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Piezoresistive Sensors - Principles, Materials, Fabrication and Applications
Piezoresistive Sensors - Principles, Materials, Fabrication and Applications
Chang Liu
Micro Actuators, Sensors, Systems Group
University of Illinois at Urbana-Champaign
dR dL d dA
R L A
R L
G
R L
R stress E
R
G R
l R
l
• Nickel-Chrominum alloy
N type P type
Phosphorous doped Si Boron doped Si
-22 30
-20 28
-18 26
-16 24
-14 22
-12 20
-10 18
-8 16
-8 14
-6 12
-4 10
-2 8
Common configuration.
Rs R R
R2 R4
Vout Vin
R1 R2 R3 R4
R R
Vout Vin
R ( R R ) 2 R
R / 2
R Vout Vin
(R ) 2 R R
R 1 R 2
Vin Vin
2 R R 2 2 R R 2( R R
) Temperature in-sensitive!!
2
• Process
• Etch backside to form
diaphragm with controlled
thickness.
• Silicon is selectively doped
in the region where stress is
greatest.
• Difference of pressure
across the diaphragm will
cause stress concentration.
displacement Stress
4w 4w 4w p
2 2 2 4
x 4 x y y D
Differential eq.
For displacement.
2mx 2ny
w amn 1 cos 1 cos
m 1 n 1 a b
4 2t E
2 2mx 2ny 2mx 2ny
x ( x, y ) 2
a 1 2
m 1 n 1
a mn
m cos(
a
) n 2
cos(
a
) ( m 2
n 2
) cos(
a
)(
a
Tensile
Compressive
– Fatigue
• If repeated cycle of force is applied to a mechanical member, with the
induced strain much lower than that of the fracture strain, the member
may failure after repeated cycles.
• Mechanism: microscopic defects (bubbles, dislocations) amplifies
over time and causes stress concentration (re-distribution of stress).
The defects are often hidden underneath the surface of the material.
Assumptions
• assume entire resistance is
concentrated at the
anchor;
• for moment of inertia at
the end, ignore the
thickness of the resistor.
• Assume the stress on the
resistor is the maximum
value.
• The proof mass is rigid. It
does not bend because of
the significant thickness
and width.