Transistors with built-in Resistor

UNR921xJ Series (UN921xJ Series)

Silicon NPN epitaxial planar type
Unit: mm
For digital circuits

0.80±0.05
1.60+0.05
–0.03
0.12+0.03
–0.01
1.00±0.05

■ Features 3

1.60±0.05
0.85+0.05
–0.03

(0.375)
• Costs can be reduced through downsizing of the equipment and

5˚
reduction of the number of parts. 1 2
• SS-Mini type package, allowing automatic insertion through tape

(0.80)
0.27±0.02
packing. (0.50)(0.50)

0 to 0.02
■ Resistance by Part Number

0.70+0.05
–0.03
5˚
Marking Symbol (R1) (R2)
• UNR9210J (UN9210J) 8L 47 kΩ 
• UNR9211J (UN9211J) 8A 10 kΩ 10 kΩ

0.10 max.
• UNR9212J (UN9212J) 8B 22 kΩ 22 kΩ 1: Base
• UNR9213J (UN9213J) 8C 47 kΩ 47 kΩ 2: Emitter
3: Collector
• UNR9214J (UN9214J) 8D 10 kΩ 47 kΩ
EIAJ: SC-89 SSMini3-F1 Package
• UNR9215J (UN9215J) 8E 10 kΩ 
• UNR9216J (UN9216J) 8F 4.7 kΩ  Internal Connection
• UNR9217J (UN9217J) 8H 22 kΩ 
• UNR9218J (UN9218J) 8I 0.51 kΩ 5.1 kΩ R1
C
• UNR9219J (UN9219J) 8K 1 kΩ 10 kΩ B
• UNR921AJ 8X 100 kΩ 100 kΩ R2
• UNR921BJ 8Y 100 kΩ  E
• UNR921CJ 8Z  47 kΩ
• UNR921DJ (UN921DJ) 8M 47 kΩ 10 kΩ
• UNR921EJ (UN921EJ) 8N 47 kΩ 22 kΩ
• UNR921FJ (UN921FJ) 8O 4.7 kΩ 10 kΩ
• UNR921KJ (UN921KJ) 8P 10 kΩ 4.7 kΩ
• UNR921LJ (UN921LJ) 8Q 4.7 kΩ 4.7 kΩ
• UNR921MJ EL 2.2 kΩ 47 kΩ
• UNR921NJ EX 4.7 kΩ 47 kΩ
• UNR921TJ (UN921TJ) EZ 22 kΩ 47 kΩ
• UNR921VJ FD 2.2 kΩ 2.2 kΩ

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Collector current IC 100 mA
Total power dissipation PT 125 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2004 SJH00039BED 1

UNR921xJ Series Transistors with built-in Resistor

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cut-off current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA
Collector-emitter cut-off current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA
Emitter- UNR9210J/9215J/ IEBO VEB = 6 V, IC = 0 0.01 mA
base 9216J/9217J/921BJ
cut-off UNR9213J/921AJ 0.1
current UNR9212J/9214J/921DJ/ 0.2
(Collector 921EJ/921MJ/921NJ/921TJ
open) UNR9211J 0.5
UNR921FJ/921KJ 1.0
UNR9219J 1.5
UNR9218J/921CJ/921LJ/921VJ 2.0
Forward UNR921VJ hFE VCE = 10 V, IC = 5 mA 6 20 
current UNR9218J/921KJ/921LJ 20
transfer UNR9219J/921DJ/921FJ 30
ratio UNR9211J 35
UNR9212J/921EJ 60
UNR9213J/9214J/921AJ/ 80
921CJ/921MJ
UNR921NJ/921TJ 80 400
UNR9210J/9215J/9216J/ 160 460
9217J/921BJ
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V
Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V
Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V
UNR9213J/921BJ/921KJ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
UNR921DJ VCC = 5 V, VB = 10 V, RL = 1 kΩ
UNR921EJ VCC = 5 V, VB = 6 V, RL = 1 kΩ
UNR921AJ VCC = 5 V, VB = 5 V, RL = 1 kΩ
Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz
Input UNR9218J R1 −30% 0.51 +30% kΩ
resistance UNR9219J 1
UNR921MJ/921VJ 2.2
UNR9216J/921FJ/921LJ/921NJ 4.7
UNR9211J/9214J/9215J/921KJ 10
UNR9212J/9217J/921TJ 22
UNR9210J/9213J/921DJ/921EJ 47
UNR921AJ/921BJ 100

