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3
Construction of npn and pnp transistor
npn transistor:
n-type
a p-type semiconductor
sandwiched between two n-type
semiconductors p-type
n-type
pnp transistor:
p-type
an n-type semiconductor
sandwiched between two p-type
semiconductors n-type
p-type
BJT
The three regions of a BJT are
connected to the outside world
through the three leads.
A bipolar junction transistor is
constructed with three regions.
the emitter region (E), the base
region (B), and the collector
region (C).
BJT (cont’d)
B
The base region (B) is made very thin and is much more
lightly doped compared to other regions.
The collector region (C) usually has a large surface area and
is lightly doped compared to the emitter.
E C
The emitter region (E) is the heaviest doped region.
0.001 inches
Emitter Base
Terminal Terminal
Emitter Region (E)
Collector
Collector
Terminal
Terminal
Transistor packaging
Refer to the manufacturer’s data
books for BJT packaging details.
C
C
n p
Base p Base n
B B
n p
E E
Emitter Emitter
The arrow is always drawn on the emitter terminal.
The arrow always points toward the n-type material.
The arrow indicates the direction of flow for emitter current.
BJT junctions
The transistor is made up of three separate semiconductor material.
The three materials are joined together in such a way as to form two pn junctions.
The two junctions in a BJT are referred to as the base-emitter junction (B-E junction)
and the base-collector junction (B-C junction).
C
E n p n
Emitter-base Collector-base
junction diode junction diode
E C
B
Operation of npn BJT
When n, p, n material join together: two depletion layers have been formed at base-
emitter junction (B-E junction) and base-collector junction (B-C junction).
n p n
+ - - +
+ - - +
+ - - +
+ - - +
C
E + - - +
+ - - +
+ - - +
+ - - +
+ - - +
For both npn and pnp transistors to operate actively as an amplifier, B-E junction must
be forward biased, B-C junction must be reverse biased.
Collector biased
Collector
biased
Reverse
Reverse –
+ Or VBC>0
Or VBC<0
VB>VC
VB<VC – n
+ p
Base p Base n
+
VB<VE and –
VB>VE and p
VBE=0.7V
n VEB=0.7V
– +
Or VBE>0 Or VEB>0
Forward Forward
biased Emitter biased Emitter
Operation of npn BJT as an amplifier
Depletion layer
Electron
flow
n p n
+ - - - + +
ee + - - - + +
ee + - - - + + C
ee
+ - - - + +
e
E ee
+ - - - + +
ee
ee
+ - - - + +
ee
+ - - - + +
+ - - - + +
ee
+ - - - + +
- VBE + – VBC +
In normal operating conditions (BJT as an amplifier)
The base-collector is reverse biased => no current can flow down
The base-emitter junction is forward biased (0.6-0.7V) => the diode “contact potential barrier” can be
overcome => Electrons can go to base, called base injection. These electrons are minority carriers,
which are strongly attracted/captured by the collector, causing the current flow down from C->E
The base current is very small (µA) => we use a small base current to induce a large collector current: I C =
IB
BJT operation (cont’d)
There are two different electron-flows in a normal npn transistor
operation.
One from the emitter region to the base region of the transistor and
is called the base current IB
The other from the emitter region to the collector region and is
called the collector current IC. Collector current (IC) comprises two
components:
Majority carriers (electrons)Ifrom IE
theemitter
C majority
I reverse-biased
Minority carriers (holes) from I BC junction → leakage current, ICBO
C min ority CBO
I C I E I CBO
I C I E
Total collector current (IC);
Since leakage current ICBO is usually so small that it can be ignored.
The electron-flow which goes into the emitter region from the
external voltage source, is called the emitter current IE.
The emitter current is made up of the base current and the collector
npn BJT current
The emitter current IE always flows out of the C
emitter terminal.
IC
The base current IB flows into the base terminal.
IB
The collector current IC flows into the collector B
terminal.
IE
VBE ≈ 0.6 V when the transistor turns on.
E
Never try to stick a large voltage across VBE
because it may produce enormous currentor may IE = I B + I C
just kill the device!
β is a “bad” parameter. Don’t trust the databook. Its
value can vary to ±50% or more.
IC = β.IB holds only under some carefully set
conditions. We’ll look at it later.
pnp transistor
In a pnp transistor, holes in C
the emitter region swamp
across the junction when the IC
emitter-base junction is IB
forward biased. B
The emitter current IE always
flows into the emitter terminal. IE
The base current IB flows out
of the base terminal. E
The value of βDC can vary from less than 10 to a few hundreds.
IC
DC or I C DC I B
IB
DC DC
DC DC
1 DC 1 DC
Normally, βDC (DC beta) >100. e.g., the 2N3904 npn transistor has a minimum βDC of 200.
For the base current IB to change, the bias voltage VBE must first
change. But the changes in VBE is very small for large changes in IB.
(Refer to diode I-V curve)
The collector-base voltage VCB also affects the collector current IC, but
the amount is too insignificant and is ignored here for simplicity.
Equations of Operation
v BE
iE I ES exp 1 I s I ES
VT
v BE
iC I s exp
iE iC iB VT
iC iC
iB 1
iE
iC iB
21
22
Transistor input characteristic (IB~VBE)
-
+
A
RB
= 10kΩ IB
VBB VCC
= 5V RVB RVC = 25V
+
+
VBE VCE V
V
- -
The input characteristic is a plot of IB versus VBE curves while keeping VCE constant.
One ammeter and two voltmeters are used to measure I B, VBE and VCE respectively.
Rheostat RVB is used to set the base current IB, and rheostat RVC is used to adjust the
voltage drop across the collector and the emitter terminals VCE of the transistor.
Transistor input characteristic (IB~VBE) (cont’d)
-
+
A
RB
= 10kΩ IB
VBB RVB VCC
= 5V RVC
= 25V
+
+
VBE VCE V
V
- -
1. By adjusting the RVB rheostat the base current IB can be set to some convenient values.
2. When adjusting the base current IB the collector-emitter voltage VCE varies. Hence, to set
VCE back to its previous value, RVC is adjusted.
3. When adjusting RVC, the base current IB shifts away from its previous set value. Resistor RVB
is then re-adjusted. These processes continue until both IB and VCE are set at the desired
value.
4. Then, the base-emitter input voltage V BE is measured by the voltmeter and recorded.
VBE (V) VCE=0.5V VCE=1V VCE=5V VCE=10V
Plot IB~VBE
IB=2A 0.659 0.659 0.659 0.659
IB (A)
VCE = 0.5 V
VCE = 1 V
30 VCE = 5 V
VCE =10 V
20
10
VBE (V)
27
Detailed BJT characteristics IB(VBE)
28
Transistor output characteristic (IC~VCE)
-
+
A
-
+
A IC
RB
= 10kΩ IB C
VBB RVB VCC
= 5V RVC
= 25V
+
VCE V
-
The output characteristic is a plot of IC versus VCE curves while keeping IB constant.
Two ammeters and one voltmeter are used to measure I B, IC and VCE respectively.
By adjusting the RVB rheostat the base current IB can be set to some convenient values.
To measure the collector current IC and the collector-emitter voltage V CE, RVC is adjusted.
While adjusting the rheostat RVC the base current IB varies. To set IB back to its previous value, RVB is re-
adjusted.
A range of IC and VCE measurements can be collected while keeping I B constant.
VCE=0.5V VCE=1V VCE=5V VCE=10V
Plot IC~VCE IC (mA)
IC (mA)
IB = 30A
4
3
IB = 20A
2
IB = 10A
1
IB = 2A
VCE (V)
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Detailed BJT characteristics IC(VCE)
31
Transistor output characteristic (IC~VCE) (cont’d)
At low base current IB, say less
Saturation
than 40µA, the collector current IC IC (mA) region
remains relatively constant IB = 30A
throughout the entire range of
4
VCE. This is known as the active
region.
