AL MADINAH HIGHER INSTITUTE FOR ENGINEERING & TECHNOLOGY
• Digital Circuit Design
• Dr. Amaal Samir • Eng. Hadeer • Thrusdays from 9:00 am to 12:00 pm • amaalgex@yahoo.com • COURSE RULES: GRADES: 15 for quizes, 25 for Midterm, 20 for labs, and 40 for Final. LATE HW: ATTENDANCE: Absence for more three times will be removed from the subject.
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET Transistor Device Structure • The MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor.
• The MOSFET has two types:
1- n-channel MOS (NMOS) 2- p-channel MOS (PMOS)
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET Transistor Device Structure • The n-channel MOS has a p-type semiconductor substrate in which two n+ regions form the Source and the Drain. • The metal plate on thoxide is called the Gate.
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET Transistor Device Structure • The p-channel MOS has a n-type semiconductor substrate in which two p+ regions form the Source and the Drain. • The metal plate on thoxide is called the Gate.
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET Transistor
COMM 471 Dr. Amaal Samir Spring 2024
Depletion-mode N-channel MOSFET
COMM 471 Dr. Amaal Samir Spring 2024
Enhancement-mode N-channel MOSFET
COMM 471 Dr. Amaal Samir Spring 2024
Enhancement-mode N-channel MOSFET
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET Transistor
COMM 471 Dr. Amaal Samir Spring 2024
Inversion and Channel Formation
COMM 471 Dr. Amaal Samir Spring 2024
Saturation Mode
COMM 471 Dr. Amaal Samir Spring 2024
MOSFET I-V Characteristics
COMM 471 Dr. Amaal Samir Spring 2024
P-Channel MOSFET
COMM 471 Dr. Amaal Samir Spring 2024
Regions of Operation
COMM 471 Dr. Amaal Samir Spring 2024
DC Analysis of MOSFET • DC Analysis steps
COMM 471 Dr. Amaal Samir Spring 2024
DC Analysis of MOSFET
Example (1) Determine the minimum allowable value of W/L if M1 must not enter the triode region.
Welding for Challenging Environments: Proceedings of the International Conference on Welding for Challenging Environments, Toronto, Ontario, Canada, 15–17 October 1985