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ABSTRACT: The use of substrate integrated waveguides (SIW) for microwave and milli-
meter wave integrated components has increased dramatically over the last decade. They
mimic the performance of conventional metallic waveguides and they are fabricated using
printed circuit boards using the top and bottom metallization with two rows of vias forming
the side walls. This creates a low profile, compact, and light weight alternative to conven-
tional metallic waveguides, and they allow a direct interconnection with printed circuit
boards and active components. This article reviews the fundamental theory, documents the
research that has been performed over the past decade, and summarizes progress up to the
recent state-of-the-art including novel SIW structures for passive circuits and antennas as
well as new applications for reconfigurable and printed circuits using SIW tech-
nology. V C 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 26:129–145, 2016.
129
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130 Sahu et al.
d2
weff 5 w2 (1)
0:95s
d2 d2
weff 5 w21:08 1 0:1 (2)
s w
Figure 1 Illustration of a SIW showing the via arrangement
that forms the side-wall of the waveguide.
where d is the diameter of the metal vias, w represents
their transverse spacing, and s represents their longitudinal
microwave resonators, antennas and filters [45–58]. Figure spacing. The effective width enables the SIWs to be ana-
2 shows the number of publications using SIWs over the lyzed as rectangular waveguide, thus reducing the design
past decade showing the cumulative annual growth. This complexity.
article summarizes the present state-of-the-art and the An improved closed form formula derived from an
applications and uses of SIW technology. analytical method was proposed in [63].
International Journal of RF and Microwave Computer-Aided Engineering/Vol. 26, No. 2, February 2016
1099047x, 2016, 2, Downloaded from https://onlinelibrary.wiley.com/doi/10.1002/mmce.20946 by Indian Institute Of Tech - Roorkee, Wiley Online Library on [27/10/2023]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
Recent Advances in SIW 131
Figure 5 (a) Substrate-integrated folded waveguide [74] and (b) half-mode SIW [75].
International Journal of RF and Microwave Computer-Aided Engineering/Vol. 26, No. 2, February 2016
1099047x, 2016, 2, Downloaded from https://onlinelibrary.wiley.com/doi/10.1002/mmce.20946 by Indian Institute Of Tech - Roorkee, Wiley Online Library on [27/10/2023]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
Recent Advances in SIW 133
Figure 6 (a) QMSIW topology [76] and (b) an equivalent infinite parallel plate waveguide (PPWG) containing the SRRs to analyze pro-
posed SIW loaded with SRRs [77].
layer substrate with a bottom layer including internal [102–104]: basic design rules and fundamental electrical
metalized via-holes connected to the conducting ground characteristics to indicate the superior performance of
plane (Fig. 7d). SIW structures are reported in [102]. Advanced design
Based on a double-layer substrate technology, these techniques such as cross-couplings realized by physical
SW-SIWs exhibit a significant slow-wave effect leading and nonphysical paths, SIW filters with dual-mode and
to a reduction in both transverse and longitudinal dimen- multimode techniques, miniaturization enabled techniques
sions and thus, a noteworthy surface miniaturization ratio. such as LTCC, wideband, and multiband filters have been
presented in [103]. In [104], the authors have summarized
a series of practical aspects and design considerations of
III. RECENT PROGRESS IN PASSIVE CIRCUITS
SIW filters. Critical aspects such as substrate selection,
SIW based filters and couplers are extensively docu- fabrication tolerance, thermal stability, and power han-
mented in the literature. Various filter topologies have dling capability are discussed in depth with suitable exam-
been proposed which include filter with an inductive post, ples. The discussion showed that substrate characteristics
with irises, and cavity filters with circular and rectangular play a crucial role on the electrical and physical perform-
cavities [7, 83, 84]. Subsequently, dual mode SIW filters ance of the SIW filters, as shown in Figure 8. The size,
[85–87], wideband SIW filters [88], multiband SIW filters insertion loss, power handling, temperature stability, and
[89–91], filters based on multilayered structures with cav- fabrication cost of an SIW filter are all related to the char-
ities [92], and compact and superwide band-pass filters acteristics of its substrate.
