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Chapter 2
• What is nanotechnology?
2
Length Scales in Materials Science
https://msestudent.com/what-is-materials-science-and-engineering-the-definitive-explanation/ 3
Why do We Care about Structure?
https://mse.utoronto.ca/current/graduate/meng-projects/ 4
Why do We Care about Structure?
Experimental
strengths are much
lower because of
defects!
5
Why do We Care about Structure?
6
Structure, Length Scales, and Engineering
7
Structure, Length Scales, and Engineering
8
Structure, Length Scales, and Engineering
9
Structure
http://www.enotes.com/homework-help/atomic-number-tells-number-positively-charged-539616 10
Example
Calculate the number of atoms in 100 g of silver.
The atomic mass of silver is 107.868 g/mol
(Appendix A)
11
The Electronic Structure of the Atom
Electronegativity describes the
tendency of atom to gain an electron to
achieve a valence of zero.
vs.
12
The Periodic Table
• Atomic number = number of protons in
nucleus
• Atomic mass = mass of protons +
neutrons in atom
13
Trends in the Periodic Table
https://en.wikipedia.org/wiki/
Periodic_trends 14
Atomic Bonds
• Three types of Metallic Covalent Ionic
primary bonds
16
Materials with Metallic Bonds
• Metals
• Strong bonds
• Large elastic modulus
• Relatively high strength
• Highly ductile
• Relatively high melting points
• Good electrical conductivity
• Good heat conductors
• Often prone to corrosion/oxidation
17
Materials with Covalent Bonds
• Ceramics (and one type of bond in polymers)
• Very strong bonds
• Very large elastic modulus
• High strength
• Very low ductility (“brittle”)
• Very high melting points
• Low electrical conductivity
• Typically poor heat conductors
• High temperatures needed for processing
18
Materials with Ionic Bonds
• Form when one atom donates
valence electrons to another atom
• Ceramics
• Very strong bonds
• Relatively high strength
• Very low ductility (“brittle”)
• Relatively high melting points
• Low electrical conductivity but can
be ionic conductors
19
Covalent vs. Ionic Bonds
https://youtu.be/NgD9yHSJ29I?t=7 20
Van der Waals (Secondary) Bonding
• Arise from quantum mechanical effects
– Electric dipoles form
– Atoms/molecules with a “dipole moment” attract each other
• 3 types:
– London forces (between 2 induced dipoles)
– Debye interaction (between induced & permanent dipole)
– Keesom interactions/hydrogen bonding (between 2
permanent dipoles)
21
Van der Waals - Examples
https://youtu.be/x8PpLlKI2yo?t=10 22
Atomic Spacing, Interatomic Forces, Elastic Modulus
dE
F
dr
dF
K
da
23
Linear Elastic Deformation
• Range of strain in which deformation is reversible and stress & strain are
proportional
Hooke’s law
E
E: elastic modulus or
Young’s modulus (GPa or psi)
24
Binding Energy vs. Properties
• Melting Temperature
• Coefficient of Thermal Expansion
r
o
Energy
Eo
Eo
http://www.mtarr.co.uk/courses/topics/0197_cte/index.html 25
Binding Energy vs. Coefficient of Thermal
Expansion (CTE)
26
Polymorphism (Allotropes)
Diamond Graphite
27
Have you ever wondered?
What is nanotechnology?
28
Have you ever wondered?
Why is carbon in the form of diamond one of the hardest materials known,
whereas carbon in the form of graphite is very soft and can be used as a solid
lubricant?
29
Have you ever wondered?
How is silica, which is the main component of sand, used to make optical
fibers?
30
The Science and Engineering of Materials, SI, 7e Askeland/Wright
Chapter 1
Introduction to
Materials Science and
Engineering
Chapter Outline
Sections
1-1 What is Materials Science and Engineering?
