Thyristors

Electronic Devices
Ninth Edition
Floyd
Chapter 11
Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
Thyristors
Thyristors are a class of semiconductor devices characterized

by 4-layers of alternating p- and n-material. Four-layer devices
act as either open or closed switches; for this reason, they are
most frequently used in control applications.
Some thyristors and their symbols are
(a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS
Summary
Thyristors
The concept of 4-layer devices is usually Anode

shown as an equivalent circuit of a pnp pn junction 1
and an npn transistor. Ideally, these
Q1
devices would not conduct, but when
forward biased, if there is sufficient pn junction
2
leakage current in the upper pnp device,
Q2
it can act as base current to the lower
npn device causing it to conduct and
pn junction 3
bringing both transistors into saturation.
Cathode
Summary
The Four-Layer Diode
The 4-layer diode (or Shockley diode) is a type of thyristor

that acts something like an ordinary diode but conducts in
the forward direction only after a certain anode to cathode
voltage called the forward-breakover voltage is reached.
The 4-layer diode has two leads, labeled the Anode (A) A
anode (A) and the cathode (K). The symbol p

reminds you that it acts like a diode. It does n
1
not conduct when it is reverse-biased. p

2
3
n
Cathode (K) K
Summary
The Four-Layer Diode
The characteristic curve for a 4-layer diode shows the

forward blocking region. When the anode-to-cathode
voltage exceeds VBR, conduction occurs. The switching
current at this point is IS.
IA
Once conduction begins, it
will continue until anode Forward-
conduction
current is reduced to less than On region
the holding current (IH). This IH
IS
is the only way to stop Off Forward-
VAK blocking
VBR(F)
conduction. 0
region
Summary
A
The SCR
The SCR had its roots in the 4-layer diode. By

adding a gate connection, the SCR could be
G
triggered into conduction. This improvement made
a much more useful device than the 4-layer diode.
K
The SCR can be turned on by
IA
exceeding the forward
breakover voltage or by gate IG2 > IG1 IG1 > IG0 I = 0
I H0 G0
current. Notice that the gate
I H1
current controls the amount
I H2
of forward breakover voltage VR VF
0 VBR(F 2) VBR(F1) VBR(F0)
required for turning it on. IR
Summary
The SCR
Like the 4-layer diode, the SCR will conduct as long as

forward current exceeds IH. There are two ways to drop the
SCR out of conduction: 1) anode current interruption
and 2) forced commutation. +V
Anode current can be interrupted by breaking the anode
current path (shown here), providing a path around the SCR,
IA = 0
or dropping the anode voltage to the point that IA < IH.
Force commutation uses an external circuit to momentarily RA
force current in the opposite direction to forward conduction.

SCRs are commonly used in ac circuits, which forces the G
SCR out of conduction when the ac reverses.
Summary
SCR Specifications
Three important SCR specifications are:

Forward-breakover voltage, VBR(F): IF
This is the voltage at which the SCR Characteristic
enters the forward-conduction region. for IG = 0
Forward-
Holding current, IH: This is the value of conduction
region (on)
anode current below which the SCR for IG = 0
switches from the forward-conduction IH
VBR(R)
region to the forward-blocking region. VR VF
0 VBR(F)
Reverse-
Gate trigger current, IGT: This is the blocking Forward-
Reverse- blocking
value of gate current necessary to switch avalanche
region
region (off)
the SCR from the forward-blocking region
region to the forward-conduction region IR

under specified conditions.
Summary
SCR Applications
SCRs are used in a variety of power control applications.

One of the most common applications is to use it in ac
circuits to control a dc motor or appliance because the
SCR can both rectify and control.
The SCR is triggered on the
I
positive cycle and turns off on R1
A
the negative cycle. A circuit
R2
like this is useful for speed R4
control for fans or power tools R3
B
and other related applications. M
Summary
SCR Applications
Another application for SCRs is in crowbar circuits

(which get their name from the idea of putting a crowbar
across a voltage source and shorting it out!)
The purpose of a crowbar SW Fuse
circuit is to shut down a power

DC
supply in case of over-voltage. power supply
VOUT
Once triggered, the SCR

D1
latches on. The SCR can
handle a large current, which D2
VTRIG
R1
causes the fuse (or circuit R2

R3
breaker) to open.
"Crowbar circuit"
Summary
A1
The Diac
The diac is a thyristor that acts like two back-to-back