2 SJH00039BED
Transistors with built-in Resistor UNR921xJ Series

■ Electrical Characteristics (continued) Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Emitter-base resistance UNR921CJ R2 −30% 47 +30% kΩ
Rasistance UNR921MJ R1/R2 0.047 
ratio UNR921NJ 0.1
UNR9218J/9219J 0.08 0.10 0.12
UNR9214J 0.17 0.21 0.25
UNR921TJ 0.47
UNR921FJ 0.37 0.47 0.57
UNR921AJ/921VJ 1.0
UNR9211J/9212J/9213J/921LJ 0.8 1.0 1.2
UNR921KJ 1.70 2.13 2.60
UNR921EJ 1.70 2.14 2.60
UNR921DJ 3.7 4.7 5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

PT  Ta
150

125
Total power dissipation PT (mW)

100

75

50

25

0
0 40 80 120 160
Ambient temperature Ta (°C)

Characteristics charts of UNR9210J

IC  VCE VCE(sat)  IC hFE  IC
60 102 400
IB = 1.0 mA Ta = 25°C IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

0.9 mA VCE = 10 V
0.8 mA
50
Forward current transfer ratio hFE
Collector current IC (mA)

10 300
40 Ta = 75°C

0.4 mA 25°C
0.5 mA
30 0.3 mA 0.6 mA 1 200
0.7 mA
Ta = 75°C
0.1 mA −25°C
20
25°C
10 −1 100
10
−25°C

0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 3
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10

Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

2
10 10 −1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR9211J

IC  VCE VCE(sat)  IC hFE  IC
160 102 400
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

IB = 1.0 mA Ta = 25°C VCE = 10 V

0.9 mA
0.8 mA

Forward current transfer ratio hFE

0.7 mA
Collector current IC (mA)

120 0.6 mA 10 300

0.5 mA Ta = 75°C

0.4 mA

0.3 mA
80 1 200

25°C 25°C
0.2 mA Ta = 75°C
−25°C
40 10 −1 100
−25˚C

0.1 mA

0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

3 102 1

2
10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

4 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR9212J

IC  VCE VCE(sat)  IC hFE  IC
160 102 400
IC / IB = 10

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V

IB = 1.0 mA

Forward current transfer ratio hFE

0.9 mA 0.7 mA
Collector current IC (mA)

120 0.8 mA 0.6 mA 10 300

Ta = 75°C
0.5 mA
0.4 mA

80 1 200
0.3 mA 25°C
25°C Ta = 75°C
0.2 mA −25°C
40 10 −1 100
−25°C

0.1 mA

0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR9213J

IC  VCE VCE(sat)  IC hFE  IC
160 102 400
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V
IB = 1.0 mA
0.9 mA
Forward current transfer ratio hFE

0.8 mA
0.7 mA Ta = 75°C
Collector current IC (mA)

120 10 300
0.6 mA

0.5 mA 25°C

0.4 mA −25°C
80 1 200
0.3 mA

25°C Ta = 75°C
0.2 mA
40 10 −1 100

0.1 mA −25°C

0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 5
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10

Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR9214J

IC  VCE VCE(sat)  IC hFE  IC
160 102 400
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V

IB = 1.0 mA

Forward current transfer ratio hFE

0.9 mA
Collector current IC (mA)

120 0.8 mA 10 300

0.7 mA
0.6 mA
0.5 mA Ta = 75°C

80 0.4 mA 1 200
25°C
0.3 mA
Ta = 75°C −25°C
25°C
40 0.2 mA 10 −2 100

0.1 mA −25°C

0 10 −1 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

6 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR9215J

IC  VCE VCE(sat)  IC hFE  IC
160 102 400
IC / IB = 10

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V
IB = 1.0 mA
0.9 mA

Forward current transfer ratio hFE

0.8 mA
Collector current IC (mA)

120 0.7 mA 10 300

0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
80 1 200
25°C
0.3 mA

Ta = 75°C −25°C
0.2 mA 25°C
40 10 −1 100
0.1 mA
−25°C

0 −2 0
10
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR9216J

IC  VCE VCE(sat)  IC hFE  IC
160 102 400
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V

IB = 1.0 mA Ta = 75°C
Forward current transfer ratio hFE

0.9 mA
Collector current IC (mA)

