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SCR Dynamic Characteristics

The document discusses the dynamic characteristics of SCRs and MOSFETs during turn on and turn off. It describes the construction and working of N-channel enhancement MOSFETs, IGBTs, and their VI and switching characteristics. The document also discusses turn on methods, voltage and current ratings, protection circuits including snubber circuits, di/dt protection using inductors, and parallel operation of MOSFETs.

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NANDINI SINHA
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1K views25 pages

SCR Dynamic Characteristics

The document discusses the dynamic characteristics of SCRs and MOSFETs during turn on and turn off. It describes the construction and working of N-channel enhancement MOSFETs, IGBTs, and their VI and switching characteristics. The document also discusses turn on methods, voltage and current ratings, protection circuits including snubber circuits, di/dt protection using inductors, and parallel operation of MOSFETs.

Uploaded by

NANDINI SINHA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
  • Dynamic Characteristics of SCR: Discusses the dynamic characteristics of SCR during turn on and off with waveform diagrams.
  • N Channel Enhancement Type MOSFET: Explains the structure and operation of N Channel Enhancement type MOSFETs with diagrams.
  • VI Characteristics of MOSFET: Describes the voltage-current characteristics of MOSFETs with graphical illustrations.
  • Switching Characteristics of MOSFET: Illustrates the switching characteristics and switching models of MOSFETs through diagrams.
  • IGBT Construction and Working: Details the construction and working principles of IGBT with structural diagrams.
  • Equivalent Circuit of IGBT: Shows the simplified circuit diagrams and their equivalent representations for IGBTs.
  • VI Characteristics of IGBT: Visualizes the VI characteristics of IGBT with thorough graphical depictions.
  • Switching Characteristics of IGBT: Depicts the switching characteristics of IGBT using waveform diagrams.
  • Design of UJT Trigger Circuit for SCR: Explains designing a UJT triggering circuit for SCR along with step-by-step calculations.
  • Turn On Methods of MOSFET/IGBT: Presents various methods for turning on MOSFET and IGBT, illustrated via schematic diagrams.
  • Thyristor Ratings: Defines the rating system for thyristors including voltage and current ratings with explanations.
  • Protection Circuits: Describes protection circuit designs against dv/dt and overvoltages, along with snubber circuits.
  • Parallel Operation of MOSFET: Explains operation principles and calculations when MOSFETs are used in parallel.

RV College of

Engineering Go, Change the World

Dynamic Characteristics of SCR during turn ON

td-Delay time
tr-Rise time
ts-Spread time
Ton-Turn on time=
td+tr+ts
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Dynamic Characteristics of SCR during turn OFF

trr-Recovery time
tgr-Gate recovery
time
Toff-Turn off time=
trr+tgr
Tq-circuit turn-off
time
RV College of
Engineering Go, Change the World

N channel Enhancement type MOSFET


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VI Characteristics of MOSFET
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Switching Characteristics of MOSFET


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IGBT construction and working


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Equivalent and simplified circuit of IGBT


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VI Characteristics of IGBT
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Switching Characteristics of IGBT


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RV College of
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RV College of
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Turn On Methods of MOSFET/IGBT


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RV College of
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Voltage Ratings(Cont’d)
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Current Ratings
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Current Ratings(Cont’d)
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Protection Circuits
• Protection Against dv /dt and Over voltages [Snubber Circuits]
• di /dt Protection with the help of Inductor
• Overcurrent Protection
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Design of snubber
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di /dt Protection with the help of Inductor


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Design the snubber circuit elements Rs and Cs connected across the SCR given that
dv/dt (max) = 180 V / µ s and di/dt (max) = 45 A / µ s. An inductance L = 0.1 H and a
resistance R<< Rs are in series with the SCR with a 300 V DC applied to the circuit.
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Solution cont’d
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Parallel Operation of MOSFET


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Two MOSFETS which are connected in parallel similar to Fig. carry a total current of IT = 20 A. The
drain-to-source voltage of MOSFET M1 is Vds1 = 2.5V and that of MOSFET M2 is Vds2 = 3 V.
Determine the drain current of each transistor and difference in current sharing if the current
sharing series resistances are (a) Rs1 = 0.3 ohm and Rs2 = 0.2 ohm, and (b) Rs1 = Rs2= 0.5 ohm.
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Solution Cont’d
RV College of
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