Which means, the collector terminal (n-type) potential is lower than the
base terminal (p-type) potential by 0.5 volts, i.e. forward bias.
Active region
When the base-emitter junction (B-E) is forward biased, and the base-
collector junction (B-C) is reverse biased. The transistor is active.
In the active region, the IC value is independent on VCE.
In the active region, the collector current IC is wholly controlled by the
base current IB and IC is completely dependent on IB.
Active region is the most commonly used operating region for
amplification purposes.
The active region is also called the linear region whereby the collector
current IC is linearly dependent on the base current IB.
This equation holds true only if the transistor is operating in the active or
the linear region.
This effect of changing βDC is more evident when we consider the effect of
temperature.
Cut-off region
When the base-collector junction (B-C) is reversed biased and the base-emitter
junction (B-E) is reverse biased, or not fully forward biased at 0.7 V, i.e. VBE < 0.7 V,
The transistor is cut-off.
Breakdown region
The transistor will breakdown if the collector-emitter voltage V CE or its collector current IC
surpasses its maximum allowed value.
These maximum allowed values are usually specified in the transistor’s data book by the
manufacturer of the transistor.
When the VCE surpasses its maximum value, both IC and VBC increase drastically until the
transistor burns itself up due to the excessive heat generated.
The Breakdown Region is not shown in the plot as it is beyond the various I B marking on the
output characteristic curves.
Transfer (static) characteristic, IC~IB
The transfer characteristic (or the current gain) of a bipolar junction transistor is
simply a plot of the collector current IC ~ IB for various fixed values of the collector-
emitter voltage VCE.
This can be either obtained experimentally or determined from the output
characteristics.
To experimentally obtain the transfer characteristic, the collector-emitter voltage V CE is
set at a selected value, then vary the base current I B and record the corresponding
collector current IC .
The base current is adjusted in convenient steps. At each step, the value of the
collector current is measured and recorded.
The transfer characteristics (IC versus IB) are plotted for the selected value of VCE.
IC
RB
= 10kΩ
VBB RVB RVC VCC
= 5V = 25V
IB VCE
Transfer (static) characteristic (cont’d)
The transfer characteristic can also be obtained from the output characteristic:
1. Draw a vertical line corresponds to the selected collector-emitter voltage V CE.
2. This vertical line cuts the output characteristic line corresponding to a base current I B. The
collector current IC is read from the vertical axis at the intersecting point.
3. The transfer characteristic is then plotted with the values of I C and IB.
4. DC can be obtained from the transfer characteristic.
3 3
IB = 20A
2 2
IC
IB = 10A
IB
1 1
IB = 2A DC= IC/IB IB(A)
VCE (V)
1 2 3 4 5 6 7 8 9 10 10 20 30
Transfer (static) characteristic (cont’d)
Static Transfer Characteristic
VCE=6V
VCE=2V
Junction biasing condition for Saturation, Active and Cut-
off operation of npn transistor
Saturation operation (use in switching operation)
The Base-Emitter junction (B-E) must be forward biased with VBE = 0.7 V,
The Base-Collector junction (B-C) must be forward biased, VBC > 0 V.
E C Example:
n p n
For a npn transistor, VB=1.2V, VE=0.5V,
– –
VC=0.6V, determinate its operating region.
Solution:
VBE = 0.7V + + VBC > 0 V
VBE=VB–VE=1.2–0.5=0.7V >0
B --- BE junction is forward biased
VBC=VB–VC=1.2–0.6=0.6V >0
Note:
--- BC junction is forward biased
VBC = VB –VC = – VCB
VBE = VB –VE = –VEB ∴ Transistor is in saturation region.
Junction biasing condition for Saturation, Active and
Cut-off operation of npn transistor (cont’d)
Active operation (use in amplification operation)
The Base-Emitter junction (B-E) must be forward biased with VBE = 0.7 V,
The Base-Collector junction (B-C) must be reverse biased, VBC < 0 V.
Example:
E C
n p n For a npn transistor, VB=1.2V, VE=0.5V,
VC=2.6V, determinate its operating region.
– +
Solution:
VBE=VB–VE=1.2–0.5=0.7V >0
VBE = 0.7V + – VBC <0 V
--- BE junction is forward biased
B VBC=VB–VC=1.2–2.6=–1.4V <0
Note: --- BC junction is reverse biased
VBC = VB –VC = – VCB
VBE = VB –VE = –VEB ∴ Transistor is in active region.
Junction biasing condition for Saturation, Active and
Cut-off operation of npn transistor (cont’d)
Cut-off operation (use in switching operation)
The Base-Emitter junction (B-E) is either
not biased at all VBE = 0 V, or reverse biased VBE < 0 V, or
forward biased but VBE < 0.7 V.
The Base-Collector junction (B-C) is reversed biased
Example:
E C
n p n For a npn transistor, VB=0.7V, VE=0.3V,
VC=2.6V, determinate its operating region.
+/– +
Solution:
VBE<0 VBE=VB–VE=0.7–0.3=0.4V <0.7V
Or VBE <0.7V VBC <0 V
–/+ –
--- BE junction is not fully forward biased
B
VBC=VB–VC=0.7–2.6=–1.9V <0
Note: --- BC junction is reverse biased
VBC = VB – VC = – VCB
VBE = VB –VE = –VEB ∴ Transistor is in cut-off region.
Summary of npn BJT operating region
forward biased
VBE<0 and VBC<0
Cut-off
Or VBE<0.7V reverse biased
reverse biased or not
fully forward biased
Summary of npn BJT operating region
• Typical operations
– 1. Cut-off
– 2. Active operation
– 3. Saturation
• Determining factors:
– How large is IB or VBE
– How large is RL
43
Summary of npn BJT operating region
• Cut-off
– When the B-E junction is not forward-biased,
the transistor is basically not doing anything.
– This is called CUT-OFF.
44
Summary of npn BJT operating region
• Active operation
– When the following holds:
IC = βIB
the BJT is said to be in active operation.
– This is the case of current amplification.
– But we need ICRL < 10V
45
Summary of npn BJT operating region
• Condition for active operation: ICRL<VCC
46
Summary of npn BJT operating region
• Saturation
– When VCE is reduced to 0, the BJT is saturated
47
Summary of npn BJT operating region
• What makes it saturated?
48
Summary of npn BJT operating region
• Application: BJT as a switch
49
Applications of BJT
Two major applications of BJT.
(1) switching applications and (2) linear amplifiers.
RC
RC RC
RC
IC(sat) IC = 0 A
RB
IB RB
C Q VCE(off) C
Q VCE(sat) 0V
VBB
VBE E E
IC (mA)
IC(sat) Point A
(ON)
Operating points
on BJT output
Point B
(OFF)
characteristic
VCE(off) VCE (V)
VCC = 24 V
BJT drives a LED
In Figure 1, the properties of BJT
R V =I R
and LED are given as: C RC F C
V
VCE(sat) = 0.2 V, and BR
F
v = 5V Q V
βDC (min) = 50 in(on)
v
in
CE
v = 0V V
LED: VF = 2.5 V, and
in(off) BE
I = 30 mA
Figure 1
Determine the appropriate values for resistors
RC and RB to be used in the circuit.
Solution
Power rating of RC :
KVL for the output circuit,
VCC = IF RC + VF + V CE(sat) PRC = ICVRC
= 28.4m x 21.3 = 0.605 W.
Current limiting resistor RC:
Select RC = 750 , 1 Watt.
