2N2369, 2369A

High Speed Switching Transistors

Features:
• NPN Silicon Planar Epitaxial Transistors.
• Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
• 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power
and High Speed Switching Applications.

TO-18 Metal Can Package Dimensions Minimum Maximum

A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
Dimensions : Millimetres

Pin Configuration
1. Emitter
2. Base
3. Collector

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 2N2369, 2369A
High Speed Switching Transistors
Absolute Maximum Ratings
Parameter Symbol Value Unit
Collector Emitter Voltage VCEO 15
Collector Emitter Voltage VCES
40 V
Collector Base Voltage VCBO
Emitter Base Voltage VEBO 4.5
Collector Current Continuous IC 200
mA
Collector Current Peak (10µs Pulse) IC (Peak) 500
Power Dissipation at Ta = 25°C 360 mW
PD
Derate above 25°C 2.06 mW/°C

Power Dissipation at Tc = 25°C 1.2

PD W
Tc = 100°C 0.68
mW/°C
Derate above 100°C 6.85

Operating and Storage Junction Tj, Tstg -65 to +200 °C

Temperature Range

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Parameter Symbol Test Condition 2N2369 2N2369A Unit
Collector Emitter Voltage VCEO*(sus) IC = 10mA, IB = 0 >15
Collector Emitter Voltage VCES IC = 10µA, VBE = 0 >40
V
Collector Base Voltage VCBO IC = 10µA, IE = 0 >40
Emitter Base Voltage VEBO IE = 10µA, IC = 0 >4.5

VCB = 20V, IE = 0 <400 - nA

ICBO
VCB = 20V, IE = 0, Ta = 150°C <30 - µA
Collector Cut off Current
ICES
VCE = 20V, VBE = 0 - <400 nA

Base Current IB VCE = 20V, VBE = 0 - <400 nA

Collector Emitter Saturation Voltage
IC = 10mA, IB = 1mA <0.25 <0.20
IC = 30mA, IB = 3mA - <0.25
VCE(sat)*
IC = 100mA, IB = 10mA - <0.50
IC = 10mA, IB = 1mA, Ta = 125°C - <0.30

Base Emitter Saturation Voltage
IC = 10mA, IB = 1mA V
0.7 to 0.85 0.7 to 0.85
IC = 30mA, IB = 3mA - <1.15
VBE(sat)* IC = 100mA, IB = 10mA - <1.60
IC = 10mA, IB = 1mA, Ta = +125°C - >0.59
IC = 10mA, IB = 1mA, Ta = -55°C - <1.20

IC = 10mA, VCE = 1V 40 to 120 40 to 120

DC Current Gain hFE* IC = 10mA, VCE = 1V, Ta = -55°C >20 - -
IC = 100mA, VCE = 0.35V, Ta = -55°C - >20

*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%

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 2N2369, 2369A
High Speed Switching Transistors
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter Symbol Test Condition 2N2369 2N2369A Unit

IC = 10mA, VCE = 0.35V - 40 to 120

IC = 30mA, VCE = 0.4V - >30
DC Current Gain hFE* -
IC = 100mA, VCE = 1V - >20
IC = 100mA, VCE = 2V >20 -

Small Signal Characteristic

Transition Frequency ft VCE = 10V, IC = 10mA, f = 100MHz >500 MHz

Output Capacitance Cobo VCB = 5V, IE = 0, f = 140kHz <4.0 pF

IC = 10mA, IB1 = 3mA,
Turn on Time ton <12
IB = -1.5mA, VCC = 3V
IC = 10mA, IB1 = 3mA, ns
Turn off Time toff - <15
IB = -1.5mA, VCC = 3V
Storage time ts IC = 100mA, IB1 = IB = 10mA, VCC = 10V <13
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%

Specifications
VCE(sat) toff
VCEO IC hFE PD Package
maximum maximum
maximum maximum minimum at Ta = 25°C and Part Number
(V) (ns)
(V) (A) at IC = 10mA (mW) Pin Out
at IC = 10mA at IC = 10mA
0.25 2N2369
15 0.2 18 40 360 TO-18
0.20 2N2369A

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 2N2369, 2369A
High Speed Switching Transistors
Notes:

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