MBQ50T65FDSC 650V Field Stop IGBT

MBQ50T65FDSC
650V Field Stop IGBT

General Description Features

 High Speed Switching & Low Power Loss
This IGBT is produced using advanced MagnaChip’s Field
 VCE(sat) = 1.95V @ IC = 50A
Stop Trench IGBT Technology, which provides high switching
 Eoff = 0.37mJ @ TC = 25°C
series and excellent quality.
 High Input Impedance
 trr = 80ns (typ.) @diF/dt = 1000A/ μs
This device is for PFC, UPS & Inverter applications.
 Maximum junction temperature 175°C

Applications
 PFC  Welder
 UPS  IH Cooker
 PV Inverter

TO-247

G
C
E

Maximum Rating
Parameter Symbol Rating Unit
Collector-emitter voltage VCE 650 V
TC=25°C 100 A
DC collector current, limited by Tvjmax IC
TC=100°C 50 A
Pulsed collector current, tp limited by Tjvjmax ICpuls 200 A
Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C - 200 A
TC=25°C 60
Diode forward current limited by Tvjmax IF A
TC=100°C 30
Diode pulsed current, tp limited by Tvjmax IFpuls 200 A
Gate-emitter voltage VGE ±20 V
TC=25°C 273 W
Power dissipation PD
TC=100°C 136 W
Short circuit withstand time
VCC ≤ 400V, VGE = 15V, Tvj = 150°C
tsc 5 μs
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
Operating Junction temperature range Tvj -40~175 °C
Storage temperature range Tstg -55~150 °C
Soldering temperature
260 °C
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

Thermal Characteristic
Parameter Symbol Rating Unit
Thermal resistance junction-to-ambient RθJA 40
Thermal resistance junction-to-case for IGBT RθJC 0.55 °C/W
Thermal resistance junction-to-case for Diode RθJC 1.2

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 MBQ50T65FDSC 650V Field Stop IGBT
Ordering Information
Part Number Marking Temp. Range Package Packing RoHS Status
MBQ50T65FDSCTH 50T65FDSC -55~175°C TO-247 Tube Halogen Free

Electrical Characteristic (Tvj = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Static Characteristic
Collector-emitter breakdown voltage BVCES IC = 2mA, VGE = 0V 650 - - V
IC = 50A, VGE = 15V, Tvj = 25°C 1.95 2.4
Collector-emitter saturation voltage VCE(sat) V
IC = 50A, VGE = 15V, Tvj = 175°C 2.35
Tvj = 25°C 1.65 2.05
Diode forward voltage VF VGE = 0V, IF = 30A Tvj = 125°C 1.55 V
Tvj = 175°C 1.45
Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.5mA 3.8 5.0 6.2 V
VCE = 650V, Tvj = 25°C - - 40
Zero gate voltage collector current ICES μA
VGE = 0V Tvj = 175°C - - 1000
Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA
Transconductance gfs VCE = 20V, IC = 50A, 23.5 S
Dynamic Characteristic
Total gate charge Qg - 293
VCE = 520V, IC = 50A,
Gate-emitter charge Qge - 47 nC
VGE = 15V
Gate-collector charge Qgc - 160
Input capacitance Cies - 4453 -
VCE = 25V, VGE = 0V,
Reverse transfer capacitance Cres - 161 - pF
f = 1MHz
Output capacitance Coes - 238 -
Internal emitter inductance
LE - 13.0 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current
VGE = 15V, VCC = 400V,
Max. 1000 short circuits IC(SC) - 150 - A
tSC ≤ 5μs, Tvj = 150°C
Time between short circuits: ≥ 1.0s
Switching Characteristic
Turn-on delay time td(on) - 48 -
Rise time tr - 60 -
ns
Turn-off delay time td(off) VGE = 15V, VCC = 400V, - 344 -
Fall time tf IC = 50A, RG = 7Ω, - 40 -
Turn-on switching energy Eon Inductive Load, Tvj = 25°C - 1.4 -
Turn-off switching energy Eoff - 0.37 - mJ
Total switching energy Ets - 1.77 -
Reverse recovery time trr - 80 - ns
Reverse recovery current Irr - 24 - A
IF = 30A, diF/dt = 1000A/ μs,
Reverse recovery charge Qrr Tvj = 25°C - 0.9 - μC
Rate of fall of reverse recovery current
dirr/dt - -1050 - A/μs
during tb

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 MBQ50T65FDSC 650V Field Stop IGBT
Switching Characteristic
Turn-on delay time td(on) - 38 -
Rise time tr - 69 -
ns
Turn-off delay time td(off) VGE = 15V, VCC = 400V, - 366 -
Fall time tf IC = 50A, RG = 7Ω, - 33 -
Turn-on switching energy Eon Inductive Load, Tvj = 175°C - 2.1 -
Turn-off switching energy Eoff - 0.4 - mJ
Total switching energy Ets - 2.5 -
Reverse recovery time trr - 148 - ns
Reverse recovery current Irr - 42 - A
IF = 30A, diF/dt = 1000A/ μs,
Reverse recovery charge Qrr Tvj = 175°C - 3.1 - nC
Rate of fall of reverse recovery current
dirr/dt - -510 - A/μs
during tb