RC = (VCC – VF – VCE(sat) ) / IF Base current: IB = I C(sat) / βDC(min)
= (24 – 2.5 – 0.2) / (30m) = IF / βDC
= 21.3 / 30m = 710 = (30m) / 50 = 0.6 mA
Select higher value of RC = 750 Base resistance:
to protect the LED. RB = (v in(on) – VBE ) / IB
The operating collector current:
= (5 – 0.7) / (0.6m) = 7.166 k
IC = VRC / RC
Select lower value of RB = 6.8 k, 1/4 watt to
= 21.3 / 750 = 28.4 mA
ensure that IC is operating in saturation region.
BJT drives a relay
In Figure 5.2.2, the properties of the components are given as: VCC = 12 V
BJT rating: VBE = 0.7 V, V = 0.1 V, and βDC (min) = 70 IC Relay
Normally open relay: coil voltage, VR = 12 V, coil resistance, RR = 730 Ω
Diode: select a diode with a PIV rating of at least 100V. D1
Select an appropriate resistors RB to be used in the circuit.
RB
Solution vin(on) = 5V Q VCE
vin
vin(off) = 0V VBE
When BJT is ‘on’,
KCL: IC(sat) = IRC + IR
Figure 2
Saturation current: IC(sat) = (VCC – VCE(sat) ) [RC // RR]
= (VCC – VCE(sat) ) [(RC + RR) / (RCRR)]
= (12 V – 0.1 V) [(1 k + 730 ) / (1 k x 730 )]
= 28.2 mA
Base current: IB = IC(sat) / βDC (min) = 28.2 mA / 70
= 0.403 mA
Base resistance: RB = (vin(on) – VBE ) / IB (KVL: vin(on) = IB RB + VBE )
= (5 V – 0.7 V) / (0.403 mA)
= 10.67 k
Select lower value of RB = 10.7 k, 1/4 watt to ensure that IC is
operating in saturation region.
53
Biasing conditions exercise Solution:
Transistor Q1:
Determine the operating region of the silicon-made
npn transistor with the potential (with respect to VBE =VB–VE=7.3V–7.1V=0.2V< 0.7V
the ground potential) at each of the terminal as -- BE Not fully forward biased, IB0.
follows: VBC =VB–VC =7.3V–9.4V = –2.1V<0
-- BC Reverse Biased
∴Transistor Q1 operates in the
cut-off region.
7.1 V 7.3 V 9.4 V
Transistor Q2:
4.2 V 4.9 V 4.3 V VBE =VB–VE =4.9V – 4.2V = 0.7 V>0
-- BE Fully Forward Biased
4.6 V 5.3 V 7.9 V VBC =VB–VC =4.9V–4.3V = 0.6V > 0V
-- BC Forward Biased
E C ∴Transistor Q2 operates in
n p n the saturation region.
VE VBE VBC
Transistor Q3:
VC
B VBE =VB–VE =5.3V – 4.6V = 0.7 V >0
VB -- BE Fully Forward Biased
0V VBC =VB–VC =5.3V–7.9V =–2.6V <0V
Ground ---\ BC Reverse Biased ∴Transistor Q3
Potential operates in
the active region.
Solution:
Exercise Transistor Q1:
VBE =0.7 V>0
Determine the operating region ---BE forward biased,
of the silicon-made npn VBC =VBE–VCE=VB–VE–(VC–VE)=VB–VE–VC+VE
transistor in the following =0.7 V – 1.2 V = – 0.5 V<0
table: -- BC Reverse Biased
\ Transistor Q1 operates in active region.
Transistor Q3:
VBE =0.3 V<0.7V
---BE not Fully Forward Biased
∵VCE=–VEC=–(–2.5)=2.5V
VBC =VBE –VCE =0.3–2.5=–2.2 V < 0 V
-- BC Reverse Biased
\ Transistor Q3 operates in cut-off region.
Example Solution:
Step 1:Find IB from input circuit:
In the following transistor circuit,
the input voltage Vin=2V, DC=150, Vin=IBRB+VBE
calculate IB, IC, VCE and VBC, IB=(Vin–VBE)/RB=(2–0.7)/10KΩ=0.13mA
determine the transistor
operating mode. Step 2: Find IC
IC=DCIB=1500.13mA=19.5mA
57
Important Small-Signal Characteristic
• What is gm?
58
Important Small-Signal Characteristic
• A bit more precise
59
Important Small-Signal Characteristic
• A bit more precise
60
Operating Limits of a BJT
Each transistor is designed for
some specific applications and
has a set of maximum ratings
such as:
the maximum collector current
rating IC(max),
the maximum collector-emitter
voltage rating VCE(max) , and
the maximum dissipated power
rating PD(max).
IC(mA)
Solution 60 IC(max) =50mA
Step 1: First draw the horizontal line I
C(max) = 50mA at IC axis.
50
Step 2: Next draw the vertical line VCE(max)
40
= 60V at VCE axis.
Step 3: 30
∵PD(max) = 500mW = IC x VCE
∴ IC = 500mW / VCE 20
Select some convenient values of V CE
10 Safe operating
and calculate the corresponding IC as VCE(max) =60V
region
shown in table. 0
Step 4: Plot IC verse VCE curve. 10 20 30 40 50 60VCE(V)
Exercise VCE(V) 10 20 30 40 50
Plot the operating limits of the transistor
having a maximum collector current
IC(max) = 40mA, a maximum collector- IC(mA) 40 20 13.3 10 8
emitter voltage VCE(max) = 50V, and a
maximum power dissipation PD(max) =
400mW.
IC(mA)
Solution
Step 1: First draw the horizontal line 60
IC(max)=40mA at IC axis.
50 IC(max) =40mA
Step 2: Next draw the vertical line VCE(max)
=50V at VCE axis. 40
Step 3:
∵PD(max) = 400mW = IC x VCE 30
∴ IC = 400mW / VCE
Select some convenient values of VCE 20
Thermal runaway
Bipolar transistors suffer from an effect known as thermal runaway, whereby an
increase in the transistor temperature causes an increase in the dc current gain βDC
which in turn increases the collector current IC. The increased collector current further
increases the base-collector junction temperature due to heating from its dissipated
power PD = VCE IC. Subsequently, the dc current gain βDC and hence, the collector
current IC increases further. This process continues until the transistor either burns
itself out or operates in the saturation region I C(sat) .
T βDC IC PD
Heat dissipation of BJT
When power is dissipated in the base-collector junction, the heat generated should
be immediately conducted away from the junction to the transistor case and then to
the surrounding air to avoid burning or over heating.
Heat sink
The amount of heat or power flow from the junction to the surrounding
air depends on the heat handling capacity or thermal resistance of the
transistor and also the temperature difference (or gradient) between
the junction and the surrounding air.
In other words, a heat sink increases the heat handling capacity from
the case-to-air of a transistor.
Heat sink (cont’d)
BJT Summary
1. The bipolar junction transistor, BJT, is a three terminal device; terminals are the
Emitter (E), the Collector (C) and the Base (B).
2. There are two types of BJTs: the npn and pnp.
3. The arrow in the circuit symbol of a BJT transistor is on the emitter (E) and points
to the n-type material.
4. The input characteristic is a plot of IB versus VBE curves while keeping VCE
constant.
5. The output characteristic curves of a bipolar transistor are plotted with the collector
current IC against the collector-emitter voltage VCE while keeping IB constant.
6. The gradient (or slope) of the transfer characteristic line gives the value of βDC for
the particular VCE value.
7. The transistor is a current controlled device where by the base current, IB (A),
controls the amount of emitter current, IE (mA), and collector current, IC (mA).
