BIPN60020C

BYD Microelectronics Co., Ltd.

Intelligent Power Module
General Description Package BIP27-4426
BIPN60020C is an advanced intelligent power Features
module that BYD has newly developed and
designed to provide very compact and high  Very low thermal resistance due to using DBC
performance as ac motor drivers mainly targeting  600V-20A 3-phase IGBT inverter bridge
low-power inverter-driven applications like air including control ICs for gate driving and
conditioner and washing machine. It combines protection
optimized circuit protection and drive matched to  Divided negative dc-link terminals for inverter
low-loss IGBT. System reliability is further current sensing applications
enhanced by the integrated under-voltage  Single-grounded power supply due to built-in
lock-out and Over-current protection. The high HVIC and bootstrap diode
speed built-in HVIC provides optocoupler less  Isolation rating of 2500Vrms/min
single-supply IGBT gate driving capability that
further reduce the over all size of the inverter
system design. Each phase current of inverter
can be monitored separately due to the divided
negative dc terminals.

Applications
 Three-phase inverter drive for small power ac
motor control
 Home appliances applications like air
conditioner and washing machine

Typical Application Circuit

15V Line

P(27)
(19)VB(W)
VB
(18)VD(HW)
VD OUT
(17)IN(HW) COM
HW Cbs Cbsc IN VS W(26)
(20)VS(W)

(15)VB(V)
VB
(14)VD(HV)
VD OUT
(13)IN(HV) COM
HV
5V Line Cbs Cbsc (16)VS(V)
IN VS V(25)
M
M (11)VB(U)
Cdcs Vbus
NTC

VB
Rt1 (10)VD(HU) OUT
VD
COM
C HU Cbs Cbsc
(9)IN(HU)
IN VS U(24)
(12)VS(U)

U OTP Rf
(8)CIN OUT(LW)
Rt2 Ct Cin C(IN)
Rpf (7)CFO NW(23)
C(FO)
Rs2 Cfo (6)VFO
Fault VFO
(5)IN(LW)
LW IN(LW) OUT(LV)
(4)IN(LV)
LV IN(LV) NV (22) Rs1
(3)IN(LU)
LU IN(LU)
(2) COM
COM
(1)VD(L) OUT(LU)
VD
Cbpf Cpf NU (21)

Cbp15 Cbpc15

Fig 1. Typical Application Circuit

Datasheet Page 1 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

Pin Configuration
11.49
V 1
D(L)
COM 2 21 N
U
IN(LU) 3
IN(LV) 4 22 N
V
IN(LW)

20.18
5
VFO 6 23 N
CFO W
7
CIN 8

IN(HU) 9
VD(HU) 24 U
10
VB(U) 11 TC temperature test point
VS(U) 12
IN(HV) 13 25 V
VD(HV) 14
VB(V) 15
VS(V) 16
26 W
IN(HW)
17
VD(HW)
18
VB(W)
19
VS(W) 27 P
20

Fig 2. Pin Configuration(Top View)

Pin Descriptions
Pin Name Descriptions
1 VD(L) Low-side common bias voltage for IC and IGBTs driving
2 COM Common supply ground
3 IN(LU) Signal input for low-side U phase
4 IN(LV) Signal input for low-side V phase
5 IN(LW) Signal input for low-side W phase
6 VFO Fault output
7 CFO Capacitor for fault output duration time selection
8 CIN Capacitor (low-pass Filter) for over-current detection input
9 IN(HU Signal input for high-side U phase
10 VD(HU) High-side bias voltage for U phase IC
11 VB(U) High-side bias voltage for U phase IGBT driving
12 VS(U) High-side bias voltage ground for U phase IGBT driving
13 IN(HV) Signal input for high-side V phase
14 VD(HV) High-side bias voltage for V phase IC
15 VB(V) High-side bias voltage for V phase IGBT driving
16 VS(V) High-side bias voltage ground for V phase IGBT driving
17 IN(HW) Signal input for high-side W phase
18 VD(HW) High-side bias voltage for w phase IC
19 VB(W) High-side bias voltage for w Phase IGBT driving
20 VS(W) High-side bias voltage ground for W phase IGBT driving
21 NU Negative dc–link input for U phase
22 NV Negative dc–link input for V phase

