Subject Name : Fundamentals of Electronics Engg.

(BEC101)

ASSIGNMENT -3 (Part-I)
1. What causes majority carriers to flow at the moment when a P region and an N region are brought
together? (b) Why does this flow not continue until all the carriers have recombined?
2. Explain the formation of the 'depletion region' in an open circuited PN junction.
State what you understand by barrier potential across a PN-junction. Also explain its significance.
3. Sketch, on the same axes, V-I characteristics for germanium and silicon diodes. Label clearly the
values of knee voltage and reverse saturation current.
What do you understand by 'equivalent circuits of diode'? Draw its V-I characteristics.
4. Explain how the process of avalanche breakdown occurs in a PN-junction diode. How is it different
from zener breakdown?
5. Draw the circuit diagram of a half-wave rectifier. Explain its working. What is the minimum frequency
of ripple in its output?
6. Draw the circuit diagram of a full-wave rectifier using (a) centre-tap connection, and ( b) bridge
connection. Explain the working of each. What is the PIV in each case?

ASSIGNMENT -3 (Part- II)

7. Explain why a bridge rectifier is preferred over a centre-tap rectifier.
Prove that the ripple factor of a half-wave rectifier is 1.21 and that of a fullwave rectifier is 0.482.
8. Draw the circuit diagram of a voltage regulator circuit using a zener diode. Explain its working.

9. Determine Vo for each network of Fig. below for the input shown.

10. Sketch Vo for each network of Fig. below for the input shown.

11. Determine VL, IL , IZ , and IR for the network of Fig. below if RL= 180 ohms. Repeat if RL= 470ohms.

12. Write short notes on (a) LED (b) Varactor (c) Tunnel Diode (d) Photo Diode

Submission Date: 19-1-2024