using electromagnetic band-gap structures [93] were Additionally, several coupler topologies have been
reported. developed in SIW. Among them, two directional couplers
With respect to passive components, the development were proposed. The first one uses two adjacent SIWs with
of bandpass filters is an essential component of a commu- a common wall on which an aperture is utilized to realize
nication system. Several attempts have been made to the coupling between two SIWs working in TW10 mode.
design filters with SIWs exhibiting a desired passband This topology was used to design and fabricate 3, 6, and
and high rejection level in the stopband. Table I presents 10-dB couplers [105]. The second configuration presents a
a qualitative comparison of recently published bandpass cruciform shape, and was adopted to design a supercom-
filters in SIW technology. In addition to these bandpass pact 3-dB directional coupler [106]. An efficient design
filters, several other topologies including introduction of technique for accurate design of wideband couplers was
complementary split-ring resonators (CSRRs) and com- proposed in [107]. In this design, the even mode propaga-
posite right-left handed (CRLH) transmission line [16, tion constant for tapered slot section was first accurately
17], a triple mode filter on quarter-mode SIW [97], balun extracted with the help of numerical thru-reflect-line cali-
filters based on SIW technology [98, 99], and filters with bration method. Then, it was fitted into the model of a
controllable electric and magnetic coupling [100, 101] dielectric filled rectangular waveguide and thereafter
were reported. extrapolated to the operation range of odd-mode. Based
Very recently, a series of three papers summarizing the on the extraction of the equivalent circuit models of
various filter topologies, design considerations and pra- the waveguide bifurcation effects along with parametric
ctical aspects of SIW filters, have been published in values, a 908 3-dB coupler was developed to validate the
International Journal of RF and Microwave Computer-Aided Engineering/Vol. 26, No. 2, February 2016
1099047x, 2016, 2, Downloaded from https://onlinelibrary.wiley.com/doi/10.1002/mmce.20946 by Indian Institute Of Tech - Roorkee, Wiley Online Library on [27/10/2023]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
Recent Advances in SIW 135
problem, two X-band oscillators using rectangular cavity Another Gunn oscillator design based on HMSIW was
were reported in [121]. In that work, the oscillators were reported in [123]. The circuit was composed of a Gunn
designed by harmonic balance simulation, where the S- diode, resonant cavity, direct current power supply circuit
parameters of the cavities were imported from an electro- and a transition of HMSIW to microstrip. The HMSIW
magnetic simulation. A new technique based on self- cavity acts both as a tuned resonant circuit and an energy
compensation of the resonant frequency of SIW cavities coupling device of GUNN diode, coupling energy from
was applied to the oscillator design in [122], in which a cavity to transmission line. A single-layer cavity backed
nominal ratio of thermal expansion and permittivity coef- antenna oscillator was implemented in [124]. The active
ficients was defined to generate temperature compensa- circuit and radiator were placed on the opposite side of
tion. In that work, a cavity of specific substrate was the substrate and within the cavity area allowing a com-
designed, measured and compared to cavities realized on pact configuration with 11.87–12.36 GHz tuning range
other substrates. Finally, the cavity was integrated with an and phase noise better than 2107 dBc/GHz. A push-push
amplifier to build an oscillator which showed a stability and push-pull oscillator (Fig. 10a) based on SIW and sub-
of 2 ppm/8C in the temperature range of 240 to 808 C. strate integrated coaxial line (SICL) was presented in
Figure 8 The relationship between SIW filter and its substrate characteristics [104].
International Journal of RF and Microwave Computer-Aided Engineering/Vol. 26, No. 2, February 2016
1099047x, 2016, 2, Downloaded from https://onlinelibrary.wiley.com/doi/10.1002/mmce.20946 by Indian Institute Of Tech - Roorkee, Wiley Online Library on [27/10/2023]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
Recent Advances in SIW 137
Figure 11 Layout for (a) switchable SIW [133] and (b) geometry of a ferrite loaded SIW section [134].
tuned, thereby making the SIW mode cut-off frequency surface wave loss, which reduces the limitation of thin
change, to enable the switching function. This switch had substrates. These merits make SIW a better candidate for
a 1.1 GHz bandwidth centered at 1.1 GHz with an inser- antenna design. In this section, we will focus on the
tion loss less than 1 dB in the on state and an isolation of recent advancements for several SIW antennas.
