The Igbt Device Physics Design and Applications of The Insulated Gate Bipolar Transistor 2Nd Edition B Jayant Baliga Ebook Full Chapter

The IGBT Device: Physics, Design and
Applications of the Insulated Gate

Bipolar Transistor 2nd Edition B. Jayant
Baliga
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The IGBT Device
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The IGBT Device
Physics, Design and
Applications of the Insulated
Gate Bipolar Transistor
Second Edition
B. Jayant Baliga
North Carolina State University,
Raleigh, NC, United States
Elsevier
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The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, United Kingdom
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(other than as may be noted herein).
Notices
Knowledge and best practice in this field are constantly changing. As new research and experience broaden
our understanding, changes in research methods, professional practices, or medical treatment may
become necessary.
Practitioners and researchers must always rely on their own experience and knowledge in evaluating and
using any information, methods, compounds, or experiments described herein. In using such
information or methods they should be mindful of their own safety and the safety of others,
including parties for whom they have a professional responsibility.
To the fullest extent of the law, neither the Publisher nor the authors, contributors, or editors, assume
any liability for any injury and/or damage to persons or property as a matter of products liability,
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contained in the material herein.
ISBN: 978-0-323-99912-0
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Publisher: Matthew Deans

Acquisitions Editor: Stephen Jones
Editorial Project Manager: Maria Elaine D. Desamero
Production Project Manager: Prem Kumar Kaliamoorthi
Cover Designer: Greg Harris
Typeset by STRAIVE, India
I dedicate this book to my wife, Pratima, for her support during my
work on the development of the insulated gate bipolar transistor
(IGBT) while working at the General Electric Company.
I also dedicate this book to the thousands of engineers from around the
world who worked on improving the performance of the IGBT over the
last 40 years and applying these devices to serve the needs of all
sectors of our worldwide economy.
Contents
About the Author....................................................................................................xxi
Foreword ............................................................................................................. xxvii
Preface to the Second Edition ..............................................................................xxix
Preface to the First Edition ..................................................................................xxxi
CHAPTER 1 Introduction........................................................... 1
1.1 IGBT Applications Spectrum ........................................................3
1.2 Basic IGBT Device Structures.......................................................4
1.3 IGBT Development and Commercialization History....................4
1.4 Scaling of Power Ratings.............................................................13
1.5 Summary ......................................................................................16
References.................................................................................... 17
CHAPTER 2 IGBT Structure and Operation ............................... 21
2.1 Symmetric D-MOS Structure.......................................................21
2.2 Asymmetric D-MOS Structure ....................................................24
2.3 Trench-Gate IGBT Structure .......................................................25
2.4 Transparent Emitter IGBT Structure ...........................................26
2.5 Novel IGBT Structures ................................................................27
2.6 Lateral IGBT Structures...............................................................30
2.7 Complementary IGBT Structures ................................................32
2.8 Advanced IGBT Structures..........................................................32
2.9 Summary ......................................................................................34
References.................................................................................... 34
CHAPTER 3 IGBT Structural Design ......................................... 37
3.1 Threshold Voltage ........................................................................38
3.2 Symmetric IGBT Structure ..........................................................40
3.2.1 Blocking Voltage ............................................................... 41
3.2.2 On-State Characteristics .................................................... 43
3.2.3 Stored Charge .................................................................... 48
3.2.4 Turn-Off Switching Waveforms ....................................... 49
3.2.5 Turn-Off Power Loss......................................................... 53
3.2.6 Power Loss Trade-Off Curve ............................................ 54
3.3 Asymmetric IGBT Structure........................................................55
3.3.3 Stored Charge .................................................................... 66
vii
viii Contents

3.4 Transparent Emitter IGBT Structure ...........................................80
3.4.3 Stored Charge .................................................................... 87
3.5 Silicon Carbide IGBT Structures.................................................97
3.5.1 N-Channel Asymmetric SiC IGBT Structure ................... 99
3.5.2 Blocking Characteristics.................................................. 100
3.5.3 On-State Voltage Drop .................................................... 102
3.5.4 Turn-Off Characteristics.................................................. 107
3.5.5 Switching Energy Loss per Cycle................................... 110
3.6 Optimum SiC Asymmetric IGBT Structure ..............................111
3.6.1 Optimum Structure Design.............................................. 111
3.6.2 On-State Voltage Drop .................................................... 113
3.6.3 Turn-Off Characteristics.................................................. 114
3.6.4 Power Loss Trade-Off Curves......................................... 117
3.6.5 Maximum Operating Frequency ..................................... 118
3.7 Summary ....................................................................................119
References.................................................................................. 120
CHAPTER 4 Safe Operating Area Design ................................ 123
4.1 Parasitic Thyristor ......................................................................124
4.2 Suppressing the Parasitic Thyristor ...........................................125
4.2.1 Deep P+ Diffusion ........................................................... 126
4.2.2 Reducing Gate Oxide Thickness ..................................... 128
4.2.3 Diverter Structure ............................................................ 132
4.2.4 Cell Topology .................................................................. 133
4.2.5 Latch-Up Proof Structure ................................................ 138
4.3 Safe Operating Area...................................................................139
4.3.1 Forward-Biased SOA....................................................... 140
4.3.2 Reverse Biased SOA ....................................................... 144
4.3.3 Short Circuit SOA ........................................................... 146
4.4 Novel Silicon Device Structures................................................147
4.5 Silicon Carbide Devices.............................................................148
4.6 Summary ....................................................................................150
References.................................................................................. 150
Contents ix
CHAPTER 5 Chip Design, Protection, and Fabrication............. 153

