COURSEPACK

SCHEME
Course Title SEMICONDUCTOR AND Course Type Integrated
OPTO-ELECTRONIC DEVICES
Course Code Class B.Tech.: Sem-I/II
C1UD124B Programs, ALL
Activity Credits Credit Hours Total Number of Assessment in
Classes per Semester Weightage
Lecture 3 3
Instruction Tutorial - -

Practical
Tutorial
Theory
delivery

study
Self-

SEE
Practical 1 2

CIE
Self-study - 7
Total 4 12 45 - 30 105
50% 50%
Course Lead Dr. Anis Ahmad Course Dr. Prashant Kumar Mishra
Coordinator
Names Theory Practical
Course Dr. Asheesh Kr. Gupta, Dr. Susmita Majumdar , Dr. Asheesh Kr. Gupta, Dr. Susmita
Instructors Dr. Anis Ahmad , Dr. S. Kundu, Dr. Prabhakar Majumdar , Dr. Anis Ahmad , Dr. S.
Singh , Dr. Ranjeet Kumar , Dr. Akash Mathur Kundu, Dr. Prabhakar Singh , Dr.
Dr. Deepak Gupta , Dr. Milan Singh , Dr. Amit Ranjeet Kumar , Dr. Akash Mathur
kumar Srivastava, Dr.Yogendra Singh. Dr. Dr. Deepak Gupta , Dr. Milan Singh ,
Sanjeev Kumar Singh, Dr. Prashant Mishra, Dr. Dr. Amit kumar Srivastava,
Vijay Singh, Dr. Dinesh Chaudhary, Dr. Ankan Dr.Yogendra Singh. . Dr. Sanjeev
Pandey. Kumar Singh, Dr. Prashant Mishra,
Dr. Vijay Singh, Dr. Dinesh
Chaudhary, Dr. Ankan Pandey.

COURSE OVERVIEW
Semiconductor devices are at the heart of the present technological revolution, and they are
increasingly prominent in our daily life. This course develops the basic concepts necessary to
understand the fundamentals of semiconductor devices. We will apply these concepts to gain insight
into the operation of various semiconductor devices such as p-n junction diodes, solar cells and LEDs.
This course is primarily directed for undergraduate students pursuing B. Tech. Programs.

PREREQUISITE COURSE

PREREQUISITE COURSE YES /No

REQUIRED
If, yes please fill in the Details Prerequisite Prerequisite
course code course name
No NA
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 COURSE OBJECTIVE
Provides insight into why students learn what they learn before beginning a course.

 To provide the knowledge of semiconducting materials and its properties

 To provide the basic knowledge of quantum mechanics, semiconductor devices, and Opto-electronic
components/devices.
 To learn the fabrication processes of electronic components/devices.
 To perform some experiments that demonstrate the phenomenon like Hall Effect, Sonometer, and CRO
zener diode etc.

COURSE OUTCOMES (COs)

After the completion of the course, the student will be able to:

After the completion of the course, the student will be able to:
CO No. Course Outcomes
124B.1 Explain the basic fabrication process and behavior of semiconductors under different
temperature environment, and carrier concentration.
124B.2 Interpret quantum mechanical approach for application of opto-electronic devices
and explain the interaction of radiation with matter.
124B.3 Apply the knowledge of semiconducting material properties in the applications of
optical fibres, lasers, and sensors.
124B.4 Apply the I-V characteristics of semiconductor diode to develop basic electronic
circuits for different applications.
124B.5 Develop the scientific models with the ability of experimental demonstration using
opto-electronic devices to cater the needs of industry as well as society.

BLOOM’S LEVEL OF THE COURSE OUTCOMES

INTEGRATED
Remember Understand Apply Analyse Evaluate Create
CO No.
KL1 KL 2 KL 3 KL 4 KL 5 KL 6
124B.1 L2
124B.2 L2
124B.3 L3
124B.4 L3
124B.5 L4