1-2 Classification of Materials
1-3 Functional Classification of Materials
1-4 Classification of Materials Based on Structure
1-5 Environmental and Other Effects
1-6 Materials Design and Selection
Useful Video
Material Classifications: Metals, Ceramics, Polymers and Composites
https://www.youtube.com/watch?v=IPbwBOsKZ7E (youtube.com)
16
Composites
• e.g., concrete, plywood, fiberglass, abalone shell,
plants, teeth
• Formed from two or more materials (or phases),
producing properties not found in a single material
• Can be combinations of lightweight, strong, ductile,
temperature-resistant, shock-resistant, hard
• Aerospace applications, sports equipment, load-
bearing applications, multifunctional applications
17
Mechanical Properties of Materials
18
The Science and Engineering of Materials, SI, 7e Askeland/Wright
Summary
Summary
Material structure refers to atom/ion
arrangement.
Summary
27
© 2016 Cengage Learning Engineering. All Rights Reserved.
The Science and Engineering of Materials, SI, 7e Askeland/Wright
Summary
Summary
29
© 2016 Cengage Learning Engineering. All Rights Reserved.
The Science and Engineering of Materials, SI, 7e Askeland/Wright
Summary
Summary
31
© 2016 Cengage Learning Engineering. All Rights Reserved.
Have you ever wondered? Chapter 4
• Why do silicon crystals for semiconductor wafers contain trace
“dopants”, e.g., P & B?
• What makes steel considerably harder and stronger than pure
Fe?
• Why do we use high-purity Cu as a conductor in electrical
applications?
• Why do FCC metals tend to be more ductile than BCC and HCP
metals?
• How can metals be strengthened?
Theoretical vs. Experimental Strength
Experimental
strengths are much
lower because of
defects!
3
Types of Imperfections
• Substitutional atoms
• Interstitial atoms
• Vacancy atoms
• Dislocations
• Grain Boundaries
• Crack, voids
4
Point Defects (0D)
• Point defects are localized disruptions in otherwise perfect atomic/ionic
arrangements in a crystal structure.
‒ Effects of these disruptions are often felt over the surrounding region.
5
Point Defects (0D)
6
Vacancies
• A vacancy (found in all crystalline materials) is
produced when an atom/ion is missing from its
normal site in the crystal structure.
• Vacancies increase entropy, and thus increase the
thermodynamic stability of crystalline materials.
• Vacancies are key in determining how quickly atoms/ion diffuse
(move around) in a solid material.
• The vacancy concentration in a material follows an Arrhenius type
behavior:
7
Interstitials
• An interstitial defect is formed when an extra
atom/ion is inserted into the crystal structure at a
normally unoccupied position.
– Can be impurities or intentionally introduced.
• Distorts the surrounding lattice, thus generating
localized stresses and strains.
– See Example 4-3 in the textbook.
• This induced stress often strengthens the material.
8
Equilibrium Concentration of Point Defects
• Equilibrium concentration varies with temperature!
10
Computation of Equilibrium Vacancy
Concentration
11
Substitutional Defects
• A substitutional defect is formed when one
lattice atom/ion is replaced by a different
atom/ion.
‒ Can be impurities or intentionally
introduced.
• Substitutional atoms have different sizes
from their host atoms and thus distort the
surrounding lattice.
‒ This induced stress often strengthens the
material.
12
Solid Solution Strengthening
Cu alloys
13
Frenkel and Schottky defects
http://www.mrl.ucsb.edu/~edkramer/LectureVGsMat100B/99Lecture11VGs/DislocationBurgersVector.jpg
17
Dislocations (1D) – Screw Dislocations
SiC
Dislocation line
19
Mixed Dislocations
20
Observations of Dislocations
Surface Etching TEM
https://youtu.be/EXbiEopDJ_g 21
Slip
• Plastic deformation of crystalline materials usually
occurs by slip: the sliding of planes of atoms over
another, mediated by dislocation motion.
