DATA SHEET

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Silicon Carbide (SiC) V(BR)DSS RDS(ON) MAX ID MAX

MOSFET – EliteSiC, 1200 V 87 mW @ 18 V 36 A
65mohm, 1200V, M3S,
D2PAK-7L Drain (TAB)

NVBG070N120M3S
Features
• Typ. RDS(on) = 65 mW @ VGS = 18 V Gate (Pin 1)

• Ultra Low Gate Charge (QG(tot) = 57 nC)

• High Speed Switching with Low Capacitance (Coss = 57 pF) Driver Source (Pin 2)
• 100% Avalanche Tested
Power Source (Pins 3, 4, 5, 6, 7)
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, N−CHANNEL MOSFET
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 1200 V D2PAK−7L
CASE 418BJ
Gate−to−Source Voltage VGS −10/+22 V
Recommended Operation Values TC < 175°C VGSop −3/+18 V
of Gate−to−Source Voltage MARKING DIAGRAM
Continuous Drain Steady TC = 25°C ID 36 A
Current (Notes 2, 3) State BG070N
Power Dissipation PD 172 W 120M3S
(Note 2) AYWWZZ

Continuous Drain Steady TC = 100°C ID 25 A

Current (Notes 2, 3) State
BG070N120M3S = Specific Device Code
Power Dissipation PD 86 W A = Assembly Location
(Note 2) Y = Year
WW = Work Week
Pulsed Drain Current TC = 25°C IDM 93 A
(Note 4) ZZ = Lot Traceability

Operating Junction and Storage Temperature TJ, Tstg −55 to °C

Range +175
ORDERING INFORMATION
Source Current (Body Diode) IS 33 A
TC = 25°C, VGS = −3 V (Note 2) Device Package Shipping†

Single Pulse Drain−to−Source Avalanche EAS 91 mJ NVBG070N120M3S D2PAK−7L 800 / Tape

Energy (IL(pk) = 13.5 A, L = 1 mH) (Note 5) & Reel

Maximum Temperature for Soldering (10 s) TL 270 °C †For information on tape and reel specifications,
including part orientation and tape sizes, please
Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specification
device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D.
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. The maximum current rating is based on typical RDS(on) performance.
4. Repetitive rating, limited by max junction temperature.
5. EAS of 91 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13.5 A,
VDD = 100 V, VGS = 18 V.

© Semiconductor Components Industries, LLC, 2021 1 Publication Order Number:

March, 2023 − Rev. 0 NVBG070N120M3S/D
 NVBG070N120M3S

THERMAL CHARACTERISTICS
Parameter Symbol Max Unit
Junction−to−Case − Steady State (Note 2) RqJC 0.87 °C/W
Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 40

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 − − V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = 1 mA, referenced to 25°C − 0.3 − V/°C
Temperature Coefficient (Note 7)

Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 1200 V − − 100 mA
Gate−to−Source Leakage Current IGSS VGS = +22/−10 V, VDS = 0 V − − ±1 mA
ON−STATE CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 7 mA 2.04 2.9 4.4 V
Recommended Gate Voltage VGOP −3 − +18 V
Drain−to−Source On Resistance RDS(on) VGS = 18 V, ID = 15 A, TJ = 25°C − 65 87 mW
VGS = 18 V, ID = 15 A, TJ = 175°C − 136 −
(Note 7)

Forward Transconductance gFS VDS = 10 V, ID = 15 A (Note 7) − 12 − S

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 800 V − 1230 − pF
Output Capacitance COSS − 57 −
Reverse Transfer Capacitance CRSS − 5 −
Total Gate Charge QG(TOT) VGS = −3/18 V, VDS = 800 V, − 57 − nC
ID = 15 A
Threshold Gate Charge QG(TH) − 3.2 −
Gate−to−Source Charge QGS − 9.6 −
Gate−to−Drain Charge QGD − 17 −
Gate−Resistance RG f = 1 MHz − 4.2 − W
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −3/18 V, − 11 − ns
VDS = 800 V,
Rise Time tr ID = 15 A, − 12 −
RG = 4.7 W
Turn−Off Delay Time td(OFF) − 30 −
inductive load (Notes 6, 7)
Fall Time tf − 8.8 −
Turn−On Switching Loss EON − 119 − mJ
Turn−Off Switching Loss EOFF − 36 −
Total Switching Loss Etot − 155 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward ISD VGS = −3 V, TC = 25°C − − 33 A
Current (Note 2) (Note 7)

Pulsed Source−Drain Diode Forward ISDM − − 93

Current (Note 4)

Forward Diode Voltage VSD VGS = −3 V, ISD = 15 A, TJ = 25°C − 4.7 − V

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 NVBG070N120M3S

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)

Parameter Symbol Test Condition Min Typ Max Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −3/18 V, ISD = 15 A, − 15 − ns
dIS/dt = 1000 A/ms, VDS = 800 V
Reverse Recovery Charge QRR (Note 7) − 63 − nC
Reverse Recovery Energy EREC − 5.7 − mJ
Peak Reverse Recovery Current IRRM − 8.6 − A
Charge time tA − 8.3 − ns
Discharge time tB − 6.3 − ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. EON/EOFF result is with body diode
7. Defined by design, not subject to production test.

