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A PPM Gaussian Pulse Generator For Ultra-Wideband Communications
A PPM Gaussian Pulse Generator For Ultra-Wideband Communications
WIDEBAND COMMUNICATIONS
Sumit Bagga1, Giuseppe de Vita2, Sandro A. P. Haddad1, Wouter A. Serdijn1and John R. Long1
1 2
Electronics Research Laboratory, Universita’ di Pisa
Faculty of Electrical Engineering, Mathematics and Facolta’ di Ingenneria, Pisa,
Computer Science (EEMCS), Italy
Delft University of Technology, Delft, the Email: gi.devita@tiscali.it
Netherlands
Email:{s.bagga,s.haddad,w.a.serdijn} @ewi.tudelft.nl
169
cross-talk and to approximate an impulse-like waveform to Gaussian filter is implemented by using cascaded CFOS stages.
evoke the Gaussian monocycle. The pulse shaping network or
The modulator is composed of a variable slope generator xi
2
−Rσ Rω
and a comparator. The block scheme for the resulting UWB = 2 2 2 2
transmitter is depicted in Figure 3. ur 2 2 Rω Rσ C 2 Rω Rσ C
Rr (Rω + Rσ )( 2 2 s +2 2 2 s + 1) (8)
Rω + Rσ Rω + Rσ
variable triangular pulse
Clock slope comparator pulse shaping
generator generator network As illustrated by (7) and (8), the complex first-order system
does show similar characteristics of that of a second order
system and this confirms the statement made earlier. One also
Information
establishes the expressions for σ, ω and cr, which are,
Pulse
Modulator
Generator respectively:
Figure 3 UWB Transmitter
1 1 1
σ = ω = cr =
III. CFOS REALIZATION Rσ C
; Rω C
; Rr C
(9)
A complex first-order system (CFOS) is basically an Now going back to (2), one may validate the results
extension of an ordinary first-order to complex variables. Its obtained for σ, ω and cr. Considering the Laplace transform of
structure exhibits similar characteristics as an ordinary second the two functions shown in (10) and (11), it is unambiguous that
order system. Two real equations are used to express the the impulse response of the real output is equal to cr e −σt cos(ωt )
behavior of a CFOS instead of one complex equation [2]. and similarly, the impulse response of the imaginary output is
equal to cr e −σt sin(ωt ) .
d
x(t) = (σ + jω) x(t) + (cr + jci)u(t ) x(t ) = xr(t) + xi(t )
dt
(1) s
1+
−σt − crσ σ
where u is a real input signal, x is a complex state variable, L[cr e cos(ωt )] =
2 2 2
σ, ω, cr, ci are system parameters; σ = 0, ω > 0, ci and cr are ω +σ s
+2
σ
s +1
real numbers. Furthermore, the impulse response is represented 2 2 2 2
ω +σ ω +σ (10)
by the following equation.
(σ 0 +ω 0 j )t −1 −σt crω 1
h(t ) = (cr + jci )e U (t ) L[cre sin(ωt)] = −
2 2 2
(2) ω +σ s σ
2 2
+2
2 2
s +1 (11)
The output voltage, xr can be designed using an integrator ω +σ ω +σ
whose input current is the sum of u/Rr, -xi/Rω, and –xr/Rσ, From (2), the impulse response of a cascaded (n+1) CFOS
according to system is given by (12).
− xr − xi ur
xr = ∫ + + dt n
RσC R ωC RrC (3) n +1 t (σ + jω)t
h (t) = A(c + jc ) e U(t )
n +1 r i n!
Likewise, the output voltage xi can be written as: (12)
n
As one can deduce from the term t /n!, the more the
− xi xr ur
xi = ∫ + + dt number of stages, the better the approximation of the Gaussian
RωC RσC RiC (4) envelope.
Subsequently, one expresses the real (xr) and imaginary N+1
Rσ xr
xi = Figure 4 Cascaded CFOS
1 + RσC Rω
(6)
From (5) and (6) one easily calculates the transfer function
IV. CIRCUIT DESIGN
of the CFOS cell for the real and imaginary outputs, which are
given as follows. A. Pulse generator
2 a) gm-C cell CFOS
xr −Rσ Rω (1 + RσCs) To satisfy (5) and (6) and for high frequency applications,
= 2 2 2 2 one uses small and fast transition blocks such as gm-C cells.
ur 2 2 Rω Rσ C 2 Rω Rσ C
Rr (Rω + Rσ )( 2 + (7) This yields the circuit diagram depicted in Figure 5 [5].
2 s 2 2 2 s + 1)
Rω + Rσ Rω + Rσ However, due to the four cascaded transistor stages in the
feedback ring, the response time of the CFOS stage becomes too
170
large. Moreover, from simulations it follows that ten stages need 0< n <1 (12)
to be cascaded to achieve a reasonable approximation of the A significant improvement in the response time is seen
Gaussian envelope. As a result, the power consumption becomes because of the PPF loop. One could even use PMOS pull-ups as
too large. a positive feedback load to save power.