5.1 Active Area ................................................................................153
5.2 Gate Pad Design.........................................................................155
5.3 Edge Termination Design ..........................................................159
5.4 Integrated Sensors ......................................................................161
5.4.1 Overcurrent Protection .................................................... 162
5.4.2 Overvoltage Protection .................................................... 166
5.4.3 Overtemperature Protection............................................. 168
5.5 Planar-Gate Device Fabrication Process ...................................169
5.6 Trench-Gate Device Fabrication Process ..................................173
5.7 Lifetime Control.........................................................................176
5.8 Summary ....................................................................................178
References.................................................................................. 180
CHAPTER 6 Package and Module Design .............................. 183
6.1 Discrete Device Package............................................................183
6.2 Improved Discrete Device Package...........................................187
6.3 Basic Power Module ..................................................................188
6.4 Flat-Pack Power Module............................................................191
6.5 Metal Baseplate Free Power Module ........................................193
6.6 Smart Power Modules................................................................195
6.6.1 Dual In-Line Packages .................................................... 196
6.6.2 Intelligent Power Modules .............................................. 198
6.7 Reliability ...................................................................................200
6.8 Summary ....................................................................................201
References.................................................................................. 201
CHAPTER 7 Gate Drive Circuit Design ................................... 203
7.1 Basic Gate Drive ........................................................................203
7.2 Asymmetric Gate Drive .............................................................205
7.3 Two-Stage Gate Drive ...............................................................205
7.4 Active Gate Voltage Control .....................................................206
7.5 Variable Gate Resistance Drive.................................................208
7.6 Digital Gate Drive......................................................................211
7.7 Short Circuit Protection .............................................................212
7.8 Magnetically Coupled Gate Drive .............................................213
7.9 Posicast Gate Drive....................................................................215
7.10 EMI Reduction Gate Drive ........................................................215
7.11 The BaSIC Topology .................................................................217
7.12 Summary ....................................................................................220
References.................................................................................. 220
x Contents
CHAPTER 8 IGBT Circuit Models ........................................... 223

8.1 Physics-Based Circuit Model ....................................................223
8.1.1 SABER NPT-IGBT Circuit Model ................................. 224
8.1.2 SABER PT-IGBT Circuit Model .................................... 229
8.1.3 SABER IGBT Electrothermal Circuit Model ................. 232
8.1.4 SABER IGBT1 Model .................................................... 233
8.2 IGBT Analog Behavioral Model ...............................................235
8.3 Model Parameter Extraction ......................................................239
8.4 Summary ....................................................................................240
References.................................................................................. 240
CHAPTER 9 IGBT Applications: Transportation ....................... 243
9.1 Gasoline-Powered Vehicles .......................................................243
9.1.1 Kettering Mechanical Ignition System ........................... 244
9.1.2 Electronic Ignition System .............................................. 244
9.1.3 Ignition IGBT Design...................................................... 246
9.1.4 Dual-Voltage Clamped Ignition IGBT Design ............... 248
9.1.5 Smart Ignition IGBT Design ........................................... 250
9.1.6 Ignition IGBT Products ................................................... 250
9.2 Auxiliary Automotive Drives ....................................................251
9.3 Electric and Hybrid Electric Vehicles.......................................252
9.3.1 EV Inverter Design.......................................................... 253
9.3.2 EV IGBT Chip Design .................................................... 256
9.3.3 EV Regenerative Breaking.............................................. 259
9.4 EV Charging Stations ................................................................260
9.4.1 EV Charging Requirements............................................. 261
9.4.2 EV Charging Circuit........................................................ 263
9.4.3 Modern EV Charging Station.......................................... 264
9.5 Electric Transit Bus ...................................................................265
9.5.1 Electric Bus Control Circuits .......................................... 266
9.5.2 Electric Bus Charging ..................................................... 268
9.5.3 Inductive Electric Bus Charging ..................................... 269
9.6 Electric Trams and Trolleys ......................................................269
9.7 Subway and Airport Trains .......................................................273
9.8 Electric Locomotives .................................................................274
9.8.1 DC Power Bus ................................................................. 274
9.8.2 AC Power Bus ................................................................. 276
9.8.3 Multisystem Electric Trains ............................................ 276
9.9 Diesel–Electric Locomotives.....................................................277
9.10 High-Speed Electric Trains .......................................................279
Contents xi
9.10.1 Motor Drive Topology .................................................. 280

9.10.2 IGBT Module Design .................................................... 282
9.11 Freight Trains.............................................................................284
9.12 Marine Propulsion......................................................................284
9.12.1 Ro-Ro Ships................................................................... 285
9.12.2 Cruise Ships ................................................................... 286
9.12.3 LNG Carriers ................................................................. 287
9.12.4 Circuit Breakers for Ships ............................................. 288
9.13 More Electric Aircraft ...............................................................289
9.13.1 DC–DC Converter ......................................................... 291
9.13.2 DC–AC Inverter............................................................. 291
9.13.3 Electromechanical Aircraft Rudder Actuator ............... 291
9.13.4 Brushless DC Motor Drives .......................................... 293
9.14 All-Electric Aircraft...................................................................294
9.14.1 Civil Tilt Rotorcraft....................................................... 294
9.14.2 ANPC Inverter Drive..................................................... 294
9.14.3 Passenger Drones........................................................... 295
9.15 IGBT Modules for Aircraft Applications..................................296
9.16 IGBT Cosmic Ray Failures .......................................................296
9.17 Summary ....................................................................................296
References.................................................................................. 297
CHAPTER 10 IGBT Applications: Industrial .............................. 305
10.1 Industrial Motor Drives .............................................................305
10.2 Adjustable Speed Drives for Motor Control .............................306
10.3 Pulse Width Modulated ASD ....................................................308
10.3.1 PWM Waveforms .......................................................... 310
10.3.2 Power Loss Trade-Off Curves....................................... 311
10.3.3 Power Loss Analysis ..................................................... 315
10.4 Factory Automation ...................................................................317
10.4.1 Complementary IGBTs.................................................. 318
10.4.2 p-Channel IGBT Design................................................ 318
10.5 Robotics......................................................................................321
10.5.1 Cableless Power Supply ................................................ 321
10.5.2 Industrial Robot Controller ........................................... 322
10.5.3 Linear Actuators ............................................................ 323
10.5.4 Mobile Gantry Crane Robots ........................................ 323
10.6 Welding ......................................................................................325
10.6.1 Step-Down Buck Converter .......................................... 326
10.6.2 Transformer-Coupled Power Supply............................. 326
xii Contents
10.6.3 Dual Utility Power Supply ............................................ 327