20 dB in the off state. The design and implementation of
a SIW SPDT switch for X–band applications was pre- A. Slotted Antennas
sented in [135]. Inductive posts with rectangular slots In this technique, the radiation in SIW antennas is
were embedded in the SIW to control the travelling EM obtained by etching slots in the top metal surface of the
wave. By adding pin diodes on the top slots of inductive SIW structure (Fig. 12a). The first slotted SIW antenna
posts, the SPDT switch achieved isolation (S31) greater was based on a four-by-four slotted SIW array operating
than 10 dB, (S32) greater than 15 dB and an insertion loss at 10 GHz [23]. Recently, many topologies of SIW slot
less than 2.55 dB in 8.24–10.36 GHz band. antennas have been proposed for back lobe suppression. A
SIW slot antenna array based on comb-shaped chokes of
an array of quarter-wavelength short-end parallel micro-
V. SIW ANTENNAS strip lines at the bottom surface of array was reported for
The development of millimeter wave technologies has led lowering the backward radiation by 10-dB [24]. A SIW
to a growing interest in SIW antennas. Several early slot antenna with folded corrugated stubs was proposed in
developed antenna topologies have been discussed in [11]. [25] for suppressing the back lobes. Bandwidth broaden-
SIW based antennas offer advantages similar to microstrip ing of SIW slot antenna was reported in [26]. The work
antennas as they can be fabricated with the same planar proposed the use of two unequal slots to increase the
printed technology. Furthermore, SIW as a waveguide bandwidth up to twice of standard slot antennas. Two
structure, does not suffer from unintentional radiation and design methods for SIW travelling wave slot antennas and
Figure 12 Layout for (a) Slotted SIW, (b) leaky-wave SIW, (c) cavity backed SIW, and (d) conformal SIW [44].
planar slotted array antennas were also reported in [27, grates cavity backed SIW and triangular slot (TLS), where
28]. Both design methods are based on the method of the dual mode of TLS is achieved by simultaneously
least squares and Elliot’s design formulas using the con- exciting the mode of the slot and the mode of the patch
cept of equivalent waveguide to formulate the error func- inside the slot; the other one uses a dumbbell shaped slot
tion. Using the concept of hollow SIW, a slotted along with thin SIW cavity backing. The SIW-slot feeding
waveguide antenna array was designed in [29]. Using structure is introduced in a fully substrate-integrated thin
classical log-periodic theory, SIW slot antennas with Fabry–Perot cavity (FPC) antenna to achieve low back-
broadband performance were presented in [30]. Based on ward radiation levels [37].
the orientation of the slots a transverse SIW slot antenna
and a longitudinal SIW slot antenna were designed and D. Conformal Antennas
results indicated a much wider impedance bandwidth as A significant effort has been devoted very recently to the
compared to traditional slotted waveguide antennas. development of conformal SIW antennas. There are a few
concerns regarding analysis of the SIW conformal anten-
B. Leaky-Wave SIW Antennas nas and it requires the synthesis of planar antenna to be
In the SIW leaky-wave antennas, the radiation is obtained carried over to conformal antennas. Unless a systematic
by increasing the longitudinal spacing s of the side wall analysis method is developed to study the effect of con-
metal vias, as shown in Figure 12b.Two leaky wave formal shape on the properties of antenna, it is impossible
antennas based on CLRH SIW were presented in [38, 39]. to achieve satisfactory performance or special shaped
In [38] a double periodic CLRH SIW is proposed and the beam requirements with conformal antennas because the
equivalent circuit, the dispersion behavior and the expres- curved shape of the conformal antenna determines its
sion for cut-off frequencies were studied. Two SIW leaky characteristics to a great extent [44]. However, some
wave antennas composed of periodic set of transverse attempts have been made to come up with accurate syn-
slots were proposed by Long and coworkers [40, 41]. thesis design for SIW conformal antennas. A 35 GHz slot
Such structures were found to support three kinds of array antenna conforming to a prescribed curved surface
modes (a leaky mode, proper waveguide mode, and a with shaped-beam was investigated in [44], which had
surface-wave-like mode). Furthermore, a SIW leaky wave low side lobe level in H-plane and a flat-topped fan-beam
antenna with tapered transverse slots on top and bottom in E-plane (Fig. 12d). A conformal coplanar feed network
sides was proposed by the same group for investigation of was designed for the desired excitation. The structure had
end-fire radiation with a narrow beam and side lobe sup- a 227.4 dB side lobe level beam in H-plane, and a flat-
pression [42]. The synthesis of one dimensional SIW- topped fan beam with 2388–378 3-dB beam width in E-
leaky wave antennas with modulated geometry was pre- plane, along with a cross-polarization lower than 241.7
sented in [43] using holographic concepts; its synthesis dB at the beam direction. Subsequently, a travelling wave
technique demonstrated the capability of flexibly tailoring slot array on a CSIW at K-band was presented in [136].
