EC 415 – VLSI Design

Anil Neerukonda Institute of Tech. &

Sciences
BiCMOS Process
BiCMOS Process
 N - well BiCMOS Fabrication
Process Steps

Delineate: to describe or mark the edge of something

 Diffusion
Diffusion is achieved by heating the wafer to a high
temperature and passing a gas containing the desired n –type
impurity (for example phosphorous, in the form phophine PH3)
(For Boron, it is Diborane B2H6)

Polysilicon with underlying thin oxide and the thick oxide act as
masks during diffusion – the process of self aligning
Diffusion
Diffusion
 Impurities
• Pentavalent impurity atoms have 5 valence electrons.
• The various examples of pentavalent impurity atoms
include Phosphorus (P), Arsenic (As), Antimony (Sb),
etc.
• Trivalent impurity atoms have 3 valence electrons.
• The various examples oftrivalent impurities include
Boron (B), Gallium (G), Indium(In), Aluminium (Al).
 Ion Implantation
• Diffusion and Ion Implantation are the methods by
which impurity is introduced into silicon to change its
resistivity. These processes allow the formation of
sources and drains of MOSFETs and active regions of
bipolar transistors
• Ion implantation is low-temperature process by
which ions of one element are accelerated into a solid
target
• It is normally used for three purposes
– Depletion mode device fabrication
– Threshold voltage adjustments
– Ultra shallow source and drain structures
 Ion Implantation system

Slit: a straight narrow cut or opening in something

 Ion implantation system
• Ion implantation equipment typically consists
of
– an ion source, where ions of the desired element
are produced
– an accelerator, where the ions are
electrostatically accelerated to a high energy
– a target chamber, where the ions impinge on a
target, which is the material to be implanted.
 Passivation / overglassing
• creating protective SiO2 layer on the wafer
surface.
• It protects the junction from moisture and
other atmospheric contaminants.
• It serves as an insulator on the water surface.
• A special mask would be required for the
overglassing process step
DICING
 Encapsulation
• Integrated circuit packaging is the final stage of
semiconductor device fabrication
• A tiny block of semiconducting material (die) is
enclosed in a supporting case
• Other names:
– Packaging or
– Semiconductor device assembly or
– simply assembly
• Encapsulation or seal
Die Attach and Wire Bonding

lead frame gold wire

bonding pad

connecting pin
 Encapsulation / Packaging
Package types
Package Types
 Final Test
After packaging, testing is
done before sending to
customers

Chips are electrically

tested under varying
environmental conditions.

Yield = Number of Good chips /

Total number of Chips per wafer
IC Operating Temperature range