• Slip occurs on certain planes: slip planes, and in
certain directions: slip directions
– Usually closed packed planes and directions
– As a result, the flow stresses of crystals are
highly anisotropic
– Slip Plane: the plane which contains both the
dislocation line and the Burgers vector
https://www.youtube.com/watch?v=aA24ZVKL2YM 22
Dislocation Motion - Slip
FCC BCC
HCP
25
Other Factors that Influence Slip
• Dislocations do not easily move in materials with
covalent/directional bonds (brittle)
• Dislocations play almost no role in the deformation
of polymers
• Materials with ionic bonding are also resistant to
slip because dislocation movement disrupts charge
balance between cations & anions.
26
Stress and Strain
A0
F
Engineering stress S
A0
L
Engineering strain e
L0
27
Stresses Required for Slip
For slip (Peierls-Nabarro stress):
kd
c exp
b
: shear stress
c, k : constants
d : interplanar spacing between adjacent slip planes
b :magnitude of Burgers vector
Edge Dislocation Screw Dislocation
https://youtu.be/HoRvTnsiaE8?t=123 28
Slip Geometry
We need to specify the orientation of the load with respect to that of the
slip planes and directions in the crystal
slip plane P
normal Ao
29
Stress Required for Slip: Schmid’s Law
A0
A
cos
Fr F cos
Fr F cos F
r cos cos r cos cos
A A0 A0
cos Note: λ+ϕ does not (usually) equal 90º 30
Schmid’s Law
A metal flows plastically when the resolved shear stress
acting in the plane and along the direction of slip reaches
a critical value:
31
Example 4-9
32
Example 4-9
33
The Role of Crystal Structure on Plastic Flow
• Schmid’s law can be used to compare when plastic flow occurs in “nearly perfect”
single crystals.
• However, we usually have more complicated defect structures and polycrystalline
materials.
• But, we can still gain some insight.
– For instance, FCC metals have close-packed planes, so the critical resolved shear
stress is relatively low.
– BCC metals have no close-packed planes, so we need a much larger stress to
cause slip.
• Thus, BCC metals tend to have higher strength but lower ductility than FCC
metals.
– HCP metals have only 3 close-packed slip systems (and cannot “cross-slip”) so
they tend to be relatively brittle. 34
Interfacial / Surface / Planar Defects
35
How do Grain Boundaries Affect Properties?
ABCABCABC . . . becomes
ABCACABC
Small-Angle Grain Boundary (Tilt) Twin Boundary
37
Stacking Faults
FCC
The Importance of Defects
• Defects play an important role in controlling the mechanical properties of
materials (generally metals) by interfering with slip and strengthening the
material.
• Defects have less of an effect on the properties of ceramics, which are
dictated more by porosity
• Defects have less of an effect on the properties of polymers, which are
amorphous, and in which deformation primarily involves stretching,
rotation, and disentanglement of long chains.
39
The Importance of Defects
• Strain hardening is the process of strengthening a material by deforming it,
which increases dislocation density.
• The effects of strain hardening can be reversed by heat treatment/annealing,
which decreases dislocation density and increases ductility.
• Solid-solution strengthening takes place when atoms/ions of a guest material
are incorporated into a host crystal structure.
• Grain-size strengthening occurs by increasing the number of grains, or
reducing the grain size.
40
The Importance of Defects
• Point defects can also have a big effect on the optical, magnetic &
electrical properties of materials.
• In semiconductors, dopants are critical to achieving desired performance;
however, defects like dislocations negatively affect properties.
• Addition of small amounts of foreign atoms/ions in materials can also be
used to produce dramatic color changes in the original material e.g.,
colored glasses.
41
Have You Ever Wondered?
42
Have You Ever Wondered?
43
Have You Ever Wondered?
44
Have You Ever Wondered?
45
Have You Ever Wondered?
46
Have You Ever Wondered? Chapter 5
• Aluminum oxidizes more easily than iron, so why do we
say that aluminum normally does not “rust?”