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PROGRAM OUTCOMES (POs): AS DEFINED BY CONCERNED THE APEX BODIES
Engineering Graduates will be able to:
PO1 Engineering knowledge: Apply the knowledge of mathematics, science,
engineering fundamentals, and an engineering specialization to the
solution of complex engineering problems.
PO2 Problem analysis: Identify, formulate, review research literature, and
analyze complex engineering problems reaching substantiated
conclusions using first principles of mathematics, natural sciences, and
engineering sciences.
PO3 Design/development of solutions: Design solutions for complex
engineering problems and design system components or processes that
meet the specified needs with appropriate consideration for the public
health and safety, and the cultural, societal, and environmental
considerations.
PO4 Conduct investigations of complex problems: Use research-based
knowledge and research methods including design of experiments,
analysis and interpretation of data, and synthesis of the information to
provide valid conclusions.
PO5 Modern tool usage: Create, select, and apply appropriate techniques,
resources, and modern engineering and IT tools including prediction and
modeling to complex engineering activities with an understanding of the
limitations.
PO6 The engineer and society: Apply reasoning informed by the contextual
knowledge to assess societal, health, safety, legal and cultural issues
and the consequent responsibilities relevant to the professional
engineering practice.
PO7 Environment and sustainability: Understand the impact of the
professional engineering solutions in societal and environmental
contexts, and demonstrate the knowledge of, and need for sustainable
development.
PO8 Ethics: Apply ethical principles and commit to professional ethics and
responsibilities and norms of the engineering practice.
PO9 Individual and team work: Function effectively as an individual, and as a
member or leader in diverse teams, and in multidisciplinary settings.
PO10 Communication: Communicate effectively on complex engineering
activities with the engineering community and with society at large,
such as, being able to comprehend and write effective reports and
design documentation, make effective presentations, and give and
receive clear instructions.
PO11 Project management and finance: Demonstrate knowledge and
understanding of the engineering and management principles and apply
these to one’s own work, as a member and leader in a team, to manage
projects and in multidisciplinary environments.
PO12 Life-long learning: Recognize the need for, and have the preparation
and ability to engage in independent and life-long learning in the
broadest context of technological change.
Programme Specifics Outcome (PSO) (if any) –
At the end of the program, the student
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 PSO1 should be able to understand the concepts of Electronics & Communication
engineering and their applications in the field of semiconductor technology,
consumer electronics, embedded system, communication/ networking and other
relevant areas.
PSO2 Should have an ability to apply technical knowledge and usage of modern
hardware & software tools related to Electronics & Communication engineering
for solving real world problems.
PSO3 Should have the capability to analyze, comprehend, design & develop electronic
subsystems/ systems for a variety of engineering applications and thus
demonstrating professional ethics & concern for societal well being.

COURSE ARTICULATIONMATRIX
T

PO10

PO11

PO12

PSO1

PSO2

PSO3
COs#/
PO1

PO2

PO3

PO4

PO5

PO6

PO7

PO8

PO9
POs

1. 2 2
2. 2 2
3. 2 2
4. 2 2
5. 2 2 2 2 2

Note: 1-Low, 2-Medium, 3-High

COURSE ASSESSMENT

S. No. Types of
course CIE TOTAL
(B) Final Marks
CIE*0.5+SEE*0
MTE LAB LAB CIE SEE .5
Work Exam
+Record

1. Integrate 50 25 25 100 100 100

d

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 COURSE CONTENT
THEORY+ PRACTICAL
Content

