Chapter 4

BIPOLAR JUNCTION
TRANSISTOR

CO4 - Identify and solve the bipolar junction transistor (BJT)

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 4.0 Introduction
●
Transistor are semiconductor devices use for a wide variety of
electronic purposes, but mainly for either amplification or switching.

●
There are two types of transistor are available in both discrete and
integrated circuit: BJT and FET.

●
The famous and commonly use of this device is BJTs (Bipolar
Junction Transistors).

●
It can be use as amplifier and logic switches.

●
BJT consists of three terminal:
collector : C
base : B
emitter : E
●
Two types of BJT : pnp and npn

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 4.1 Construction and Symbols
There are two types of transistors: (a) pnp and (b) npn-type.

C C

p n
B B
n p
p n

E E
(a)
C C

B B
pnp npn

E E
(b)
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 4.2 OPERATION OF BJT
• A single pn junction has two different types of bias:
- forward bias
- reverse bias

• A two pn-junction device has four types of bias.

• The transistor operation is referred to the biasing

combinations as below:

Mode operation BE Junction BC Junction Application

Active Forward Reverse Amplifier

Cutoff Reverse Reverse Switch

Saturation Forward Forward Digital Circuits

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5
 Transistor as an amplifier

The transistor operate when it is in active operation meaning that the

BE junction must be forward biased and CB junction in reverse biased.

Figure Shown an application of both biasing potentials resulting

majority-and minority-carrier flows in pnp transistor.

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• Transistor currents :
C • Notes:
I C I
C C
B B * The arrow is always drawn
on the emitter
I I I
B
E I B E E
* The arrow always point
E
toward the n-type
pnp npn * The arrow indicates the
IC=the collector current direction of the emitter current
IB= the base current - pnp: E-B
- npn: B-E
IE= the emitter current

RELATION CURRENT;
IE = IC + IB

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 4.3 TRANSISTOR CONFIGURATION
• There are 3 types of connection transistor or configuration
in electric circuit:
a) CB (common base)
b) CE (common emitter)
c) CC (common collector)

• This configuration is base on which the terminal is

connected to the input signal and output signal.

• Table below shows the relationship between input signal and

output signal with the transistor configuration.
Configuration Input terminal Output terminal
CB E C
CE B C
CC B E
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Common-base configuration (CB)
• Figure below shows the common-base configuration for pnp
and npn transistor.

• CB is derived from the fact that the :

- base is common to both i/p and o/p of the configuration.
- base is usually the terminal closest to or at ground potential.
C
Vcc IC Vcc C IC
B B
IB VEE
VEE IE IB IE
E E

pnp
npn
Symbols used with the CB configuration

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Input characteristics for a Output characteristics for a
common-base common-base

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 Common-emitter configuration (CE)
• It is called common-emitter configuration since :
- emitter is common or reference to both i/p and o/p
terminals.
- emitter is usually the terminal closest to or at ground
potential.

• Almost amplifier design is using connection of CE

due to the high gain for current and voltage.

• Two set of characteristics are necessary to describe the

behaviour for CE ;input (base terminal) and output (collector
terminal) parameters.

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Proper Biasing common-emitter configuration in active region

C IC

n
IC
p
IB B VCC
n IB VCC
VBB
VBB
IE E IE

(a) npn transistor configuration

C IC
IE  IC  IB
IC
p
IB
n VCC
IB B VCC
p
VBB
VBB IE
IE E

(b) pnp transistor configuration

Common-emitter configuration

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 Characteristics of Common-Emitter

(a) - Collector characteristics = output characteristics.

(b) - Base characteristics = input characteristics.
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Common-collector configuration (CC)

• Also called emitter-follower.

• It is called common-emitter configuration since both the

signal source and the load share the collector terminal as a
common connection point.

• The o/p voltage is obtained at emitter terminal.

• The input characteristic of CC configuration is similar

with CE configuration.

• All the current relationship for CE configuration are true for

CC configuration.

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 C IC IC

n IB VEE
IE
p
IB B VBB
n VEE
Vout
VBB
IE
E

(a) npn transistor configuration

C IC IC

VBB IB VEE
p
IE
n
IB B
p VEE
Vout
VBB
IE
E

(b) pnp transistor configuration

Fig 4.8 : Common-collector configuration

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Characteristics of Common-Collector

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4.4 Amplifying Action (effect of Beta and Alpha)

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18
Relationship Between Amplification Factor

1-α

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 4.5 Limits of operation for transistor

• Many BJT transistor used as an amplifier. Thus it is

important to notice the limits of operations.

• At least 3 maximum values is mentioned in data sheet. There are:

a) Maximum power dissipation at collector: PCmax or PD
b) Maximum collector-emitter voltage: VCEmax sometimes named as
VBR(CEO) or VCEO.
c) Maximum collector current: Icmax

• There are few rules that need to be followed for BJT transistor used
as an amplifier. The rules are:
i) transistor need to be operate in active region!
ii) IC < ICmax
ii) PC < PCmax

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 Transistor limits of operation (cont.)

Note:
•VCE is at maximum and IC is at minimum (ICmax=ICEO) in the cutoff region.
•IC is at maximum and VCE is at minimum (VCEsat ) in the saturation region.
•The transistor operates in the active region between saturation and cutoff.
•PDmax is usually specified at 25°C.
•The higher temperature goes, the less is PDmax
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Example:
The parameters of transistor 2N3055 as follows: The maximum value of
power dissipation is 80 mW, Ic max = 10mAand Vce max = 40 V. Find
the set of new IC if VCE=10V, 20 V and 30 V. Sketch the active region for
graph below.
IC(mA)

IB=60 uA
18
IB=50 uA
15
IB=40 uA
12
IB=30 uA
9

6 IB=20 uA

IB=10 uA
3
IB=0 uA
VCE(V)
10 20 30 40
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 IC(mA)

IB=60 uA
18
IB=50 uA
15
IB=40 uA
12
D
Ic max IB=30 uA
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C
6 IB=20 uA
Vce max
B IB=10 uA
3
A
IB=0 uA
VCE(V)
Solution: 10 20 30 40

Ic max = 10 mA so Vce = 80m/10 = 4 V (point D)

IC = PCmax / VCE=80m/10 = 8 mA (point C)

IC = PCmax / VCE=80m/20 = 4 mA. (point B)

IC = PCmax / VCE=80m/40 = 2 mA (point A)

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Transistor Specification Sheet

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