8. The d.c. common-emitter current gain (βDC) is:
IC
DC
IB
BJT Summary
9. The junction between the base and the emitter is called the base-emitter junction (B-E) and
the junction between the base and the collector is called the base-collector (B-C) junction.
10. Regions of operation for BJT:
When both the B-E and B-C junctions are in forward biased, the transistor is said to be in
the saturation region.
When the B-E is not fully forward biased and B-C junctions are in reverse biased, the
transistor is said to be in the cutoff region.
When the B-E junction is in forward biased and the B-C junction is reverse biased, the
transistor is said to be in the active or linear region.
11. Properties of BJT operating in the active region (applied in amplifier circuits):
• βDC = IC / IB.
• IE = IC + IB
• VBE = 0.7 V.
12. Operating limits of BJT is limited by: I C(max) , VCE(max) , and
PD(max) = IC x VCE
13. Bipolar transistors suffer from an effect known as thermal runaway; heat sink is normally
required to provide heat dissipation.
Transistor Summary
Although in modern electronics, amplifiers are more
conveniently implemented using integrated circuits (IC) like
operational amplifiers, understanding of transistor amplifiers is
useful as
they serve as the building blocks of integrated-circuit amplifiers.
they are used in high frequency applications e.g. in radio
communications circuits, where discrete transistor amplifiers are
still popularly in use.
73
Transistor Circuit Configurations
There are three amplifier
configurations utilized in transistor Common-Emitter (CE) circuit:
circuits: V
CC
CE—Common-Emitter
CC—Common-Collector
R
C
CB—Common-Base
+
The most widely used
configuration is the CE + v
o
configuration. R
v B
i
R
- V E -
BB
DC Biasing Circuits
• The ac operation of an +VCC
amplifier depends on the
initial dc values of IB, IC,
and VCE.
RC
• By varying IB around an RB
initial dc value, IC and VCE v out
Linear operation:
vin (v) vout (v)
Output signal is an amplified
replica of the input signal
t(s) t(s) with 180o out of phase.
A
Or IB = (VBB –VBE) / (RB + βDC RE) This is the biasing base current.
Applying KVL around the output circuit we obtain the dc load line equation:
VCC = RC IC + VCE + RE IE For βDC 50, assume IE = IC,
RC VRC
IB RB VB VC
VCE VCC
VRB VBE VE
VBB VRE
RE
IE
Potential at base:
VB = VBB – VRB = VBB – IBRB
Or VB = VRE + VBE = IERE + VBE
Potential at emitter:
VE = IERE
Or VE = VCC – VRC– VCE= VCC–ICRC–VCE
Or VE = VBB – VRB– VBE= VBB–IBRB–VBE
Potential at collector:
VC = VCC – VRC = VCC – ICRC
Or VC = VRE + VCE = IERE + VCE
Exercise 1 Solution
Step 1: Determine IB.
Find IB, IC, VCE and determine the Apply KVL around the input circuit:
operating region of this transistor VBB = RBIB + VBE + βDC IB RE
and indicate Q-point. 5V = 52kΩIB+0.7V+100 x 2.2KΩ IB
DC=100 IB=(5V–0.7V)/(52kΩ+100 x 2.2KΩ)
= 15.8A
IC
Step 2: Determine the collector current I C.
IC= βDC IB= 100 x 15.8A= 1.58 mA
RC VRC
4.7K Step 3: Determine VCE.
RB +
Ω
IB
52K VCE VCC Applying KVL around the output circuit
VCC = RCIC + VCE + REIE
Ω + 20V
IE 20V = 4.7KΩIC + VCE + 2.2KΩIE
VRB VBE
VBB Since βDC is large, IE = IC
5V RE VRE VCE=20V – 4.7KΩIC – 2.2KΩIC
2.2KΩ VCE=20V–4.7KΩ x 1.58mA–2.2KΩ
x1.58mA = 9.098V
Step 5: find VE
Because DC>50, IE=IC
∴VE=IERE=ICRE=1.45mA 1.8KΩ=2.61V
Biasing of BJT
+ +
+ +
VCB + RC ICRC
VCB VCB IC RC RB
IC IB - IBRB -
- + +
IB- VCC IB VCE _ VCE -
+ +
- RB - VCC
VBE + + VCE
IE + VCC + IB -
IE - VBE
VBE VBB VBE IE
-
- -
VCE= VCB +VBE = VCC Development of Biasing circuit for BJT by one battery
-
- RC ICRC
IBRB RB +
+ CB
- VCC
IB VCE
-
+
VBE IE
+
88
2.3 BJT Fixed bias circuit analysis
Example:
Following BJT circuit has VCC=9V, =50 , RB=100kW, RC=1kW . If forward
bias VBE=0.7V, find Base current IB, Collector current IC, Emitter current
IE,VCE, and reverse bias voltage VCB.
100k RC 1k
RB
IC 9V
+
VCC
VCE
+ IB -
VBE IE
-
9 0.7
9 IB 100k 0.7 IB 0.083mA 83A
100k
IC IB 50 0.083mA 4.15mA
IE IC IB 4.15 0.083 4.233mA
VCE 9 IC 1k 9 4.15 4.85V
VCE VCB 0.7 VCB 4.85 0.7 4.15V
89
3. BJT Emitter bias circuit
3.1 npn-BJT Emitter bias circuit
+
+ RC ICRC
IBRB RB -
- +
IB VCE VCC
-
+
RE IERE
-
-
- RC ICRC
IBRB RB +
+
-
VCC
IB VCE
+
-
RE IERE
+
91
3.3 BJT Emitter bias circuit analysis
Example:
Following BJT circuit has VCC=9V, =50 , RB=100kW, RC=1kW . RE=0.2kW If
VBE=0.7V, find Base current IB, Collector current IC, Emitter current
IE,VCE, and reverse bias voltage VCB.
RB=100kW RC=1kW
+
IB VCE
- VCC=9V
RE=0.2kW
+
RC ICRC
R1 -
IB +
VB VCE VCC
-
R2 +
RE IERE
-
94
4.2 Voltage divider bias circuit analysis
(by Thevenin’s theorem)
VCC
R1
IC IC
RB V B
VB
IB IB
R2 VBB
RE RE
R1R2 R2
Rth RB R1 // R2 and Vth VBB Vcc
R1 R2 R1 R2
I V 0.7
VBB IBRB 0.7 IC RE C RB 0.7 IC RE IC BB
RB R
E
95
4.3 BJT Voltage divider bias circuit analysis
Example:
Following BJT circuit has VCC=9V, =50 , R1=100kW , R2=22kW, RC=1kW .
RE=0.2kW If VBE=0.7V, find Base current IB, Collector current IC, Emitter
current IE,VCE, and reverse bias voltage VCB.
R1=100kW RC=1kW
IC
+
IB VCE
- VCC=9V
RR 100k 22k
Rth RB 1 2 18k and IE
R1 R2 122k
RE=0.2kW
R2 9 22k R2=22kW
Vth VBB Vcc 1.623V
R1 R2 100k 22k
I I
VBB IBRB 0.7 IC IB RE C RB 0.7 IC C RE
IC
VBB 0.7
R
1.623 0.7
0.2k 18k
1.648mA taking 1 1
(1 1 )RE B 50
I 1.648
IB C 32.96A IE 1.648 0.03296mA 1.68mA
50
VCE 9 IC 1k 0.2k 9 1.648mA 1.2k 7.022V
VCE VCB 0.7 VCB 7.022 0.7 6.322V 96
4.4 BJT Voltage divider bias circuit
(approximate analysis)
97
Example:
Using approximate method, analyze the following BJT circuit having V CC=9V,
=200 , R1=47kW , R2=10kW, RC=1kW . RE=1kW If VBE=0.7V, find Base
current IB, Collector current IC, Emitter current IE,VCE, and reverse bias
voltage VCB.
