Digital System Design 1 - Chapter 10 Slide

TON DUC THANG UNIVERSITY
FACULTY OF ELECTRICAL AND ELECTRONICS

ENGINEERING
402061
DIGITAL SYSTEM DESIGN 1
CHAPTER 10: DATA STORAGE
Thien T. Huynh, PhD.

2/15/2024 402061 – Chapter 10: Data Storage 1
10.1 Semiconductor memory basics

10.2 RAM
10.3 ROM
10.4 Programmable ROMs
10.5 The flash memory
10.6 Memory expansion
10.7 Special type of memory
10.8 Cloud storage
OBJECTIVES
IN THIS CHAPTER WE WILL LEARN

 Define the basic memory characteristics
 Explain what a RAM is and how it works
 Explain the difference between static RAMs
(SRAMs) and dynamic RAMs (DRAMs)
 Explain what a ROM is and how it works
 Describe the various types of PROMs

OBJECTIVES
 Discuss the characteristics of a flash

memory
 Describe the expansion of ROMs and RAMs
to increase word length and word capacity
 Discuss special types of memories such as
FIFO and LIFO
 Describe several characteristics of cloud
storage


10.2 RAM
10.3 ROM
10.8 Cloud storage
MEMORY UNITS
 1 Byte = 8 Bits
 Computer memory is divided into group of
bytes called words.
 1 word = internal register size
Ex: 8 bit register  1 word = 1 byte

assembly language: 1 word = 2 bytes

MEMORY UNITS
 Location of 1 unit of data in memory:

address
 In PCs, 1 byte is the smallest unit of data
that can be addressed
1
2
3 1
2
4 3
5 4
6 5
7 6
7
8
8
Address: row 7 1 2 3 4 5 6 7 8
MEMORY UNITS
a) How many bytes are shown?

b) What is the location of the blue byte?
1
2
3 a) 64 B
4
5 b) Row 2, column 8
6
7
8
1 2 3 4 5 6 7 8
MEMORY ADDRESSING
 Read / write data into memory

Read Write
Row
address
decoder
Address bus Memory array Data bus
Column address decoder

MEMORY ADDRESSING
 With 32 bit address bus, how many location

of data can be accessed?
232

WRITING DATA

READING DATA
*** Data bus: 2 way path

Address bus: 1 way path

10.2 RAM
10.3 ROM
10.8 Cloud storage
RANDOM ACCESS MEMORY (RAM)
 Temporary data storage

 read/write memory and can store data only
when power is applied
=> Volatile

RANDOM ACCESS MEMORY (RAM)
Bits stored in a Random-

Bits stored
semiconductor Access
Memory
as charge
(RAM)
latch or flip-flop on a
capacitor
Static Dynamic
RAM RAM
(SRAM) (DRAM)
Synchronous Fast Page Extended Burst

Asynchronous SRAM with Mode Data Out EDO DRAM Synchronous
SRAM DRAM
burst feature DRAM DRAM (BEDO
(ASRAM) (SB SRAM) (FPM DRAM) (EDO DRAM) DRAM) (SDRAM)

SRAM
Row Select 0
 Data is
stored in Row Select 1
latches or Row Select 2

Memory cell
flip-flops
Row Selectn
Data Input/Output
Buffers and Control
Data I/O Data I/O Data I/O Data I/O

Bit 0 Bit 1 Bit 2 Bit 3

SRAM
Row Select 0
 SRAM is faster than

DRAM but is more Row Select 1
complex, takes up Memory cell
more space, and is Row Select 2
more expensive.
 SRAMs are
available in many Row Selectn
configurations – a
typical large SRAM
is organized as 512
Data Input/Output
k X 8 bits. Buffers and Control
Data I/O Data I/O Data I/O Data I/O

Bit 0 Bit 1 Bit 2 Bit 3

DRAM
 Data is stored as charges on capacitors
 DRAMs are simple and

cost effective, but
require refresh circuitry
to prevent losing data.
 The address lines are

multiplexed to reduce
the number of address
lines.


10.2 RAM
10.3 ROM
10.8 Cloud storage
READ ONLY MEMORY (ROM)
 Read data from ROM

 It retains data with power removed
(Permanent data storage)
 ROM has system initialization files
 Non-volatile

ROM
Read-Only
Memory
(ROM)
Electrically
Mask Programmable Erasable Ultraviolet Erasable
ROM ROM PROM EPROM PROM
(PROM) (EPROM) (UV EPROM) (EEPROM)


10.2 RAM
10.3 ROM
10.8 Cloud storage
PROM, EPROM, EEPROM
 PROM: programmable ROM. A bit is

programmed into the memory using a fuse.
 EPROM: erasable PROM. Use UV light to
erase data.
 EEPROM: electrically EPROM. Program
and erase data using electrical pulses.


10.2 RAM
10.3 ROM
10.8 Cloud storage
FLASH MEMORY
 Flash memories are high density read/write

memories => nonvolatile.
 The ability to retain charge for years with no
applied power. Floating
gate Drain
Control
gate
MOS
transistor
symbol
– –
– – Source –
– –
– –
– – –
– –
logic 0 is stored logic 1 is stored
FLASH MEMORY
+V
 Flash memories Active load
arranged in arrays with Data out 0
an active load. Bit line 0 Reference

Comparator
 For simplicity, only one

Row select 0
column is shown. When
a specific row and
column is selected Row select 1
during a read operation,

the active load has Row select n
current.
Column select 0


10.2 RAM
10.3 ROM
10.8 Cloud storage
MEMORY SIZE
 𝑘 address lines
 𝑛 data lines
 2k x n memory

MEMORY EXPANSION
1) Address bus (expand word capacity)

2) Data bus (expand word size)

MEMORY EXPANSION
1) Address bus (expand word capacity)

RAM 2M ´ 8
Address RAM 1
20 bits
bus 1M ´ 8
21 bits EN
8 bits
Control
bus
8 bits Data
bus
RAM 2
20 bits 1M ´ 8
What is the purpose EN 8 bits
of the inverter?

