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an asea

a3esbeam Con be Focuse d on

A Ond cqa tehe Squae oy uwoelea).


Fomolo S. H e - Ne ases C A 6 3 1 b Ff). ond a d i o t e
Fors imuD

ene9y
Intensty Poes
Area 6313x10

ohen aoiea
Owen

Fo% cvcle
TTY 11oS

6312x10

2 9 7 27 8 9 6 5

Luhen Diomete s
TD

i ven To sootho

Diomeer : 1.3mm
Find he intenS hoies
and Puwes 10 muw

I= 4xis ADsospion
3-14x ( 1 1 0 )

Sk/m

Psobabily
dtoms move Fs om E E2
P Aulv) enesgy density
Condition :i
Seontarf go2
N,PnN,

) N,B, u NA

ulv)
a Stimoloded

N.

u)

Absos ph on

Spotoneou3
,)
Saimudaded

N no. oK AMoMS in &tae 1.

No no b Qdoms n stae .
Bolt zmorp D i i b uHon Jao
- E,/KT
N =
6,/KT

atom3 mo e

e -E/kT
N w'An e nesgy

N n
-hv/ET
e

e
hr/T
-

Plank Cnes9 Pen8ity .

ulv)

eq3 and ca ) .
>Cempaiin
87Thv3

hv/KT
oo&ic c T
ntreducion
O Conducdos:

A Solid is a mnodresial uuich ho Some

Mas s, Volume ond occupise Some


Conduction
pace ond

valence
O Conductor
InsSulodo 9
Semi Conducov.
InSudadov:
Semiconduc~or3,

Enesgy
Intsunsic Bond Fosbiden
Exsinsic enes 3P
(iou o eiechsong
Pabe natPosaible)
Impsuty.)
Cnesmeniom,
Scon. P-e N-TPe )Semi -Conductos
Tvolent Peytavolen.

Accepto Oohod

Hole Flo electaon3


electson o8ble),.
ond
ln8ulatos

OiFFesence
between Con doctox,
Semi co ndvctor

S e m c o n d u c t o

Conductr Insslodor

He Cond uctivity
The Conductivity Semicondoct oy
The Conduc-hv insudod-os is
oF Condoctos S 8 modes aUe
vesyhigh vesy oud
I+has Mode ae
I hos vey T hos vesy
hiah 9esisthvi y Sesistit
oo Sesistivi ty
1 ho8 Smal
I t haS no T he Tooge
Fosbidden gapP Fosbidden 3P Fosbidden goP

These Sa Tnese S nmod These modes ae


Jge Oumbes OumBes >b numbe °5
oF etec irons elects ons Oua lable e lectoo avojlable
available Fos Condrti onn. Foconduc tmon
Conduc+oT

Exompe- metals, EomPie ExSiNicon,


Mi co laSS emaniom.
atuminium,

Coppes

Cosse ( 4

CMas. cUTe)
*Zenes diode

(E)
eechic eld

CUTsen

Oepletion
auyes (e)
cves
Cotent Cooouy'n3
Cmoane hc
Feld) Conducdo
O+)
O
ihen auoo1en Coouyi na Cordoctos placedin
adoonSvesise maanetic Field (B) then o potermhal

loped J n d n e Spoceman
ditte ience deve
*he d i e c H » n
CoTe nd CoDouna Conduch) ,

I ond B
Pepe ndicolo1 Jo bsth
Fowasd Bios Known a3 Hall e E
Phenomenon

Hoil v slt
age
e l e c t c held

Ciend
magne+c Fields
E h ickne9s
( m

LAseo CA) xd)

vI chovac+ei34ica volto De9uv odi on


CoTY
The Fovce on elects on due electsic

zenedon ietd
bTea

seo Fe -eE -
Reverse
CUTTent bioS
eld
due o monethc B ma9 netic tesla,
The Fosce on e l e c on

ield
Lv velocity
Fe-ev& F
C diy ection

Comp a9una ) onde

E N

chaoge densi ty
3 -ne
J = - he VnX

- hxe X

-A xh e X y
Fos PPe -Fos e
t y xhy e xLy Hall Cocient iS Sepe Sented
Thi&iS
VH Pes
detned aS dhe Soho o lechyic Retd ond
unit CwDent Denaiy Pes onit
mothplied b
moanehc Inducion.
The Sinale Coooues holes in a 3icon Somple i8
h a l l Coetci ent
2-05 10/mCalcudode
6 x 10c
Ru ne elects on chas

Mobility
Conductivity) SCResistvity) 6 2 1o

Hal ongle
n/c
RH 3.o4S 1o"
Jan B
Conduc+os3
o. k
Calcolote an n- t y p e e rmy e : 1Go2 x 19
ca0oues (h Sx is rn
choae
Calcdae.

