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Vnq5e050ak-E - CONTROLADOR LUCES TOYOTA 2022
Vnq5e050ak-E - CONTROLADOR LUCES TOYOTA 2022
Features
Max supply voltage VCC 41 V
Operating voltage range VCC 4.5 to 28 V
Max on-state resistance (per ch.) RON 50 m
Current limitation (typ) ILIMH 27 A PowerSSO-24
■ General Application
– Inrush current active management by ■ All types of resistive, inductive and capacitive
power limitation loads
– Very low standby current
■ Suitable as LED driver
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions Description
– Very low electromagnetic susceptibility
The VNQ5E050AK-E is a quad channel high-side
– Compliance with European directive
driver manufactured using ST proprietary
2002/95/EC
VIPower™ M0-5 technology and housed in
– Very low current sense leakage PowerSSO-24 package. The device is designed
■ Diagnostic functions to drive 12 V automotive grounded loads, and to
– Proportional load current sense provide protection and diagnostics. It also
– High current sense precision for wide implements a 3 V and 5 V CMOS compatible
currents range interface for the use with any microcontroller.
– Current sense disable The device integrates advanced protective
– Off-state open-load detection functions such as load current limitation, inrush
– Output short to VCC detection and overload active management by power
limitation, overtemperature shut-off with
– Overload and short to ground (power
auto-restart and overvoltage active clamp.
limitation) indication
– Thermal shutdown indication A dedicated analog current sense pin is
associated with every output channel providing
■ Protections
enhanced diagnostic functions including fast
– Undervoltage shutdown detection of overload and short-circuit to ground
– Overvoltage clamp through power limitation indication,
– Load current limitation overtemperature indication, short-circuit to VCC
– Self limiting of fast thermal transients diagnosis and on-state and off-state open-load
– Protection against loss of ground and loss detection. The current sensing and diagnostic
of VCC feedback of the whole device can be disabled by
pulling the CS_DIS pin high to share external
– Overtemperature shutdown with auto
sense resistor with similar devices.
restart (thermal shutdown)
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 24
3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 24
3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 25
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.4 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4.1 Short to VCC and off-state open-load detection . . . . . . . . . . . . . . . . . . 27
3.5 Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 28
6 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
List of tables
List of figures
Signal Clamp
IN2 CH 1 CH 4
Channels 2, 3 & 4
VON
Limitation
IN3
Over Current
IN4 temp. Limitation
OFF State
CH 3
Open load
CS_
DIS
VSENSEH OUT4
CS1 OUT3
Current
CH 2
Sense OUT2
CS2
OUT1
CS3 OVERLOAD PROTECTION
LOGIC (ACTIVE POWER LIMITATION)
CS4
GND
VCC OUTPUT1
GND OUTPUT1
INPUT1 OUTPUT1
CURRENT SENSE1 OUTPUT2
INPUT2 OUTPUT2
CURRENT SENSE2 OUTPUT2
INPUT3 OUTPUT3
CURRENT SENSE3 OUTPUT3
INPUT4 OUTPUT3
CURRENT SENSE4 OUTPUT4
CS_DIS. OUTPUT4
VCC OUTPUT4
TAB = VCC
2 Electrical specifications
IS
VCC VFn
ICSD IOUTn
CS_DIS OUTPUTn VCC
VOUTn
IINn ISENSEn
VCSD INPUTn CURRENT
SENSEn
GND VSENSEn
VINn
IGND
Rthj-case Thermal resistance junction-case (with one channel ON) 2.8 °C/W
Rthj-amb Thermal resistance junction-ambient See Figure 36 °C/W
IOUT = 0.1 A;
Output voltage drop
VON Tj = -40 °C...150 °C 25 mV
limitation
(see Figure 8)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
IOUT = 0.05 A;
K0 IOUT/ISENSE VSENSE = 0.5 V; VCSD = 0 V;
1050 2110 3170
Tj = -40 °C...150 °C
IOUT = 1 A;
VSENSE = 4V; VCSD = 0 V;
K1 IOUT/ISENSE
Tj = -40 °C...150 °C 1510 1890 2650
Tj = 25 °C...150 °C 1510 1890 2270
