Types of Semiconductors

Semiconductors can be classified as:

1. Intrinsic Semiconductor.

2. Extrinsic Semiconductor.

Extrinsic Semiconductors are further classified as:

a. n-type Semiconductors.
b. p-type Semiconductors.

AEI105.120 1
Intrinsic Semiconductor

Semiconductor in pure
form is known as Intrinsic
Semiconductor.
Si Si Si
FREE ELECTRON Ex. Pure Germanium, Pure
Silicon.
Si Si Si
HOLE At room temp. no of
electrons equal to no. of
holes.
Si Si Si
Fig 1.

AEI105.120 2
Intrinsic semiconductor energy band diagram

Conduction Band

FERMI
Energy in ev

LEVEL

Valence Band
Fig 2.
Fermi level lies in the middle
AEI105.120 3
Extrinsic
Semiconductor

When we add an impurity to pure semiconductor to

increase the charge carriers then it becomes an Extrinsic
Semiconductor.

In extrinsic semiconductor without breaking the covalent

bonds we can increase the charge carriers.

AEI105.120 4
Comparison of semiconductors

Intrinsic Semiconductor Extrinsic Semiconductor

1. It is in pure form. 1. It is formed by adding
trivalent or pentavalent
impurity to a pure
semiconductor.

2. No. of holes are more in p-

2. Holes and electrons are type and no. of electrons
equal. are more in n-type.

AEI105.120 5
(Cont.,)

3. Fermi level lies in 3. Fermi level lies near

between valence and valence band in p-type and
conduction Bands. near conduction band in n-type.

4. Ratio of majority and 4. Ratio of majority and

minority carriers is minority carriers are equal.
unity.

AEI105.120 6
Comparison between n-type and p-type
semiconductors

N-type P-type
Pentavalent impurities Trivalent impurities are
are added. added.
Majority carriers are Majority carriers are
electrons. holes.
Minority carriers are Minority carriers are
holes. electrons.
Fermi level is near the
Fermi level is near the
valence band.
conduction band.

AEI105.120 7
N-type Semiconductor

When we add a pentavalent impurity to pure

semiconductor we get n-type semiconductor.

Pure
N-type
As si
Si
Fig 1.

AEI105.121 to 122 8
N-type Semiconductor

Arsenic atom has 5 valence electrons.

Fifth electron is superfluous, becomes free electron and

enters into conduction band.

Therefore pentavalent impurity donates one electron

and becomes positive donor ion. Pentavalent impurity
known as donor.

AEI105.121 to 122 9
P-type Semiconductor

When we add a Trivalent impurity to pure semiconductor

we get p-type semiconductor.

Pure
P-type
Ga si
Si
Fig 2.
AEI105.121 to 122 10
P-type Semiconductor

Gallium atom has 3 valence electrons.

It makes covalent bonds with adjacent three electrons of

silicon atom.

There is a deficiency of one covalent bond and creates a

hole.

Therefore trivalent impurity accepts one electron and

becomes negative acceptor ion. Trivalent impurity known
as acceptor.

AEI105.121 to 122 11
Carriers in P-type Semiconductor

In addition to this, some of the covalent bonds break due

temperature and electron hole pairs generates.

Holes are majority carriers and electrons are minority

carriers.

AEI105.121 to 122 12
 P and N type Semiconductors

Acceptor ion Donor ion

P N

- - - + + + +
-
- + + + +
- - -
- + + +
- -

Minority electron Majority holes Majority electrons Minority hole

Fig 3.
AEI105.121 to 122 13
Comparison of semiconductors

Intrinsic Semiconductor Extrinsic Semiconductor

1. It is in pure form. 1. It formed by adding trivalent or
pentavalent impurity to a pure
semiconductor.

2. Holes and electrons are 2. No. of holes are more in p-type

equal. and no. of electrons are more in
n-type.

3. Fermi level lies in between 3. Fermi level lies near valence

valence and conduction
Bands.
band in p-type and near
conduction band in n-type.

AEI105.121 to 122 14
Conduction in Semiconductors

Conduction is carried out by means of

1. Drift Process.

2. Diffusion Process.

AEI105.121 to 122 15
Drift process

A B
CB
VB

Fig 4. V

Electrons move from external circuit and in

conduction band of a semiconductor.

Holes move in valence band of a semiconductor.

AEI105.121 to 122 16
Diffusion process

Moving of electrons from

higher concentration
gradient to lower
concentration gradient is
known as diffusion
process.

