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Parishram (2024)
Semiconductor Electronics DPP-01

1. Band structure of a particular semiconductor is 6. In a semiconductor:

shown in figure. If lattice constant of this
semiconductor is decreased, then choose the
correct option from the following:
(1) there are no free electrons at 0 K
(2) there are no free electrons at any temperature
(3) the number of free electrons increases with
pressure
(4) the number of free electrons is more than that
in a conductor

7. The resistivity of a semiconductor at room

temperature is in between
(1) EC decreases (2) Eg increases (1) 10−2 to 10−5  cm (2) 10−3 to 106  cm
(3) EV decreases (4) All of these (3) 106 to 108  cm (4) 1010 to 1012 cm

2. The distinction between conductors/ insulators and 8. When an impurity is doped into an intrinsic
semiconductors is largely connected with:
semiconductor, the resistance of the
(1) the type of crystal lattice
semiconductor:
(2) binding energy of their electrons
(1) increases
(3) relative width of their energy gap
(4) None of the above (2) decreases
(3) remains unchanged
3. The energy gaps in energy band diagrams of a (4) becomes zero
conductor, semiconductor and insulator are E1, E2
and E3. Arrange them in increasing order. 9. How does the conductivity of a semiconductor
(1) E1 < E2 < E3 (2) E2 < E1 < E3 change with the rise in its temperature?
(3) E1 > E2 > E3 (4) E3 < E2 < E1 (1) Decreases (2) Increases
(3) Remains same (4) None of these
4. A semiconductor has equal electron and hole
concentration of 6 104 m−3 . On doping with a 10. In figure given below Vo is the potential barrier
certain impurity, electron concentration increases across a p-n junction, when no battery is connected
to 8 1012 m−3 . Identify the type of semiconductor. across the junction:
(1) n-type (3) Both (1) and (2)
(2) p-type (4) None of these

5. The conductivity of a semiconductor increases with

increase in temperature, because :
(1) number density of free current carries
increases
(2) relaxation time increases
(3) both number density of carries and relaxation
time increase
(4) number density of carries increases, relaxation
time decreases but effect of decrease in
relaxation time is much less than increase in
number density
(1) 1 and 3 both correspond to forward bias of
junction
(2) 3 corresponds to forward bias of junction and
1 corresponds to reverse bias of junction
(3) 1 corresponds to forward bias and 3
corresponds to reverse bias of junction
(4) 3 and 1 both correspond to reverse bias of
junction
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Note: Kindly find the Video Solution of DPPs Questions in the DPPs Section.
Answer Key
1. (4) 6. (1)
2. (3) 7. (2)
3. (1) 8. (2)
4. (1) 9. (2)
5. (4) 10. (2)

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