4-layer diodes. It can conduct current in either
direction. Because it is bidirectional, the terminals are A2
equivalent and labeled A1 and A2. I F
The diac conducts current after the

breakdown voltage is reached. At that
point, the diac goes into avalanche IH
conduction, creating a current pulse VR
VBR(R)
VF
0 VBR(F)
sufficient to trigger another thyristor (an –IH
SCR or triac). The diac remains in

conduction as long as the current is
above the holding current, IH. IR
Summary
A1
The Triac
G
The triac is essentially a bidirectional SCR but the A2
anodes are not interchangeable. Triggering is done by
applying a current pulse to the gate; breakover triggering
is not normally used. IA
When the voltage on the A1

terminal is positive with respect
IH0 IG2 IG1 IG0
to A2, a gate current pulse will IH1
cause the left SCR to conduct. –VA
VBR(R0) VBR(R1) VBR(R2)
IH2
VA
VBR(F2) VBR(F1) VBR(F0)
When the anode voltages are –IH2
–IH1
reversed, the gate current pulse –IG0 –IG1 –IG2 –IH0
will cause the right SCR to

conduct. –IA
Summary
Triac Applications
Triacs are used for control of ac in applications like

electric range heating controls, light dimmers, and
small motors.
Triac on
Like the SCR, the RL
IL
triac latches after
triggering and turns A1 Delay
Vin angle
off when the current is
G Conduction
below the IH, which angle
A2
happens at the end of VG
each alteration.
Summary
The Silicon-Controlled Switch (SCS) Anode (A)

Anode
gate
The SCS is similar to an SCR but with Cathode
(G A)
two gates. It can be triggered on with a gate

(GK)
positive pulse on the cathode gate, and Cathode (K)
can be triggered off with a positive pulse
on the anode gate. +VCC
VGK GA
In this example, the SCS is controlling A
a dc source. The load is in the cathode VGA
GK
circuit, which has the advantage of
VL
one side of the load being on circuit K
ground. RL
Summary
B2
The Unijunction Transistor (UJT)

E
The UJT consists of a a block of lightly-doped
(high resistance) n-material with a p-material
grown into its side. It is often used as a trigger B1
device for SCRs and triacs. V E
The UJT is a switching device; Cutoff

Negative
resistance Saturation
VP
it is not an amplifier. When the Peak
point
emitter voltage reaches VP (the
peak point), the UJT “fires”,
going through the unstable Valley point
negative resistance region to VV
produce a fast current pulse.

IE
IP IV
Summary
The Unijunction Transistor (UJT)
The equivalent circuit for a UJT shows that looks like a

diode connected to a voltage divider. The resistance of the
lower divider (r’B1) is inversely proportional to the emitter
current. When the pn junction is first B 2
forward-biased, the junction

r′
resistance of r’B1 suddenly appears B2
to drop, and a rush of current occurs. E +

V
–
pn +
V BB
+ –
An important parameter is h, which is the VEB1 IE
– ηVBB
intrinsic standoff ratio. It represents the r′B1
ratio of r’B1 to the interbase resistance r’BB B1
with no current.
Summary
The Unijunction Transistor (UJT) Application
A circuit using a UJT to fire an SCR is shown. When the

UJT fires, a pulse of current is delivered to the gate of the
SCR. The setting of R1 determines when the UJT fires. The
diode isolates the UJT
from the negative part D
A
of the ac. R
R L
1
VE UJT
The UJT produces a fast,
reliable current pulse to RG SCR
B
the SCR, so that it tends
to fire in the same place C R2
every cycle.
Summary
A
The Programmable Unijunction Transistor (PUT)

G
The PUT is a 4-layer thyristor with a gate. It is
primarily used as a sensitive switching device.
The gate pulse can trigger a sharp increase in
current at the output. V (anode-to-cathode voltage)
K
AK
The characteristic of a PUT is

VP
similar to a UJT, but the PUT
intrinsic standoff ratio can be
“programmed” with external
resistors and the UJT has a VV
fixed ratio.
0 IP IV IA
(anode current)
Summary
The principle application for a PUT is for driving SCRs and

triacs, but, like the UJT, can be used in relaxation oscillators.
For the circuit to oscillate, R1 must be large +VCC
enough to limit current to less than the valley
current (IV). The period of the oscillations is
R1 R2
given by:
1
T  R1C ln
1 h
A
G
C R3
where K
R4
R3
h
R2  R3
Summary
What is intrinsic standoff ratio, and the period of the circuit?

+VCC
+20 V
R3 10 k
h   0.33
R2  R3 20 k + 10 k
R1 R2
1 220 k 20 k
T  R1C ln
1 h A
1 G
  220 k  0.01 μF  ln  0.89 ms R3
1  0.33 C
K 10 k
0.01 mF
R4
27 
What is the frequency? 1.12 kHz