X=a

Fig 5.
AEI105.121 to 122 17
 P and N type Semiconductors

P Acceptor ion Donor ion N

- - - + + + +
-
- + + + +
- - -
- + + +
- -

Minority electron Majority holes Majority electrons Minority hole

Fig 1.
AEI105.123 18
Formation of pn diode

Depletion Region

P N

- - - + + + +
-
- + + + +
- - -
- + + +
- -

Fig 2.
Potential barrier
Vb
AEI105.123 19
Formation of pn diode

A P-N junction is formed , if donor impurities are

introduced into one side ,and acceptor impurities
Into other side of a single crystal of semiconductor

Initially there are P type carriers to the left side of

the junction and N type carriers to the right side as
shown in figure 1

AEI105.123 20
 On formation of pn junction electrons from n-
layer and holes from p-layer diffuse towards the
junction and recombination takes place at the
junction.

And leaves an immobile positive donor ions at n-

side and negative acceptor ions at p-side.

AEI105.123 21
Formation of pn diode

A potential barrier develops at the junction whose

voltage is 0.3V for germanium and 0.7V for silicon.

Then further diffusion stops and results a depletion

region at the junction.

AEI105.123 22
Depletion region

Since the region of the junction is depleted of mobile

charges it is called the depletion region or the space
charge region or the transition region.

The thickness of this region is of the order of 0.5

micrometers

AEI105.123 23
Circuit symbol of pn diode

A K

Fig 3.
Arrow head indicates the direction of
conventional current flow.

AEI105.123 24
P-N Junction Diode- Forward Biasing

Fig. 1 P-N junction with FB

AEI105.124 25
Working of P-N Junction under FB

P N

Potential barrier
Fig. 2 Working of P-N junction
AEI105.124 26
Forward Bias
An ext. Battery applied with +ve on p-side, ve on n-
side.

The holes on p-side repelled from the +ve bias, the

electrons on n- side repelled from the ve bias .

The majority charge carriers driven towards the junction.

This results in reduction of depletion layer width and

barrier potential.

As the applied bias steadily increased from zero onwards

the majority charge carriers attempts to cross junction.

AEI105.124 27
 Holes from p-side flow across to the ve terminal on
the n-side, and electrons from n-side flow across to
the +ve terminal on the p-side.

As the ext. bias exceeds the Junction barrier potential

(0.3 V for Germanium, 0.7 V for Silicon ) the current
starts to increase at an exponential rate.

Now, a little increase in forward bias will cause steep

rise in majority current.

The device simply behaves as a low resistance path.

AEI105.124 28
Features:

Behaves as a low resistor.

The current is mainly due to the flow of majority carriers

across the junction.

Potential barrier, and the depletion layer is reduced

AEI105.124 29
P-N Junction Diode- Reverse Biasing

Fig.1 P-N Junction Diode with Reverse bias

(RB)
AEI105.125 30
P-N Junction working under reverse bias

P N

Fig.2 P-N Junction Diode working under RB

Potential barrier

AEI105.125 31
P-N Junction Diode- Reverse Bias

External bias voltage applied with +ve on n-side, ve on p- side.

This RB bias aids the internal field.

The majority carriers i.e. holes on p-side, the electrons on n-

side attracted by the negative and positive terminal of the
supply respectively.

This widens the depletion layer width and strengthens the

barrier potential.

AEI105.125 32
 Few hole-electron pairs are created due to thermal
agitation (minority carriers).

As a result small current flows across the junction called as

reverse saturation current I0 (uA for Germanium, nA for
Silicon).

Behaves as a high impedance element.

AEI105.125 33
 Further rise in reverse bias causes the collapse of
junction barrier called breakdown of the diode.

This causes sudden increase in flow of carriers across

the junction and causes abrupt increase in current.

AEI105.125 34
P-N JUNCTION

Fig 1.
AEI105.126 35
JUNCTION PROPERTIES

1. The junction contains immobile ions i.e. this region is

depleted of mobile charges.

2. This region is called the depletion region, the space

charge region, or transition region.

3. It is in the order of 1 micron width.

1. The cut-in voltage is 0.3v for Ge, 0.6v for Si.

AEI105.126 36
(Contd..)

5. The reverse saturation current doubles for every 10

degree Celsius rise in temperature.

6. Forward resistance is in the order ohms, the reverse

resistance is in the order mega ohms.