10.6.4 Robot Arc Welding ....................................................... 328
10.6.5 Consumable Electrode Welding.................................... 328
10.6.6 IGBT Optimization for Welding................................... 329
10.7 Induction Heating ......................................................................330
10.7.1 Forging, Annealing, and Tube/Pipe Welding ............... 331
10.7.2 Fluid Heating ................................................................. 332
10.7.3 Metal Melting Furnace .................................................. 333
10.7.4 IGBT Design for Induction Heating ............................. 334
10.8 Milling and Drilling Machines ..................................................334
10.8.1 High-Speed Milling Machine ........................................ 335
10.8.2 High-Speed Drilling Machine ....................................... 336
10.8.3 High-Speed Electrical Discharge Machining................ 337
10.9 Metal and Paper Mills ...............................................................338
10.9.1 Metals Industries............................................................ 340
10.9.2 Pulp and Paper Industries.............................................. 341
10.10 Electrostatic Precipitators ..........................................................342
10.11 Textile Mills...............................................................................344
10.12 Mining and Excavation..............................................................345
10.13 IGBT Optimization for Industrial Applications ........................346
10.14 Low Power IPM.........................................................................348
10.15 Dead-Time Compensation .........................................................349
10.16 Hybrid Si IGBT/SiC MOSFET Switches..................................349
10.17 Summary ....................................................................................350
References.................................................................................. 351
CHAPTER 11 IGBT Applications: Lighting ................................ 357
11.1 TRIAD Incandescent Lamps .....................................................359
11.2 Compact Fluorescent Lamps .....................................................361
11.2.1 CFL Light Emission ...................................................... 362
11.2.2 Half-Bridge Ballast Topology ....................................... 363
11.2.3 Power Transistor Comparison ....................................... 366
11.2.4 Self-Resonant Ballast Topology.................................... 367
11.2.5 Power Factor Correction ............................................... 367
11.2.6 Discrete IGBT Designs for CFLs.................................. 368
11.2.7 Integrated IGBT Designs for CFLs............................... 370
11.3 Light-Emitting Diodes ...............................................................372
11.3.1 LED Driver .................................................................... 373
11.3.2 Conventional LED Driver ............................................. 374
11.3.3 Multiple Series/Parallel LED Driver............................. 374
Contents xiii
11.3.4 Conducted EMI.............................................................. 375

11.4 Strobe Flash Light......................................................................376
11.4.1 Strobe Flash Circuit....................................................... 377
11.4.2 IGBT Design for Strobe Light ...................................... 378
11.4.3 Professional Flash.......................................................... 379
11.5 Xenon Short Arc Lamps ............................................................380
11.5.1 Automobile Headlights.................................................. 380
11.5.2 Movie Theater Projectors .............................................. 381
11.6 Stroboscopic Imaging ................................................................382
11.7 Dimmable Luminaries ...............................................................383
11.8 Rapid Thermal Annealing .........................................................383
11.9 LED-Based Endoscopy..............................................................384
11.10 Summary ....................................................................................384
References.................................................................................. 385
CHAPTER 12 IGBT Applications: Consumer.............................. 389
12.1 Large Appliances .......................................................................391
12.1.1 Air Conditioners (Heat Pumps)..................................... 391
12.1.2 Refrigerators .................................................................. 393
12.1.3 Washing Machine .......................................................... 397
12.1.4 Microwave Oven ........................................................... 402
12.1.5 Induction Cooktop Range.............................................. 408
12.1.6 Dishwasher..................................................................... 413
12.2 Small Appliances .......................................................................415
12.2.1 Portable Induction Cooktop and Rice
Cooker............................................................................ 415
12.2.2 Food Processors (Blenders, Juice Makers, Mixers)...... 417
12.2.3 Vacuum Cleaners........................................................... 420
12.3 Television...................................................................................421
12.3.1 TV Sets With CRTs....................................................... 422
12.3.2 Plasma TV Sets.............................................................. 423
12.3.3 Preregulator Circuit ....................................................... 427
12.4 IGBT Design Optimization for Consumer Applications ..........428
12.4.1 IGBT Optimization for Motor Drives........................... 429
12.4.2 IGBT Optimization for Induction Cooking .................. 431
12.4.3 IGBT Optimization for TV Sets.................................... 433
12.4.4 IGBT Optimization for Power Factor
Correction ...................................................................... 435
12.5 Summary ....................................................................................435
References.................................................................................. 437
xiv Contents
CHAPTER 13 IGBT Applications: Medical ................................ 441

13.1 X-Ray Machine..........................................................................442
13.1.1 Series–Parallel Resonant Power Supply ....................... 444
13.1.2 Dual-Mode Power Supply ............................................. 446
13.2 Computed Tomography .............................................................447
13.2.1 PWM-Resonant Converter Power Supply..................... 448
13.2.2 Resonant Inverter Power Supply in Rotating
Gantry ............................................................................ 449
13.2.3 Resonant Inverter Power Supply in Stationary
Gantry ............................................................................ 450
13.3 Magnetic Resonance Imaging ...................................................451
13.3.1 Two-Paralleled Four-Quadrant DC Chopper
Power Amplifier ............................................................ 453
13.3.2 Four-Paralleled Full-Bridge Power Amplifier .............. 454
13.3.3 Stacked Three-Bridge Power Amplifier........................ 456
13.3.4 Multioutput Phase-Shifted Power Amplifier ................ 458
13.3.5 Series Voltage Compensated Power Supply................. 460
13.3.6 Supercapacitor Energy Storage Power Supply ............. 461
13.4 Medical Ultrasonography ..........................................................462
13.4.1 Ultrasonography Principles ........................................... 463
13.4.2 Pulsed Power Supply ..................................................... 464
13.5 Defibrillators ..............................................................................466
13.5.1 Automatic External Defibrillators ................................. 468
13.5.2 Energy Generation and Pulse Forming in AEDs.......... 470
13.5.3 Implantable Cardioverter Defibrillator.......................... 470
13.5.4 Cardioverter Defibrillator for Surgery .......................... 472
13.6 Medical Synchrotron..................................................................472
13.6.1 CNAO Magnet Coil Power Supply............................... 474
13.6.2 GUNMA Magnet Coil Power Supply ........................... 476
13.7 Medical Lasers ...........................................................................477
13.7.1 Pulse Compression Network Power Supply ................. 480
13.7.2 Capacitor Discharge Power Supply .............................. 480
13.7.3 Series–Parallel Transformer Power Supply .................. 481
13.8 Sterilization and Disinfection ....................................................481
13.9 IGBT Design for Medical Applications ....................................483
13.10 Summary ....................................................................................484
References.................................................................................. 485
CHAPTER 14 IGBT Applications: Defense ................................ 489