Theory:-
Introduction to Fabrication of Electronic Components/Devices:
Semiconductor wafers, Doping, Diffusion, Annealing, Metallization, Masking, Bottom-up approach vs Top-
down approach, Lithography/Screen printing.
Basic Quantum Mechanics:
Overview of Blackbody radiation, Planck hypothesis, and Photoelectric effect; Postulates of quantum mechanics
Matter Waves, Uncertainty Principle, Wave-function, Schrodinger equation, Solution of Schrodinger equation
for particle in a box, Quantum tunneling and its examples, Scanning tunneling microscope, Quantum
confinement at nano scale and concepts of quantum dot, quantum wire & quantum well.
Physics of Basic Semiconductors devices:
Overview of semiconductor Physics, Qualitative description of formation of energy bands in solids and
bandgap, Density of states & Fermi energy in intrinsic semiconductor, E-K diagram, and Effective mass &
concept of hole. Doped semiconductors, Direct-indirect band gap semiconductors, Temperature dependence on
electron and hole concentration, Concept of mobility, Hall effect, PN junction diode, Zener diode.
Physics of Opto-electronic Components/Devices:
Interaction of radiation with Matters,absorption , Spontaneous and stimulated emission of radiation
Principle of Lasers,three level and four level laser,Gas lasers (He-Ne Laser),Recombination /generation of
electron- hole, Semiconductor laser (laser diode); Solar cell, Light Emitting Diode (LED), Organic Light
Emitting Diode (OLED), Semiconductor sensors i.e., Photodiode sensor, IR sensor; Fibre Optics.
Practical:-
1. To study P-N Junction diode Characteristics and determine static and dynamic resistance.
2. To study V-I characteristics of light emitting diode (LED).
3. To determine wavelength of laser using He-Ne Laser.
4. To determine Planck’s constant using LED method.
5. To study Hall Effect and determine hall coefficient, carrier density, and mobility.
6. To determine efficiency of solar cell using its characteristics
7. To determine wavelength of light using mono chromatic and non-monochromatic light sources by grating
8. To determine frequency of A.C. mains using sonometer.
9. To determine wavelength of sodium light using Newton’s Rings.
10. To determine the low resistance using Carey-Foster Bridge (CFB).
11. To study I-V characteristics of Zener diode,
12. To determine energy band-gap of semiconductor –Four probe method

Other laboratory activities:

1. Practice session on using Multi-meter for measuring physical parameters.
2. Practice session on spectrometer and its uses.
3. Practice session on using CRO for observing physical parameters.

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4. Practice session on using Galvanometer, Ammeter, and Voltmeter for measuring physical parameters.
5. Practical session on mechanism and design the circuits on Breadboard.

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 LESSON PLAN FOR Integrated COURSES
FOR THEORY 15 weeks * 3 Hours = 45 Classes) (1credit = 1Lecture Hour)
FOR PRACTICAL 15 weeks * 2Hours = 30 Hours lab sessions (1 credit = 2 lab hours)

L- Topic for Delivery Tutorial/ Skill Competency

No Practical
Plan
1 Semiconductor wafers Theory Ability to utilize the
changes properties of
2 Doping in Semiconductor Theory materials at nano-scale
3 Diffusion and Annealing Theory
4 V-I Characteristics PN junction diode Practical
5 Practical
6 Metallization and Masking Theory
Fabrication process
semiconductors in the
electronics devices in
modern era and Able
to perform the
experiment of energy
band gap

7 Bottom-up approach vs Top-down approach Theory

8 Lithography/Screen printing Theory

9 V-I Characteristics of LED Practical

10 Practical
11 Overview of Blackbody radiation Theory Describe basics of
Ability to use quantization quantum mechanics,
12 Planck hypothesis Theory concept and through
experimental activity,
13 Photoelectric effect Theory determine Planck's
Constant
14 Wavelength Of (He- Ne) Laser Practical
15 Practical
16 Matter Waves Theory

17 Uncertainty Principle Theory

18 Wave-function Theory

19 Planck's Constant by LED Practical

20 Practical
21 Schrodinger equation Theory

22 Solution of Schrodinger equation for particle in a box Theory

23 Quantum tunnelling and its examples Theory Ability to use the

morphology as per
24 Hall Effect requirement
Practical

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25 Practical
26 Scanning tunnelling microscope Theory

27 Quantum confinement at nano scale Theory

28 concepts of quantum dot, quantum wire & quantum Theory Ability to operate the Solar Use the concept of
well. cell Energy band gap energy band gap for
29 Solar Cell Practical instrument selecting the materials
30 Practical for opto-electronic
31 Overview of semiconductor Physics Theory devices

32 Qualitative description of formation of energy bands Theory

in solids
33 Energy bandgap, Theory

34 Wavelength of Light using Grating Practical

35 Practical
36 Density of states & Fermi energy in intrinsic Theory
semiconductor
37 E-K diagram, Theory

38 Effective mass & concept of hole. Theory

39 Frequency of AC Using Sonometer Practical

40 Practical
41 Doped semiconductors Theory

42 Direct-indirect band gap semiconductors, Theory

43 Temperature dependence on electron concentration Theory Able to find mobility and Determination of
carrier concentration in a mobility and
44 Wavelength of Sodium light by Newton's ring Practical semiconductor conductivity
45 Practical
46 Temperature dependence on hole concentration Theory