R1=47kW RC=1kW
IC
+
IB VCE
- VCC=9V
IE
RE=1kW
R2=10kW
98
99
5. BJT Feedback bias circuit
+
RC ICRC
RB -
I +I
C B
IC
IB +
VCC
VB VCE
-
+
RE IERE
-
Feedback bias has IB obtained by RB from collector voltage for better control on
IC and RE connected to Emitter for very much better stabilization of I C
100
Example:
Following BJT Feedback bias circuit has V CC=9V, =50 , RB=500kW , RC=1kW
. RE=0.2kW If VBE=0.7V, find Base current IB, Collector current IC,
Emitter current IE,VCE, and reverse bias voltage VCB.
101
Analysis of BJT Biasing
102
Analysis of BJT Biasing
• β dependent biasing — bad biasing
103
Analysis of BJT Biasing
• A slightly better biasing method
104
Analysis of BJT Biasing
• A much better biasing method — emitter
degeneration
105
Analysis of BJT Biasing
• Stable (good) biasing
106
Analysis of BJT Biasing
• Alternative view of biasing
107
Analysis of BJT Biasing
• What controls the operating point?
108
Analysis of BJT Biasing
• What happens if VBE dances up and
down?
109
Analysis of BJT Biasing
• Derivation of voltage gain
110
Analysis of BJT Biasing
• CE amplifier
– The one we have just studied is called COMMON-
EMITTER amplifier
111
Analysis of BJT Biasing
• How do we inject signal into the amplifier?
112
Analysis of BJT Biasing
• Note on symbols
113
Analysis of BJT Biasing
• Solution: Add the same biasing DC level
114
Analysis of BJT Biasing
• The wonderful voltage source: capacitor
115
Analysis of BJT Biasing
• Solution — insert coupling capacitor
116
Analysis of BJT Biasing
117
Analysis of BJT Biasing
• Can we simplify the analysis?
– We are mainly interested in the ac signals.
– The DC bias does not matter!
118
Analysis of BJT Biasing
• Small-signal model
119
Analysis of BJT Biasing
120
Analysis of BJT Biasing
121
Analysis of BJT Biasing
122
Analysis of BJT Biasing
123
Analysis of BJT Biasing
124
Analysis of BJT Biasing
125
Analysis of BJT Biasing
126
Analysis of BJT Biasing
127
Analysis of BJT Biasing
128
Analysis of BJT Biasing
129
Analysis of BJT Biasing
130
Analysis of BJT Biasing
131
Analysis of BJT Biasing
132
Analysis of BJT Biasing
133
Modeling of BJT
& Small Signal Analysis
• DC circuit modeling
• AC circuit modeling
• AC parameters of BJT amplifiers
• BJT re model
• BJT Hybrid Model
• Graphical Hybrid Parameters
• Parameters relationship of two models
• Small signal analysis
134
LARGE-SIGNAL DC CIRCUIT MODELS
When iC becomes
zero, we say that
the transistor is
cutoff.
RB 200k
RC 1k
VCC 15V
100
Analysis of the Four-Resistor Bias Circuit
1
RB R1 R2
1 R1 1 R2
R2
VB VCC
R1 R2
VB VBE
IB
RB 1RE
I C βI B
VCE VCC RC I C RE I E
AC Parameters of BJT Amplifiers
VCC=9V
2.Schematic is simplified
1.BJT is biased (Chap. 5)
VCC=9V
R1 RC
DIC Vo(pp)
3. BJT is used as an amplifier 0 t 0 t
to have Vo(pp)>Vin(pp) IL
Iin DIB
Vin(pp)
RL
RE
R2
154
VCC=9V
R1 RC
DIC Vo(pp)
0 t 0 t
4. Input ac voltage Vin(pp) will produce Iin Iin DIB IL
Vin(pp)
RL
8. Vc will produce output voltage Vo(pp) at the collector (Vo(pp) =Vcc-IcRc )
156
• Input resistance of the BJT Ri = re
BJT re model
158
BJT Hybrid model 159
Graphical Hybrid Parameters
160
161
162
163
8.5 Parameters relationship of two models
BJT re model
Hybrid re
model model
hie = re
hre 0
hfe =
hoe = ro
165
T-MODEL
Emitter resistance re rather than the base resistance r
featured in the hybrid-T model.
Current-controlled
Voltage-controlled current source current source
representation.
166
Transistor Amplifier
Example
• NPN
• Quiescent point
VC VCC 2.3 x3 3.1V
VBB VBE 3 0.7 VCC
IB 0.023mA
RBB 100 10V
3 0.7
I C I B 2.3mA 3.0kohm R2
100
R1 Q1
V1 1DEAL_BJT_NPN
100kohm
3V
167
Small Signal Analysis
VT 25mV
re 10.8
I E (2.3 / 0.99)mA
IC 2.3mA
gm 92mA / V
VT 25mV
100
r 1.09k
gm 92
168
Small Signal
169
BJT Small Signal Analysis
170
Small Signal Analysis
Linear operation of the
transistor: small-signal
• vbe triangular waveform
is superimposed on dc
voltage VBE.
• Collector signal current
ic, also of triangular
waveform, superimposed
on the dc current IC.
• Ic = gm vbe, where gm is
the slope of the ic - vBE
curve at the bias point Q.
171
1. Drawing Equivalent circuit
1.Given BJT circuit
100k RC 1k
RB +
V IC 9V
-
CB
+
VCC
2.BJT amplifier
VCE
+ IB -
VBE IE VCC Vin and Vo are connected to the amplifier
-
RB
RC and battery is replaced by VCC
IC
IB vo
vin 3.BJT ac equivalent
C
vo
Ib B
vin
RC
RB
ac equivalent of coupling capacitor is short
ac equivalent of VCC is grounded E
172
Now AV , Rin , Ro , AI can be found from the amplifier equivalent circuit
Example:
Draw the equivalent circuit of the given amplifier
173
Now AV , Rin , Ro , AI can be found from the amplifier equivalent circuit
Example:
Draw the equivalent circuit of the given amplifier
VCC
RC
RB
IC
IB vo
vin
RE1
RE2 CE
vo
Ib
vin
RE1 RC
RB
vo
vin Ib
bre bIb RC
RB
RE1
174
Example:
Draw the equivalent circuit of the given amplifier
+ VCC
RC ICRC
R1 - RC
R1
IB + IC
VB VCE VCC IB vo
-
vin
R2 +
RE IERE R2
- RE
vo
vo
Ib vin Ib
bre RC
vin RB
bIb
RC
RB RE
RE
R1//R2 = RB
175
Example:
Draw the equivalent circuit of the given amplifier
+
RC I C RC
RB -
I +I
C B
IC
IB +
VCC
VB VCE
-
+
VCC
RE IERE
- RC
RB
IB vo
vin
RE
RB
vo
vin Ib
bre bIb RC
RE
176
2. Analysis of Fixed Bias Amplifier
Small-signal analysis of the amplifier is to find out voltage gain A V , Input resistance
Rin , Output resistance Ro , Current gain AI from the amplifier equivalent circuit
Example:
Find the AV , Rin , Ro , AI of the given Fixed Bias Circuit amplifier
VCC
RC vo
RB
IC
C
vo
Iin
vo Ib B Io
IB vin vin Ib
vin RB
RC bre bIb RC
RB
E
vo
Iin bIb ro Io
VCC vin Ib
RC
bre RC
RB
IC vo RB
vo Ib
IB vin
vin RC
RB
Rin Ro
Rin RB // re Ro RC // ro
V Ib RC // ro RC // ro
AV o
Vin Ib re re
I V /R R R // ro RB // re R // ro RB // re
AI o o C AV in C C
Iin Vin / Rin RC re RC RC re
178
Example:
Find the AV , Rin , Ro , AI of the given Fixed Bias Circuit amplifier
including BJT output resistance ro=50k
12V
Io
12 0.7
3kW 12 IB 470k 0.7 IB 0.024mA
470kW 470k
IC
vo IC IB 100 0.024mA 2.4mA
IB
vin 26mV
Iin ro=50kW re 10.8 re 100 10.8 1080 1.08k
b=100 2.4mA
Rin Ro
179
3. Analysis of Emitter Bias Amplifier
Connecting RE at the Emitter of the BJT will have different dc conditions
and also different ac parameters compared to Fixed bias amplifier. R E is
very important to stabilize dc currents in BJT and will also stabilize ac
parameter AV (voltage gain of the amplifier).