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 MBQ50T65FDSC 650V Field Stop IGBT
180 120
TJ = 25C 21V TJ = 175C 21V 19V 17V
19V 17V 15V 15V
160
13.0V 100
140
13.0V
Collector Current, CI [A]

Collector Current, IC [A]

120 80

100
11.0V
60 11.0V
80

60 40
9.0V
40 9.0V
20
20
VGE = 7V VGE = 7V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter Voltage VCE [V] Collector-Emitter Voltage VCE [V]

Fig.1 Typical Output Characteristics(TJ=25℃) Fig.2 Typical Output Characteristics(T J=175℃)

140 4.0
VCE = 20V VGE = 15V
TJ = 25'C
100A
Collector-Emitter Voltage, VCE [V]

120 TJ = 175'C
3.5
Collector Current, IC [A]

100
3.0

80

2.5 50A
60

2.0
40
20A
1.5
20

0 1.0
5 6 7 8 9 10 11 12 13 14 15 25 50 75 100 125 150 175

Gate-Emitter Voltage VGE [V] Junction Temperature, TJ [C]

Fig.3 Typical Transfer Characteristics Fig.4 Typical Collector-Emitter Saturation Voltage

-Junction Temperature

160 1.7

TJ = 25'C 60A
140 TJ = 175'C 1.6

120 1.5
Forward Voltage, VF [V]
Forward Current, IF [A]

100 1.4

80 1.3
30A

60 1.2

40 1.1 15A

20 1.0

0 0.9
0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175

Forward Voltage, VF[V] Junction Temperature, TJ [C]

Fig.5 Diode Forward Characteristics Fig.6 Diode Forward-Junction Temperature

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 MBQ50T65FDSC 650V Field Stop IGBT
6.0 8000
Cies VGE = 0V
5.5 f = 1MHz
Threshold Voltage, VGE(th) [V]

5.0
6000
Max.
4.5

Capacitance [pF]
Typ.
4.0
Min. 4000
3.5 Coes

3.0

2000
2.5 Cres

2.0

1.5 0
25 50 75 100 125 150 175 0 5 10 15 20 25 30
Junction Temperature, TJ [C] Collector-Emitter Voltage, VCE [V]

Fig.7 Threshold Voltage-Junction Temperature Fig.8 Typical Capacitance

16 100
VCC = 130V VCC = 400V
14 VCC = 520V VGE = 15V
RG = 7ohm
TC = 175'C
Gate-Emitter Voltage, VGE, [V]

12 80
Switching Time [nS]

10
tr
8 60

td(on)
4 40

0 20
0 50 100 150 200 250 300 10 20 30 40 50 60 70 80

Total Gate Charge, QG [nC] Collector Current, I C [A]

Fig.9 Typical Gate Charge Fig.10 Typical Turn on-Collector Current

1000 4
VCC = 400V
VGE = 15V
td(off) RG = 7.9ohm
TC = 175'C
Eon
3
Switching Loss [mJ]
Switching Time [nS]

100

tf

10 Eoff

VCC = 400V 1
VGE = 15V
RG = 7ohm
TC = 175'C

1 0
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80

Collector Current, IC [A]

Collector Current, I C [A]

Fig.11 Typical Turn off-Collector Current Fig.12 Switching Loss-Collector Current

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 MBQ50T65FDSC 650V Field Stop IGBT
70
1000
VCC = 400V VCC = 400V
VGE = 15V VGE = 15V
IC = 40A IC = 40A
TJ = 175'C TJ = 175'C
td(off)
Switching Time [nS]

Switching Time [nS]

60
td(on)

100
tr

50 tf

40 10
0 5 10 15 20 25 0 5 10 15 20 25

Gate Resistance, RG [ohm] Gate Resistance, RG [ohm]

Fig.13 Turn on Characteristics-Gate Resistance Fig.14 Turn off Characteristics-Gate Resistance

3.0 100

VCC = 400V
VCC = 400V
VGE = 15V
VGE = 15V
2.5 IC = 40A
IC = 40A
TJ = 175'C RG = 7.9ohm
Ets 80
Switching Loss [mJ]

2.0
turn on [ns]

Eon td(on)

1.5 60

tr

1.0

40
Eoff
0.5

0.0 20
0 5 10 15 20 25 25 50 75 100 125 150 175

Gate Resistance, RG [ohm] Junction Temperature, T J [C]