47 Concept of mobility Theory

48 Hall Effect Theory

49 Low Resistance by CFB Practical

50 Practical
51 PN junction diode, Theory

52 Zener diode. Theory Able to use Zener diode as Use to design voltage
regulator regulator
53 Interaction of radiation with Matters Theory Ability to differentiate the To operate the laser in
Coherent and incoherent
light
54 I-V Characteristics of Zener Diode Practical
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55 Practical

56 Absorption, Spontaneous and stimulated emission of Theory

radiation
57 Principle of Lasers Theory

58 Three level laser and four level lasers Theory

59 Energy Band Gap by Four-Probe Practical

60 Practical

61 Gas lasers (He-Ne Laser) Theory

62 Recombination /generation of electron- hole Theory

63 Semiconductor laser (laser diode) Theory Ability to use LED and To use the LED and
OLED sensor as per OLED in on bread
64 Practice of Multi-meter functionalities Practical application Board

65 Practical

66 Solar cell Theory

67 Light Emitting Diode (LED) Theory

68 Organic Light Emitting Diode (OLED), Theory

69 Measurement Voltage and time parameters by CRO Practical

70 Practical
71 Photodiode sensor Theory

72 IR sensor Theory

73 Optical fiber Theory

74 Electronic Circuit design on bread Board Practical

75 Practical

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BIBLIOGRAPHY

TextBook:

1. Donald A Neamen, Dhrubes Biswas, “Semiconductor Physics and Devices”, Tata McGraw Hill
Education Pvt. Ltd. New Delhi, Special Indian edn., 2012 (Reprint 2015).

2. S.O. Pillai , Solid State Physics, , New Age International (P) Ltd. Sixth edition ISBN-9788122427264
( 2010).

ReferenceBooks

1. Robert Eisbeg& Robert Resnick, “Quantum Physics of Atoms, Molecules, Solids, Nuclei, and
Particles”, Wiley, 2006.

2. ArtherBeiser, “Concept of Modern Physics”,5th edn., Tata McGrawHill, New Delhi, 1997.

3. B.E.A. Saleh and M.C. Teich, Fundamentals of Photonics, John Wiley & Sons, Inc., 2007.

 Journals/Magazines/Govt.Reports/Gazatte/IndustryTrends
Semiconductor devices
https://www.mdpi.com/journal/electronics/sections/Semiconductors
International Journal of Thermophysics (https://www.springer.com/journal/10765)

 Webliography(TwoelectronicdocumentsorwebsitesthatrelatetotheCourse
* https://www.britannica.com/science/thermal-energy

* https://www.britannica.com/technology/semiconductor-device

 SWAYAM/NPTEL/MOOCsCertification (Two-Three numbers)

1. Fundamentals of semiconductor devices, Prof. Digbijoy N. Nath | IISc Bangalore
(https://nptel.ac.in/courses/108108122)
2. Introduction to Semiconductor Devices Prof. Naresh Kumar Emani IIT Hyderabad
(https://onlinecourses.nptel.ac.in/noc22_ee91/course)

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 PROBLEM-BASED LEARNING

Exercises in Problem-based Learning (Assignments)

Problem KL
1 Determine the current through an ideal p-n junction shown in the circuit K3

2 In the given circuit has two ideal diodes connected as shown in figure below. Find the K3
current flowing through resistance R1 ?

3 Ge and Si diodes start conducting at 0.3V and 0.7Vrespectively. In following figure if Ge

diode connection are reversed , The Vo changes by: ( assume that the Ge diode has large K4
breakdown voltage)

4 For the circuit shown in Fig.1 (i), find : (i) the output voltage (ii) the voltage drop K4
across series resistance (iii) the current through zener diode.

5 A 7.2 V zener is used in the circuit shown in given figure and the load current is to
vary from 12 to 100 mA. Find the value of series resistance R to maintain a voltage of K3
7.2 V across the load. The input voltage is constant at 12V and the minimum zener
current is 10 mA.

