MCC56-16io1B

Thyristor Module VRRM = 2x 1600 V

I TAV = 60 A
VT = 1.24 V

Phase leg

Part number

MCC56-16io1B

Backside: isolated

3 1 2
6 7 5 4

Features / Advantages: Applications: Package: TO-240AA

● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Isolation Voltage: 4800 V~
● Planar passivated chip ● Softstart AC motor control ● Industry standard outline
● Long-term stability ● DC Motor control ● RoHS compliant
● Direct Copper Bonded Al2O3-ceramic ● Power converter ● Soldering pins for PCB mounting
● AC power control ● Base plate: DCB ceramic
● Lighting and temperature control ● Reduced weight
● Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c

© 2020 IXYS all rights reserved

 MCC56-16io1B

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1700 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V
I R/D reverse current, drain current VR/D = 1600 V TVJ = 25°C 200 µA
VR/D = 1600 V TVJ = 125°C 5 mA
VT forward voltage drop I T = 100 A TVJ = 25°C 1.26 V
I T = 200 A 1.57 V
I T = 100 A TVJ = 125 °C 1.24 V
I T = 200 A 1.62 V
I TAV average forward current TC = 85 °C T VJ = 125 °C 60 A
I T(RMS) RMS forward current 180° sine 94 A
VT0 threshold voltage TVJ = 125 °C 0.85 V
for power loss calculation only
rT slope resistance 3.7 mΩ
R thJC thermal resistance junction to case 0.45 K/W
RthCH thermal resistance case to heatsink 0.2 K/W
Ptot total power dissipation TC = 25°C 222 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 1.50 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.62 kA
t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.28 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.38 kA
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 11.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 10.9 kA²s
t = 10 ms; (50 Hz), sine TVJ = 125 °C 8.13 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 7.87 kA²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 74 pF
PGM max. gate power dissipation t P = 30 µs T C = 125 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 150 A 150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 60 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 125°C 1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 V
TVJ = -40 °C 1.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA
TVJ = -40 °C 200 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 125°C 0.2 V
I GD gate non-trigger current 10 mA
IL latching current tp = 10 µs TVJ = 25 °C 450 mA
IG = 0.45 A; di G /dt = 0.45 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.45 A; di G /dt = 0.45 A/µs
tq turn-off time VR = 100 V; I T = 150A; V = ⅔ VDRM TVJ =100 °C 150 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c

© 2020 IXYS all rights reserved

 MCC56-16io1B

Package TO-240AA Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 200 A
TVJ virtual junction temperature -40 125 °C
T op operation temperature -40 100 °C
Tstg storage temperature -40 125 °C
Weight 81 g
MD mounting torque 2.5 4 Nm
MT terminal torque 2.5 4 Nm
d Spp/App terminal to terminal 13.0 9.7 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 16.0 16.0 mm
VISOL isolation voltage t = 1 second 4800 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 4000 V

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard MCC56-16io1B MCC56-16io1B Box 36 452769

Similar Part Package Voltage class

MCMA65P1600TA TO-240AA-1B 1600
MCMA85P1600TA TO-240AA-1B 1600

Equivalent Circuits for Simulation * on die level T VJ = 125°C

I V0 R0 Thyristor

V 0 max threshold voltage 0.85 V

R0 max slope resistance * 2.5 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c

© 2020 IXYS all rights reserved

 MCC56-16io1B

Outlines TO-240AA

3 1 2
6 7 5 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c

© 2020 IXYS all rights reserved

 MCC56-16io1B

Thyristor
1400 105 VR = 0 V
120
ITSM = 50 Hz
IFSM = 80% VRRM DC
1200 100 180 ° sin
120 °
60 °
1000 30 °
80
ITSM I2dt
800 TVJ = 45°C
ITAVM
104 60
600 [A]
[A] TVJ = 45°C [A2s] TVJ = 125°C
40
400
TVJ = 125°C
200 20

0 103 0
0.01 0.1 1 1 10 0 25 50 75 100 125 150
t [s] t [ms] TC [°C]
Fig. 1 Surge overload current ITSM, 2
Fig. 2 I t versus time (1-10 ms) Fig. 3 Max. forward current
IFSM: Crest value, t: duration at case temperature

120 10
1: IGT, TVJ = 125°C
RthKA K/W
2: IGT, TVJ = 25°C
0.8 3: IGT, TVJ = -40°C
100 1
1.2
1.5
5 6
80 2
2.5
Ptot 3 VG 4
3
2
60 4 1
DC
[W] 180 ° sin [V] 1

120 °
40
60 °
30 °

20 4: PGAV = 0.5 W
IGD , T4 = 125°C 5: PGM = 5 W
6: PGM = 10 W
0 0.1
0 20 40 60 80 0 25 50 75 100 125 150 100 101 102 103 104
ITAVM [A] Ta [°C] IG [mA]

Fig. 4 Power dissipation vs. on-state current & ambient temperature Fig. 5 Gate trigger characteristics
(per thyristor or diode)

500 100
RthKA K/W TVJ = 25°C

0.1
400 0.15
Circuit 0.2
B6 0.25
3x MCC56 or 0.3 10
Ptot 300 3x MCD56 0.4
0.5 tgd
0.6
[W]
200 [µs] limit

1
typ.

100

0 0.1
0 40 80 120 160 0 25 50 75 100 125 150 0.01 0.1 1 10
IdAVM [A] Ta [°C] IG [A]

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct Fig. 7 Gate trigger delay time
output current and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c

© 2020 IXYS all rights reserved

 MCC56-16io1B

Thyristor

Circuit RthKA K/W

500 W3
3x MCC56 or 0.1
3x MCD56 0.15
400 0.2
0.25
0.3
300 0.4
Ptot 0.5
0.6

[W] 200

100

0
0 20 40 60 80 100 120 0 25 50 75 100 125 150
IRMS [A] Ta [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature

0.6
RthJC for various conduction angles d:
0.5
d RthJC [K/W]
DC 0.450
0.4
ZthJC 30° 180° 0.470
60° 120° 0.490
120° 60° 0.505
0.3
180°
DC
30° 0.520
[K/W]
0.2
Constants for ZthJC calculation:

0.1 i Rthi [K/W] ti [s]

1 0.014 0.0150
2 0.026 0.0095
0.0
10-2 10-1 100 101 3 0.410 0.1750
t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

0.8
RthJK for various conduction angles d:

d RthJK [K/W]
30°
0.6 DC 0.650
60°
120°
180° 0.670
180° 120° 0.690
DC 60° 0.705
ZthJK 0.4 30° 0.720

Constants for ZthJK calculation:

[K/W]
0.2 i Rthi [K/W] ti [s]
1 0.014 0.0150
2 0.026 0.0095
3 0.410 0.1750
0.0 4 0.200 0.6700
10-2 10-1 100 101
t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c

© 2020 IXYS all rights reserved