S1o 60xIo

03 1

303x10

-]2us 1omc
esiShvi
Caleone
had gngle Colcoade HoU votoge
1c

3 Sm 9
10 -6 Tesa
R SS 10 "m/c

ton 0, Ru x

4an 1.404x10
O63 2

6 8x 10

calcslase no.
o chogt Caot
ha
voltog e
V 1mnv
lo m

e 6o2x1o

-1
De

160 x103 xx1o

3
60 olo 625x 1
Sola Cell orking
Lhen +he áncident Sunliah FaUs o n 3he Jup pe»
Soloo Cel is a pha he electron -hole pada
photovoJtodo device s e d
P-Seaion it aenesades
he v y Smau,
Convesu Solod enesgy thickneS& ok - Jayes being tnea
electrons ond holes amme diately Sieach he
Jnto elec+auca enevay
Joncioo ond h e ptobability o Jecombinai on
Symbo S much neduced.
baou e potentiad
Constsochi on Sunlg h At Jhe Juncion ney a c e a
thod in Junci on élect9uc Reld h c h Sepohabs
E hv
dhem.
he baooues potertiad S v ee p +he elechon
o e u 03 holeS
som P-Seai on do -Reaion a

rom
+PSeaion.
hi3 ead da on incseoSe a in the numbes h hole
7
n
8 de and eiectron on+he NSide he
Jon ction.
sn h e
The Occmoladi o n o chabes
Sides o h e Jonction Psod uces a
vstoe o

emF nouon a& phote cmF


The ceu is a P-N 3onCion diode uuish app Tozia
doped Semiconduc darhe Top e +ype a y e is Vi)T i5 nown as heopen ciau oltoee
and is Psopsiono dodhe lominoi on os
hin S1adiadion
made vey S hat the Jghr +he Si 2e
Fau Donction T SKhe i lumi nated Osea
may Peneàrabe 3 on
dopin Viin? when an Connec+ed
extes nad C ut 3
level3 ob ° doped SemiCondo Ctos ia vey high JOco 89 3he Solo C l t e s m i n al a cosvent
evesy ebT* i made ensuee dha dhe
Flous +hsouab
Sueace ceeo pepen dicua do Sun s moxim um
*he
cisucLi
nicke ahe Sglod Ceu
bec neaati
hove vea s esminal
o bcttuy
P-+ype matoiol Sustoun ded by a
uth N Side as the
Plated ung uhich desves a he Posive tesmiaJ
and P Side os the Posrtie eami nads
metallic Contot a the bsttom
6Ceu.
he
ob moteaid octS a negahee
+es mi no.
'
Appli coti on
USed in Satellaities pace.
>Remote eloces as a
Sod ce o Rne sgy
> Used jn battesy c hotgin dys+em
+ e J e c o m m u n i coh orn y + e m,
vsed in
uHh low
nelectronic e u pment
colcuuatoss
PoDes Consu mption uke

Mesuts
Fo naure
> ecoiendly SooTee

elean SooTce oene3


on.
Sutable hr louo Powea applicah
makes *hem
which
maitoi nonce ee
+he long °un.
n
Cost eective

pnotoval tai o Powes plantS

OemesitS
uOhich In Fee elecson thes
bbected by avajbi lity Sunliaht mohan F +he Conducti sr
*ne
and Ploce do looed
doy nisht Seasom to SeaS on Cle c t s on ,in cySiol Jlda

Dand-
Place vau a i ons sSumed do be an conahons

Poes Potenthal n d ke mplicit-


Fes hign Fosbidden
Re es Jasige space
ond>
J uo doken do be zes .

a pplicon+S. Faee electson he s eplan


instoll osion co&t no.o *heos
n i c a m los8. ) elec+ ical Cond
Tons posted uchhy
2 elects on Po ameanodian
evecon emniSson.
But could ngt exploun u h Some 3id3 de
Conducto ss. nSulcdo<s
ne omd Semni -Cond
potentia ac ed b uctor3
the hee elects on
caysta S nne
Somesnod Pes odie motc
hina u t n nme
-
Pes o Jathce
hos o donos
Fn n-+ype gesmeniumn Sompe Uni t 2
10m
den&iy
h o'/m3

Tesla
B O5
Soo /

3mm
602 x 19 Intes e r e ne.