14.1 Power Electronic Building Blocks ............................................490
14.1.1 PEBB-1, PEBB-2, and PEBB-3 .................................... 493
Contents xv
14.1.2 Naval Frequency Changers ........................................... 494

14.1.3 Shunt Active Power Filter ............................................. 494
14.1.4 Three-Level ANPC-VSC PEBB.................................... 495
14.1.5 PEBB for More-Electric Aircraft .................................. 495
14.2 The Electric Warship .................................................................497
14.2.1 Propulsion Drive Options .............................................. 498
14.2.2 Naval Shipboard Power Distribution ............................ 500
14.2.3 Solid-State Transfer Switch........................................... 501
14.2.4 Solid-State Circuit Breakers.......................................... 502
14.2.5 Direct Conversion System............................................. 504
14.2.6 Hybrid ANPC H-Bridge System ................................... 505
14.3 Aircraft Carriers .........................................................................506
14.3.1 Railgun Projectile Launcher.......................................... 507
14.3.2 Aircraft Launchers ......................................................... 508
14.4 Nuclear and Diesel-Electric Submarines...................................509
14.4.1 Quiet Electric Drive....................................................... 509
14.4.2 IGBT Power Cycling..................................................... 511
14.5 Army Vehicles ...........................................................................512
14.5.1 Bidirectional DC–DC Converter ................................... 513
14.6 Air Force Jets.............................................................................515
14.6.1 Electrical Power Distribution Architecture................... 517
14.6.2 Portable Railgun ............................................................ 519
14.7 Missile Defense..........................................................................520
14.7.1 Radar Transmitter .......................................................... 521
14.7.2 Klystron Radar Power Supply....................................... 521
14.7.3 Doppler Radar Pulse Power Supply.............................. 523
14.7.4 Agile Mirror Radar ........................................................ 524
14.7.5 Ground-Based Radar for Theater Missile Defense....... 525
14.8 IGBTs for Defense Applications ...............................................526
14.8.1 Pulse Power Capability ................................................. 526
14.8.2 Reliability....................................................................... 527
14.9 Summary ....................................................................................529
References.................................................................................. 530
CHAPTER 15 IGBT Applications: Renewable Energy ................. 535
15.1 Hydroelectric Power ..................................................................536
15.1.1 Large Power Plants........................................................ 537
15.1.2 Small Power Plants........................................................ 539
15.1.3 Decoupled Voltage and Frequency Controller ............. 540
15.1.4 Auxiliary Generation Units ........................................... 540
15.2 Photovoltaic Power ....................................................................541
15.2.1 PV Inverter Topologies ............................................... 544
xvi Contents
15.2.2HERIC PV Inverter ..................................................... 545

15.2.3Three-Phase PV Inverter ............................................. 546
15.2.4Nonisolated Interactive PV Inverter............................ 546
15.2.5Nonisolated Buck-Boost PV Inverter.......................... 546
15.2.6Maximum Power Point Tracking Circuit
for PV Inverter............................................................. 548
15.2.7 Current Source PV Inverter......................................... 548
15.2.8 Three-Phase Current Source PV Inverter.................... 549
15.2.9 Commercial PV Converter .......................................... 550
15.2.10 NPC2 Topology for Solar Farm.................................. 551
15.2.11 Dual-Source Multilevel Inverter for Residential
Solar Power.................................................................. 551
15.2.12 PV Energy Storage ...................................................... 552
15.2.13 IGBTs for PV Applications......................................... 554
15.3 Wind Power ...............................................................................555
15.3.1 Wind Power Generator Configurations......................... 557
15.3.2 Basic Converter Topology............................................. 559
15.3.3 Off-Shore Wind Power Installations ............................. 559
15.3.4 Chinese off-Shore Wind Power Installation ................. 563
15.3.5 European off-Shore Wind Power Installation............... 563
15.3.6 Standalone Wind Power Installation ............................. 564
15.3.7 STATCOM for Reactive Power Compensation............ 565
15.3.8 IGBTs for Wind Power Applications............................ 565
15.4 Wave Power ...............................................................................569
15.4.1 Osprey Wave Energy..................................................... 570
15.4.2 Wave Dragon Energy .................................................... 572
15.4.3 Bolt Buoy Energy .......................................................... 573
15.4.4 Optimum Damping Strategy ......................................... 574
15.4.5 Oscillating Water Column............................................. 575
15.5 Tidal Power................................................................................575
15.6 Geothermal Power .....................................................................577
15.6.1 Power Generation Architecture ..................................... 577
15.7 Summary ....................................................................................578
References.................................................................................. 582
CHAPTER 16 IGBT Applications: Power Transmission............... 587
16.1 HVDC Transmission..................................................................588
16.2 HVDC Components ...................................................................590
16.3 HVDC Trends ............................................................................590
16.3.1 Gratz Bridge .................................................................. 592
16.3.2 CSC-Based HVDC ........................................................ 593
Contents xvii
16.3.3 Static Synchronous Compensator.................................. 594