Fig.15 Switching Loss-Gate Resistance Fig.16 Turn on Characteristics

-Junction Temperature

1000 2.5
VCC = 400V VCC = 400V
VGE = 15V VGE = 15V
IC = 40A IC = 40A Ets
RG = 7.9ohm RG = 7.9ohm
2.0
td(off)
Switching Loss [mJ]

Eon

1.5
turn off [ns]

100

1.0
tf

Eoff
0.5

10 0.0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Junction Temperature, T J [C] Junction Temperature, TJ [C]

Fig.17 Turn off Characteristics Fig.18 Switching Loss-Junction Temperature

-Junction Temperature

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 MBQ50T65FDSC 650V Field Stop IGBT
2.0 200
TJ = 25'C
VGE = 15V
TJ = 175'C
IC = 40A
180 IF = 20A

Reverse Recovery Time, trr [ns]

RG = 7.9ohm
TJ = 175'C
1.5
160
Switching Loss [mJ]

Ets

140

1.0
Eon
120

100
0.5
Eoff
80

0.0 60
200 250 300 350 400 450 500 600 700 800 900 1000

Collector-Emitter Voltage, VCE [V] Diode Current Slope, diF/dt [A/us]

Fig.19 Switching Loss-Collector Emitter Voltage Fig.20 Reverse Recovery Time

-Diode current slope

3.5 50
TJ = 25'C
TJ = 25'C TJ = 175'C
Reverse Recovery Charge, Qrr [uC]

Reverse Recovery Current, Irr [A]

TJ = 175'C IF = 20A
3.0 IF = 20A

40

2.5

2.0 30

1.5

20

1.0

0.5 10
500 600 700 800 900 1000 500 600 700 800 900 1000

Diode Current Slope, diF/dt [A/us] Diode Current Slope, diF/dt [A/us]

Fig.21 Reverse Recovery Charge Fig.22 Reverse Recovery Current

-Diode Current Slope -Diode current slope
1000
TJ = 25'C
TJ = 175'C tp=1us
900 IF = 20A 100
Rate of fall of Irr, dirr/dt [A/us]

Collector Current,IC, [A]

800

700 10 10us

600 50us
100us
200us
500 1 500us

400
DC

300 0.1
500 600 700 800 900 1000 1 10 100 1000
Diode Current Slope, diF/dt [A] Collector-Emitter Voltage,VCE [V]

Fig.23 Rate of fall of reverse recovery current

Fig.24 Forward Bias Safe Operating Area
-Diode Current Slope

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 MBQ50T65FDSC 650V Field Stop IGBT
300 15
VCE =400V VCE = 400V
TC = 25'C TC = 150'C
Short Circuit Collector current, IC(SC) [A]

Short Circuit Withstand Time, tSC [㎲ ]

250 12

200 9

150 6

100 3

50 0
10 12 14 16 18 20 10 11 12 13 14 15

Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Fig.25 Typical Short Circuit Collector Current Fig.26 Typical Short Circuit Withstand Time

100 300

90
250
80
Power Dissipation, Ptot [A]
Collector Current, IC [A]

70
200
60

50 150

40
100
30

20
50
10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

Case Temperature, TC [C] Case Temperature, TC [C]

Fig.27 Case Temperature-Collector Current Fig.28 Power Dissipation-Case Temperature

D=0.9
D=0.9
0.5 10
0

0.5
]

]
JC

JC
Thermal Response [Z ?

Thermal Response [Z ?

-1
10
0.1
0.1
0.05 -1
10
0.05
0.02
0.02
-2
10
Notes : 0.01 Notes :
0.01 Duty Factor, D=t1/t2 Duty Factor, D=t1/t2
PEAK TJ = PDM * Z? JC* R? JC(t) + TC PEAK TJ = PDM * Z? JC* R? JC(t) + TC

-2
10
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
10 1x10 1x10 10 10 10 10 10 1x10 1x10 10 10 10 10
Rectangular Pulse width [sec] Rectangular Pulse width [sec]

Fig.29 IGBT Transient Thermal Impedance Fig.30 FRD Transient Thermal Impedance

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 MBQ50T65FDSC 650V Field Stop IGBT
Physical Dimension

TO-247
Dimensions are in millimeters, unless otherwise specified

ΦP
E A
A2

Q
S

D1
E2
D
L1

b2
b1
L

b E1

e c A1

Dimension Min(mm) Max(mm)

A 4.70 5.31
A1 2.20 2.60
A2 1.50 2.49
b 0.99 1.40
b1 2.59 3.43
b2 1.65 2.39
c 0.38 0.89
D 20.30 21.46
D1 13.08 -
E 15.45 16.26
E1 13.06 14.02
E2 4.32 5.49
e 5.45BSC
L 19.81 20.57
L1 - 4.50
ΦP 3.50 3.70
Q 5.38 6.20
S 6.15BSC

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 MBQ50T65FDSC 650V Field Stop IGBT

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

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