ST 2SC3279

NPN Silicon Epitaxial Planar Transistor

for storobo flash and medium power amplifier
applications.

The transistor is subdivided into four groups L, M,

N and P, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta=25oC)

Symbol Value Unit

Collector Base Voltage VCBO 30 V

VCES 30
Collector Emitter Voltage V
VCEO 10

Emitter Base Voltage VEBO 6 V

Pulsed(Note 1) ICP 5 A
Collector Current
DC IC 2 A

Base Current IB 0.2 A

Power Dissipation Ptot 750 mW

O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C
Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
®
ST 2SC3279

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at VCE=1V, IC=0.5A L hFE 140 - 240 -
M hFE 200 - 330 -
N hFE 300 - 450 -
P hFE 420 - 600 -
at VCE=1V, IC=2A hFE 70 200 - -

Collector Cutoff Current

at VCB=30V ICBO - - 0.1 μA
Emitter Cutoff Current
at VEB=6V IEBO - - 0.1 μA
Collector-Emitter Breakdown Voltage
V(BR)CEO 10 - - V
at IC=10mA
Emitter-Base Breakdown Voltage
V(BR)EBO 6 - - V
at IE=1mA
Collector Output Capacitance
at VCB=10V, f=1.0MHz Cob - 27 - pF
Collector to Emitter Saturation Voltage
at IC=2A, IB=50mA VCE(sat) - 0.2 0.5 V
Base-Emitter Voltage
at VCE=1V, IC=2A VBE - 0.86 1.5 V

Transition Frequency
at VCE=1V, IC=0.5A fT - 150 - MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
®
ST 2SC3279

I C - VCE I C - VBE

5 5
COLLECTOR CURRENT I C (A)

COLLECTOR CURRENT I C (A)

40 COMMON EMITTER COMMON EMITTER
Ta=25 oC VCE=1V
4 30 4

3 20 3
Ta=100 oC
2 10 2
25 - 25
I B =5mA
1 1

0 0
0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE V BE (V)

COLLECTOR -EMITTER SATURATION

h FE - I C VCE(sat) - I C

500 0.5 COMMON EMITTER

Ta=100 oC VOLTAGE VCE(sat) (V) I C/I B =40
300 0.3
DC CURRENT GAIN h FE

25 Ta=100 oC
- 25 25
100 0.1 - 25

50 0.05

30 COMMON EMITTER 0.03

VCE=1V
0.05 0.1 0.3 1 3 0.05 0.1 0.3 1 3

COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)

SAFE OPERATING AREA Pc - Ta

COLLECTOR POWER DISSIPATION

10 1000
I C MAX.(PULSED)** 1ms*
COLLECTOR CURRENT I C (A)

5
3 I C MAX.(CONTINUOUS) -100ms*
800
P C (mW)

10ms*
1 DC OPERATION
(Ta=25oC) 600
0.5 * SINGLE NONREPETITIVE
0.3 PULSE
Ta=25 oC
400
* PULSE WIDTH 10 ms
**DUTY CYCLE 30%
0.1 200
CURVES MUST BE VCEO
0.05 DERATED LINEARLY WITH MAX.
INCREASE IN TEMPERATURE
0.03
0.03 0.1 0.3 1 3 10 30 0
0 25 50 75 100 125 150

COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( oC)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
®