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Pure-Play GaN Foundry Technology for RF Applications

Che-Kai Lin, Jhih-Han Du, Albert Wang, Sheng-Wen Peng, Chao-Hung Chen, Chai-Hao Chen, Tung-Yao
Chou, Wei-Chou Wang, Jya-Shian Wu, Richard Kuo, Clement Huang, I-Te Cho, Walter Wohlmuth,
Shinichiro Takatani

WIN Semiconductors Corp., No. 35, Technology 7th Rd., Hwaya Technology Park, Kuei Shan Hsiang, Tao
Yuan Shien, 333, R.O.C.
E-mail: weichouw@winfoundry.com
Phone: +886-3-3975999#1527
(Invited)

Abstract — This paper presents the development of a newly
available GaN HEMT technology portfolio and focuses on
fabrication, RF characterization, reliability performance and
device modeling. Our pure-play GaN Foundry service supports
RF MMIC and discrete device applications with comprehensive
specifications and wafer acceptance tests. The GaN HEMT
technologies enable power amplifier, low-noise amplifier, and RF
switch products utilizing supply voltages of 28V and 50V and
operational frequencies extending from IEEE standard L- to Ku-
band.
Index Terms —AlGaN/GaN, field-plate, MTTF, MMIC, PA,
T-gate
I. INTRODUCTION
GaN High Electron Mobility Transistors (HEMTs) are
attractive for many applications in green energy and broad
band systems including a variety of high-frequency and high-
power, microwave- and millimeter-wave applications, for both
commercial and defense markets [1]. The driving force to
realize GaN devices as a mainstream and mass production
technology relies not only on demand, but also good reliability.
Leveraging the experience in GaAs pHEMT, HBT, and
BiHEMT, WIN Semiconductors is developing AlGaN/GaN
HEMT to broaden their foundry services. In 2013, WIN
released their first 0.25µm gate length technology (NP25-00)
operating in X-band by using high-volume manufacturing
techniques. Recently, WIN further demonstrated 0.5µm and
0.15µm gate length transistors in an effort to provide
technology not only in X-, Ku-band applications but also for
L-, S-, and Ka-band products. In this paper, we address the
manufacturing, device characteristics, and present a portfolio
of reliable GaN technologies for high power millimeter-wave
applications.
II. 28V TECHNOLOGY
The fabrication of the 0.25µm T-gate transistor is first
started with AlGaN/GaN layers grown by MOCVD, of
proprietary epitaxy vendor dependent nucleation and buffer
stacks, on top of semi-insulating SiC substrates. The substrates
are either 4H- or 6H- poly-type which are used
interchangeably in the GaN manufacturing line. Silicon
Nitride (SiN) layers are deposited by PECVD at designed
thicknesses, depending on whether it functions as a
passivation or insulating layer. Ni-based T-gates with a low-
resistance metal stack are supported by an underlying 1st SiN
layer that forms a gate-coupled field-plate. A 2nd SiN layer
over top of the gate, together with a metallization extending
beyond the T-gate edge on the drain-side of the transistor, is
used to form an industry-standardized source-coupled field-
plate (SFP). Gate metal and sequential metallization were
topped with Au-metal interconnect layers forming MET0, SFP,
and MET1 which are 0.6, 1.1, and 1.1µm thick, respectively.
An Au-based 4µm thick MET2 air bridge layer completes the
global interconnect layers to reduce resistivity and to enhance
current handling. The fT and fmax obtained from a 2x125µm
device are 24.5GHz and 79GHz at Vd=28V. The transistor
remains stable across a broad frequency range and provides
18.5dB gain at 10GHz.
A. 10GHz Load-Pull Characterizations
X-band GaN based MMIC amplifiers have been key
components for active, electronically scanned arrays (AESA)
used in transmitter and receiver modules (TRMs) in radar
applications. On-wafer load-pull characterization at 10GHz
was first evaluated to determine the power performance with
different gate periphery. Table 1 displayed the Pout, Gain and
PAE tuned for maximum power, biased at Vd=28V and
Id=100mA/mm. The general purpose 28V transistor can
achieve 4W/mm.
TABLE I
Summary of load-pull performance vs gate periphery

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 B. 3.5 GHz (S-Band) Load-Pull Characterrizations
S-band applications for civilian and deefense radar systems
need a wide range of power from single watts
w to hundreds of
watts. In this instance, we extended the drain
d voltage applied
to the transistor up to 40V, to enhance thhe maximum power
handling. The PAE, Pout and Gain are shown in fig. 1 for
10x125µm transistors with a 3.5GHz signals biased under
Vd=40V measured in CW mode. By opptimizing the source
and load impedance for maximum poweer, Pout can achieve
more than 5W/mm, with 46% PAE at P5dB B into compression.
40
tune for Pout
35
tune for PAE
Pout (dBm) Gain (dB)
D. 28V Reliability
Mean–time-to-failure is a method
m of evaluating the device’s
long-term reliability when operated at a specific junction
temperature. In this test, foour groups of 40 transistors are
biased at Vd of 28V and Id of 75mA, and each group is then
stored at a different ambient temperature until all parts exhibit
failure. The ambient temperratures of 150°C, 165°C, 180°C
and 195°C, predict a peak junction temperature of 313°C,
332°C, 351°C and 369°C respectively. The calculated MTTF
is 3.53E6 hours at a juncttion temperature of 225°C. The
activation energy (Ea) of 2.1eeV is shown in fig. 3.
80
Pout 70