• How are the surfaces of certain steels hardened?
• Who invented the first contact lens?
• How does a tungsten filament in a light bulb fail?
2
What is Diffusion?
https://www.youtube.com/watch?v=eYnDTkVZyZ8
3
What is Diffusion
▪ Diffusion is the net flux of any species (ions/atoms/electrons/holes, etc.)
▪ Its magnitude depends on the concentration gradient and temperature.
Figs. 5.1,
Callister &
Rethwisch 10e. 4
Concentration Profiles
What is Diffusion
▪ Hundreds of applications in engineering
▪ Carburization for Steel Surface Hardening
▪ Dopant Diffusion for Semiconductor Devices
▪ Conductive Ceramics
▪ Creation of Plastic Beverage Bottles
▪ Oxidation of Aluminum
▪ Thermal Barrier Coatings for Turbine Blades
▪ Optical Fibers & Microelectronic Components
5
Rates of Diffusion
• Atoms/ions possess thermal energy, and thus will move around.
• The ability of atoms/ions to diffuse increases as temperature increases
through an Arrhenius-type equation:
Q
Rate c0 exp
RT
c0 : constant
cal J
R: gas constant 1.987 or 8.314
mol K mol K
T : absolute temperature (K )
cal J
Q : activation energy required to cause atoms to move or 6
mol mol
Mechanisms for Diffusion: Self-Diffusion
• Self-diffusion: random movement of atoms within an essentially
pure material. Atoms jump around from one lattice position to
another (e.g., by exchanging with a vacancy).
7
Mechanisms for Diffusion: Interdiffusion
8
Mechanisms of Interdiffusion
Vacancy diffusion: When an atom leaves a
lattice site to fill another one, it creates a
vacancy. Thus, diffusion involves
counterflows of atoms and vacancies.
dc
J D
dx
cm 2
D : diffusivity or diffusion coefficient
s
dc atoms
: concentration gradient 3
dx cm cm 11
Concentration Gradient and Profiles
• The concentration gradient acts as
the main thermodynamic driving
force for diffusion.
12
Example
• A 0.05 cm layer of MgO is deposited between layers of Ni and Ta to provide a
diffusion barrier that prevents reactions between the two metals. At 1400oC, Ni ions
diffuse through the MgO to the Ta layer. Determine the number of Ni ions passing
through the MgO per second. At 1400oC, the lattice parameter of Ni is 3.6 x 10-8 cm
and the diffusion coefficient is 9 x 10-12 cm2/s. Ni has FCC structure.
• Also, calculate/estimate the time required for 1 µm (10-4 cm) of Ni to be removed.
13
Example
14
Example
15
Temperature and Diffusivity
• Diffusion kinetics strongly depend on temperature. The diffusivity
(diffusion coefficient), D, relates to temperature through an
Arrhenius-type equation:
Q
D D0 exp
RT
D0 : constant (pre-exponential term)
cal J
R: gas constant 1.987 or 8.314
mol K mol K
T : absolute temperature (K )
cal J
Q : activation energy required for diffusion or 16
mol mol
Other Factors Affecting Diffusion
• In covalently bonded materials, the D value is low because Q
(activation energy) is high.
– Consistent with their high bond strength.
• Ionic materials have high Q because ions can only diffuse into
sites having same charge.
– Ions must squeeze past adjoining ions, pass by a region of opposite
charge, and move a relatively long distance.
17
Other Factors Affecting Diffusion
• Interstitial diffusion occurs faster than vacancy or substitutional
diffusion
• Close-packed crystal structures have higher Q than open crystal
structures
• Q is higher for materials with high melting points (i.e., strong
bonds)
• Cations diffuse faster than anions due to size
• Ionic diffusion also transports charge, thus enabling conductivity
18
Reference Diffusion Data
19
Reference Diffusion Data
https://www.youtube.com/watch?v=Aa8WOKGjm4s 20
Reference Diffusion Data
21
Reference Diffusion Data
22
Types of Diffusion
– Volume diffusion: Slow, high activation energy (Q)
– Grain boundary diffusion: Faster, lower Q
– Surface diffusion: Fastest, lowest Q
https://www.youtube.com/watch?v=lm9Zr3z3iWA 23
Time in Diffusion
• Diffusion requires time
• Controlling the diffusion time during processing can be the key to
producing uniform or unique (non-equilibrium) properties &
microstructures.