Single RE used for both Single RE used for only Both RE1 and RE2 are used for
dc and ac calculations. dc calculations as CE is dc calculations and only RE1
short in ac equivalent for ac calculation as CE is
circuit.
short in ac equivalent circuit.
180
Example:
Find the AV , Rin , Ro , AI of the given Emitter Bias amplifier. Neglect
the BJT output resistance ro
20V
20 IB 470k 0.7 IB 0.22k 0.33k
470k 2.2kW
W IC 12 0.7
IB 0.035mA
IB vo 470k 140 0.55k
vin b=140 IC IB 140 0.035mA 4.94mA
ro=40kW
0.22kW 26mV
re 5.26 re 140 5.26 1080 0.737k
4.94mA
0.33kW CE
Vin
Vin Ib 0.737k 140Ib 0.22k Ib
51.537k
Iin vo Rin 470k // Vin / Ib 470k // 51.537k 48.3k
Io
vin Ib Ro RC // ro RC 2.2k (ro neglected)
bre 140Ib 2.2kW
V 140Ib 2.2k 283k
AV o
470kW 0.737kW
5.98
0.22kW Vin Ib 51.537k 1.08k
I V /R R 48.3k
AI o o C AV in 5.98 131.29
Iin Vin / Rin RC 2.2k
181
4. Analysis of Voltage divider Bias Amplifier
Connecting R1 and R2 at the Base of the BJT will have more stabilized
dc conditions than a single RB. The input resistance Rin becomes lower
but voltage gain of the amplifier is not affected.
No RE used for both Single RE used for Single RE used for Both RE1 and RE2 are used
dc and ac only dc calculations both dc and ac for dc calculations and
calculations. as CE is short in ac calculations only RE1 for ac calculation
equivalent circuit. as CE is short in ac182
equivalent circuit.
Example:
Find the AV , Rin , Ro , AI of the given Voltage divider Bias amplifier.
Neglect the BJT output resistance r o Io 22V
6.8kW
56kW
Iin vo
b=90
vin ro=40kW
8.2kW
1.5kW
Rin Ro
Iin Ib vo
Io
vin I I
6.8kW VBB IBRB 0.7 IC IB RE C RB 0.7 IC C RE
56kW 8.2kW
1.5kW
IC
VBB 0.7
R
2.8 0.7
7. 15k
1.33mA taking 1 1
56k 8.2k (1 1 )RE B 1.5k 90
Rth RB 7.15k and
64.2k 26mV 26mV
22 8.2k re 19.55 re 90 19.55 1.759k
Vth VBB 2.8V IC 1.33mA
56k 8.2k
Vin
Vin Ib 1.759k 90Ib 1.5k Ib
136.76k
vo
Iin Ib Io Rin 7.15k // Vin / Ib 7.15k // 136.76k 6.79k
vin
90Ib 6.8kW Ro RC // ro RC 6.8k (ro neglected)
bre
7.15kW
1.759kW V 90Ib 6.8k
1.5kW AV o 4.475
Vin Ib 136.76k
I V /R R 6.79k
R1//R2 = RB AI o o C AV in 4.475 183
4.47
Iin Vin / Rin RC 6.8k
Miller’s Theorem
Miller’s Theorem can be used whenever an impedance is connected
between two nodes having different input and output voltages.
I1 I2 I1 I2
Z
V1 V2 V1 ZM1 ZM2 V2
V V Z Z
V V2
I1 1
V V1
and I2 2 ZM2 2 2
Z Z I2 V2 V1 1 V1
V2
V V Z Z
ZM1 1 1 Ro
I1 V1 V2 1 1 AV
Z Z
Rin V
V2
1 V 1 AV Where AV 2
1 V1
184
5. Analysis of Feedback Bias Amplifier
Feedback from Collector to Base by RB creates a low input resistance Rin but a
very good dc and ac stabilization is an important part of this amplifier.
+
RC ICR C Io VCC
RB -
I +I
RB
C B RC vo
IC RB
IB + vo
VCE
VCC
Iin vin Iin Ib Io
VB IB
- bre bIb RC
+ vin
RE IERE Ro
- Rin RE Rin RE
Ro
RB RB
Ro RC // RM2 RC // RC //
1 R
1 1 C
AV RE
V Ib RC RC RC
AV o
Vin Ib re Ib RE re RE re RE
RB
// RE
RC
1
Io Vo / RC Rin RC RE
AI AV
Iin Vin / Rin RC re RE RC
186
Example:
Find the AV , Rin , Ro , AI of the given Feedback Bias amplifier. Take
IB<<IC and neglect the BJT output resistance r o
9V
Io
2.7kW
180kW
vo
Iin IB
IC b=200
9 180k 0.7 IC 2.7k (IB IC ) vin
200 ro=¥
9 0.7 26mV Rin
IC 2.3mA re 11.3 Ro
3.6k 2.3mA
V Ib RC R 2.7k RB
AV o C 238.9
Vin Ib re re 11.3 vo
RB 180k vin Iin Ib Io
Rin RM1 // re // 200 11.3 0.563k bre
1 Av 1 238.9 bIb RC
RB 180k
Ro RM2 // RC // 2.7k // 2.7k 2.66k Rin
1 1 1 1 Ro
Av 238.9
I R 0.56k
AI o AV in 238.9 49.55
Iin RC 2.7k vo
bIb
vin Iin Ib Io
bre RC
RM1 RM2
Rin
Ro
187
6. Analysis of Emitter Follower Amplifier
Taking the output voltage at the Emitter instead of Collector of the BJT
will create different ac parameters compared to Fixed bias and Emitter bias
amplifier especially in voltage gain which will now unity. The output
resistance will become very small. Input resistance is the same as Emitter
bias amplifier.
