps)
20k the solvents. The SEM image of the product prepared using
Bi 5d
1702
A simple hydrothermal method for the growth of Bi2 Se3 nanorods
a b
c d
Figure 3. TEM images of the Bi2 Se3 nanorods synthesized at 150 ◦ C: (a) low magnification TEM image and the corresponding SAED pattern
(inset); (b) high magnification TEM image of part of a nanorod showing a profile of the lattice fringes marked by a line (inset); (c) high
magnification TEM image of a complete nanorod and FFT (fast Fourier transform) of the region marked by a square (inset). (d) HRTEM
image of a part of a nanorod with the 003 (0.96 nm) lattice fringes marked.
SEM image is shown in figure 4(c). The platelet or sheet- where hν is the photon energy, B is a constant and n
like structure in the micron range can be seen clearly in the is the transition-dependent parameter, which is 1/2 or 3/2
micrograph. However, no such platelets were found floating for a direct bandgap material depending on whether the
on the surface when the reaction was carried out at a higher transition is allowed or forbidden, respectively. Bi2 Se3 , being
temperature (150 ◦ C). These observations clearly suggest that a semiconducting material with direct bandgap, n can be taken
the formation of nanorods takes place through the platelets, and
to equal 1/2. The plot of (αhν)2 with respect to hν is shown
the reaction is completed without leaving any of these platelets
in figure 5. Extrapolating the linear part of the curve on the
untransformed at a higher temperature.
The optical absorption spectrum was recorded in the range hν axis, the bandgap of the sample is found to be 2.25 eV. The
1100–300 nm at room temperature by dispersing the samples higher bandgap values of 2.3 eV [31] and 1.7 eV [32] have
in ethanol, and the value of the optical absorption coefficient been reported in the case of Bi2 Se3 thin films. Yang et al
(α ) is calculated by using the equation [16] have also reported a bandgap of 1.5 eV for nanorods of
around 100 nm in diameter, which they explained as being due
1
α = − ln A to the quantum confinement effect. However, the nanorods in
c
our case are of much lower dimensions (10 nm), so a higher
where c is the concentration expressed in terms of the amount bandgap is expected. Earlier studies by Bhosale et al [33]
of sample dispersed per 1 ml of ethanol (2.3 × 10−4 g cm−3 ) on Bi2 S3 also confirmed the effect of size on the bandgap.
and A is the absorbance. The value of α is found to be According to this, the bandgap of Bi2 S3 is 1.7 eV for a particle
of the order 104 cm−1 , supporting the presence of a direct
size 224 nm, and with a decrease in particle size (130 nm)
bandgap [28–30].
it increased to 2.0 eV. Therefore, the increase in bandgap in
The bandgap of the material has been calculated on the
basis of the optical spectra using the following equation: our case may be attributed to the quantum confinement effect,
although, the possibility of an additional contribution from the
(αhν) = B(hν − E g )n surface state cannot be ruled out [34–36].
1703
J R Ota et al
200 nm Acknowledgments
References
[1] Levy F 1976 Structural Chemistry of Layer-Type Phases
Figure 4. (a) SEM image of the Bi2 Se3 nanoparticles prepared at (Dordrecht: Reidel)
150 ◦ C using DMF as the solvent, (b) TEM photograph of the [2] Tenne R, Salitra G, Margulis L and Tailanker M 1993 Nature
nanoparticles (inset: the corresponding SAED pattern), (c) SEM 365 113
image of the sample collected from the surface of the solution when Ota J R and Srivastava S K 2006 J. Nanosci. Nanotechnol.
the reaction was carried out at 110 ◦ C using water as a solvent. 6 168
[3] Rowe R M 1995 CRC Hand Book of Thermoelectrics
(Boca Raton, FL: CRC Press)
[4] Bala P, Samantaray B K, Srivastava S K and
Haueseler H Z 2000 Kristallography 215 235
2.8 [5] Srivastava S K, Pramanik M, Palit D and Haueseler H 2004
Chem. Mater. 16 4168
(αhν)2x 108 / (eV/cm)2
1704
A simple hydrothermal method for the growth of Bi2 Se3 nanorods
[26] Pejova B, Grozdanov I and Tanusevski A 2004 Mater. Chem. [32] Garcia V M, Nair M T S, Nair P K and Zingaro R A 1997
Phys. 83 245 Semicond. Sci. Technol. 12 645
[27] Yang J, Cheng G H, Cheng J H, Yu S H, Liu X M and [33] Godakh S R and Bhoale C H 2000 Mater. Chem. Phys. 64 5
Qian Y T 2001 Chem. Mater. 13 848 [34] Gorer S and Hodes G 1994 J. Phys. Chem. 98 5338
[28] Nayak B B, Acharya H N, Choudhari T K and Mitra G B 1982 [35] Lu X, Hanrath T, Johnston K P and Korgel B A 2003 Nano
Thin Solid Films 92 309 Lett. 3 93
[29] Desai J D and Lokhande C D 1995 Mater. Chem. Phys. 41 98 Holmes J D, Johnston K P, Dotty R C and Korgel B A 2000
[30] Deshmukh L P, Holikatti S G, Rane B P, Belle M I and Science 287 1471
Hankare P P 1993 Bull. Electrochem. 9 237 [36] Wolkin M V, Jorne J P M, Allan G and Delerue C 1999 Phys.
[31] Pejova B and Grozdanov I 2002 Thin Solid Films 408 6 Rev. Lett. 82 197
1705