Datasheet Page 2 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C
23 NW Negative dc–link input for W phase
24 U Output for U phase
25 V Output for V phase
26 W Output for W phase
27 P Positive dc–link input

Absolute Maximum Ratings (T J = 25°C, unless otherwise noted)

Inverter Part
Symbol Parameter Conditions Ratings Units
VPN Supply voltage Applied between P-NU, NV, NW 450 V
VPN(surge) Supply voltage (surge) Applied between P-NU, NV, NW 500 V
VCES Collector-emitter voltage VGE=0V,ICES=100uA,TJ=25°C 600 V
±IC Each IGBT collector current TC = 25°C 20 A
±ICP Each IGBT collector current (peak) TC = 25°C , less than 1ms 40 A
PC Collector dissipation TC = 25°C, per 1 chip 61 W
TJ Junction temperature (Note 1) -20~+125 °C

Note 1 : The maximum junction temperature rating of the power chips integrated within the IPM is 150°C (@ TC ≤ 100°C).
However, to ensure safe operation of the IPM, the average junction temperature should be limited to TJ (ave) ≤ 125°C (@
TC ≤ 100°C).

Control Part
Symbol Parameter Conditions Ratings Units
Applied between VD(HU), VD(HV), VD(HW),
VD Control supply voltage 20 V
VD(L) -COM
Applied between VB(U)-VS(U), VB(V)-VS(V),
VDB Control supply voltage 20 V
VB(W) -VS(W)
Applied between IN(HU), IN(HV), IN(HW),
VIN Input voltage -0.3~VD+0.3 V
IN(LU), IN(LV),IN(LW) )-COM
Fault output supply
VFO Applied between VFO-COM -0.3~VD+0.3 V
voltage
IFO Fault output current Sink current at VFO terminal 5.0 mA
Current sensing input
VCIN Applied between CIN-COM -0.3~VD+0.3 V
voltage

Bootstrap Diode Part

Symbol Parameter Conditions Ratings Units
VRRM Maximum Repetitive Reverse Voltage 600 V
IF Forward Current TC = 25°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2 A
TJ Junction temperature -20~+125 °C

Total System

Datasheet Page 3 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C
Symbol Parameter Conditions Ratings Units
Self protection supply voltage limit VD = 13.5~16.5V, inverter part TJ =
VPN(PROT) 400 V
(short circuit protection capability) 125°C,non-repetitive,less than 5us
TC Module case operation temperature –20 °C≤TJ ≤125 °C -20~+100 °C
TSTG Storage temperature -40~+125 °C
60Hz, sinusoidal, AC 1 minute,
VISO Isolation voltage 2500 Vrms
connecting pins to heat-sink plate

Thermal Resistance
Limits
Symbol Parameter Conditions Units
Min. Typ. Max.
Rth(j-c)Q Junction to case Inverter IGBT part (per 1/6 module) - - 1.63 °C/W
Rth(j-c)F thermal resistance Inverter FRD part (per 1/6 module) - - 2.48 °C/W

Electrical Characteristics (T J = 25°C, unless otherwise noted)

Inverter Part
Limits
Symbol Parameter Conditions Units
Min. Typ. Max.
Collector-emitter VD=VBS=15V,VIN=5V,IC=20A,
VCE(SAT) --- 2.0 2.3
saturation voltage TJ =25°C V
VF FRD forward voltage VIN=0V , IC=15A, TJ =25°C --- 1.9 2.3
ton --- 720 ---
tc(on) --- 340 ---
HS
toff --- 940 ---
tc(off) VPN=300V, VD=VBS=15V --- 220 ---
Switching times IC = 20A, VIN = 0 ↔ 5V ns
ton Inductive load (Note 2) --- 780 ---
tc(on) --- 390 ---
LS
toff --- 1225 ---
tc(off) --- 265 ---
Collector-emitter
ICES VCE=VCES,VGE=0V, TJ =25°C --- --- 100 μA
leakage current

Note 2 : ton and toff include the propagation delay time of the internal drive IC. tc(on) and tc(off) are the switching time of
IGBT itself under the given gate driving condition internally.See figure 3.