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6 A Si wafer is uniformly doped p-type with NA=1015 cm−3. At T=300 K, Determine the K3
equilibrium electron and hole concentrations (take ni=1×1010 cm−3)
7 A silicon PN junction is forward biased with a constant current at room temperature. K3
When the temperature is increased by 10oC, find the decreased forward bias voltage
across the PN junction.
8 A diode with potential barrier 0.6 V across its junction, is connected in series with K3
resistance of 24 Ω across source. If 0.2 A current passes through resistance, calculate
the source voltage. Also draw the circuit diagram and mention the biasing of the diode
9 In a semiconductor, the doping of pentavalent atom is increased, interpret graphically K2
how the Fermi energy level varies.
10 Draw the Fermi-Dirac distribution function curve with energy (E) at T= 0 K and T  K4
300 K. For a semiconductor, at a particular temperature, the Fermi
level EF is 0.2 eV below Ec. The probability of an electron occupying an energy state
at E=(Ec+0.025) eV is 1×10−6. Find the temperature at which this occurs
(Use kB=8.62×10-5 eV/K)
11 Calculate the wavelength of emitted radiation (in nm) by electron while transiting K3
from one energy state of −15 eV to another energy state of −5 eV .

12 Electric field of 200 volt/m is applied to a sample of n type semiconductor whose Hall K3
coefficient is -0.0145 m2/coulomb. Calculate the current density in the sample
assuming mobility of electron equals to 0.36 V-1 S-1.
13 A diode with potential barrier 0.6 V across its junction, is connected in series with K4
resistance of 24 Ω across source. If 0.2 A current passes through resistance, calculate
the source voltage. Also draw the circuit diagram and mention the biasing of the diode

14 K4
The energy of electron in semiconductor is given by expression:
2 2
E=A ћ k +B , here k is propagation vector and A & B are some constants Find the velocity
¿
and effective mass (m ) of the electron in terms of k.
15 The ideal power given by solar cell is 500mW, and the maximum current and K3
maximum voltage given by solar cell in the circuit is 50mA and 5V. Determine the fill
factor of the solar cell.
16 Find the value of energy band gap of semiconductor that can emit the radiation of K3
wavelength 620 nm.
17 An electric field of 200 volt/m is applied to a sample of n type semiconductor whose K3
Hall coefficient is -0.0145 m2/coulomb. Calculate the current density in the sample
assuming mobility of electron equals to 0.36 V-1 S-1.
18 Evaluate the Fermi function for an energy kBT above Fermi energy in a K4
semiconductor. Where, kB Boltzmann constant and T is temperature in Kelvin.
19 Interpret why A tan x and A cos x are not well behaved wave function while A sin x K4
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 represents suitable wavefunction (here A is a constant)
20 An electron is bound in a one dimensional potential box which has a width 2.5x10-10 K4
m. Assuming the height of the box to be infinite, calculate the lowest two permitted
energy values of the electron.[Given Planck’s Constant ( h) =6.625x10-34 J.s. and
mass of electron (m) = 9.1x10-31 kg.]
21 Consider a particle trapped in an infinite 1-D potential barrier. Prove that the energy of K3
the particle is quantized and only depends on the square of quantum number. If the
width (L) of 1-D infinite potential box is 20 nm, calculate the energy of electron in the
ground state and third excited state.
22 Given below are three statements. select the correct option K4
S1 : It is difficult to build a blue laser compared to a red laser.
S2 : Spontaneous emission becomes stronger with decreasing wavelength.
S3 : Spontaneous emission becomes weaker with decreasing wavelength.
Statement S1 and S3 are true and S2 is false.
Statement S1 and S2 are false and S3 is true.
Statements S1 and S3 are true. S3 is the correct explanation of S1.
Statements S1, S2 and S3 are true.
Only statements S1 and S2 are true. S2 is the correct explanation of S1.
Statements S1, S2 and S3 are false.
23 Consider the I-V characteristics of various diodes made up of different materials as shown in K3
the figure below:

Given below are three statements about bulk materials:

S1 : LEDs made from Si and Ge are efficient as their thresholds are less.
S2 : Si and Ge diodes cannot emit light.
S3 : They are indirect bandgap materials.
Statement S1 and S3 are true and S2 is false.
Statement S1 and S2 are false and S3 is true.
Only statements S2 and S3 are true. S3 is the correct explanation of S2.
Statements S1, S2 and S3 are true.
Statements S1 and S3 are true. S3 is the correct explanation of S1.
Statement S1, S2 and S3 are false.
24 K4
An electron is in motion along a line between x=0 and x=L with zero potential energy. At points for which x