3Aon Cee

3 nexV &sene Phoe. m


me Amplis

m p
ne

Soox 1 oS
6o 2xi0

Inierary
1

Pr h ose
Sorn e pha3e
16
diomeey ooaht Ond
Find Ou ne otsn3 u r a

Neoton' Ring
Desu vodi on.
n a eceo
The im one ooSe ved (A
mictoc o p e Paeo So. hot poth di e s e n c e

Sodium lomp)
MonachY mCdic : i ]
amf
Cyelloo ]hckness
Plane nc
ned
loss colou CoS(o) +
plae
A ix
7

Plone hickneás
wedge
Conwex
en,

Plone

giass Constsuctive mox)


elae
> - At Cos +

wovelen3th
>A 2 Co3 (o)
D S83o
O S236 á)
But
5833

Compaisina nd

ing o s med inside miC60cope)


D DY OD D E

iv 7

Dos oistibuti on

A (20+1) N

Compu>ing and ) 5 Cons tuchve

> (20 )

Compairin on d
NCnn-)

( (an-)
t 4hickness]
D

O (an-) n a nombe
cadeIode Rodi3

4e20-2)

Csmpai ona
3196 xi
17-33

D 4
ichel 3on whe ne = avelen 4 n
' ,To Find oud a v e le r ?
miTso diance, N . o onds ( F I a s
-cyorne

plode where
(2)To Find oud h i c k oeS 3

we R omediu m
nic knes , o P leee
no, o bond 3 A o v e engt

C
9ud dietence Jn
ovele naih.
Telesepc nd

yees

- 59oA 1om

N 1Founge

ocalazed

24Sx 1o
o9i9 mm o n39 x
1s m)
O1434 mm Co144x1om J

N S500.

N
A (s290x 1o
n(13x1o
Ses S
AA 1x10 m

A S 39 x1o'm

A-

1Ss

NA
2 ( u -1) -

>310o s)
S

O . o o 6X1o

Gx1o m
F(E /
1+e

e s beween h e Conducti sn
Jhe valence and
Orn
Fesmi Jevel J h e See i e c e
Jeve na Aves h e pxobobili ty
Stote i nconductin
o ccupenc y k
bond SS o c 03 h e JunocCop i
State n valen ce ond

Fos ntsen &ic Semi -Con ductos,enmev


es eAoCtly he Cen+es ohe Fosbden

Fors C

1 + e Fc- E / E T

Fos v

PCE
1+e )lT
Oc No. oF
electson nB
No, electan n v B
Tem pesatuse
N
Totol n9. oF ein B+V
De n N

N
Sta Poplio rn
Delinc pomping metn31ablr
sb1r\e3
inves S oY opticol Se8nodor.
iheo aht al3 n
ony
AuhoSe
317e Compoo ble
Coject
ne Aove \enam Un
7 e (G omn 33 a
depo tuoe
N Junen
the ne
n e ep2cttHon
cete the
oentS91ond 3he
P(E) phca
n aome
ia i3
Shado benehna

F(E P(E) rown 08 di cn n


n Pit
AAoct
To o-es ve cdi

JJwe Four Poo


1e Ce)/uT +e -
14
)uT
SosOICe
cev cbyec
Obchr
Ce- Cr)/vT Se meen
1t e
Tele scPe

2 e -C)/T TypescliRochon
eCc-ErIT
enhoffe
1+ey -Er)jk T
e C-Er)T_EcC-2E)/kT Soace nd Sceen The Sasoe ce he
Aoe ne ds
ode an ioite dstance Scbeen
2 CEv-Pr)/k
e E)l o dbaCtingevice
Js lena
collectecd by Conve r lera