7. The Transition region increases with reverse bias this

region also considered as a variable capacitor and
known as Transition capacitance

AEI105.126 37
V-I Characteristics of P-N Junction Diode

Fig 2.
AEI105.126 38
 (Contd)

IF(mA)
Forward bias
Breakdown voltage

VR(V) VF(V)

Cutin voltage

Reverse Bias
IR(uA) Fig 3.
AEI105.126 39
 Resistance calculation

IF(mA)
Forward bias
Breakdown voltage

V
If
Vr I
VR(V) VF(V)
Vf
Ir Cutin voltage

Reverse Bias
IR(uA) Fig 4.
AEI105.126 40
Resistance calculation

Forward Resistance
1. Dynamic resistance (rf)= V/ I ..ohms.

Where V, I are incremental voltage and current values

on Forward characteristics.

2. Static resistance (Rf)= Vf /If ohms.

Where Vf, If are voltage and current values on Forward

characteristics.
AEI105.126 41
(Contd..)

Reverse Resistance:

Static resistance = Vr /Ir ohms

Where Vr, Ir are voltage and current values on Reverse

characteristics.

AEI105.126 42
Diode-Variants

Rectifier diodes: These diodes are used for

AC to DC conversion
Over voltage protection.
Signal diodes : Detection of signals in AM/FM Receivers.

Zener diode: Voltage Regulation purpose.

Varactor diode for variable capacitance

Electronic tuning commonly used in TV receivers.

AEI105.127 43
 (contd)
Light Emitting Diodes (LED) :
Display
Light source in Fiber optic comm.

Photo diodes : Light detectors in Fiber optic comm.

Tunnel diode: Negative resistance for Microwave oscillations

Gunn diode :Microwave Oscillator.

Shottkey diode: High speed Logic circuits

AEI105.127 44
Semiconductor diodes

Fig. 1 Diode variants Visual - 1

AEI105.127 45
 Specifications

1. Peak inverse voltage (PIV)

It is the max. voltage a diode can survive under reverse
bias.
2. Max. Forward current (If).
It is the maximum current that can flow through the diode
under forward bias condition.
3. Reverse saturation current (Io).
Amount of current flow through the diode under reverse
bias condition.

AEI105.127 46
Specifications (contd)

4. Max power rating (Pmax).

Maximum power that can be dissipated in the diode.

5. Operating Temperature (oC ).

The range of temperature over which diode can be
operated.

AEI105.127 47
Applications

1. Rectifier circuits for AC-DC Conversion.

2. Over voltage protection circuits.

3. Limiter, Clamping, voltage doublers circuits.

4. Signal detector in AM/FM Receivers.

5. In transistor bias compensation networks.

6. Digital Logic gates.

AEI105.127 48
ZENER DIODE

Invented by C.Zener.

Heavily doped diode.

Thin depletion region.

Sharp break down voltage called zener voltage Vz.

Forward characteristics are same as pn diode

characteristics.
AEI105.128 49
CIRCUIT SYMBOL

Anode cathode

Fig 2. Circuit symbol of zener diode

Arrow head indicates the direction of conventional

current flow.

Z symbol at cathode is a indication for zener diode.

AEI105.128 50
PHOTOS OF ZENER DIODES

K K
A A

Fig 3. photos of Zener Diodes

AEI105.128 51
PHOTOS OF ZENER DIODES

Fig. 4. Fig 3. photos of Zener Diodes

AEI105.128 52
EQUIVALENT CIRCUIT

In forward bias

Rf
Acts as a
closed
switch.

Ideal Practical
Fig 5. Equivalent circuit in forward bias
AEI105.128 53
EQUIVALENT CIRCUIT

in reverse bias

For the voltage

Acts as a
below break
open
down voltage Vz
switch

Fig 6. Equivalent circuit in reverse bias for voltage below Vz

AEI105.128 54
EQUIVALENT CIRCUIT

in reverse bias

RZ
For the
voltage Acts as a
above break constant
down voltage voltage
Vz Vz
Vz source

Ideal Practical
Fig 7. Equivalent circuit of zener diode for voltage above Vz
AEI105.128 55
ZENER BREAK DOWN

Break down in Zener Diode.

In heavily doped diode field intensity is more at

junction.

Applied reverse voltage setup strong electric field.

Thin depletion region in zener diode.

