PECVD

PSG – Phosphorus
silicate glass

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Content
 Solar cell line overview 3

 Introduction 6

 Purpose 8

 Machine overview 11

 Work Flow 16

 Work Activity 22

 Process Control 24

 Process Vs. Electrical parameters 26

 Critical Parameters 2
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Solar Cell Line Process Flow

Intex Diffusion PSG PECVD

Printers Fast firing Tester Sorter

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Introduction

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Introduction- PSG & EI
Phosphorus silicate glass (PSG) Layer:
PSG layer gets generated on the wafer surface, as a result of the reaction between POCl 3 and
oxygen during diffusion process.

PSG Formation process:

POCl3(liquid)+N2(bubble) POCl3(vapour)

4POCl3+3O2 2P2O5+ 6Cl2 Deposition

2P2O5+5Si 4P+5SiO2 Drive in

SiO2+P2O5 P2O5.SiO2 (glass)

Edge Isolation
Removal of Conductive Layer for Separation of Edge Isolation:
p-base and n-emitter layer Removal of
conductive layer

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Purpose ???

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Motivation

PSG Removal

 PSG absorbs light- reduction in efficiency

 PSG is hydrophilic- attracts water and reduces module lifetime
 If PSG layer is not removed properly then Isc and Voc decreases

Edge Isolation

 Edges and rear side also doped with P– short circuit(shunt)

 Edge Isolation –Required to Eliminate shunting path between
emitter and Base.

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Purpose of PSG & EI

Edge Isolation n-emitter p-base PSG layer

n-emitter p-base PSG layer

Separation of P Base and N-

emitter, so that the front emitter
is isolated from the cell rear.

PSG Removal
Removal of the phosphorus-silicate
glass layer formed during Diffusion n-emitter p-base PSG layer n-emitter
p-base

Process.

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Overview

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Machine Overview

PSG

Process in
Loading Chemical Baths unloading

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0
Machine Overview- Loader

Ensure Diffused side of wafer facing up in magazine.

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Machine Overview -Process Baths

 Ensure Diffused side of wafer facing up during PSGEE process

 Ensure DI masking working properly

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Machine Overview -Unloader

 Need to monitor and control Rejection at Unloader

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Workflow……..

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Workflow- Process Flow Diagram

DI
Loader HF/HNO3 RINSE KOH RINSE HF RINSE DRYER Unloader
Capping

DI capping
porous
layer on Edge PSG layer
silica
wafer Isolation removal
surface removal

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DI Capping
Purpose
• Masking with DI to protect emitter layer.
• Uniform DI protective layer on the wafer surface
• Emitter (n-layer) always facing towards top.

DI spray system

Water layer
Wafer
Transport rollers

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 Etch Bath
Purpose
• Isolation of n-emitter and p-base layer.

Bath composition:
HF:HNO3:DI

Interaction process
• DI capped wafer move on roller with emitter on top.
• Chemical touches only wafer bottom and edges.
• No contact with emitter on top side of wafer.

Vol HF:HNO3  ~1:5

Temperature  ~12-15oc
Conveyor speed  ~1-2 m/min

Etch Bath Reactions:

a. Si + 4 HNO3→ SiO2 + 4 NO2 + 2 H2O
b. SiO2 + 4 HF → SiF4 + 2 H2O (Etching of SiO2 with HF)

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KOH Bath

Purpose:
• Removal of porous silicon from the etched surface.
• Decrease silicon porosity.

Bath Composition

• KOH (5% by Volume)

• Temp : 25C

Interaction process
• Wafer moves in the bath with emitter on top.
• Wafer is completely immersed in the bath.