16.3.4 Self-Powered IGBT Switch........................................... 595
16.3.5 Hockey-Puck Press-Pack IGBT Design ........................ 596
16.3.6 IGBT Ratings for VSC-HVDC ..................................... 596
16.4 AC Power Transmission ............................................................597
16.4.1 Facts ............................................................................... 598
16.4.2 Static VAR Compensator (SVC)................................... 599
16.4.3 Static Synchronous Compensator.................................. 600
16.4.4 SVC Light...................................................................... 601
16.4.5 SVC and STATCOM in China ..................................... 601
16.4.6 Urban STATCOM Design............................................. 602
16.4.7 STATCOM Stability Analysis ...................................... 603
16.5 HVDC Back-to-Back Converter................................................603
16.6 Off-Shore Power Transmission .................................................603
16.6.1 Oil Rig Power Transmission ......................................... 604
16.6.2 Wind Farm Power Transmission................................... 604
16.7 Premium Quality Power Park....................................................606
16.8 IGBT Designs for Power Transmission ....................................606
16.9 Summary ....................................................................................609
References.................................................................................. 609
CHAPTER 17 IGBT Applications: Financial............................... 613
17.1 Power Quality Equipment .........................................................613
17.2 Power Reliability and Quality ...................................................614
17.3 Dynamic Voltage Restorer ........................................................616
17.4 Uninterruptible Power Supplies.................................................617
17.4.1 Fuji Electric 200 kVA UPS........................................... 618
17.4.2 Fujikura 10 kVA UPS ................................................... 620
17.4.3 Toshiba 500 kVA UPS .................................................. 621
17.4.4 Yuasa Corporation 3 kVA UPS .................................... 621
17.4.5 Daikin UPS .................................................................... 624
17.4.6 Single-Stage UPS Topology.......................................... 624
17.4.7 Transformerless 300 kVA UPS..................................... 625
17.4.8 UPS With Static Transfer Switch.................................. 627
17.4.9 Three-Phase Four-Wire Hybrid Frequency
Parallel UPS................................................................... 628
17.5 Premium Quality Power Park....................................................629
17.6 IGBT Designs for UPS ..............................................................630
17.7 IGBT UPS Failure Modes .........................................................632
17.8 Summary ....................................................................................632
References.................................................................................. 632
xviii Contents
CHAPTER 18 IGBT Applications: Energy Storage ...................... 635

18.1 Pumped Hydro Energy Storage .................................................636
18.1.1 Variable Speed Pumped Storage Plant ......................... 638
18.1.2 Voltage Sag Compensation ........................................... 639
18.1.3 Stabilizing Wind and Solar Renewable
Energy Sources .............................................................. 639
18.2 Other Energy-Storage Technologies .........................................640
18.2.1 Mitigating Wind Power Fault Ride Through
Using Supercapacitor Storage ....................................... 641
18.2.2 Mitigating Solar Power Voltage Fluctuations
With Battery Energy Storage ........................................ 641
18.2.3 Battery Energy Storage System .................................... 642
18.2.4 Fuzzy Logic Controlled STATCOM ............................ 642
18.3 Data Center Energy Storage ......................................................643
18.3.1 Energy-Storage Options ................................................ 643
18.3.2 Distributed Energy Storage ........................................... 644
18.3.3 DC Voltage Distribution ............................................... 645
18.4 Summary ....................................................................................645
References.................................................................................. 646
CHAPTER 19 IGBT Applications: Other .................................... 647
19.1 Smart Home ...............................................................................647
19.1.1 Smart Socket and Smart Switch.................................... 647
19.1.2 Smart Power Module..................................................... 649
19.2 Printing and Copying Machines ................................................650
19.3 Inductive Power Transfer ..........................................................653
19.3.1 Stage Lighting................................................................ 653
19.3.2 Embedded Electric Vehicle Chargers ........................... 654
19.4 Airport Security X-Ray Scanners..............................................656
19.5 Pulse Power................................................................................657
19.5.1 Marx High-Voltage Pulse Generator ............................ 657
19.5.2 Ion Implantation ............................................................ 658
19.5.3 Cancer Treatment Pulse Generator ............................... 660
19.6 Particle Physics ..........................................................................660
19.6.1 Stanford Linear Accelerator .......................................... 661
19.6.2 International Linear Collider ......................................... 663
19.6.3 Fermilab Main Injector.................................................. 664
19.6.4 Japan Hadron Facility.................................................... 665
19.6.5 CERN Large Hadron Collider....................................... 666
19.6.6 Spallation Neutron Source............................................. 669
Contents xix
19.7 Pulsed Lasers .............................................................................669

19.7.1 Power Supply................................................................. 669
19.7.2 IGBT Modules ............................................................... 670
19.8 Food Sterilization.......................................................................670
19.9 Water Treatment ........................................................................673
19.9.1 Disinfection.................................................................... 674
19.9.2 Desalination ................................................................... 675
19.9.3 Sewage Treatment ......................................................... 679
19.9.4 Fouling of Water Piping................................................ 679
19.9.5 Industrial and Pharmaceutical Pollution ....................... 680
19.10 Oil/Petroleum Extraction ...........................................................680
19.10.1 Oil Pipe Heating .......................................................... 681
19.10.2 Subsea Oil Extraction .................................................. 683
19.10.3 Athabasca Oil Sands.................................................... 683
19.11 Petrochemical Plant ...................................................................685
19.12 Gas Liquefaction........................................................................685
19.13 Superconducting Magnetic Storage...........................................686
19.14 Fusion Power .............................................................................687
19.15 Standby Power Generators ........................................................690
19.16 Roller Coasters...........................................................................691
19.17 National Aeronautics and Space Administration ......................693
19.17.1 Space Shuttle Main Engine Thrust Control ................ 694
19.17.2 Space Shuttle Orbital Maneuvering System ............... 696
19.17.3 Space Shuttle Power Distribution ............................... 696
19.17.4 International Space Station Power Distribution.......... 697
19.17.5 Manned Interplanetary Missions ................................. 698
19.17.6 Cryogenic Power Electronics ...................................... 698
19.17.7 IGBT Failure Analysis ................................................ 699
19.18 Summary ....................................................................................700
References.................................................................................. 700
CHAPTER 20 IGBT Social Impact ............................................ 707
20.1 Electronic Ignition System ........................................................709
20.1.1 Fuel Savings................................................................... 710
20.1.2 Consumer Cost Savings................................................. 710
20.1.3 Carbon Dioxide Emission Reduction............................ 713
20.2 Adjustable-Speed Motor Drives ................................................716
20.2.1 Electrical Energy Savings ............................................. 717
20.2.2 Electricity Cost Savings ................................................ 719
xx Contents
20.3 Compact Fluorescent Lamps .....................................................722