AEI105.129 56
 ZENER BREAK DOWN MECHANISM

Depletion Region

P N

- - - - + + + + +
-
- - - + + + + +
+
- - -
+ +
- - - - + +

Fig 1. Zener Break down Mechanism animated

AEI105.129 57
 ZENER BREAK DOWN MECHANISM

Depletion Region

P N

- - - - + + + + +
-
- - - + + + + +
+
- - -
+ +
- - - - + +

Fig 2. Zener Break down mechanism

AEI105.129 58
ZENER BREAKDOWN

Applied field enough to break covalent bonds in the

depletion region.

Extremely large number of electrons and holes

results.

Produces large reverse current.

Known as Zener Current IZ.

AEI105.129 59
ZENER BREAK DOWN

This is known as Zener Break down.

This effect is called Ionization by an Electric field.

AEI105.129 60
AVALANCHE BREAK DOWN

Break down in PN Diode.

In lightly doped diode field intensity is not strong

to produce zener break down.

Depletion region width is large in reverse bias.

AEI105.129 61
AVALANCHE BREAKDOWN MECHANISM

Depletion Region

P N

- - - + + + +
-
- - - + + + + +
+
- - -
- + +
- - - + +

Fig 3. Avalanche break down Avalanche

Incident Minority mechanism animated of charge
carriers AEI105.129 carriers 62
AVALANCHE BREAKDOWN MECHANISM

Depletion Region

P N

- - - + + + +
-
- - - + + + + +
+
- - -
- + +
- - - + +

Fig 4. Avalanche Break Avalanche

Incident Minority down mechanism. of charge
carriers AEI105.129 carriers 63
AVALANCHE BREAK DOWN

Velocity of minority carriers increases with reverse

bias.

Minority carriers travels with great velocity and

collides with ions in depletion region.

AEI105.129 64
AVALANCHE BREAK DOWN

Many covalent bonds breaks and generates more

charge carriers.

Generated charge carriers again collides with covalent

bonds and again generates the carriers

AEI105.129 65
AVALANCHE BREAK DOWN

Chain reaction established.

Creates large current..

This effect is known as Ionization by

Collision.

Damages the junction permanently.

AEI105.129 66
Differences between Zener and Avalanche
break downs.
1. Occurs in heavily doped 1. Occurs in lightly doped
diodes. diodes.

2. Ionization takes place by 2. Ionization takes place by

electric field. collisions.

3. Occurs even with less 3. Occurs at higher

than 5V. voltages.

4. After the breakdown 4. After breakdown voltage

voltage across the zener across the pn diode is
diode is constant. not constant.
AEI105.129 67
VI CHARACTERISTICS OF ZENER
DIODE

Voltage versus current characteristics of zener

diode.

Characteristics in forward bias.

Characteristics in reverse bias.

AEI105.130 68
FORWARD BIAS CHARACTERSTICS

Anode cathode

V
Fig 1. zener diode in forward bias

AEI105.130 69
 FORWARD BIAS
CHARACTERSTICS
IF(mA)

VF(V)

Cutin voltage
Fig2. Forward bias charactersticas of zener diode

AEI105.130 70
FORWARD BIAS CHARACTERSTICS

Characteristics same as pn diode.

Not operated in forward bias.

AEI105.130 71
REVERSE BIAS CHARACTERSTICS

Anode cathode

V
Fig 3. Zener diode in Reverse bias

AEI105.130 72
REVERSE BIAS CHARACTERSTICS

ZenerBreakdown

VR(V)

Vz

Reverse Bias

IR (uA)
Fig 4. Reverse Bias characterstics of zener diode
AEI105.130 73
 REVERSE BIAS CHARACTERSTICS

Always operated in reverse bias.

Reverse voltage at which current increases suddenly
and sharply
known as Zener break down voltage.
Zener break down occurs lower voltages than avalanche
break down voltage.
After break down the reverse voltage VZ remains
constant.

AEI105.130 74
 VI CHARACTERISTICS

Fig 5. VI characteristics of Zener diode

AEI105.130 75
 APPLICATIONS OF
ZENER DIODE

Used as voltage regulator.

Also used in clipper circuits

AEI105.130 76
 SPECIFICATIONS OF ZENER DIODE
Specifications of 1n746 zener diode.

Zener Voltage: 3.3V

Tolerance range of
zener voltage: +5% to +10%
Test current IZT: 20 mA
Maximum zener
Impedance ZZT: 28 ohms

AEI105.130 77
 SPECIFICATIONS OF ZENER DIODE
Specifications of 1n746 zener diode.

Maximum d.c. zener 110mA

current:
Reverse leakage 10uA
current Is:
Maximum power 500 mw up to 75 w
dissipation:

AEI105.130 78