the radiated field’s pattern, both in near and far-field A 16 element longitudinal slot array on the broad wall of
regime. CSIW was designed using Elliot’s procedure. For the
structure, about 108 beam steering is achieved when the
C. Cavity Backed Antennas frequency is swept from 24 to 26 GHz with an antenna
Generally, there are two categories of SIW cavity backed gain of 14 dB. The capability to conform a substrate inte-
antennas: SIW cavity backed patch antenna (Fig. 12c) and grated leaky wave antenna along an arbitrarily curved line
SIW cavity backed slot antenna. Numerous SIW cavity by suitably tapering the leaky mode along the antenna
backed antennas, with different configurations, different length was demonstrated in [137]. It was shown that, by
feeding structures, and different performances have been means of locally adjusting the pointing angle of the radi-
developed by researchers around the globe. In 2013, Dr. ated wave, a coherent plane waveform at the far-field
X. H. Zhang and coworkers. reviewed SIW cavity anten- region can be obtained. A conformal wideband SIW H-
nas [31]. Thereafter, some new topologies have also been plane horn antenna was presented in [138].
introduced to this area. A wideband SIW cavity backed
antenna was proposed in [32]. To enhance the bandwidth E. Active Antennas
and radiation efficiency, the cavity was designed to reso- The term active antenna here refers to “circuit–antenna
nate at its TE210 mode. Another broadband SIW cavity module” and hence it includes active integrated antennas,
backed antenna was introduced in [33], where the broad- where an active device is integrated in the same substrate
band performance is achieved by introducing a bow-tie- with the radiating antenna structure. In addition, it
shaped slot instead of a conventional rectangular slot. A includes antenna elements where an active device is used
SIW-fed circularly polarized antenna array with a broad to modify or reconfigure the properties of the antenna
axial-ratio bandwidth was proposed in [34]. The antenna such as beam direction, polarization or bandwidth [11].
array consisted of 16 sequentially rotated elliptical cavities Compact, single-substrate cavity-backed slot and patch
fed by slots on the SIW acting as radiating elements, four oscillator antennas were proposed in [45, 139], where a
1-to-4 SIW power dividers, and a transition from a square cavity was used along with antenna and the feed-
coaxial cable to SIW. Two dual band SIW cavity backed ing networks, etched on the top and bottom layers respec-
antennas were introduced in [35, 36]: the first one, inte- tively. Furthermore, a tunable oscillator was presented in
International Journal of RF and Microwave Computer-Aided Engineering/Vol. 26, No. 2, February 2016
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Recent Advances in SIW 139
Figure 13 Demonstration of SoS (a) 24-GHz FMCW radar front end [128] and (b) 60-GHz multichip module receiver [142].