20.3.1 Electrical Energy Savings ............................................. 725
20.3.2 Electricity Cost Savings ................................................ 725
20.4 Future Social Impact..................................................................727
20.5 Summary ....................................................................................728
References.................................................................................. 730
CHAPTER 21 Synopsis ........................................................... 733
21.1 State-of-the-Art IGBT Products ................................................733
21.2 Wide Bandgap Semiconductor Power Devices.........................736
21.2.1 State-of-the-Art SiC Power MOSFETs......................... 737
21.2.2 Cost analysis .................................................................. 740
21.3 Summary ....................................................................................741
References.................................................................................. 742
Index ......................................................................................................................745
About the Author
Jay Baliga is internationally recognized for his leadership in the area of power semi-
conductor devices. In addition to more than 700 publications in international journals
and conference digests, he has authored and edited 26 books (Power Transistors,
IEEE Press 1984; Epitaxial Silicon Technology, Academic Press 1986; Modern
Power Devices, John Wiley 1987; High Voltage Integrated Circuits, IEEE Press
1988; Solution Manual: Modern Power Devices, John Wiley 1988; Proceedings
of the 3rd Int. Symposium on Power Devices and ICs, IEEE Press 1991; Modern
Power Devices, Krieger Publishing Co. 1992; Power Electronics Technology and
Applications I, IEEE Press 1992; Proceedings of the 5th Int. Symposium on Power
Devices and ICs, IEEE Press 1993; Power Semiconductor Devices, PWS Publishing
Company 1995; Solution Manual: Power Semiconductor Devices, PWS Publishing
Company 1996; Cryogenic Operation of Power Devices, Kluwer Press 1998; Power
Electronics Technology and Applications II, IEEE Press 1998; Silicon RF Power
MOSFETs, World Scientific Publishing Company 2005; Silicon Carbide
Power Devices, World Scientific Publishing Company 2006; Fundamentals of
Power Semiconductor Devices, Springer Science, 2008; Solution Manual: Funda-
mentals of Power Semiconductor Devices, Springer Science, 2008; Advanced Power
Rectifier Concepts, Springer Science, 2009; Advanced Power MOSFET Concepts,
Springer Science, 2010; Advanced High Voltage Power Device Concepts, Springer
Science, 2011; Chinese Edition of Fundamentals of Power Semiconductor Devices,
Springer Science 2012; The IGBT Device: Physics, Design, and Applications,
Elsevier Press 2015; Chinese Edition of Advanced High Voltage Power Devices
Concepts, China Machine Press 2015; Gallium Nitride and Silicon Carbide Power
Devices, World Scientific Publishing Company 2016; Fundamentals of Power
Semiconductor Devices, Second Edition, Springer Science 2018; Wide Bandgap
Semiconductor Power Devices, Elsevier 2019).
In addition, he has contributed chapters to another 24 books. He holds 122 US
patents in the solid-state area. In 1995, one of his inventions was selected for the
B.F. Goodrich Collegiate Inventors Award presented at the Inventors Hall of Fame.
Prof. Baliga obtained his bachelor of technology degree in 1969 from the Indian
Institute of Technology (IIT), Madras, India. He was the recipient of the Philips India
Medal and the Special Merit Medal (as valedictorian) at IIT, Madras. He obtained his
masters and Ph.D. degrees from Rensselaer Polytechnic Institute (RPI), in Troy, New
York, in 1971 and 1974, respectively. His thesis involved gallium arsenide diffusion
mechanisms and pioneering work on the growth of InAs and GaInAs layers using
organometallic CVD techniques. This technology is now widely used to manufacture
light-emitting diodes, lasers, radio frequency devices, and compound
semiconductor-based ICs. At RPI, he was the recipient of the IBM Fellowship in
1972 and the Allen B. Dumont Prize in 1974.
From 1974 to 1988, Baliga performed research and directed a group of 40
scientists at the General Electric Research and Development Center in Schenectady,
xxi
xxii About the Author
New York, in the area of power semiconductor devices and high-voltage integrated cir-
cuits. During this time, he pioneered the concept of combining metal oxide semicon-
ductor (MOS) and bipolar physics to create a new family of discrete devices. He is the
inventor of the insulated gate bipolar transistor (IGBT), which is now in production by
many international semiconductor companies. This invention is widely used around the
globe for air conditioning, home appliance (washing machines, refrigerators, mixers,
etc.) control, factory automation (robotics), medical systems (CAT scanners, uninter-
ruptible power supplies), and electric streetcars/bullet trains as well as for the drive train
in electric and hybrid electric cars. IGBT-based motor control improves efficiency by
more than 40%. The IGBT was essential in the deployment of compact fluorescent
lamps to replace incandescent lamps, improving efficiency by 75%. Since two-thirds
of the electricity in the world is used to run motors and 20% of the electricity in the
world is used for lighting, the availability of IGBTs has produced a cumulative electri-
cal energy savings of more than 100,000 TWh. In addition, the IGBT enabled the intro-
duction of the electronic ignition system for running spark plugs in the internal
combustion engine of gasoline-powered cars and trucks. The resulting 10% improve-
ment in fuel efficiency has saved consumers 1.8 trillion gallons of gasoline during the
last 30 years. The cumulative impact of these electrical energy and gasoline savings is a
cost savings of more than $32 trillion for consumers, and a reduction in carbon dioxide
emissions from coal-fired power plants by more than 150 trillion pounds. For this
achievement, he has been labeled the “man with the smallest carbon footprint on earth.”
Most recently, the IGBT has enabled the creation of very compact, lightweight, and
inexpensive defibrillators used to resuscitate cardiac arrest victims. Deployment of
these portable defibrillators in fire trucks, ambulances, buildings, and aircraft is pro-
jected by the American Medical Association (AMA) to save 100,000 lives per year
in the United States. In recognition of his work on the IGBT, Scientific American mag-
azine named him one of the eight heroes of the semiconductor revolution in their 1997