120 0.8 mA 10 300

0.7 mA 25°C
0.6 mA
0.5 mA
−25°C
80 0.4 mA 1 200

0.3 mA
Ta = 75°C
0.2 mA 25°C
40 10 −1 100

0.1 mA
−25°C
0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 7
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10

Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR9217J

IC  VCE VCE(sat)  IC hFE  IC
120 102 400
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

T = 25°C
IB =1 .0 mA a
VCE = 10 V
0.9 mA
100 0.8 mA

Forward current transfer ratio hFE

0.7 mA
0.6 mA
Collector current IC (mA)

0.5 mA 10 300
80

0.4 mA
60 1 200
0.3 mA Ta = 75°C
Ta = 75°C
0.2 mA
25°C
40
25°C
10 −1 −25°C
100
20 0.1 mA
−25°C
0
10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 − −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

8 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR9218J

IC  VCE VCE(sat)  IC hFE  IC
240 102 160
IC / IB = 10

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V

200

Forward current transfer ratio hFE

Collector current IC (mA)

IB = 1.0 mA 10 120
0.9 mA
160 0.8 mA
0.7 mA
Ta = 75°C
120 1 80
Ta = 75°C
0.6 mA 25°C
80 0.5 mA
−25°C
0.4 mA 10 −1 25°C 40
0.3 mA
40
0.2 mA
0.1 mA −25°C
0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz
(Common base, input open circuited) Cob (pF)

VO = 5 V VO = 0.2 V
IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR9219J

IC  VCE VCE(sat)  IC hFE  IC
240 102 160
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C IC / IB = 10 VCE = 10 V

200
Forward current transfer ratio hFE

IB = 1.0 mA
Collector current IC (mA)

10 120
0.9 mA
160 0.8 mA
0.7 mA
0.6 mA
Ta = 75°C
120 1 80
25°C
Ta = 75°C −25°C
0.5 mA
80
0.4 mA
25°C
0.3 mA 10 −1 40
40 0.2 mA
0.1 mA −25°C
0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 9
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz
(Common base, input open circuited) Cob (pF)

VO = 5 V VO = 0.2 V
IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10

Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

2
10 10 −1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR921AJ

IC  VCE VCE(sat)  IC hFE  IC
1
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C IC / IB = 10 VCE = 10 V Ta = 75°C

IB = 0.5 mA 400
120

Forward current transfer ratio hFE

Collector current IC (mA)

0.4 mA
25°C
300
0.3 mA
−25°C
80
10 −1
0.2 mA 200

25°C Ta = 75°C
40
100
0.1 mA −25°C

0 10 −2 0
0 2 4 6 8 10 10 −1 1 10 102 10 −1 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

10 10 102
VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

f = 1 MHz Ta = 25°C Ta = 25°C

Ta = 25°C
Collector output capacitance

Output current IO (mA)

Input voltage VIN (V)

10

10 −1

1 10 −2 1
0 10 20 0 1 2 3 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

10 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR921BJ

IC  VCE VCE(sat)  IC hFE  IC
120 10

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C IC / IB = 10 VCE = 10 V
IB = 0.5 mA 400
Ta = 75°C

Forward current transfer ratio hFE

100
Collector current IC (mA)

0.4 mA 25°C
80 1 300
0.3 mA
−25°C

60
0.2 mA 200

40 10 −1
25°C Ta = 75°C
0.1 mA 100
20
−25°C

0 10 −2 0
0 2 4 6 8 10 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

10 102
10
(Common base, input open circuited) Cob (pF)

f = 1 MHz VO = 5 V VO = 0.2 V
Ta = 25°C Ta = 25°C Ta = 25°C
Collector output capacitance

Output current IO (mA)

Input voltage VIN (V)

10

1 10 −1 10 −1
0 10 20 30 40 10 −1 1 10 102
0.4 0.8 1.2 1.6
Collector-base voltage VCB (V) Output current IO (mA)
Input voltage VIN (V)

Characteristics charts of UNR921CJ

IC  VCE VCE(sat)  IC hFE  IC
1
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C IC / IB = 10
VCE = 10 V
IB = 1.0 mA
0.9 mA 300
120
Forward current transfer ratio hFE

0.8 mA Ta = 75°C
0.7 mA
Collector current IC (mA)

0.6 mA
0.5 mA 25°C
0.4 mA
80 200
0.3 mA −25°C
10 −1 Ta = 75°C

0.2 mA 25°C

40 100
−25°C
0.1 mA

0 10 −2 0
0 2 4 6 8 10 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

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 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