[46] by removing one via hole from the cavity wall and GaAs varactor was proposed in [53]. A 2.6–3.1 GHz tuna-
introducing a varactor diode in its place. ble band was obtained with a Qu between 180 and 70, a
Significant focus has been placed on design of frequency capacitance variation between 0.25 and 1.25 pF. An ultra-
reconfigurable SIW antennas. A frequency reconfigurable wideband two-port resonator based on CSRR and varactor
antenna based on HMSIW was presented in [47]. Its reso- based SIW was presented in [54]. The resonant frequency
nant frequency was electronically controlled by a varactor- was varied between 0.83 and 1.58 GHz and has a wide
loaded interdigital capacitor on the top plate of HMSIW tuning ratio of 90%. Subsequently, electrically tunable
and the bias network was designed on the bottom plate. A evanescent mode HMSIW resonators were presented [55];
reconfigurable SIW cavity-based antenna was presented in HMSIW loaded with CSRRs where a variable capacitor
[48] by loading the SIW cavity with shorting posts and connected to one of the conductors of CSRR changes its
manipulating the field distribution within the cavity. The effective capacitance with respect to ground, resulting in
frequency shift was controlled by the number of posts and frequency tuning of the resonator. A novel approach for
their location. Using this technique a frequency tuning ratio providing SIW tunable resonators by means of placing an
as high as an octave (1.1–2.2 GHz) was achieved. A fre- additional metalized via-hole on the waveguide cavity was
quency reconfigurable SIW interdigital capacitor antenna on presented in [56]. The via hole contains an open loop slot
a composite right/left handed (CRLH) resonator was pre- on the top metallic wall. The tuning range was defined by
sented in [49]. A varactor diode was embedded on the inter- the dimension, position and orientation of the open-loop
digital slot of the short-ended SIW, whose zeroth-order slot.
resonance varied from 4.13 to 4.50 GHz by changing the A novel tunable second-order filter was implemented
bias voltage from 0 to 36 V. A varactor loaded CSRR was on three-layer Rogers RT/Duroid substrate using p-i-n
used to design a compact eighth-mode SIW antenna [50] diode switching elements [57]; the filter provided six
operating in dual band. A broadband frequency tuning was states ranging from 1.55 to 2 GHz (25% tuning). A two
achieved in a ferrite loaded SIW antennas by simultane- pole filter has been demonstrated on a low–cost substrate
ously changing the location of ferrite slabs in the antennas showing a tunable center frequency between 2.64 and
(mechanical tuning) and bias magnetic fields (magnetical 2.88 GHz with 1.27–3.63-dB insertion loss across the tun-
tuning) [53]. ing range [58]. Tuning a SIW cavity by embedding a fre-
quency agile material into an SIW cavity was presented in
VI. RECONFIGURABILITY WITH SIW
[140]. A specific switchable post constructed using plasma
(argon) was introduced in the SIW cavity. A compact tun-
Reconfigurable components are essential for millimeter-
able filter integrated in ferroelectric ceramic substrate was
wave multifunctional radio and radar systems, such as
reported [141] based on an evanescent-mode dielectric
smart and cognitive radio and radar techniques for better
cavity loaded by a pair of tunable-mushroom-type com-
use of the electromagnetic spectrum as they facilitate the
plementary split-ring resonators.
simplification of multiband and wideband wireless sys-
tems architecture [99]. These techniques can eliminate
interference while preserving good signal receiving condi- VII. SYSTEM ON SUBSTRATE
tion. Through a dynamical reconfiguration of operational The use of microstrip or coplanar waveguides is conven-
frequency and bandwidth, tunable resonators efficiently ient for frequencies below 30 GHz, but these techniques
cope with time and regional variation of traffic demands. become impractical at high frequencies due to the
Hence, they are crucial building blocks for design and incurred losses. The previous sections highlighted the pos-
realization of tunable RF and microwave components. sibility of SIW technology in the development of various
One of the preliminary tuning solutions was proposed in active and passive components. These possibilities provide
[52] based on the insertion of vertical capacitive posts opportunities for design of SoS, where all the components
integrated within SIW cavities. Further, a low-loss tunable not included in chip-set are fabricated using SIW technol-
resonator based on combline-SIW cavity loaded with ogy. Two methodologies have been reported for the
International Journal of RF and Microwave Computer-Aided Engineering/Vol. 26, No. 2, February 2016
1099047x, 2016, 2, Downloaded from https://onlinelibrary.wiley.com/doi/10.1002/mmce.20946 by Indian Institute Of Tech - Roorkee, Wiley Online Library on [27/10/2023]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
Recent Advances in SIW 141
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been presented. strate integrated power dividers, Canadian Conf Electr Com-
put Eng, May 4–7, 2003, 1921–1924.