– e.g., times for heat treatments can be reduced by using higher
temperatures or shorter diffusion distances (e.g., thicknesses)
– e.g., steels quenched rapidly from high temperatures can prevent diffusion
and form nonequilibrium (strong) structures
24
Polymers - Permeability
• In polymers, we are most concerned with the diffusion of atoms or
small molecules between the long polymer chains, called
permeability.
• Denser polymers have lower permeability.
• Permeability is higher in amorphous polymers than in crystalline
polymers.
25
Fick’s 2nd Law
• Add in conservation of mass (diffusing species):
c J
t x
dc
• Combine with Fick’s 1st Law: J D
dx
c c c c2
D D 2
t x x t x
26
One Solution to Fick’s 2 nd Law
• The solution to the previous equation depends on the boundary
and initial conditions. For a 1D model, one solution is:
x
cs cx x 2
cs c0
erf , where erf x
0
exp y 2
dy
2 Dt
27
For Reference: Error Function Values
28
Example
Devices such as transistors are made by doping semiconductors.
The diffusion coefficient of phosphorus (P) in Si is D = 6.5 x 10-13
cm2/s at a temperature of 1100°C. Assume the source provides a
surface concentration of 1020 atoms/cm3 and the diffusion time is one
hour. Assume that the silicon wafer initially contains no P.
Calculate the depth at which the concentration of P will be 1018
atoms/cm3.
State any assumptions you have made while solving this problem.
29
Example
30
Example
31
Looking forward: Why do we care about
diffusion?
• Diffusion is critical in many materials processing techniques
• Sintering
• Powder metallurgy
• Diffusion bonding
• Heat treatments
• Strengthening mechanisms
32
Diffusion and Materials Processing
• Melting and Casting
– Diffusion plays an important role in the solidification of metals,
alloys, and glasses
– e.g., growth of doped single silicon crystals and non crystalline
organic glasses
33
Diffusion and Materials Processing: Sintering
• Sintering is a high-temperature treatment that joins particles into a solid mass
by reducing pore space between them.
• Lattice diffusion from the bulk into the neck region causes densification.
• e.g. manufacturing of ceramics & metal superalloys.
34
Diffusion and Materials Processing: Grain Growth
• Grain growth involves the movement of
grain boundaries, permitting larger
grains to grow at the expense of smaller
grains.
– Similar to what happens with froth
• The driving force is the reduction in
grain boundary area.
• Grain growth usually reduces strength,
and can also affect optical, magnetic, Al2O3 – 15 hours at 1350°C Al2O3 – 30 hours at 1350°C
and electrical properties.
35
Summary: Factors Influencing Diffusion
Diffusion is FASTER for... Diffusion is SLOWER for...
• cations • anions
37
Have You Ever Wondered?
▪ How are the surfaces of certain steels hardened?
38
Have You Ever Wondered?
▪ Who invented the first contact lens?
39
Have You Ever Wondered?
How does a tungsten filament in a light bulb fail?
40
Have you ever wondered? Chapter 3
• What is amorphous silicon, and how is it different from the
silicon used to make computer chips?