Selected Key Terms
4-layer diode The type of 2-terminal thyristor that conducts

current when the anode-to-cathode voltage reaches
a specified “breakover” value.
Thyristor A class of four-layer (pnpn) semiconductor

devices.
SCR Silicon-controlled rectifier; a type of three

terminal thyristor that conducts current when
triggered by a voltage at the single gate terminal
and remains on until anode current falls below a
specified value.
Selected Key Terms
LASCR Light-activated silicon-controlled rectifier; a four

layer semiconductor device (thyristor) that
conducts current in one direction when activated
by a sufficient amount of light and continues to
conduct until the current falls below a specified
value.
Diac A two-terminal four-layer semiconductor device
(thyristor) that can conduct current in either
direction when properly activated.
Triac A three-terminal thyristor that can conduct current
in either direction when properly activated.
Selected Key Terms
SCS Silicon-controlled switch; a type of four-terminal

thyristor that has two gate terminals that are used
to trigger the device on and off.
UJT Unijunction transistor; a three terminal single pn
junction device that exhibits a negative resistance
characteristic.
PUT Programmable unijunction transistor; a type of
three terminal thyristor (physically more like an
SCR than a unijunction) that is triggered into
conduction when the voltage at the anode exceeds
the voltage at the gate.
Quiz
1. The 4-layer (Shockley) diode can conduct current if

a. the anode-to-cathode voltage exceeds VBR
b. a current pulse is applied to the gate
c. both a and b are correct
d. none of the above
Quiz
2. The SCR can conduct current if

a. the anode-to-cathode voltage exceeds VBR
b. a current pulse is applied to the gate
c. both a and b are correct
Quiz
3. A bidirectional thyristor is the

a. 4-layer diode
b. SCR
c. triac
d. silicon-controlled switch
Quiz
4. A thyristor that looks like two back-to-back 4-layer

diodes is the
a. SCR
b. triac
c. SCS
d. diac
Quiz
5. An SCR turns off when the

a. gate trigger current drops below a specified level
b. anode current drops below the holding current
c. both a and b are true
Quiz
6. The purpose of a crowbar circuit is to protect a load from

a. excessive ripple
b. low-voltage
c. over-voltage
d. all of the above
Quiz
7. A diac and triac are similar in that both devices

a. can use breakover triggering
b. can be used in ac circuits
c. are bidirectional
d. all of the above
Quiz
8. A device that has an unstable negative resistance region

is the
a. UJT
b. diac
c. triac
d. SCS
Quiz
9. The symbol for a silicon-controlled switch (SCS) is
(a) (b) (c) (d)
Quiz
10. A programmable unijunction transistor (PUT) is

“programmed” by choosing the
a. RC time constant
b. gate resistors
c. power supply voltage
d. cathode resistor
Quiz
Answers:
1. a 6. c
2. c 7. d
3. c 8. a
4. d 9. d
5. b 10. b

Thyristors

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Thyristors

Uploaded by

Copyright:

Available Formats

Electronic Devices

Thyristors are a class of semiconductor devices characterized

The concept of 4-layer devices is usually Anode

The Four-Layer Diode

The 4-layer diode (or Shockley diode) is a type of thyristor

anode (A) and the cathode (K). The symbol p

not conduct when it is reverse-biased. p

The Four-Layer Diode

The characteristic curve for a 4-layer diode shows the

The SCR had its roots in the 4-layer diode. By

Like the 4-layer diode, the SCR will conduct as long as

force current in the opposite direction to forward conduction.

SCR out of conduction when the ac reverses.

Three important SCR specifications are:

region to the forward-conduction region IR

SCRs are used in a variety of power control applications.

Another application for SCRs is in crowbar circuits

circuit is to shut down a power

Once triggered, the SCR

causes the fuse (or circuit R2

The diac is a thyristor that acts like two back-to-back

equivalent and labeled A1 and A2. I F

The diac conducts current after the

SCR or triac). The diac remains in

When the voltage on the A1

will cause the right SCR to

Triacs are used for control of ac in applications like

The Silicon-Controlled Switch (SCS) Anode (A)

two gates. It can be triggered on with a gate

The Unijunction Transistor (UJT)

device for SCRs and triacs. V E

The UJT is a switching device; Cutoff

produce a fast current pulse.

The Unijunction Transistor (UJT)

The equivalent circuit for a UJT shows that looks like a

forward-biased, the junction

to drop, and a rush of current occurs. E +

The Unijunction Transistor (UJT) Application

A circuit using a UJT to fire an SCR is shown. When the

The Programmable Unijunction Transistor (PUT)

The characteristic of a PUT is

The Programmable Unijunction Transistor (PUT)

The principle application for a PUT is for driving SCRs and

The Programmable Unijunction Transistor (PUT)

What is intrinsic standoff ratio, and the period of the circuit?

What is the frequency? 1.12 kHz

4-layer diode The type of 2-terminal thyristor that conducts

Thyristor A class of four-layer (pnpn) semiconductor

SCR Silicon-controlled rectifier; a type of three

LASCR Light-activated silicon-controlled rectifier; a four

SCS Silicon-controlled switch; a type of four-terminal

1. The 4-layer (Shockley) diode can conduct current if

2. The SCR can conduct current if

3. A bidirectional thyristor is the

4. A thyristor that looks like two back-to-back 4-layer

5. An SCR turns off when the

6. The purpose of a crowbar circuit is to protect a load from

7. A diac and triac are similar in that both devices

8. A device that has an unstable negative resistance region

9. The symbol for a silicon-controlled switch (SCS) is

(a) (b) (c) (d)

10. A programmable unijunction transistor (PUT) is

You might also like