VCC
Iin IB
bIB
RB
Vin Ib re Ib RE To find Ro short Vin and find Ro Vo / Io // RE
V Vo I re
Rin RB // in RB // re RE b re Ro Vo / Io // RE re // RE
Ib Io Ib Ib
V Ib RE RE Rin R // re RE
AV o 1 re RE AI AV 1 B
Vin Ib re Ib RE re RE RE RE
188
Example:
Find the AV , Rin , Ro , AI of the given Emitter Follower amplifier. Take
IB<<IC and neglect the BJT output resistance r o
16V
270kW
b=110
Iin IB ro=50k
dc analysis
vin
IC vo
16 270k 0.7 IC 2.7k (IB IC ) Io
110
Rin 2.7kW
16 0.7 26mV Ro
IC 2.97mA re 8.75
5.15k 2.97mA
ac analysis
V
Iin Vin Ib re Ib RE in re RE
IB
bIB
Ib
vin bre
vo V
RB Io Rin RB // in 270k // 1108.75 2700 270k // 298k 141.65k
Ib
Rin RE
Ro V Ib RE RE 2700
AV o 1
Vin Ib re Ib RE re RE 8.75 2700
Ib vo
Ro RC bIb
bre Io
V Ib re RC
Rin RE // in RE // RE // re -bIb Iin vin
I I
b b
Ro
RE
Vin Ib re Rin
V Ib RC RC
AV o
Vin Ib re re
I R R R // re RE // re
AI o AV in C E
Iin RC re RC re
191
Example:
Find the AV , Rin , Ro , AI of the given Common Base amplifier. Take
IB<<IC and neglect the BJT output resistance r o
14V
Io
2.2kW
470kW vo
IB
b=140 Ro
IC Iin
14 470k 0.7 IC 1.2k (IB IC ) vin
140 10mF
14 0.7 26mV 1.2kW
IC 2.92mA re 8.9 Rin
4.56k 2.92mA
Ro RC 2.2k
V Ib re
Rin RE // in RE // RE // re 1.2k // 8.9 8.9
I b I b
192
DC and AC Load Line Analysis
193
Transistor Amplifiers
Although in modern electronics, amplifiers are more
conveniently implemented using integrated circuits (IC) like
operational amplifiers, understanding of transistor amplifiers is
useful as
they serve as the building blocks of integrated-circuit amplifiers.
they are used in high frequency applications e.g. in radio
communications circuits, where discrete transistor amplifiers are
still popularly in use.
Linear operation:
vin (v) vout (v)
Output signal is an amplified
replica of the input signal
t(s) t(s) with 180o out of phase.
A
Or IB = (VBB –VBE) / (RB + βDC RE) This is the biasing base current.
Applying KVL around the output circuit we obtain the dc load line
equation:
VCC = RC IC + VCE + RE IE For βDC 50, assume IE = IC,
RC VRC
IB RB VB VC
VCE VCC
VRB VBE VE
VBB VRE
RE
IE
Potential at base:
VB = VBB – VRB = VBB – IBRB
Or VB = VRE + VBE = IERE + VBE
Potential at emitter:
VE = IERE
Or VE = VCC – VRC– VCE= VCC–ICRC–VCE
Or VE = VBB – VRB– VBE= VBB–IBRB–VBE
Potential at collector:
VC = VCC – VRC = VCC – ICRC
Or VC = VRE + VCE = IERE + VCE
Exercise 1 Solution
Step 1: Determine IB.
Find IB, IC, VCE and determine the Apply KVL around the input circuit:
operating region of this transistor VBB = RBIB + VBE + βDC IB RE
and indicate Q-point. 5V = 52kΩIB+0.7V+100 x 2.2KΩ IB
DC=100 IB=(5V–0.7V)/(52kΩ+100 x 2.2KΩ)
= 15.8A
IC
Step 2: Determine the collector current I C.
IC= βDC IB= 100 x 15.8A= 1.58 mA
RC VRC
4.7K Step 3: Determine VCE.
RB +
Ω
IB
52K VCE VCC Applying KVL around the output circuit
VCC = RCIC + VCE + REIE
Ω + 20V
IE 20V = 4.7KΩIC + VCE + 2.2KΩIE
VRB VBE
VBB Since βDC is large, IE = IC
5V RE VRE VCE=20V – 4.7KΩIC – 2.2KΩIC
2.2KΩ VCE=20V–4.7KΩ x 1.58mA–2.2KΩ
x1.58mA = 9.098V
Step 5: find VE
Because DC>50, IE=IC
∴VE=IERE=ICRE=1.45mA 1.8KΩ=2.61V
DC operating point (Q-point)
A transistor must first be dc biased before it can be operated as an ac
signal amplifier.
A transistor, like a diode, allows current to flow only in one direction.
In order to reproduce and amplify a fluctuating input current signal,
the transistor must first be input with a dc base current such that the
fluctuating signal can be imposed correctly onto the base current.
iC = IC + ic
C
iB = IB + ib
B
E
ib iB
IB
+ ib
time IB
o + =
_
Fluctuating input ac time time
o o
current signal DC base current Resultant base current
DC operating point (Q-point) (cont’d)
After setting the desired dc base current, the input current
signal at the base terminal is amplified, and its wave-shape is
accurately reproduced in the collector current.
The output signal iC has a larger amplitude than the input
signal iB.
The transistor is said to be biased when a certain dc current
and voltage conditions are established.
The dc collector current IC and the dc collector-to-emitter
voltage VCE are used to specify this conditions.
iC
iB
Ic
C
iB + iC = β iB
B vCE
E -
time time
DC load line
The dc load line is a graph that represents all the possible
combinations of IC and VCE for a given amplifier.
Q-point on the dc load line that indicates the values of VCE and IC
for an amplifier at rest, (Quiescent means at rest).
A questcent amplifier is one that has no ac signal applied and
therefore has constant dc values of IC and VCE.
To determine the Q-point IC (mA)
on dc load line, we must IB = 90
know: IC(sat)
IB = 80 dc load line
--the biasing base current, mA
IB from the biasing or input mA IB = 70
circuit;
8
--the dc load line of the mA I = 60
7 B
transistor circuit.
A straight line intersecting the 6 mAIB = 50
vertical axis at approximately
IC(sat) and the horizontal axis at 5 Q-point mAIB = 40 (IBQ)
VCE(off). ICQ
4 mAI = 30
IC(sat) occurs when transistor B
operating in saturation region 3 mAI = 20
VCC B
I Csat 2 mA
RC VCE 0
IB = 10
VCE(off) occurs when transistor 1
mA IB = 0 mA V (V
operating in cut-off region CE
IC (mA)
IB = 90
IC(sat) IB = 80
mA
8 mA IB = 70
7 mA I = 60
B
6 mAIB = 50
5 Q-point
mAI = 40 (IBQ)
ICQ B
Dc load line
4 mAI = 30
B
3 mAIB = 20
2
mA
IB = 10
1
mAIB = 0 mA V
CE
5 VCEQ 10 15 VCE(off) (V)
DC load line equation The KVL around the output loop
equation is given by the following
expression:
VCC = IC RC + VCE + IE RE
es
Wh
RC RE RC RE
C
VCC
I C(sat)
RC RE When (RC + RE) increases, dc
load line becomes less steeper.
When (RC + RE) decreases, dc
r ea E )
se s
inc
IC
dc load line equation:
es
en 1 VCC
as
Wh
CC IC VCE
re
VCC
V
inc RC RE RC RE
I C(sat)
RC RE
V en
es
Wh
uc
red C
C
VCE
Origin (0,0) VCC VCC1
VCC2
Mid-point bias
At midpoint bias,
IC= IC(sat) /2, and VCE = VCC/2
or IC = 0.5 IC(sat) , and VCE = 0.5 VCC
Mid-point bias (cont’d)
IC (mA)
ic = βib ib(µA)
IC(sat)
Q point at
ICQ midpoint biasI time
BQ
0.5IC(sat)
time
DC equivalent circuit
To transform the amplifier circuit to its dc equivalent circuit, the
following procedures should be followed.
1. Reduce all ac sources to ZERO.
2. Remove all capacitors from the circuit.
3. Replace all inductors or coils with a wire (or short-circuit).
4. Redraw the amplifier circuit.
DC equivalent circuit is used to determine the dc biasing currents I B & IC
and the dc biasing voltage VCE of the amplifier circuit.
RC RC
C C
Vout
B B
E RB E
RB Equivalent to
Vin RL
RE RE
VBB VBB
DC equivalent circuit (cont’d)
VCC
VCC
R1 RC R1 RC
C
B Equivalent to
E
Vin R2 RE R2 RE
DC equivalent circuit exercise 1
Draw dc equivalent circuit of the
following amplifier.
