Electrical Devices & Circuits

EEE-0103 | EEE – 205

Lecture - 05

Jubayer Al Mahmud
Lecturer
State University of Bangladesh
 Outline
• Introduction to transistors
• Formation of transistors
• Types of transistors
– BJT
• PNP
• NPN
– FET
• Formation of PNP BJT
• Formation of NPN BJT

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 Introduction to Transistors
• The Transistor was invented in 1947 by Dr. John Bardeen,
Dr.walter Brattain and Shockley at Bell Laboratory in
U.S.A.
• It is the invention of the transistor that has brought
revolutionary changes in the field of Electronics.
• Transistor is an acronym for Transfer Resistor.
• Transistor is an active device.

• Transistor is a semiconductor device made of Germanium

3 (Ge) or Silicon (Si).

 Formation of Transistors
• Basically Transistor Consists of two back-to-back PN
junctions (diodes) manufactured as a single piece of
semiconductor crystal.

• These two junctions give rise to three regions namely

1. Emitter (E),
2. Base (B) and
3. Collector (C).

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 Types of Transistors

• Types of Transistors
1. Bipolar Junction Transistors (BJTs)
• PNP
• NPN
2. Field Effect Transistors(FETs).

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 Bipolar Junction Transistor (BJT)
• A junction transistor is simply a sandwich of a thin layer of
one type semiconductor material (either N type or P type)
between two layers of other type semiconductor
materials.
• Transistors are of either PNP or NPN.
• A bipolar junction transistor (bipolar transistor or BJT) is a
type of transistor that uses both electrons and holes as
charge carriers.

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 Bipolar Junction Transistor (BJT)

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 Formation of BJT

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 Formation of BJT

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 Formation of PNP BJT

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 Formation of PNP BJT

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 Formation of NPN BJT

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 Formation of BJT
• The two junctions give rise to three regions.

• The middle region is called Base and the outer two

regions are called as Emitter and Collector.
• Three terminals were taken from three regions, namely E,
B & C.
• Although Emitter & Collector are made of same material
their functions cannot be inter changed because they
have different physical & electrical properties.

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 Formation of BJT
• Emitter :
– It is that region of the transistor which emits majority charge
carriers into Base region.
– The doping concentration of Emitter is more than both Base and
Collector.
– Physical size of Emitter is less than Collector but more than the
Base.

• Base :
– It is the middle region of the transistor.
– It is very thin and lightly doped as compared to either the Emitter
or Collector.

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 Formation of BJT
• Collector :
– It is that region of the transistor which collects the majority charge
carriers emitted by the Emitter Passing through the Base region.
– Collector region is made physically larger than Emitter and Base
to dissipate the heat generated by high velocity charge carriers.
– It's doping concentration is greater than Base region and less
than that of Emitter region.

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 Formation of BJT
• The PN junction between Emitter and Base is called
Emitter junction and the junction between Base and
Collector is called Collector junction.
• The horizontal line represents Base (B) while the two
inclined lines represents the Emitter (E) and Collector (C).
• Emitter is distinguished from the collector by an arrow
head. Arrow head on the Emitter represents the direction
of conventional current.

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 Formation of BJT
• In PNP transistor arrow points towards the Base meaning
that Emitter is at positive potential with respect to Base.
• In NPN transistor arrow points from Base to Emitter
meaning that the Base (and Collector as well) is at
positive potential with respect to Emitter.

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 Additional Study Material

https://learn.sparkfun.com/tutorials/transistors/all

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 Thank You

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