30 60
PAE
25 50 PAE (%)
20 40

15 Gain 30

10 20

5 Freq: 3.5GHz
0 0
0 5 10
Pin (dBm)
Fig. 1. Load-pull comparison of a 10x125—mm transistor at 3.5GHz
with bias points of Vd=40V and Id=10mA/mm m tuned for maximum
output power and maximum power-added efficiency.
C. 2-26GHz Noise Figure
Using an on-wafer source-pull test set up, noise figure
testing shown in fig. 2 is performed on a set of 25—m gate
width devices. The source is tuned forr these devices for
optimal noise figure and Fmin. The bias connditions used for the
test are Vd=10V at Id=100mA/mm and the measurement
frequency is from 2 to 26GHz. The associiated gain is 12dB at
10GHz.
2.5
Noise Figure, NFmin (dB)
F 10
V
Vd=40V
15 20 Fig. 3. Arrhenius plot of 0.225µm(NP25) GaN 28V technology.
20% Idss degradation is as failurre criteria.
E. 28V GaN Modeling
In the newly developed d 0.25µm GaN model, Rth is
provided as an external paraameter to account for self-heating
effects and interactions withh the die attach material and the
device package. The valuee of Rth can be modified by
customers for their own die attach and packages. The
measured and modeled largge-signal power sweep data for 3
different bias points is show
wn in Fig. 4. The model is able to
predict the measured data fo or Pout, Gain very well. There is
also a good correlation betwween measured and modeled drain
current under RF drive. Thee PDK is supported in both ADS
and AWR platforms. Comprehensive passive modeling is also
included in the MMIC processs design kit.

2.0 Vd=10V
Id=100mA/mm

1.5 2X25um
4X25um
6X25um
1.0 8X25um
10X25um

0.5

0.0
1 10
Frequency (GHz))

Fig. 2. 2 to 26GHz Noise Figure performance of NP25 technology, Fig. 4. Model verification for 10GHz large-signal power sweep tests
with Vd=10V, Id=100mA/mm. with 50ohm termination for a 100x125µm device.


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 III. 50V TECHNOLOGY of source inductance in ISV structure enables the K=1
breakpoint to be extended to higher frequency in comparison
A new NP50 GaN HEMT technology has been developed
to the traditional OSV design. The small-signal gain
for applications requiring high peak power and high peak-to-
comparison for transistors with OSV and ISV is shown in fig.
average ratios, such as LTE, pulsed radar, and small cell base
6, where the device size is 1.25mm.
station. 3.5GHz large signal performance shown in Fig. 5 is
first carried out on a 10x125µm device. Power gain is
maintained at greater than 15 dB with 7W output power, and
PAE of greater than 50% for a transistor tuned for maximum
power and for maximum efficiency. Table II summarizes the
pulsed/CW mode power characteristics. The maximum Pout
for the NP50 technology is >6.5W/mm with >60% PAE.
50
45 tune for Pout/PAE 60
tune for Gain
Pout (dBm) Gain (dB)

40
50
35 Pout
30 40 PAE (%)
25
30
20 Fig. 6. Small signal gain comparison of OSV and ISV structure.
15 20
Gain
10 PAE VI. CONCLUSIONS
10
5
High efficiency, wideband and reliable NP25/NP50
0 0
0 5 10 15 20 25 GaN/SiC HEMT technologies for RF applications have been
Pin (dBm) presented in this paper, and are available for use through
foundry services. Furthermore, value-added services such as
Fig. 5. NP50 load-pull performance of a 10x125—m transistor at 100% DC KGD test (shown in fig. 7), automated visual
3.5GHz biased at Vd=50V, Id=10mA/mm and tuned for maximum inspection, non-wetting backside films for eutectic die attach,
power and tuned for maximum PAE. and a variety of mask tape out options are available for
customers who need either a full wafer, a 1/4 wafer or a small
TABLE II mm2 area for their designs. These technologies are well-suited
Summary of 50V load-pull performance in pulse/CW mode to support discrete and MMIC applications extending from S-
through X-band operating at a supply voltage of 28V and 50V.

IV. NP15 TECHNOLOGY

Leveraging GaAs pHEMT experience, WIN has
demonstrated 0.15µm gate length AlGaN/GaN HEMTs on
SiC for Ka-band MMIC applications. The preliminary DC
characteristics are Idmax=1A/mm, maximum Gm=350mS/mm,
and threshold voltage=-3V at Vd=10V. In addition, the fT and Fig. 7. Bin map of 100% DC test for 4-in-4 design wafer plus
fmax of a 2x75µm device are 50GHz and 140GHz, respectively. finished wafer image.
Process and structure optimization are ongoing.

VII. REFERENCES
V. INTEGRATED SOURCE VIA
[1] R. S. Pengelly et al,“A Review of GaN on SiC High Electron-
In order to increase Gain at higher frequencies, WIN Mobility Power Transistors and MMICs”, IEEE Trans. On
successfully developed 30µm x 60µm oval substrate via Microwave Theory and Techniques, Vol. 60, No. 6, June, 2012.
technology to enable backside connections directly to the
internal source contact (ISV) of the transistors. The reduction


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