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1 Nanomaterial Synthesis Methods
1 Nanomaterial Synthesis Methods
Ri-ichi Murakami
CNT Transistor
Lithography technology
Transistor
in Integrated circuit
Nowadays
~micrometer
CNT Transistor
Future
~nanometer
Biology
&
Medicine
Physics
&
Nano drug delivery Nano Chemistry
&
Materials
Mechanics
&
Electronics
Nano mechanics
The University of Tokushima
Approaches
Emergence and Challenges in Nanotechnology
Lithography technology
Lithography
• Bottom-up
Self-assembly
Lithography technology
• Homogeneous nucleation
A solution with solute exceeding the solubility or supersaturation possesses a high Gibbs free energy, the
overall energy of the system would be reduced by segregating solute from the solution.
G △G
GVS
△T GVL
T* Tm
• Homogeneous nucleation
For nucleus with a radius r > r*, the Gibbs free
energy will decrease if the nucleus grow. r* is
the critical nucleus size, △G* is the nucleation
barrier.
A B
Differenct reagents A weak reduction reagent
A:sodium citrate induces a slow reaction rate
B: citric acid and favors relatively larger
particles.
Lithography technology
Evaporation
energy
Source
P, the gas pressure;m, the particle mass; k, Boltzmann’s constant, 1.38×10-23 J/K; T, the temperature
The substrate should be placed at relactively low temperature to meet the supersaturation condition.
The impingement rate indicates the equilibrium process between evaporation and condensation.
J A z
J: flow density
A: area of the leak
z: implingement rate
This result is obtained under consideringt the adsorption and desorption effect.
Heater
Flash Evaporation
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Evaporation
Rod-Fed Source
Effusion
T1 T2 Cells
A B
Co-evaporation
quasiequilibrium
Liquid
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Evaporation source
• Open-Tube Effusion Cell
The relative beam intensity
of the open-tube effusion cell
calculated for various tube
length-to-tube radius ratios
a
(L/a)
Plasma-enhanced chemical vapor depostion is a process used to deposit thin films from a gas state
(vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur
after creation of a plasma of the reacting gases. The plasma is generally created by RF (AC)
frequency or DC discharge between twoelectrodes, the space between which is filled with the
reacting gases. A plasma is any gas in which a significant percentage of the atoms or molecules are
ionized. Fractional ionization in plasmas used for deposition and related materials processing varies
from about 10−4 in typical capacitive discharges to as high as 5–10% in high density inductive
plasmas.
condensation re-evaporation
film growth
film
adsorption surface
at special sit nucleation
diffusion
Inter diffusion
Adsorption of atoms from gaseous phase
Cluster formation
Critical size islands growth
Coalescence of neighboring islands
Percolation of islands network
Continuous film growth
• Adsorption
It is defined as chemisorption
coefficient that he fraction of
adsorbated atoms transferred from
physisorption into chemisorption but
gas not re-evaporated.
physisorption
An critical condition is that the
adsorption is equall to the
Van der Waals force reevaporation.
transition re-evaporation Only the atoms adsorpted on
chemical bond the substrate and condensed,
chemisorption grow bigger the critical radius,
then the film would be deposited.
substrate
• Condensation coefficient
jc ac ji
re-evaporation
• Deposition Rate
Growth speed
The deposition rate, or the growth speed
Si jc
vn jc, the condensation flux
nf nf, the particle density,
how many particles per volume
An example
8 atoms per conventional unit cell
The volume per unit cell, (5.430 A)3=160.10 A3
The particle density, 8/(160.10 A3)=0.05 A-3
The growth speed
jc 0.703 A2 / s
a
5.430A
vn 3
14.06 / s
nf 0.05 A
cubic lattice parameter, 5.430 A
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Condensation
• Growth mode
Lithography technology
Lithographic techniques
(a)Photolithography
(b)Phase shifting opitcal lithography
(c)Electron beam lithography
(e)Focused ion beam lithography
(f) Neutral atomic beam lithography
• Wafer is held on a spinner chuck by vacuum and resist is coated to uniform thickness by spin coating.
• Typically 3000-6000 rpm for 15-30 seconds.
• Resist thickness is set by:
– primarily resist viscosity
– secondarily spinner rotational speed
• Resist thickness is given by t = kp2/w1/2, where
– k = spinner constant, typically 80-100
– p = resist solids content in percent
– w = spinner rotational speed in rpm/1000
• Most resist thicknesses are 1-2 mm for commercial Si processes
Used to evaporate the coating solvent and to densify the resist after spin coating.
• Typical thermal cycles:
– 90-100°C for 20 min. in a convection oven
– 75-85°C for 45 sec. on a hot plate
• Commercially, microwave heating or IR lamps are also used in production lines.
• Hot plating the resist is usually faster, more controllable, and does not trap solvent like convection oven baking.
PMMA (Poly-methyle-metacrylate)
-one of the first e-beam resists (1968)
-standard positive resist
-resolution<10 nm
-medium sensitivity (150-300μC/cm2 )
-available with high (950K) and low (50k) molecular weight
-contrast: high for 950k-resist, low for 50k-resist
• Advantages
-Ions have heavy mass than electrons.
-Less proximity effect than E-beam
-Less scattering effect
-High resolution patterning than UV, E-beam lithography
-Even smaller wavelength than E-beam
• In neutral atomic beams, no space charge effects make the beam divergent;
therefore, high kinetic particle energies are not required. Diffraction is no severe limit
for the resolution because the de Broglie wavelength of thermal atoms is less than 1
angstrom.
Nanomanipulation and
nanolithography are
based on scanning probe
microscopy.
Principle
A famous sample
• Some examples
1. Flash Evaporation
2. E-Gun
3. Covaporation
4. Sputtering
No
Because of the different impingement rate
for each element at the same vacuum
condition