, One,

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

VN66 SERIES
N-Channel Enhancement-Mode MOS Transistors

PRODUCT SUMMARY
PART V(BR)DSS ros(ON) ID TO-220/TO-220SD TOP VIEW
NUMBER (V) (n> (A) PACKAGE

VN66AD 60 3 1.7 TO-220

VN66AFD 60 3 1,46 TO-Z20SD

TO-220 1 23
Performance Curves: VNDQ06 (See Section 7)
1 GATE
2 & TAB - DRAIN
3 SOURCE

TO-220SD
1 SOURCE
2 GATE
3 & TAB - DRAIN

ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)2

PARAMETERS/TEST CONDITIONS SYMBOL VN66AD VN86AFD UNITS

Drain-Source Voltage VDS 60 60

V
Gate-Source Voltage VQS ±30 ±30

T C =25°C 1,7 1.46

Continuous Drain Current lID.,
Tc = WC 1 0.92 A

Pulsed Drain Current1 I DM 3 3

T c = 25°C 20 15
Power Dissipation PD W
Tc = 100°C 8 6

Operating Junction and Storage Temperature Tj. Tstg -55 to 150

"C
Lead Temperature
(1/16" from case for 10 seconds) TL 300

THERMAL RESISTANCE
THERMAL RESISTANCE SYMBOL VN66AD VN66AFD UNITS

Junction-to-Case RthJC 6.25 8.3 "C/W

'Pulse width limited by maximum junction temperature.

2Absolute maximum ratings have been revised.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
VN66 SERIES
ELECTRICAL CHARACTERISTICS1 LIMITS

VN664

PARAMETER SYMBOL TEST CONDITIONS4 TYPa MIN MAX UNIT

STATIC
Drain-Source 70 60
Breakdown Voltage V(8Fl)OSS VOS = O V , I0 = 10.HA
V
Gato Threshold VGSIM VDS = VQS.ID = 1 mA 1.5 0.8 2.5
Voltage
Vns = 0 V ± 1 ±100
Date-Body Leakage IGSS nA
V03=±30V T 0 =125'C ± 5 + 500
Zero Gate Voltage VQS = 0 V 0.05 1
Drain Currant loss «A
VQS = 48V T 0 =125°C 0.3 10
On-State Drain VDS = 10 V. VQS = 10 V
Current^ 'o(ON| 1.8 1.5 A
VQS = 5V. ID = 0.3 A 1.8 6
Drain-Source 1.3 3
cm-Resistance' rDS[ON) V<jS = 10 V ft
lo = 1 A | Tc=125 a C 2.6 e
Forward , 9PS V0s = 10 V, I0 = O.S A 350 170 mS
Transconductanos •*
Common Source VDS = 7.5V. 10 = 0.1 A 1100
Output Conductance3
«OS MS

DYNAMIC

Input Capacitance e iss ' 35 so

Vos = 25 V
VQS = 0 V
Output Capacitance GSSS 25 40 PF
f = 1 MHz
Reverse Transfer
Capacitance c,,, 6 10

SWITCHING
V0o = 25 V, R L = 2 3 ft.
Turn-On Time 1ON a 15
I D = 1 A. VQEN= 10V
RG- 25 fL
Turn-Off Time »OPF (Switching time Is essentially Independent of 9.5 15
operating temperature)

NOTES: 1. T 0 = 25 «C unless otherwise noted.

2. For design aid only, not subject to production testing.
3. Pulse test: PW = 300.us , duty cycle £2%.
4. Data sheet L'mlts and/or test conditions have been revised.