2
Atomic Arrangements
Short Range Order:
Water Vapor
No Order: Ar gas
3
Crystalline vs. Amorphous (SiO 2)
Crystalline Material: Amorphous Material:
Long-Range Order Short-Range Order
4
Amorphous vs. Crystalline Polymers
5
Liquid Crystals
https://youtu.be/MuWDwVHVLio?t=15 6
Single-Crystal vs. Polycrystalline
Single-Crystal (Si) Polycrystalline (steel)
7
Crystallography: Lattice and Basis
8
Lattice and Basis: 1D Example
9
2D Lattices
10
3D Lattices – Bravais Lattices
http://home.iitk.ac.in/~sangals/crystosim/crystaltut.html 11
3D Lattices (Additional Views)
12
Characteristics of the Crystal Systems
The lattice parameters (axial lengths) and interaxial angles are
used to classify unit cells for each of the 7 crystal systems.
13
Unit Cell
• A unit cell is a subdivision of the lattice (i.e., a repeat unit) that still
retains the overall characteristics of the entire lattice.
14
Number of Atoms Per Unit Cell
• Lattice points (and thus atoms) can be shared by more than one unit
cell.
• The number of atoms per unit cell depends on the number of atoms
on corners, faces, enclosed within the cell, etc.
15
Example – Cesium Chloride Structure
Cesium chloride (CsCl) is an ionic, crystalline compound. A unit cell of the CsCl
crystal structure is shown below. Chlorine anions are located at the corners of
the unit cell, and a cesium cation is located at the body-centered position of
each unit cell. Describe this structure as a lattice and basis and also fully define
the unit cell for cesium chloride (how many atoms and what type / where are
they located?).
16
Example – Cesium Chloride Structure
17
Crystal Structures of Metals
Three simple crystal structures
Face-centered cubic (FCC)
Body-centered cubic (BCC)
Hexagonal close-packed (HCP)
ex: Po
Directions within the unit cell in which the atoms are in continuous
contact are called close-packed directions.
In simple structures, we can use these directions to calculate the
relationship between the apparent size of the atom and the size of
the unit cell.
20
Coordination Number & Packing Factor
21
Definitions
Coordination Number
22
Atomic Packing Factor (APF)
for Simple Cubic
volume
atoms
atom
unit cell
a
APF =
volume
unit cell
close-packed
directions
atoms/unit cell: 24
Atomic Packing Factor: BCC
• APF for the body-centered cubic structure =
volume
R atoms
atom
a
unit cell
APF =
volume
unit cell 25
Face-Centered Cubic Structure (FCC)
• Atoms located at 8 cube corners and at the centers of the 6 faces.
--Note: All atoms in the animation are identical; the face-centered atoms
are shaded differently for ease of viewing.
ex: Al, Cu, Au, Pb, Ni, Pt, Ag • Coordination # = 12
atoms/unit cell:
26
Atomic Packing Factor: FCC
• APF for the face-centered cubic structure =
volume
atoms
atom
unit cell
a
APF = =
Density = = =
=
where n = number of atoms/unit cell
A = atomic weight
VC = Volume of unit cell = a3 for cubic
NA = Avogadro’s number
= 6.022 x 1023 atoms/mol
28
Cr has BCC crystal structure
A = 52.00 g/mol
R = 0.125 nm
n = 2 atoms/unit cell
R
a
= =
31
Atomic Packing Fraction and Density
Definition Others
https://youtu.be/PaGJwOPg2kU?t=101 32
Point Coordinates
A point coordinate is a lattice position in a unit cell
Determined as fractional multiples of a, b, and c unit cell edge lengths
z
a, b, c 1. Lattice position is
c a, b, c
2. Divide by unit cell edge lengths
(a, b, and c) and remove commas
y
a b
33
Crystal Directions – Miller Indices
1. Determine the coordinates of two points
that lie in the direction of interest.
2. Subtract the coordinates of the “tail” from
the “head.”
3. Clear fractions and reduce to lowest
integers
4. Enclose in square brackets [ ]. For
negative numbers, put a bar over the
number.
34
Example
35
Example
B
Example
C
Exercise
Draw the following direction vectors in the following cubic unit cells.
Indicate the axes and origin.