special issue commemorating the solid-state century.
Dr. Baliga is also the originator of the concept of merging Schottky and pn junc-
tion physics to create a new family of JBS power rectifiers that is commercially avail-
able from various companies. This concept, originally implemented for silicon
devices, has become an essential concept for the commercialization of silicon car-
bide high-voltage Schottky rectifiers since 2005.
In 1979, Dr. Baliga developed a theoretical analysis resulting in Baliga’s
Figure of Merit (BFOM), which relates the resistance within power rectifiers and
FETs to the basic semiconductor properties. He predicted that the performance of
Schottky power rectifiers and power MOSFETs could be enhanced by several orders
of magnitude by replacing silicon with other materials such as gallium arsenide and
silicon carbide. This is forming the basis of a new generation of power devices in the
21st century. These devices have been commercialized since 2010.
In August 1988, Dr. Baliga joined the faculty of the Department of Electrical and
Computer Engineering at North Carolina State University (NCSU), Raleigh, North
Carolina, as a full professor. In 1991, he established an international center called the
Power Semiconductor Research Center (PSRC) there for research in the area of
About the Author xxiii
power semiconductor devices and high-voltage integrated circuits, and served as its
founding director until 2001. His research interests include the modeling of novel
device concepts, device fabrication technology, and the investigation of the impact
of new materials, such as GaAs and silicon carbide, on power devices. The first high-
performance SiC Schottky rectifiers and power MOSFETs were demonstrated at
PSRC in the 1990s, resulting in the release of products by many companies during
the last 10 years.
In 2008, Prof. Baliga was a key member of an NCSU team—partnered with four
other universities—that was granted an Engineering Research Center from the
National Science Foundation, named FREEDM Center, for the development of
microgrids that allow the integration of renewable energy sources. Throughout this
10-year program, he was responsible for the fundamental sciences platform and the
development of power devices from wide-bandgap semiconductors for utility
applications.
In recognition of his contributions to NCSU, he was given the highest university
faculty rank of Distinguished University Professor of Electrical Engineering in 1997.
He was made the Progress Energy Distinguished University Professor of Electrical
Engineering in 2018.
Prof. Baliga has received numerous awards in recognition for his contributions to
semiconductor devices. These include two IR 100 awards (1983, 1984), the Dush-
man and Coolidge Awards at GE (1983), and being selected among the 100 Brightest
Young Scientists in America by Science Digest Magazine (1984). He was elected
Fellow of the IEEE in 1983 at the age of 35 for his contributions to power semicon-
ductor devices. In 1984, he was given the Applied Sciences Award by the sitar mae-
stro Ravi Shankar at the Third Convention of Asians in North America. He received
the 1991 IEEE William E. Newell Award, the highest honor given by the Power
Electronics Society, followed by the 1993 IEEE Morris E. Liebman Award for
his contributions to the emerging Smart Power Technology. In 1992, he was the first
recipient of the BSS Society’s Pride of India Award. At 45, he was elected as foreign
affiliate to the prestigious National Academy of Engineering, and was one of only
four citizens of India to have the honor at that time (converted to a regular member
in 2000 after taking US citizenship). In 1998, the University of North Carolina sys-
tem selected him for the O. Max Gardner Award, which recognizes the faculty mem-
ber among the 16 constituent universities who has made the greatest contribution to
the welfare of the human race. In December 1998, he received the IEEE J.J. Ebers
Award, the highest recognition given by the IEEE Electron Devices Society, for his
technical contributions to the solid-state area. In June 1999, he was honored at the
Whitehall Palace in London with the IEEE Lamme Medal, one of the highest forms
of recognition given by the IEEE Board of Governors, for his contributions to the
development of an apparatus/technology of benefit to society. In April 2000, he
was honored by his alma mater as a distinguished alumnus. In November 2000,
he received the R.J. Reynolds Tobacco Company Award for Excellence in Teaching,
Research, and Extension for his contributions to the College of Engineering at
NCSU. In 2011, Dr. Baliga was selected to receive the Alexander Quarles Holladay
xxiv About the Author
Medal for Excellence, which recognizes members of the NCSU faculty who over
their careers have made outstanding contributions to the university through their
research, teaching, and extension services.
In 1999, Prof. Baliga founded a company, Giant Semiconductor Corporation,
with seed investment from Centennial Venture Partners, to acquire an exclusive
license for his patented technology from NCSU with the goal of bringing his inven-
tions to the marketplace. A company, Micro-Ohm Corporation, subsequently formed
by him in 1999, has been successful in licensing the GD-TMBS power rectifier tech-
nology to several major semiconductor companies for worldwide distribution. These
devices have application in power supplies, battery chargers, and automotive elec-
tronics. One manufacturer states that this is the most successful new rectifier product
in the last 25 years. In June 2000, Baliga founded another company, Silicon Wireless
Corporation, to commercialize a novel superlinear silicon RF transistor that he
invented for application in cellular base stations, and grew it to 41 employees. This
company (renamed Silicon Semiconductor Corporation) received an investment of
$10 million from Fairchild Semiconductor Corporation in December 2000 to code-
velop and market this technology. Based upon his additional inventions, this com-
pany also produced a new generation of power MOSFETs for delivering power to
microprocessors in notebooks and servers. This technology was licensed by his com-
pany to Linear Technologies Corporation with transfer of the know-how and the
manufacturing process. Voltage regulator modules using these transistors are cur-
rently available on the market for powering microprocessor and graphics chips in
laptops and servers. NCSU conferred the Risley Entrepreneur of the Year Award
to Baliga in 2013 to recognize his entrepreneurial leadership.