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BIOGRAPHIES
IETE Sir J. C. Bose best application paper award (1999) and Shri
Abhishek Sahu was born in India in 1990. Hari Ohm Ashram Prerit Hariballabha Das Chunilal Research
He received the B.Tech degree in ECE Endowment Award (2000), Samanta Chandra Sekhar Award in
from BPUT, India, in 2012. In 2013, he Engineering and Technology (2008), which is the highest award by
joined the EECS Department at the Univer- the Govt. of Orissa. He had organized short courses on ANN appli-
sity of Toledo, where is currently working cations for Microwave and Antennas. He is a reviewer for the IEEE
towards his Ph.D. degree in electrical engi- Transactions on Antennas and Propagation.
neering. His present research interests are
applied electromagnetics, mm-wave com- Peter H. Aaen received the B.A.Sc.
ponents design and microwave measure- degree in Engineering Science and the
ment techniques. Mr. Sahu is the recipient of the Best Student Paper M.A.Sc. degree in Electrical Engineering,
Award at the Applied Electromagnetic Conference, India, 2011. both from the University of Toronto,
Toronto, ON., Canada, and the Ph.D.
Vijay Devabhaktuni received the B.Eng. degree in Electrical Engineering from Ari-
degree in EEE and the M.Sc. degree in zona State University, Tempe, AZ., USA,
Physics from BITS, Pilani, in 1996, and in 1995, 1997 and 2005, respectively. He
the Ph.D. in Electronics from Carleton joined the Faculty of Engineering and
University, Canada, in 2003. During Physical Sciences at the University of Surrey in 2013, where he is a
2005-2008, he held the prestigious Canada Reader in Microwave Semiconductor Device Modeling. Before
Research Chair in Computer-Aided High- joining the University of Surrey, he was the Manager of the RF
Frequency Modeling and Design at Con- Modeling and Measurement Technology team of the RF Division
cordia University. In 2008, he joined the of Freescale Semiconductor, Inc, Tempe, AZ, USA; a company
EECS Department at the University of Toledo, where he is a Pro- which he joined in 1997 (then Motorola Inc. Semiconductor Prod-
fessor and Director of Interdisciplinary Research Initiatives. His uct Sector). His areas of expertise include calibration techniques for
interests are applied electromagnetics, computer aided design, microwave measurements, development of package modeling tech-
device modeling, neural networks, and RF/microwave optimization. niques, development of passive and active compact models for the
He secured external funding close to $5M (sponsoring agencies design of microwave power transistors and ICs, and efficient elec-
include AFOSR, CFI, ODOT, NASA, NSERC, NSF, and industry). tromagnetic simulation and optimization methodologies for com-
He co-authored around 190 peer-reviewed papers and is advising plex packaged environments. His current work focuses on the
13 MS/PhD students. He has won teaching excellence awards in development and validation of multi-physics based modeling meth-
Canada and USA. Dr. Devabhaktuni is the Associate Editor of the odologies for high-power and high-frequency electronic devices.
International Journal of RF and Microwave Computer-Aided Engi- He is a Senior Member of the IEEE, a member of the Microwave
neering. He is a Senior Member of the IEEE. Theory and Techniques Society, and is an active member of many
technical committees including: MTT-1 Computer-Aided Design,
Rabindra Kishore Mishra is a professor technical program committee (TPC) of the IEEE Conference on
in the Electronic Science Department of Electrical Performance of Electronic Packaging and Systems, and
the Berhampur University since 2007. He the IMS TPRC sub-committee for CAD Algorithms and Techni-
has researched extensively in the areas of ques. Most recently he served the ARFTG community as the Tech-
planar antennas and applications of soft- nical Program Chair for the 78th and 82nd Symposiums and is the
computing techniques for analysis and e-Publicity chair for the ARFTG Executive Committee. Dr. Aaen
design of planar antennas. He visited the co-authored Modeling and Characterization of RF and Microwave
University of Birmingham as a British Power FETs (Cambridge University Press, 2007) and has authored
Commonwealth Fellow during 1999– over forty papers, articles and workshops in the fields of electro-
2000. He has supervised 14 doctoral theses, published two mono- magnetic simulation, package modeling, and microwave device
graphs and over 150 learned articles in journals of repute and pro- modeling and characterization
ceedings of conferences, seminars, and so on, which earned him