102 102 10
VO = 0.2 V
(Common base, input open circuited) Cob (pF)

f = 1 MHz VO = 5 V
Ta = 25°C Ta = 25°C
Ta = 25°C
Collector output capacitance

Output current IO (mA)

Input voltage VIN (V)

10

10 1

1 10 −1 10 −1
0 10 20 30 40 0 0.4 0.8 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR921DJ

IC  VCE VCE(sat)  IC hFE  IC
30 102 160
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V Ta = 75°C

0.9 mA
0.8 mA 0.5 mA
25°C

Forward current transfer ratio hFE

25 0.7 mA 0.4 mA
0.6 mA 0.3 mA −25°C
Collector current IC (mA)

IB = 1.0 mA 10 120

20

15 1 80
0.2 mA

10 0.1 mA Ta = 75°C
25°C
10 −1 40

5
−25°C

0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz
(Common base, input open circuited) Cob (pF)

VO = 5 V VO = 0.2 V
IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

10
103
Output current IO (µA)

Input voltage VIN (V)

3 1
102

2
10 −1
10
1

0 10 −2
1
10 −1 1 10 102 1.5 2.0 2.5 3.0 3.5 4.0 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

12 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR921EJ

IC  VCE VCE(sat)  IC hFE  IC
60 IB = 1.0 mA 0.7 mA 102 160
Ta = 25°C IC / IB = 10

Collector-emitter saturation voltage VCE(sat) (V)

0.9 mA 0.6 mA VCE = 10 V
0.8 mA
50

Forward current transfer ratio hFE

Ta = 75°C
Collector current IC (mA)

10 120
40 25°C

0.3 mA 0.2 mA −25°C

30 0.4 mA
0.5 mA 1 80
0.1 mA Ta = 75°C

20
25°C 40
10 −1
10

−25°C
0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 1.5 2.0 2.5 3.0 3.5 4.0 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR921FJ

IC  VCE VCE(sat)  IC hFE  IC
240 102 160
Ta = 25°C IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 10 V

200
Forward current transfer ratio hFE
Collector current IC (mA)

0.9 mA 10 120
0.8 mA
160 0.7 mA
0.6 mA
Ta = 75°C
120 Ta = 75°C 80
IB = 1.0 mA 1 25°C
−25°C
0.5 mA
80
0.4 mA 25°C
10 −1 40
0.3 mA
40
0.2 mA
0.1 mA −25°C
0 10 −2 0
0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 13
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10

Output current IO (µA)

Input voltage VIN (V)

4

3 102 1

2
10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR921KJ

IC  VCE VCE(sat)  IC hFE  IC
240 102 240
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C IC / IB = 10 VCE = 10 V

200

Forward current transfer ratio hFE

200
10
Collector current IC (mA)

160 160

Ta = 75°C
IB = 1.2 mA 1
120 120
1.0 mA 25°C
0.8 mA
80 Ta = 75°C 80
0.6 mA 25°C −25°C
10 −1
0.4 mA −25°C 40
40
0.2 mA

0 10 −2 0
0 2 4 6 8 10 12 1 10 102 103 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB VIN  IO

6 102
f = 1 MHz
(Common base, input open circuited) Cob (pF)

VO = 0.2 V
IE = 0 Ta = 25°C
Ta = 25°C
5
Collector output capacitance

10
Input voltage VIN (V)

3 1

2
10 −1
1

0 10 −2
1 10 102 10 −1 1 10 102
Collector-base voltage VCB (V) Output current IO (mA)

14 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR921LJ

IC  VCE VCE(sat)  IC hFE  IC
240 102 240

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C IC / IB = 10 VCE = 10 V

200

Forward current transfer ratio hFE

200
Collector current IC (mA)

10
Ta = 75°C
160 160
IB = 1.0 mA
0.8 mA 25°C
120 1 120
0.6 mA
−25°C
80 Ta = 75°C 80
0.4 mA
25°C
10 −1
40 40
−25°C
0.2 mA

0 10 −2 0
0 2 4 6 8 10 12 1 10 102 103 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB VIN  IO

6 102
f = 1 MHz
(Common base, input open circuited) Cob (pF)

VO = 0.2 V
IE = 0 Ta = 25°C
Ta = 25°C
5
Collector output capacitance

10
Input voltage VIN (V)

3 1

2
10 −1
1

0 10 −2
1 10 102 10 −1 1 10 102
Collector-base voltage VCB (V) Output current IO (mA)