Datasheet Page 4 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

VCE
IC
90%
90%

10% tc(on) 10% 10% 10%

tc(off)

VIN
ton toff

Fig 3. Switching Time Definition

Control Part
Limits
Symbol Parameter Conditions Units
Min. Typ. Max.
VD=15V,IN(LU,LV,
IDL VD(L) -COM --- --- 600 μA
Quiescent VD LW ) =0V
supply current VD=15V,IN(HU,HV， VD(HU),VD(HV),
IDH VD(HW) -COM --- --- 300
HW ) =0V
μA
Quiescent VBS VBS=15V,IN(HU,HV, VB(U)-VS(U),VB(V)-
IQBS --- --- 150
supply current HW )=0V VS(V),VB(W)-VS(W)
VFOH Fault output VSC=0V,VFO circuit:4.7K to 5V pull-up 4.5 --- ---
VFOL voltage VSC=1V,VFO circuit:4.7K to 5V pull-up --- --- 0.8 V
Short circuit trip
VCIN(ref) TC = -20~100°C, VD = 15V（Note3） 0.44 0.51 0.56
level
UVDLD Detection level（LS） 11.0 12.0 13.0
UVDLR Supply circuit Rest level（LS） 12.0 13.0 14.0
under-voltage V
UVBSD Detection level（HS） 9.0 10.0 11.0
protection
UVBSR Rest level（HS） 10.0 11.0 12.0
Fault-out pulse CFO=26nF（Note4） --- 1.80 ---
tFO ms
width CFO=33nF（Note4） --- 2.30 ---
ON threshold
VIN(ON) 3.0 --- ---
voltage Applied between IN(HU), IN(HV), IN(HW),
V
OFF threshold IN(LU),IN(LV),IN(LW)-COM
VIN(OFF) --- --- 0.8
voltage

Note 3 : Short circuit protection is functioning only at the low-side.

Note 4 : The fault output pulse-width tFO depends on the capacitance value of CFO according to the following approximate
-6
equation : CFO ≈ 14.3 * 10 * tFO [F].

Datasheet Page 5 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

Bootstrap Diode Part

Symbol Parameter Conditions Min. Typ. Max. Units
VF Forward Voltage IF = 0.5A, TC = 25°C --- 1.15 --- V
Reverse Recovery
trr IF = 0.5A, TC = 25°C --- 40 --- ns
Time

Mechanical Characteristics and Ratings

Limits
Parameter Conditions Units
Min. Typ. Max.
Mounting torque Mounting screw: - M3 Recommended 0.62N.m 0.51 0.62 0.72 N.m
Weight --- 15.0 --- g
Device flatness (See Fig 4) 0 --- 120 um

(+)

(+)

Fig 4. Flatness Measurement Position

Recommended Operating Conditions

Recommened value
Symbol Parameter Conditions
Min. Typ. Max. Units
VPN Supply voltage Applied between P -NU,NV,NW --- 300 400
Control supply Applied between VD(HU),VD(HV),VD(HW),
VD 13.5 15.0 16.5 V
voltage VD(L)-COM
High-side bias Applied between VB(U) -VS(U),VB(V) -VS(V),
VBS 13.5 15.0 18.5
voltage VB(W) -VS(W)
ΔVD, Control supply
-1 --- 1 V/μs
ΔVDB variation
Blanking time for
tDEAD For each input signal 2.0 --- --- μs
preventing arm-short
fPWM PWMinput signal -20°C≤TC≤100°C, -20°C≤TJ≤125°C --- --- 20 KHz
Voltage for current Applied between NU,NV,NW -COM
VSEN -4 --- 4 V
sensing (Including surge voltage)

Datasheet Page 6 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

Time charts of IPM Protection Function

Input Signal

a4 a7
a6
IGBT G-E
Voltage

a2
a1 over current
a5
Output Current

over current reference

Voltage of
Shunt Resistance

CFO=33nF
a3 TFO=2.3ms(TYP.)
Fault Output Signal

Fig 5.Over Current Protection

（Low-side only ,with the external shunt resistance and RC filter）

a1 Normal operation: IGBT ON and carrying current
a2 Over current detection and filter
a3 Fault output timer operation starts: The pulse width of the VFO is set by the external capacitor CFO
a4 IGBT turns off softly
a5 IGBT OFF state
a6 VFO finishes output,but IGBTs don’t turn on until inputting next ON signal.
a7 Normal operation: IGBT ON and outputs current by next ON signal(L→H).