IOUT = 1 A; VSENSE = 4 V;
Current sense ratio
dK1/K1(1) VCSD = 0 V; -13 13 %
drift
Tj = -40 °C to 150 °C
IOUT = 2 A;
VSENSE = 4 V; VCSD = 0 V;
K2 IOUT/ISENSE
Tj = -40 °C...150 °C 1600 1800 2230
Tj = 25 °C...150 °C 1600 1800 2000
IOUT = 2 A; VSENSE = 4 V;
(1) Current sense ratio
dK2/K2 VCSD = 0 V; -8 8 %
drift
Tj = -40 °C to 150 °C
IOUT = 4 A;
VSENSE = 4 V; VCSD = 0 V;
K3 IOUT/ISENSE
Tj = -40 °C...150 °C 1620 1770 1990
Tj = 25 °C...150 °C 1620 1770 1920
IOUT = 4 A; VSENSE = 4 V;
Current sense ratio
dK3/K3(1) VCSD = 0 V; -6 6 %
drift
Tj = -40 °C to 150 °C
IOUT = 0 A; VSENSE = 0 V;
VCSD = 5 V; VIN = 0 V; 0 1
Tj = -40 °C...150 °C
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
VIN
VOUT > VOL
VSENSEH
VCS
tDSTKON
90%
80%
dVOUT/dt(on) dVOUT/dt(off)
tr 10% tf
t
INPUT
td(on) td(off)
Figure 7. Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
VIN
tDSENSE2H
IOUT
IOUTMAX
90% IOUTMAX
ISENSE ISENSEMAX
90% ISENSEMAX
VCC-VOUT
Tj = 150 °C T = 25 °C
j
Tj = -40 °C
VON
IOUT
VON/RON(T)
2600
max Tj = -40 °C to 150 °C
2400
max Tj = 25 °C to 150 °C
2200
2000
typical value
1800
1600
1200
1 1,5 2 2,5 3 3,5 4
IOUT (A)
15
10
-5
-10
-15
-20
1 2 3 4
IOUT (A)
L L 0
Normal operation
H H Nominal
L L 0
Overtemperature
H L VSENSEH
L L 0
Undervoltage
H L 0
H X Nominal
(no power limitation)
Overload
H Cycling VSENSEH
(power limitation)
Short circuit to GND L L 0
(power limitation) H L VSENSEH
Open-load off-state
L H VSENSEH
(with external pull-up)
Short circuit to VCC
L H VSENSEH
(external pull-up
H H < Nominal
disconnected)
Negative output voltage
L L 0
clamp
1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents
and external circuit.
1 C C
2a C C
3a C C
3b C C
4 C C
(1)
5b C C
1. Valid in case of external load dump clamp: 40V maximum referred to ground.
2.4 Waveforms
Figure 11. Normal operation
Normal operation
INPUT
Nominal load Nominal load
IOUT
VSENSE
VCS_DIS
INPUT
Power Limitation
ILimH > Thermal cycling
ILimL >
IOUT
VSENSE
VCS_DIS
Intermittent Overload
INPUT
Overload
ILimH >
Nominal load
ILimL >
IOUT
VSENSEH>
VSENSE
VCS_DIS
INPUT
VOL
VOUT
IOUT
VSENSEH >
tDSTK(on)
VSENSE
VCS_DIS
Short to VCC
Resistive Hard
Short to VCC Short to VCC
IOUT
tDSTK(on) tDSTK(on)
VCS_DIS
TJ evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients TTSD
THYST
TR
TJ_START
TJ
Power Limitation
ILimH >
< ILimL
IOUT
4,5
600 Vin=2.1V
Off State 4
Vcc=13V
500 Vin=Vout=0V 3,5
3
400
2,5
300
2
200 1,5
1
100
0,5
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 19. Input clamp voltage Figure 20. Input low level
Vicl (V) Vil (V)
7 2
6,8 1,8
lin=1mA
6,6 1,6
6,4 1,4
6,2 1,2
6 1
5,8 0,8
5,6 0,6
5,4 0,4
5,2 0,2
5 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 21. Input high level Figure 22. Input hysteresis voltage
Vih (V) Vihyst (V)
4 1
0,9
3,5
0,8
3
0,7
2,5
0,6
2 0,5
0,4
1,5
0,3
1
0,2
0,5
0,1
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 23. On-state resistance vs Tcase Figure 24. On-state resistance vs VCC
Iout= 2A
120 Vcc=13V 80 Tc=150°C
Tc=125°C
90 60
Tc=25°C
60 40
Tc=-40°C
30 20
0 0
-50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40
Tc (°C) Vcc (V)
900
14
Vcc=13V
800
12 RI=6.5 Ohm
700
10
600
8 500
400
6
300
4
200
2
100
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
550
35
Vcc=13V
500 Vcc=13V
450 RI= 6.5 Ohm
30 400
350
25 300
250
20 200
150
15 100
50
10 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Figure 29. CS_DIS high level voltage Figure 30. CS_DIS clamp voltage
9
3,5
8 Iin = 1 mA
3
7
2,5
6
2 5
4
1,5
3
1
2
0,5
1
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
Vcsdl (V)
3
2,5
1,5
0,5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
3 Application information
VCC
Rprot CS_DIS
Dld
RSENSE RGND
VGND DGND
Cext
Equation 1
PD = (-VCC)2/RGND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are on in the case of several
high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Section 3.1.2: Solution 2: diode (DGND) in the
ground line.