Characteristics charts of UNR921MJ

IC  VCE VCE(sat)  IC hFE  IC
240 10 500
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C VCE = 10 V

200 IB = 1.0 mA
Forward current transfer ratio hFE

0.9 mA 400
0.8 mA
Collector current IC (mA)

1
0.7 mA
160 0.6 mA
300
Ta = 75°C Ta = 75°C
25°C
120 0.5 mA 10 −1
0.4 mA 25°C
0.3 mA 200
80 −25˚C −25°C
0.2 mA
10 −2
100
40 0.1 mA

0 10 −3 0
0 2 4 6 8 10 12 1 10 102 103 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 15
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

5 104 102
VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

f = 1 MHz Ta = 25°C Ta = 25°C

IE = 0
Ta = 25°C
4
Collector output capacitance

103 10

Output current IO (µA)

Input voltage VIN (V)

3

102 1

10 10 −1
1

0 1 10 −2
10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR921NJ

IC  VCE VCE(sat)  IC hFE  IC
160 10 480
Collector-emitter saturation voltage VCE(sat) (V)

IC / IB = 10 VCE = 10 V
Ta = 25°C

400

Forward current transfer ratio hFE

IB = 1.0 mA
0.9 mA
Collector current IC (mA)

120 0.8 mA
0.7 mA Ta = 75°C
0.6 mA 1 320
0.5 mA
0.4 mA
25°C
80 240
0.3 mA

Ta = 75°C −25°C
0.2 mA 10 −1 160
40 25°C

0.1 mA 80
−25°C

0 10 −2 0
0 2 4 6 8 10 12 1 10 102 103 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

6 104 102
f = 1 MHz
(Common base, input open circuited) Cob (pF)

VO = 5 V VO = 0.2 V
IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

103 10
Output current IO (µA)

Input voltage VIN (V)

3 102 1

10 10 −1

0 1 10 −2
1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

16 SJH00039BED
 Transistors with built-in Resistor UNR921xJ Series

Characteristics charts of UNR921TJ

IC  VCE VCE(sat)  IC hFE  IC
103

Collector-emitter saturation voltage VCE(sat) (mV)

160 400
IC / IB = 10 VCE = 10 V
Ta = 25°C

Ta = 75°C

Forward current transfer ratio hFE

IB = 1.0 mA
0.9 mA
Collector current IC (mA)

120 0.8 mA 300

0.7 mA
0.6 mA 25°C
0.5 mA Ta = 75°C
0.4 mA
80 102 200
0.3 mA
25°C −25°C
−25°C
0.2 mA

40 100
0.1 mA

0 10 0
0 2 4 6 8 10 1 10 102 10 −1 1 10 102
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob  VCB IO  VIN VIN  IO

4 102 102
VO = 5 V VO = 0.2 V
(Common base, input open circuited) Cob (pF)

Ta = 25°C Ta = 25°C

10
Collector output capacitance

3
Output current IO (mA)

Input voltage VIN (V)

10
1

10 −1
1
1
10 −2

0 10 −3 10 −1
1 10 102 0.25 0.75 1.25 10 −3 10 −2 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UNR921VJ

IC  VCE VCE(sat)  IC hFE  IC
160 10 240
Collector-emitter saturation voltage VCE(sat) (V)

IC / IB = 10 VCE = 10 V
Ta = 25°C

200
Forward current transfer ratio hFE
Collector current IC (mA)

120 IB = 1.0 mA
0.9 mA 1 160
0.8 mA
0.7 mA Ta = 75°C
80 120
0.6 mA 25°C
Ta = 75°C
0.5 mA 10 −1 25°C 80
40
0.4 mA −25°C
−25°C 40

0.3 mA
0.2 mA
0 10 −2 0
0 2 4 6 8 10 12 1 10 102 103 1 10 102 103
Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

SJH00039BED 17
 UNR921xJ Series Transistors with built-in Resistor

Cob  VCB IO  VIN VIN  IO

6 102
f = 1 MHz 104
(Common base, input open circuited) Cob (pF)

VO = 5 V VO = 0.2 V
IE = 0 Ta = 25°C Ta = 25°C
Ta = 25°C
5
Collector output capacitance

10
103

Output current IO (µA)

Input voltage VIN (V)

4

3 1
102

2
10 −1
10
1

0 10 −2
1
1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102
Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

18 SJH00039BED
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and semiconductors described in this material

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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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2003 SEP