Siae SA, double 3 Zonel led es S e uaedi


Fos deo cdevice.
eEc+ Ey -2Er)/kT
. Sh+
ond
2-1
03ed P eRacing
EeFv-1 E," deviCe.
1d e
The Cerhve de The Cent e
h ioc Patten
e e Gy -2Fr)r Paean i3
e l a3

E+E- Epa
Binnt Sin
Sins
DFF racion
Jn+es Fesenc e (nud cos) A * S n s Sio4s
minimum
In +he intes Fes ence pattes In +his ihe (2ua ( a s ) * ( n o - ) Aln
Ate not pe3et y
ne minimum intensity Intensty
deok.
S p e tect dod (n-)
Tnteke Sience vng ' d t o c i o n punyps 01e na
AOe k Some uid h the
Some Jwdth
o
In the intev 4eDie nce In d aton paesn
Pattevn altne moximi he Oe maximna

e o he Some OOeo Vaouable maxima.


Sn osa)+tesr
inten S1ty
o Pes
44(-6
two +pes -
Fronhof Fe
ConSuctive Fsenel.
CosY-657
desthuc Ave
Si 72
s99 1
a-

11x 1o*|
Nomeuca

Juuhieight als ot am onae o. 4s°


on inFlm 1 93 4333)
minimom thicknes of the m
CaCUabe
aPpeoST
wOveengn A 55 5300 X1 )
+he S ac+ed

Se 4S
A 139
Jush n oves on

vif e d
aen
urg 3er Crasar (nn-)

(1 95/2" m
19

(s199

99 ( 9)

4
nAr sse ur
\e ra
DiFF OCtian t a Single sit
a Snwil
Sin 6h
S9sce
Y Scecr
a Sin
cSin 9*7 "

Sn eg.n9*

Qeuvatep a Sin esn


Ph dFF L Covex lens
In A n e
Sn esmo
Sin BM 9: Oioction orq e
A
Suppobe eSio
Sn BM 1 npli tude.
mne
e R aSin
Ttensi Sin /
esine Bm
ve mesl
Pha3e diAence 9 aSid

bF 1eSina : esinG
*1
i

Consider tho+ the wicth o a


SG+ divided into(n) Cqual pad Ck- Cons+an
and the amplitude o each pad ia
a)S ho t a ampi hode (AS I ( *-1]
nxa

we se vecto addi +j on method nd Cacuwaie


ameli-ude
Lin i 3

esmVy
Mxima and
mninma
Find he Hall ongle i
Valoe F

mavimo
B O6 Tes
M 7esin 66» 1o "m"
P
esin9
SthA

MT S A O09323
S
I T, )
Sin.e
o' Intenei iy is
So 0d
moximum,
1-14S

minimo Colculade no. hov Cosoue S

A 3G6x10m/e
o 1i mazimumJ
#o. as at

e 6x 1 C.

d Z e sin9
-66 10 avo

m#o
mosder
tke 1 minimo,
m 1,2,3,4 miomo 6 6 xto
mnima
n 1 7 <i
m K_ csina
m esioba

eSin = m
mi m
and 0-s des
CalcoloJe Sooo
eo5 (m
S olth

x 19
(Ss S
o0

e sin8 mA
xSocx
O-ns S i n o
-
Sn

SinG CxIo
Sin 6x1o-"c

o-03L toO

O 2SSin 4ASso ok 1o
SinG 4xSoooxID

Sin 216
O ous i
Date Page no:
pate

x Double
Siit Sinale Sliti
R Sin

otensity
I - ka2

S Sauxce
L -Convexlens
Cesin + i r d + 2 ( inCasa
X Scseen
AB cD Double Stit Asin (BsidCoaa

Oesivahion ( ain cos 5)


Path diEF =A
A: S,k 2SindL1co3 S
(esina Sk) ingle Stit
Cr)sina S,k i 2cot 3

Phase difF 27 x Path diFF hSind Ccat S/)


S 2 . Xx Erd) Sina

A AAind Ca Cer) in
he aeSutant ampitude Rat pant P Can

be obtained oith ahe help ok Vecto ppoå e


additi an method
B: l c t s ) Sina.
and weknauo. tho

Yaung'S double S t Fomula


9 in Co
IR+ +9R,, Coaa| 4 (Sins) coa"p

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