2-Pack IGBT

1400V
2MBI 50P-140 50A

IGBT MODULE ( P-Series ) n Outline Drawing

n Features
• Square SC SOA at 10 x IC
• Simplified Parallel Connection
• Narrow Distribution of Characteristics
• High Short Circuit Withstand-Capability

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1400 V
Gate -Emitter Voltage VGES ± 20 V
Continuous TC=25°C 75
IC
Continuous TC=80°C 50
Collector 1ms TC=25°C 150
IC PULSE A
Current 1ms TC=80°C 100
-IC 50
1ms -IC PULSE 100
Max. Power Dissipation PC 400 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. Vis 2500 V
Mounting *1 3.5
Screw Torque Nm
Terminals *2 3.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=1400V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 200 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=50mA 6.0 8.0 9.0 V
Tj= 25°C VGE=15V IC=50A 2.7 3.0
Collector-Emitter Saturation Voltage VCE(sat) V
Tj=125°C VGE=15V IC=50A 3.3
Input capacitance Cies VGE=0V 5000
Output capacitance Coes VCE=10V 750 pF
Reverse Transfer capacitance Cres f=1MHz 330
tON VCC=600V 1.2
Turn-on Time
tr IC=50A 0.6
µs
tOFF VGE=± 15V 1.0
Turn-off Time
tf RG=2,4Ω 0.3
Diode Forward On-Voltage VF IF=50A VGE=0V 2.4 3.3 V
Reverse Recovery Time trr IF=50A 350 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.31
Thermal Resistance Rth(j-c) Diode 0.66 °C/W
Rth(c-f) With Thermal Compound 0.05
 2-Pack IGBT
1400V
2MBI 50P-140 50A

Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
125 125

V GE= 2 0 V 1 5 V V G E= 2 0 V 1 5 V
100 100
[A]

[A]
12V
C

C
Collector Current : I

Collector Current : I
75 75 12V

11V
50 50
11V

10V
25 25
10V

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V]

Collector-Emitter vs. Gate-Emitter Voltage Collector-Emitter vs. Gate-Emitter Voltage

T j= 2 5 ° C T j= 1 2 5 ° C

10 10
[V]

[V]
CE

CE

8 8
Collector Emitter Voltage : V

Collector Emitter Voltage : V

6 6

4 4 IC= 1 0 0 A
IC= 1 0 0 A IC= 5 0 A
IC= 5 0 A IC= 2 5 A
2 2
IC= 2 5 A

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter Voltage : V G E [V] Gate-Emitter Voltage : V G E [V]

Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 6 0 0 V , R G = 2 4 Ω , V GE = ± 1 5 V , T j = 2 5 ° C V CC =600V, V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]

t on t on
1000 1000
tr tr

t off t off
on

on
Switching Time : t

Switching Time : t

100 100
tf tf

10 10
0 25 50 75 100 125 0 25 50 75 100 125

Collector Current: I C (A) Collector Current : I C [A]

 2-Pack IGBT
1400V
2MBI 50P-140 50A

Switching Time vs. R G

Collector Current vs. Collector-Emitter Voltage
V C C =600V, I C = 5 0 A , V G E= ± 1 5 V , T j = 2 5 ° C
10000 T j= 2 5 ° C
1000 25
ton
, t f [nsec]

[V]
tr V CC =400, 600, 800V

[V]
GE
800 20
t off

GE
Switching Time : t ,on t r, t off

1000

Collector-Emitter-Voltage : V

Gate-Emitter Voltage : V
600 15

tf
100 400 10

200 5

10
10 100 0 0
0 100 200 300 400
Gate Resistance : R G [ Ω ]
G a t e C h a r g e : Q g (nC)

Reverse Recovery Characteristics

Forward Voltage vs. Forward Current
t rr , I rr vs. I F
V GE= 0 V
125 1000
[nsec]
[A]

T j= 1 2 5 ° C 25°C
rr

100
[A]

rr
Reverse Recovery Current : I
F

Reverse Recovery Time : t

t rr = 1 2 5 ° C
Forward Current : I

75 t rr = 2 5 ° C
100

50

I rr = 1 2 5 ° C
25
I rr = 2 5 ° C

0 10
0 1 2 3 4 0 25 50 75 100 125

Forward Voltage : V F [V] Forward Current : I F [A]

Reverse Biased Safe Operating Area

Transient Thermal Resistance + V G E =15V, -V G E≤ 15V, T j≤ 125°C, R G ≥ 2 4 Ω
600
[°C/W]

500
0
10 SCSOA
[A]
th(j-c)

400 (non-repetitive pulse)

FWD
C
Collector Current : I
Thermal Resistance : R

IGBT 300

-1
10
200

100
RBSOA (Repetitive pulse)

-2 0
10 0 200 400 600 800 1000 1200 1400 1600
-3 -2 -1 0
10 10 10 10
Pulse Width : P W [sec] Collector-Emitter Voltage : V CE [V]
 2-Pack IGBT
1400V
2MBI 50P-140 50A

Switching Loss vs. Collector Current Capacitance vs. Collector-Emitter Voltage

V CC= 6 0 0 V , R G= 2 4 Ω , V GE= ± 1 5 V T j= 2 5 ° C
40 100
, E off , E rr [mJ/cycle]

, C oes , C res [nF]

E on 1 2 5 ° C
30
10
E on 2 5 ° C
C ies

ies
on

20

Capacitance: C
Switching Loss : E

1
E off 1 2 5 ° C
10 C oes
E rr 1 2 5 ° C
E off 25°C C res
E rr 25°C
0 0,1
0 25 50 75 100 125 0 5 10 15 20 25 30 35
Collector Current : I C [A] Collector Emitter Voltage : V CE [V]
For more information, contact:

Collmer Semiconductor, Inc.

P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.