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25 Why core has more refractive index than cladding? A Fiber made of silicon with a K2
diameter of the core is large such that it consists of core and claddings refractive
indexes of 1.40 and 1.37. Find the NA of Fiber.
26 A black body at 227 C radiates heat at a rate of 7 Cal/cm2/s. Prove that at a temperature of K3
727 C, the rate of heat radiation will be 112 Cal/cm2/s.
27 A black body is maintained at 27 C and 927 C. Prove that the ratio of radiations emitted K2
will be 256.
28 Radiation with wavelength 300 nm is incident on a silver surface. Will photoelectrons be K2
observed? The work function of silver is ϕ =4.73eV
29 A star such as our Sun will eventually evolve to a “red giant” star and then to a “white K3
dwarf” star. A typical white dwarf is approximately the size of Earth, and its surface
temperature is about 2.5×104K. A typical red giant has a surface temperature of 3.0×103K.
and a radius ~100,000 times larger than that of a white dwarf. What is the average radiated
power per unit area and the total power radiated by each of these types of stars? How do
they compare?
30 A 1.0-kg mass oscillates at the end of a spring with a spring constant of 1000 N/m. The K4
amplitude of these oscillations is 0.10 m. Use the concept of quantization to find the energy
spacing for this classical oscillator. Is the energy quantization significant for macroscopic
systems, such as this oscillator?
31 The N.A. of an optical fiber is 0.2 when surrounded by air. Determine the refractive index of K3
its core given the refractive index of the cladding is 1.59. Also find the acceptance angle
when the fiber is in water. Assume the refractive index of water is 1.33.
32 A typical relative refractive index difference for an optical tube design for long distance K3
transmission is 20%. Estimate the numerical aperture and critical angle at core cladding
interface with the fiber when core refractive index is 1.46.
33 Write the law which governs the propagation of light along the length of an optical fiber K2
and discuss the fundamental mechanism for attenuation in optical fiber.
34 In a step-index fiber in the ray approximation, the ray propagating along the axis of the fiber K3
has the shortest route, while the ray incident at the critical angle has the longest route.
Determine the difference in travel time (in ns/km) for the modes defined by those two rays
for a fiber with ncore = 1.5 and ncladding = 1.485.
35 Light travelling in air strikes a glass plate at an angle I1 = 33° , where I1 is measured between K3
the incoming ray and glass surface. Upon striking the glass, part of the beam is reflected and
part is refracted. If the reflected and refracted beams make an angle of 90o with each other,
Find the refractive index of the glass and critical angle for the glass
36 Write three advantages of using LEDs over conventional light sources in terms of energy K2
efficiency, lifespan, and environmental impact

37 How does the construction and composition of an LED contribute to its ability to emit light K2
efficiently and in a specific color or wavelength range?
38 Describe the fundamental differences between Organic Light Emitting Diodes (OLEDs) and K2
traditional LEDs in terms of their structure, materials, and light-emitting mechanisms

39 Explain the function of photo diode as a light-sensitive semiconductor device Describe its K2
basic working principle and the mechanism of converting light into electrical signals.
40 An LED is constructed from a pn junction based on a certain semi-conducting material whose K2

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 energy gap is 1.9 eV. Then the wavelength of the emitted light is

41 K3
Mention the important considerations required while fabricating a p-n junction diode
to be used as a Light Emitting Diode (LED). Write the order of band gap of material for making
an LED, if it is required to emit light in the visible range
42 Explain the role of the mask used in semiconductor manufacturing. Why masking is important? K2
43 K4
We cannot take one slab of p-type semiconductor and physically join it to
another slab of n-type semiconductor to get p-n junction. justify
44 Why should a photo diode be operated at reverse bias? K2
45 Lasing activity cannot be made to occur with just two energy levels. write your K2
justification

STUDENT-CENTEREDLEARNING (SELF-LEARNING TOWARDS LIFE-LONG-LEARNING)

A) COURSE-BASEDPROJECT(Psychomotorskills) { NA}

B) SELF-LEARNINGTHROUGHMOOCs (Cognitive Skills):Certification

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