Input signal

b6
IGBT G-E
voltage
b1 b7
b5
Output current

b2 UVDLR b4
Control supply UVDLD
voltage
CFO=33nF，
b3
tFO=2.3ms(TYP.)
Fault output signal

Fig 6.Under-Voltage Protection of Low-side

Datasheet Page 7 of 12
b1 Normal operation: IGBT ON and carrying current
b2 Under voltage detection（UVDLD）
b3 Fault output timer operation starts: The pulse width of the VFO is set by the external capacitor CFO
b4 Under voltage reset（UVDLR）
b5 IGBT OFF state
b6 VFO finishes output,but IGBTs don’t turn on until inputting next ON signal.
b7 Normal operation: IGBT ON and outputs current by next ON signal(L→H).

Input signal

IGBT G-E c6
voltage
c1 c7
Output current c5

UVBSR c4
Control supply c2
UVBSD
voltage

c3
Fault Output Signal
Fig 7.Under-Voltage Protection of High-side

c1 Normal operation: IGBT ON and carrying current

c2 Under voltage detection（UVBSD）
c3 No fault output signal
c4 Under voltage reset（UVBSR）
c5 IGBT OFF state
c6 Under voltage reset,but IGBTs don’t turn on until inputting next ON signal.
c7 Normal operation: IGBT ON and outputs current by next ON signal(L→H).

Datasheet Page 8 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

Internal Equivalent Circuit and Input/Output Pins

P(27)
(19)VB(W)
VB
(18)VD(HW)
VD OUT
(17)IN(HW) COM
IN VS W(26)
(20)VS(W)

(15)VB(V)
VB
(14)VD(HV)
VD OUT
(13)IN(HV) COM
IN V(25)
VS
(16)VS(V)

(11)VB(U)
VB
(10)VD(HU) OUT
VD
(9)IN(HU) COM
IN VS U(24)
(12)VS(U)

(8)CIN OUT(LW)
C(IN)
(7)CFO NW(23)
C(FO)
(6)VFO
VFO
(5)IN(LW)
IN(LW) OUT(LV)
(4)IN(LV)
IN(LV) NV(22)
(3)IN(LU)
IN(LU)
(2)COM
COM
(1)VD(L) OUT(LU)
VD
NU(21)

Fig 8. Internal Equivalent Circuit and Input/Output Pins

Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and
protection functions
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, bootstrap diodes and three drive ICs for each IGBT

Datasheet Page 9 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

Detailed Package Outline Drawings（Unit：mm）

Package:BIP27-4426

B C A C B C A C B C A A A A A A A A A A

（ ）

Datasheet Page 10 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C

D A
C

X X

A B C D
X-X

Fig 9.Detailed Package Outline Drawings

Packing
package pcs/tube tube/ inner box inner box/ carton pcs/carton
tube 10 7 5 350

Datasheet Page 11 of 12
 BYD Microelectronics Co., Ltd.
BIPN60020C
RESTRICTIONS ON PRODUCT USE

 The information contained herein is subject to change without notice.

 BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high
quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to
their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing BME products, to comply with the standards of safety in making a safe design
for the entire system, including redundancy, fire-prevention measures, and malfunction prevention,
to prevent any accidents, fires, or community damage that may ensue. In developing your designs,
please ensure that BME products are used within specified operating ranges as set forth in the most
recent BME products specifications.

 The BME products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics,
domestic appliances, etc.). These BME products are neither intended nor warranted for usage in
equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of
which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage
include atomic energy control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, medical instruments, all
types of safety devices, etc.. Unintended Usage of BME products listed in this document shall be
made at the customer’s own risk.

Datasheet Page 12 of 12