V-I Converter c) Triangular pulse generator
V R
cc r
R
o V in M1 M2
ur Vbias
V M3 M4
cc
Vout
I bias’
Ibias
R xr
V
w cc
B. Modulator
d) Variable slope generator and comparator
Variable slope
circuit
Figure 5 gm-C single stage CFOS
Threshold Threshold
Theshold
To solve this, a differential structure is used to get rid of the Variable Triggered
required inverters and thus enhance the response time of the Clock Slope Circuit ramp
Comparator
Pulse t
Comparator
CFOS. Output Bit ‘1’
positive feedback (PPF) [6] also satisfies equations (7) and (8). t1 t2 t
partial positive feedback
Ippf Ippf
I I
1 2
I bias Ibias
M2 R
1 R
2
Information Vout
Ini Inr Signal Vout
Vin M
1
M
2
M1
stage CFOS
The inclusion of the PPF stage as active load enhancement
not only increases the DC gain but also the unity gain frequency. Figure 9 a) variable slope generator b) comparator
The significant increase in the gain and the bandwidth is When designing a pulse position modulator, one exploits a
contributed to the increase in the effective transconductance of ramp, whose slope depends on the information signal. This
the stage. Let n be the loop gain, and then the gain of the signal is fed to a comparator which compares the momentary
amplifier is enhanced by a factor of 1/(1- n). When n tends to 1, value of the ramp with a fixed threshold and generates a trigger.
the gain tends to infinity. If n is made too large or too small, it The concept of having an edge with a varying slope and a
will either make the system unstable or have little to no effect on comparator yields a pulse position modulator (Figure 8) [7].
the performance of the amplifier at all. Thus, n should be
bounded by the following equation.
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The slope of the edge depends on the total current (I)
through the capacitance and the capacitance (C) [8] [9]. The
variable slope circuit is implemented using a capacitor charged
by a binary dc current. The resulting voltage is given by the
following equation.
I
Vout = t + V ( 0)
C
(13)
Switches S1 and S2 are implemented by simple NMOS
transistors. The circuit functions in the following manner.
Firstly, when the information signal is low, M2 is open. When Figure 10 Pulse position modulation of 1st derivative of
the clock signal is low (M1 open), capacitor C is charged by Gaussian monocycle
current I1 and thus the output edge has a slope with a definite
value. Secondly, when the information signal is high, M2 is VI. CONCLUSIONS
closed. When the clock signal is low (M1 open), capacitor C is
charged by a current I1+ I2 and thus now the output edge has a Given that all simulations were carried out in 0.35µm
steeper slope. Finally, S1 is closed to reset the variable slope CMOS technology, the target of achieving 200ps Gaussian
generator. As for the working of the comparator, when the input pulses was not feasible cause of the significant contribution of
signal is low, M1 is turned off, while M2 conducts with a gate- parasitic capacitances. The smallest possible pulse width
source voltage equals to VCC. This results in an output voltage attained was 230ps before layout extraction and roughly 300ps
VOUTL, given by: after layout extraction. The power consumption was
approximately equal to 95mW at a power supply of 3.3V. For
k2
VOUTL = VCC − R 2 (VCC − VT )2 modulation, a tunable pulse position modulator was designed in
2 (14) the same technology. Picoseconds and nanoseconds delays can
be obtained by using this programmable delay circuit.
where VT is the threshold voltage and k2 is defined as the
product of the transconductance coefficient and the aspect ratio
of the transistor (W/L). REFERENCES
Increasing the input voltage Vin beyond VT, M1 begins to
conduct and thus the gate-source voltage of M2 decreases. The [1] J. M. Wilson, “Ultra-Wideband/a Disruptive RF
drain current of M2 decreases and consequently, the output Technology?” Version 1.3, Intel Research and Development,
voltage, VOUT increases. For an input voltage equal to VINH, the September 10, 2002.
gate-source voltage of M2 becomes equal to its threshold voltage [2]H. Kanada, N. Aoshima, “Analog Gabor Transform
and thus M2 is turned off. Finally, VOUT becomes equal to VCC. Filter with Complex First Order System,” in Proc. SICE, 1997,
By increasing the input voltage even further, the gate-source pp. 925-930.
voltage of M2 decreases and so transistor M2 continues to stay [3] R. A. Scholtz, “Multiple Access with Time-Hopping
turned off allowing the output voltage to remain at VCC. Impulse Modulation,” Proc. MILCOM, Oct. 11-14 1993.
For VINH, it holds: [4] X. Chen, S. Kiaei, “Monocycle shapes for ultra
wideband system”, IEEE International Symposium on Circuits
2(VCC − VT ) and Systems (ISCAS 2002), Volume: 1, 2002 Page(s): 597 -600
VINH = VT + [5] B. Nauta, “A Transconductance-C Filter Technique for
R1k1
(15) Very High Frequencies,” IEEE J. of Solid-State Circuits, vol.
Similarly, k1 is the product of the transconductance 27, no. 2, pp. 142-153, Feb. 1992.
coefficient and the aspect ratio of the transistor (W/L). [6] R. Wang, R. Harjani, “Partial Positive Feedback for
The comparator threshold thus becomes: gain-Enhancement of Low-Power CMOS OTAs,” Analog
Integrated Circuits and Signal Processing, No. 8, pp. 21-35,
V * = VT +
(VCC − VT ) 1995.
2 R1k1
(16) [7] E. W. Justh, F. J. Kub, “Analogue CMOS continuous-
time tapped delay line circuit,” Electronic Letters, 12th October
1995, Vol. 31, No. 21.
V. SIMULATION RESULTS [8] H. C. Morgan, W. H. Boyd, “Transmission of
Electronic Information by Pulse Position Modulation Utilizing
Given that all simulations were carried out in AMS 0.35µm Low Average Power,” United States Patent, No. 5,586,145,
CMOS technology, the smallest possible pulse width attained is December 17, 1996.
230ps before layout extraction and 300ps after layout extraction [9] M. Saint-Laurent, M. Swaminathan, “A Digitally
when using a cascade of three CFOS stages. See Figure 10. Adjustable Resistor for Path Delay Characterization in High-
The power consumption is approximately equal to 95mW Frequency Microprocessors,” IEEE J. of Solid State Circuits,
at a power supply of 3.3V. By controlling currents I1 and I2, time 2002.
delays in the order of picoseconds to nanoseconds could be
achieved. Proper pulse position modulation is confirmed
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