38
Common Crystallographic Directions
39
Crystal Directions – Some Observations
• Directions are vectors. Thus, a direction
and its negative are not identical.
- e.g., [100] is not equivalent to [100]
41
Linear Density of Atoms (LD)
LD = number of atoms centered on direction vector
length of direction vector
ex: linear density of Al in [110] direction
# atoms
a
LD
a = 0.405 nm length
42
Crystallographic Planes – Miller Indices
1. If plane passes through selected origin, establish
a new origin in another unit cell
2. Read off values of intercepts of plane
(designated A, B, C) with x, y, and z axes in
terms of a, b, c
3. Take reciprocals of intercepts
4. Normalize reciprocals of intercepts by multiplying
by lattice parameters a, b, and c
5. Reduce to smallest integer values
6. Enclose resulting Miller Indices in parentheses,
no commas i.e., (hkl)
43
Crystallographic Planes
Example Problem I
x y z z
1. Relocate origin
c
2. Intercepts
3. Reciprocals
4. Normalize y
a b
5. Reduction
x
6. Miller Indices
44
Crystallographic Planes
Example Problem II
x y z z
1. Relocate origin
2. Intercepts c
3. Reciprocals
4. Normalize y
a b
5. Reduction
x
6. Miller Indices
45
Exercise
Sketch the following planes within the unit cell. Draw one cell for each
solution. Show new origin and ALL necessary calculations.
(111) (203)
46
Common Crystallographic Planes
49
Additional Resources and Exercises
Indexing crystallographic planes
http://www.doitpoms.ac.uk/tlplib/miller_indices/lattice_index.php
Quiz
http://www.doitpoms.ac.uk/tlplib/miller_indices/questions.php
50
Miller Indices for Hexagonal Unit Cells
• A special set of Miller-Bravais indices
with four axes (hkil) has been devised
for hexagonal unit cells due to their
unique symmetry.
• We can use either a 3-axis (hkl) or a
4-axis (hkil) system for the HCP cells.
• h + k = -i due to redundancy of the 4-
axis system
51
Crystallographic Planes (HCP)
For hexagonal unit cells a similar procedure is used
Determine the intercepts with the a1, a2, and z axes, then determine the Miller-Bravais
Indices h, k, i, and l
z
example a1 a2 c
1. Relocate origin – not needed
2. Intercepts a ∞a c
3. Reciprocals 1/a 1/∞a 1/c
a2
4. Normalize a/a a/∞a c/c
1 0 1
a3
5. Reduction h=1 k=0 l=1
6. Determine index i = -(h + k) i = -(1 + 0) = -1 a1
7. Miller-Bravais Indices
52
Close Packed Direction and Planes
53
Planar Density of Atoms (PD)
PD = number of atoms centered on a plane
area of plane
2D repeat unit ex: planar density of (100) plane of BCC Fe
4
a R
3
# atoms
PD
Radius of iron,
R = 0.1241 nm area
54
Isotropy and Anisotropy E of Single Crystal
Cu (FCC)
• Material properties can vary with
direction. If this is the case, the material
is anisotropic.
• If a material’s properties are identical in
all directions, the material is called
isotropic.
• Many polycrystalline materials are effectively isotropic,
because the random orientation of grains cancels out
the anisotropy of individual grains. 55
Interstitial Sites
Interstitial sites are locations FCC FCC - tetrahedral FCC - octahedral
(small holes) between the host
atoms/ions into which smaller
atoms/ions may be placed.
e.g., cubic, octahedral, and
tetrahedral sites.
56
Interstitial Sites and Ionic Materials
57
Crystal Structure of Ionic Materials
58
Ceramic (Ionic) Structures
https://youtu.be/PgSRAsgrKmg?t=2 59
Other Fun Crystalline Structures
sin
2d hkl
a0
d hkl
h2 k 2 l 2 61
Have You Ever Wondered?
62
Have You Ever Wondered?
63
Have You Ever Wondered?
64
Have You Ever Wondered?
65