In 2010, Dr. Baliga was inducted into the Engineering Design Magazine’s Engi-
neering Hall of Fame for his invention, development, and commercialization of the
IGBT, joining well-known luminaries (e.g., Edison, Tesla, and Marconi) in the elec-
trical engineering field. The award announcement states: “While working at General
Electric in the late 1970s, Baliga conceived the idea of a functional integration of
MOS technology and bipolar physics that directly led to the IGBT’s development…
it remains undeniable that Baliga’s vision and leadership played a critical role in
moving the IGBT from a paper-based concept to a viable product with many prac-
tical applications.”
President Obama personally presented Dr. B. Jayant Baliga with the National
Medal of Technology and Innovation, the highest form of recognition given by
the US government to an engineer, in a ceremony at the White House on October
21, 2011. Dr. Baliga’s award citation reads: “For development and commercializa-
tion of the Insulated Gate Bipolar Transistor and other power semiconductor devices
that are extensively used in transportation, lighting, medicine, defense, and renew-
able energy generation systems.”
In October 2012, Governor Beverly Purdue presented Dr. Baliga with the North
Carolina Award for Science. This is the highest award given by the state and the gov-
ernor to a civilian. On October 4, 2013, he was inducted into the Rensselaer Alumni
Hall of Fame by Rensselaer Polytechnic Institute President Shirley Jackson. The
About the Author xxv
ceremony included unveiling his portrait etched on a window in Thomsen Hall in the
Darrin Communications Center.
On August 23, 2014, Dr. Baliga received the IEEE Medal of Honor “For the
invention, implementation, and commercialization of power semiconductor devices
with widespread benefits to society” in a ceremony held in Amsterdam, The Neth-
erlands. This, IEEE’s highest award, has been given since 1917 to recognize great
achievements in the field of electrical engineering.
In 2015, Dr. Baliga was honored with the Global Energy Prize, considered the
Nobel Prize for energy, by the Russian Federation at a ceremony in St. Petersburg.
His citation states that the award is for the “For invention, implementation, and com-
mercialization of the Insulated Gate Bipolar Transistor—one of the most important
innovations for the control and distribution of energy.”
In 2016, Prof. Baliga was inducted into the National Inventors Hall of Fame as the
sole inventor of the insulated gate bipolar transistor. This invention was recognized,
with a display at a museum in Washington, DC, among one of the fewer than 600
patents chosen from more than 10 million patents issued by the US Patent and Tech-
nology Office.
In 2016, he was asked to be the chief guest at the Indian Institute of Technology—
Madras convocation, where he was conferred a Doctor of Science (Honoris Causa)
degree. In 2017, he was inducted into the National Academy of Inventors as an out-
standing academic inventor.
Foreword
When I joined the General Electric Company Research and Development (R&D)
Center in 1970, the world of power electronics was a completely different environ-
ment than exists today. There, I worked under the tutelage of some of the legends of
power electronics such as Bill McMurray, Bernie Bedford, Fred Turnbull, and many
others. This was still during the era of thyristor technology, dating from 1956, in
which the inverters of that time called upon the use of resonant circuits to turn off
the thyristors. The McMurray–Bedford inverter, the McMurray inverter, and the
Verhoef inverter were just some of the developments during this period. Because
of the numerous modes of operation (leading or lagging power factor, no load or full
load, low or high frequency, etc.), analyses of these circuits were at the same time
both a nightmare and a joy to those who loved to solve differential equations!
While some solutions for self-switching were being attempted at the time (e.g.,
FETs—small power only, Darlington BJTs—heavy monstrous bricks), they seemed
to be going nowhere. This era ended in the late 1970s when it was announced by
corporate management that a new switching device had been developed at the
R&D Center by Jay Baliga, which removed the need for the turnoff resonant circuit
and achieved turnoff with an FET-style gate pulse. By the mid-1980s, some of the
remaining problems with this device had been solved (latch-up and secondary break-
down) and a new era of power electronics was set in motion. In the last 30 years, we
have seen continuous expansion of insulated gate bipolar transistor (IGBT) technol-
ogy, with the aid of 6000 V devices, even into high-voltage DC applications. To
think that a turnoff device could ever make inroads into that last bastion of thyristor
technology, that is, HVDC power conversion, would make one’s head spin in 1970.
We have all benefitted greatly from Prof. Baliga and his contemporaries working in
the field of solid-state device technology. In this book, we learn from the master.
Thomas A. Lipo
University of Wisconsin, Madison, WI, United States
xxvii
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The Igbt Device Physics Design and Applications of The Insulated Gate Bipolar Transistor 2Nd Edition B Jayant Baliga Ebook Full Chapter

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Applications of the Insulated Gate

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3.3.4 Turn-Off Switching Waveforms ....................................... 68

CHAPTER 5 Chip Design, Protection, and Fabrication............. 153

CHAPTER 8 IGBT Circuit Models ........................................... 223

9.10.1 Motor Drive Topology .................................................. 280

10.6.3 Dual Utility Power Supply ............................................ 327

11.3.4 Conducted EMI.............................................................. 375

CHAPTER 13 IGBT Applications: Medical ................................ 441

CHAPTER 14 IGBT Applications: Defense ................................ 489

14.1.2 Naval Frequency Changers ........................................... 494

15.2.2HERIC PV Inverter ..................................................... 545

16.3.3 Static Synchronous Compensator.................................. 594

CHAPTER 18 IGBT Applications: Energy Storage ...................... 635

19.7 Pulsed Lasers .............................................................................669

20.3 Compact Fluorescent Lamps .....................................................722

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