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HF Bath
Purpose
• Removes PSG dead layer(inactive phosphorous) from the wafer surface.
Bath Composition
• HF – ~6% by Volume
• Temp – 25C
Interaction process
• Wafer moves in the bath with emitter on the top.
• Wafer is completely immersed in chemical bath.
• HF reacts very fast with PSG (SiO2) layer.
• Lower concentration of HF required

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Work Activity

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Work Activity
• Verify the Rejections/ Breakages before Loading.
• Verify Loading Procedure (Diffused Side should be up).
• Monitor Alarms and take actions to resolve the problem .
• Monitor Loading Unloading station.
• Continues monitor of Wafer transportation to avoid wafer jam.
• Maintain the yield.
• Analyse breakage/Rejections and find root cause.
• Wafer sampling to validate the process.
• Maintain SPC (Statistical Process Control) to monitor and control the process.
• Maintain the daily reports and ISO documents required.

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Process Control
Control Parameter: Etch Rate and PSG Removal (Emitter Rsh)

 Optimum Etch Rate is required to ensure Edge isolation is done completely to avoid
Lower Rsh and efficiency deterioration problem.

 Optimum Removal of PSG is required to ensure PSG layer is removed Completely. Post
PSG Process, Emitter Rsheet should be ~ 5-6 ohm/sq higher than RSh of post Diffusion
process.

 Higher Temperature, Chemical Concentration and Circulation Speed of Etch Bath (HF-
HNO3) and Lower Conveyor Speed - Higher Etch Rate

 Higher Conductivity and temperature of HF bath – Higher Removal Rate of PSG from
emitter Surface

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Process Optimization

Process Control Parameter :

 Etch Rate (Si Removal) for Edge Isolation
 Sheet Resistance (Ohm/Square) to ensure PSG removal -R sheet should
be 5-6 ohm/sq higher than diffused wafer.

Control Methodology:
 Chemical Dosing Etch Depth PSG Removal
 Roller Speed Speed Etch Depth PSG Removal
 Bath Temperature Temp Etch Depth PSG Removal
 Surface Monitoring

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Process Vs. Electrical parameters

 When Etched too little → Edge not isolated properly

Etch
Rsh
Depth

 When etched too much → Edge isolation high

Rsh
Etch (At Optimum
Depth level)

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Process Vs. Electrical parameters

 When HF conc. Is too low → PSG layer not removed properly

HF conc.
Isc
Rs

 When HF conc. too much → PSG layer removed properly

Rs
HF conc. Isc

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Critical Parameters

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PSG -Critical parameters
Critical parameters should be monitored and controlled as per process requirement:
Etch Depth- Removal of the silicon.
Etch Depth = (Initial weight-final weight)/(Si density* area )
Si density-2.33 g/cm2, Area-(156*156)mm2
Etch Depth depends upon the following machine parameters :-
•Temperature : Temperature high  Etching Increases.
•Transport Speed : Transport Speed Increases  Etching Decreases
•Chemical concentration: Chemical Conc. Increases  Etching Increases
• If the measured Etch value is not within the control limits take suitable action and play with critical
parameters.

PSG Removal (Rsh)

• After PSG removal, Rsh should be 5-6 ohm/sq higher than diffused wafer.

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Defects

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Defects
1. PSG Not Removed

Causes:
• Low chemical concentration.
• Low bath level.

Remedies:
• Check bath level and chemical concentration.

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Defects
2. Chemical Marks

Causes:
• Wafer breakage on wafer.
• Wafers Jam (Overlap wafers).

Remedies:
• Ensure regularly for no breakages in bath/rollers.
• Ensure no wafers jam during processing.

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Defects
3. Hand touch

Causes:
• Contact with bare hands
• Oil on the gloves.

Remedies:
• Avoid wafer handling bare handed.
• Change gloves after regular interval.
• Avoid glove touch with body parts
• Proper handling of wafer i.e. hold wafers from edges.

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Defects
4. Emitter damaged/ etched

Causes:
• Di capping absent.
• Bath vibrations and chemical reaches on emitter
• Bath level high
Remedies:
• DI layer presence on wafer surface.
• Bath level only touches rear and edges.
• Control bath flow rate as chemical may reach on top/emitter due to
vibrations.

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PSG –SPC!!!

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SPC PSG

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Any Question???

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Thank you

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