MEMORY EXPANSION
 Data bus (expand word size)

RAM 2m ´ 2n
Address
bus m bits
RAM 1 RAM 2
m bits 2m ´ n m bits 2m ´ n
D D
Data Data
in/out n bits in/out n bits
Control
bus
2n bits
Data bus


10.2 RAM
10.3 ROM
10.8 Cloud storage
SIMMs AND DIMMs
 SIMMs (single in-line memory modules) and

DIMMs (dual in-line memory modules) are
plug-in circuit boards containing the ICs and
I/O brought out on edge connectors.
SIMM or DIMM
Socket on
system board

FIFO MEMORY
 FIFO (first in-first out).

Memory array stores
64 4-bit data words
64-bit shift register
I0 64-bit shift register O0

Data I 1 Input Output O1 Data
input I 2 buffers buffer O2 output
I3 64-bit shift register O3
64-bit shift register
Control lines Control lines
Input Output Output ready (OR)

control Marker register control
Shift in (SI) logic and controls logic Shift out (SO)

LIFO MEMORY
 LIFO (last in-first out). In microprocessors, a

portion of RAM is devoted to this type of
memory, which is called the stack.
0 0 1 1 0 1 0 0 Top-of-stack
Stack pointer 0 0 0 1 0 0 1 0
FFEC 0 0 0 0 0 0 0 0

MAGNETIC HARD DRIVE
 The magnetic hard drive is the backbone of

computer mass storage and is applied to
other devices such as digital video
recorders. Spindle
Platters
Actuator
arms
Read/Write
heads
Case
Hard drive with cover removed

OPTICAL STORAGE
 The compact disk (CD) uses a laser to burn

tiny pits into the media. Surrounding the pits
are flat areas called lands.
 The CD can be read using a low-power IR
laser that detects the difference between
pits and lands.


10.2 RAM
10.3 ROM
10.8 Cloud storage
CLOUD STORAGE
 Cloud storage system

CLOUD STORAGE

CLOUD STORAGE
 https://www.ibm.com/developerworks/cloud/l
ibrary/cl-cloudstorage/

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TON DUC THANG UNIVERSITY

FACULTY OF ELECTRICAL AND ELECTRONICS

Thien T. Huynh, PhD.

10.1 Semiconductor memory basics

IN THIS CHAPTER WE WILL LEARN

2/15/2024 402061 – Chapter 10: Data Storage 3

 Discuss the characteristics of a flash

2/15/2024 402061 – Chapter 10: Data Storage 4

10.1 Semiconductor memory basics

Ex: 8 bit register  1 word = 1 byte

2/15/2024 402061 – Chapter 10: Data Storage 6

 Location of 1 unit of data in memory:

a) How many bytes are shown?

 Read / write data into memory

Address bus Memory array Data bus

Column address decoder

2/15/2024 402061 – Chapter 10: Data Storage 9

 With 32 bit address bus, how many location

2/15/2024 402061 – Chapter 10: Data Storage 10

2/15/2024 402061 – Chapter 10: Data Storage 11

*** Data bus: 2 way path

10.1 Semiconductor memory basics

 Temporary data storage

2/15/2024 402061 – Chapter 10: Data Storage 14

Bits stored in a Random-

Synchronous Fast Page Extended Burst

2/15/2024 402061 – Chapter 10: Data Storage 15

latches or Row Select 2

Data I/O Data I/O Data I/O Data I/O

2/15/2024 402061 – Chapter 10: Data Storage 16

 SRAM is faster than

Data I/O Data I/O Data I/O Data I/O

2/15/2024 402061 – Chapter 10: Data Storage 17

 Data is stored as charges on capacitors

 DRAMs are simple and

 The address lines are

2/15/2024 402061 – Chapter 10: Data Storage 18

10.1 Semiconductor memory basics

 Read data from ROM

2/15/2024 402061 – Chapter 10: Data Storage 20

2/15/2024 402061 – Chapter 10: Data Storage 21

10.1 Semiconductor memory basics

 PROM: programmable ROM. A bit is

2/15/2024 402061 – Chapter 10: Data Storage 23

10.1 Semiconductor memory basics

 Flash memories are high density read/write

 Flash memories Active load

arranged in arrays with Data out 0

an active load. Bit line 0 Reference

 For simplicity, only one

during a read operation,

2/15/2024 402061 – Chapter 10: Data Storage 26

10.1 Semiconductor memory basics

2/15/2024 402061 – Chapter 10: Data Storage 28

1) Address bus (expand word capacity)

2/15/2024 402061 – Chapter 10: Data Storage 29

1) Address bus (expand word capacity)

2/15/2024 402061 – Chapter 10: Data Storage 30

 Data bus (expand word size)

2/15/2024 402061 – Chapter 10: Data Storage 31

10.1 Semiconductor memory basics

 SIMMs (single in-line memory modules) and

2/15/2024 402061 – Chapter 10: Data Storage 33