Faculty of Engineering

Electronics and communications Department

Electronics Devices (ELE 222) Sheet (2)
Sheet (2)

Q1. Sketch the load line of the circuit shown in figure 1, the intersections of the load line with
vertical and horizontal axes are:
A. 16 mA and 12 V B. 25 mA and 10 V
C. 6 mA and 15 V D. None of the above

Q2. The Q point of the circuit in figure 1 is

A. 15 mA and 0.85 V B. 25 mA and 10 V
C. 6 mA and 15 V D. None of the above

Figure (1)
Q3. The output voltage of the circuit shown in figure 2 is:
A. 9.17 V B. 0 V
C. 10 V D. None of the mentioned

Figure (2)

Q4. The values of ID and VO of the circuit in figure 3 are:

A. 2.25 mA and 5.3 V B. 0 mA and 8 V
C. 1 mA and 5 V D. None of the mentioned

Figure (3)

Q5. Assuming ideal diode in figure 4, the values of I and V are:

A. 0.225 mA, and 4.5 V B. 0 A, and -1.7 V
C. 6 mA, and 2 V D. None of the mentioned

Figure (4)
Q6. For the circuit in figure 5 with R=50KΩ, the diode current is
A. 0 mA B. 2.23 mA
C. 50 mA D. None of the mentioned

Q7. The nodes A and B voltages in figure 5 with R=50KΩ are

A. 9 V and 15V B. 0 V, 10V
C. 5V and 18V D. None of the mentioned

Q8. For the circuit in figure 5 with R=5KΩ and assuming ideal diode, the nodes A and B
voltages are
A. 5 V and 15 V B. 5 V, 9 V
C. 7.2 V and 7.2 V D. None of the mentioned

Figure (5)
Q9. For the circuit shown in figure 6
A. D1 is forward bias and D2 is forward bias
B. D1 is forward bias and D2 is reverse bias
C. D1 is reverse bias and D2 is forward bias
D. D1 is reverse bias and D2 is reverse bias

Q10. The values of I and V shown in figure 6 assuming ideal diodes are:
A. 1mA, and 5 V B. 0 A, and -1.7 V
C. 6mA, and 2 V D. None of the above

Figure (6)
Q11.The values of I and V shown in figure 7 are:
A. 3.3 mA, and 1.7 V B. 0 A, and 5 V
C. 6 mA, and 2 V D. None of the mentioned

Figure (7)

Q12. For each circuit shown in figure 8, determine the current I and the voltage V.

Figure (8)
Q13. Determine the current and the voltage across the diode in each circuit shown in figure 9

Figure (9)
Q14. Find values of the intrinsic carrier concentration ni for silicon at 70°C, 0°C , 20°C, 100°C,
and 125°C.

Q15. Contrast the electron and hole drift velocities through a 10 𝜇𝑚 layer of intrinsic silicon across
which a voltage of 1V is imposed. Let 𝜇𝑛 = 1350 𝑐𝑚2⁄𝑉𝑠 𝑎𝑛𝑑 𝜇𝑝 = 480 𝑐𝑚2⁄𝑉𝑠

Q16. Find the current flow in a silicon bar of 10 𝜇𝑚 length having a 5𝜇𝑚 × 5𝜇𝑚 cross section and
having free electron and hole densities of 105⁄𝑐𝑚3 𝑎𝑛𝑑 1015⁄𝑐𝑚3 , respectively, with 1V applied
end-to-end. Use 𝜇𝑛 = 1350 𝑐𝑚2⁄𝑉𝑠 𝑎𝑛𝑑 𝜇𝑝 = 480 𝑐𝑚2⁄𝑉𝑠

Q17. In a phosphorous doped silicon layer with impurity concentration of 1016⁄𝑐𝑚3. Find the
hole and electron concentration at 300 K and 400 K.
Q18. Both the carrier mobility and diffusivity decrease as the doping concentration of silicon is
increased. The following table provides a few data points for 𝜇𝑛 and 𝜇𝑝 versus doping
concentration. Use the Einstein relationship to obtain the corresponding value for Dn and Dp