Equation 2
Calculation example:
For VCCpeak = -100 V and Ilatchup 20 mA; VOHC 4.5 V
VCC
Main MOSn
41V
PU_CMD
Overtemperature
IOUT/KX
RPU
+
OL OFF
ISENSEH -
VOL ILoff2r
Pwr_Lim
CS_DIS OUTn ILoff2f
INPUTn
VSENSEH
CURRENT
SENSEn GND Load
RPROT RPD
To uC ADC
RSENSE
VSENSE
Equation 3
Equation 4
For the values of VOLmin,VOLmax, IL(off2)r and IL(off2)f see Table 10: Open-load detection
(8V<VCC<18V).
100
A
B
C
10
I (A)
1
0,1 1 L (mH) 10 100
VIN, IL
Note: Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4
area = 77 mm x 86 mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back
side), Copper areas: from minimum pad lay-out to 8 cm2).
Figure 36. Rthj-amb vs PCB copper area in open box free air condition (one channel ON)
RTHj_amb(°C/W)
55
50
45
40
35
30
0 2 4 6 8 10
PCB Cu heatsink area (cm^2)
Figure 37. PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON)
ZTH (°C/W)
1000
100 Footprint
2 cm2
8 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Note: The fitting model is a simplified thermal tool and is valid for transient evolutions where the
embedded protections (power limitation or thermal cycling during thermal shutdown) are not
triggered.
Z TH = R TH + Z THtp 1 –
where = tP/T
R3 (°C/W) 6
R4 (°C/W) 7.7
R5 (°C/W) 9 9 8
R6 (°C/W) 28 17 10
C3 (W.s/°C) 0.025
C4 (W.s/°C) 0.75
C5 (W.s/°C) 1 4 9
C6 (W.s/°C) 2.2 5 17
5.1 ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
A 2.45
A2 2.15 2.35
a1 0 0.1
b 0.33 0.51
c 0.23 0.32
D 10.10 10.50
E 7.40 7.60
e 0.8
e3 8.8
F 2.3
G 0.1
H 10.1 10.5
h 0.4
k 0° 8°
L 0.55 0.85
O 1.2
Q 0.8
S 2.9
T 3.65
U 1.0
N 10°
X 4.1 4.7
Y 6.5 7.1
Base q.ty 49
Bulk q.ty 1225
C Tube length (± 0.5) 532
B
A 3.5
B 13.8
C (± 0.1) 0.6
All dimensions are in mm.
A
Reel dimensions
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 24
Tape hole spacing P0 (± 0.1) 4
Component spacing P 12
Hole diameter D (± 0.05) 1.55
Hole diameter D1 (min) 1.5
Hole position F (± 0.1) 11.5
Compartment depth K (max) 2.85
Hole spacing P1 (± 0.1) 2
End
All dimensions are in mm.
Start
Top No components Components No components
cover
tape 500mm min 500mm min
Empty components pockets
saled with cover tape.
6 Order codes
7 Revision history
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