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 NVBG070N120M3S

TYPICAL CHARACTERISTICS

80 2.0
VGS = 20 V to 15 V 12 V

RDS(ON), NORMALIZED DRAIN−TO−

SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)

60
1.5
12 V
40
VGS = 15 V to 20 V
1.0
20

0 0.5
0 2 4 6 8 10 0 20 40 60 80
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5 500
ID = 15 A ID = 15 A
RDS(ON), NORMALIZED DRAIN−TO−

VGS = 18 V RDS(ON), ON−RESISTANCE (mW)

SOURCE ON−RESISTANCE

2.0 400

1.5 300

1.0 200
TJ = 150°C

0.5 100
TJ = 25°C

0 0
−75 −50 −25 0 25 50 75 100 125 150 175 200 4 8 12 16 20
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source
Temperature Voltage

50 160
VDS = 10 V RG = 4.7 W Etot
140 VDD = 800 V
40 VGS = 18/−3 V Eon
ID, DRAIN CURRENT (A)

SWITCHING LOSS (mJ)

120 TC = 25°C

30 100

80
20 60
TJ = 175°C TJ = 25°C
40 Eoff
10
20
TJ = −55°C
0 0
0 5 10 15 20 5 7 9 11 13 15
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, COLLECTOR CURRENT (A)
Figure 5. Transfer Characteristics Figure 6. Switching Loss vs. Collector Current

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 NVBG070N120M3S

TYPICAL CHARACTERISTICS

160 150
RG = 4.7 W Etot VDD = 800 V
140 ID = 15 A ID = 7.5 A Etot
VGS = 18/−3 V VGS = 18/−3 V
Eon
SWITCHING LOSS (mJ)

SWITCHING LOSS (mJ)

120
Eon
100
100

80

60
50
Eoff
40 Eoff
20
0 0
600 650 700 750 800 0 2 4 6 8 10
VDD, DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W)
Figure 7. Switching Loss vs. Drain−to−Source Figure 8. Switching Loss vs. Gate Resistance
Voltage

200 18
VGS = −3 V ID = 15 A VDD = 400 V
IS, REVERSE DRAIN CURRENT (A)

100 15
VDD = 800 V
12

9
VGS (V)

VDD = 600 V
10 TJ = 175°C 6

TJ = 25°C 3

0
TJ = −55°C
1 −3
0 2 4 6 8 10 0 10 20 30 40 50 60
VSD, BODY DIODE FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 9. Reverse Drain Current vs. Body Figure 10. Gate−to−Source Voltage vs. Total
Diode Forward Voltage Charge

10K 100
IAV, AVALANCHE CURRENT (A)

CISS
1K 25°C
CAPACITANCE (pF)

150°C
COSS
100 10

10 CRSS
f = 1 MHz
VGS = 0 V
1 1
0.1 1 10 100 800 0.0001 0.001 0.01 0.1 1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, AVALANCHE TIME (ms)
Figure 11. Capacitance vs. Drain−to−Source Figure 12. Unclamped Inductive Switching
Voltage Capability

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 NVBG070N120M3S

TYPICAL CHARACTERISTICS

40 1000
RqJC = 0.87°C/W
TJ = Max Rated
100 Single Pulse

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

30 VGS = 18 V
TC = 25°C
10 ms
10
20 100 ms
10 ms
1
1 ms
10 RqJC = 0.87°C/W
0.1 RDS(on) Limit
Thermal Limit 100 ms/DC
Package Limit
0 0.01
25 50 75 100 125 150 175 0.1 1 10 100 1000
TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Continuous Drain Figure 14. Safe Operating Area
Current vs. Case Temperature
20K
P(PK), PEAK TRANSIENT POWER (w)

10K RqJC = 0.87°C/W

Single Pulse
TC = 25°C

1K

100

10
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE WIDTH (sec)
Figure 15. Single Pulse Maximum Power
Dissipation

2
1
THERMAL RESISTANCE (°C/W)
ZqJC, EFFECTIVE TRANSIENT

50% Duty Cycle

20%
10%
0.1 5%
2%
1%

0.01 Single Pulse PDM Notes:

RqJC = 0.87°C/W
t1 Peak TJ = PDM x ZqJC(t) + TC
t2 Duty Cycle, D = t1 / t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 16. Junction−to−Case Transient Thermal Response

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 NVBG070N120M3S

PACKAGE DIMENSIONS

D2PAK7 (TO−263−7L HV)

CASE 418BJ
ISSUE B

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 NVBG070N120M3S

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