VCC VCC
RC RC
RS C Vout C
B B
E E
Vin
RB RL Equivalent to RB
RE
RE
VBB VBB
DC equivalent circuit exercise 2
Draw dc equivalent circuit of the
following amplifier.
VCC
VCC
R1 RC R1 RC
C
B
Equivalent to
E
Vin R2 RE RL R2 RE
Analysis for Voltage Divider bias
A voltage-divider biased BJT amplifier is shown below.
It is the most commonly used biasing circuit because it can have
voltage gain, current gain or power gain.
Advantages of voltage divider bias
® It has a stable Q point.
® Single dc power supply VCC.
Disadvantage of voltage divider bias method
® The biasing circuit is more complicated
+VCC
R1 I1 IC RC
Cin Vout
IB
Q Cout
Vin R2 I2 RE
IE
Analysis for Voltage Divider bias (cont’d)
Step 1: Convert dc equivalent circuit to Thevenin’s equivalent biasing
circuit.
+VCC +VCC
RTH
R1 RC A
R1
A A VTH
Thevenin’s equivalent
Q
R2 R2 B
RE
B B +VCC
DC equivalent DC biasing circuit
IC
RC
circuit
The dc biasing circuit formed by VCC, R1 & R2 across
RTH IB
point A & B is first converted to its Thevenin’s
Equivalent. Q
The component values of the Thevenin’s Equivalent A
Circuit are given as follows: VTH IE RE
R 2 VCC R 1R 2 B
VTH R TH
R1 R 2 R1 R 2
Thevenin’s equivalent
biasing circuit
Analysis for Voltage Divider bias (cont’d)
Step 2: Determine the base current IB from Thevenin’s
equivalent biasing circuit.
10k RE +I _ + 100
= 3.75V
V BE_ RTH =R1 x R2/(R1+R2)
VTH +
B
2.2K +
_ IE RE = (10x22)/(10+22)
_ 2.2K = 6.88 k
Voltage divider biasing CE amplifier Exercise (***)(cont’d)
Step 3: find IB VCC = 12V
IB = (VTH – VBE) / (RTH + βDC RE )
=(3.75–0.7)/(6.88KΩ+100 2.2KΩ)=13.44A
RC
RTH
2.7k
Step 4: find IC 6.88KΩ
bDC
IC= βDC IB =10013.44 A=1.344mA +I _ + 100
VBE_
VTH +
B
Step 5: find VCE, because DC>50, ICIE +
_ I RE
VCE=VCC–IC(RC+RE)=12–1.344mA(2.7+2.2)KΩ 3.75V E
_ 2.2K
=5.414V
Q-point is at (5.414V, 1.344mA) IC(mA)
Saturation
Step 6: draw dc load line and IC(sat)=2.449 point
indicate Q-point on dc load line
IC(sat)=VCC/(RC+RE) Q
1.344 DC Load
=12/(2.7+2.2)KΩ
Line Cutoff
=2.449mA
point
VCE(off)=VCC=12V
V (V)
0 5.414 VCE(off)=12V CE
AC equivalent circuit
To transform the amplifier circuit to its ac equivalent
circuit, the following procedures should be followed.
1. Reduce all dc sources to ZERO.
2. Replace all capacitors with a wire (or short-circuit).
3. Remove all inductors or coils from the circuit.
4. Redraw the amplifier circuit.
VCC
R1 RC C
C Vout B Vout
B
E
E Equivalent to Vin
RC
Vin R2 RE R1 R2
AC small-signal equivalent circuit
In order to better visualise the operation of a transistor in an
amplifier circuit, it is often useful to represent the BJT by an
equivalent circuit.
An equivalent circuit uses various internal transistor
parameters (usually specified by the manufacturer of the BJT)
to represent the BJT’s operation.
We would limit ourselves to one type of BJT’s model:
- The Norton Equivalent of Eber Moll’s model
C
C
B
b r '
B ac e b i
ac b
E
E
Norton equivalent of Eber Moll’s model
AC small-signal ac equivalent circuit:
C
equivalent circuit
B Vout
(cont’d)
Using the Norton equivalent form of E
Vin RC
the Eber Moll’s BJT model convert
R1 R2
the ac equivalent circuit to its ac
small signal equivalent circuit.
E
AC Analysis of a Large-Signal
Transistor Amplifier
When the small-signal peak-peak ac emitter current is less than 10% of the dc quiescent
emitter current, the Eber Moll’s equivalent circuit can be used.
When the small-signal does not satisfy the above 10% condition, large-signal analyzes
will be used to determine the BJT amplifier performance. The out-put signal could be
distorted.
B ib
vce
E
RC vout RL
vin
R1 R2 ie
Construction of the AC
Load Line
The transistor amplifier has two different loads
for dc and ac conditions. They are the dc load RDC
and ac load rac respectively. Hence, dc and ac
load lines are drawn on the output characteristic.
The dc load line is used to determine the
operation point. The ac load line is used to
analyze signal operation such as gain and
maximum signal output.
Drawing the ac load line can be done by finding
the ac saturation and cut-off points. This method
is known as ac Saturation and cut-off method.
Construction of the AC Load Line (cont’d)
The ac load resistance rac is defined as:
rac = RC // RL = RC RL / (RC + RL)
and using Ohm’s Law: v vce
ic
out
rac rac
where: ic is the change in collector current.
Hence, – (1/rac) is the gradient of ac load line on the output characteristic.
(RC + RE) is known as the dc load resistance RDC, and – (1/RDC) is the gradient of
dc load line.
1/rac is always relatively larger than 1/RDC.
ic
C
ib
B vce
E
RC vout RL
vin
R2 ie
R1
DC and ac load lines
Distance y is: ic(sat) – ICQ = ( VCEQ / rac ) where: (1/rac) = (y / VCEQ )
therefore ic(sat) = ICQ + ( VCEQ / rac )
Distance x is: VCEQ – vce(off) = ( ICQ rac ) where: (1/rac) = (ICQ / x)
therefore vce(off) = VCEQ + (ICQ rac )
Using above equations to calculate the values of ic(sat) and vce(off) With these two points the ac
load line can be drawn passing through
I (mA)
the Q-point.
C
VCC V
IC(sat) CC
R C R E R DC
ic y
ic(p) Q-Point
ICQ
DC Load Line
VCE(V)
0
VCEQ x vce(off) VCE(off) = VCC
Graphical Analysis of the AC Operation
Using ac load line, we can
estimate the following:
– current gain, IC (mA)
– maximum
unclipped signal.
AC Load Line
ic(sat) = 6 mA
ib(p) = 10µA
IBQ = 40µA
ib
ic
t
ic(p) =1mA
ICQ = 2.5 mA
t Q
DC Load Line
VCE (V)
0 VCEQ = 7 V vce(off) = 12 V
vce
t
From Figure below,
Example 1 (a) Current Gain, Ai = βac= ic(p) / ib(p) = 1mA/10µA = 100
(b) Maximum unclipped output current signal:
Maximum ic swing = ic(p) = 2.5 mA – 0 mA = 2.5 mA
IC (mA)
AC Load Line
ic(sat) = 6 mA
ib(p) = 10µA
IBQ = 40µA
ib
ic
t
ic(p) =1mA
ICQ = 2.5 mA
t Q
DC Load Line
VCE (V)
0 VCEQ = 7 V vce(off) = 12 V
vce
t
Example 1 (cont’d)
when 0 < ib(p) < ib2(p) , ic is
ib3(p)
unclipped.
ib
When ib2(p) < ib(p) < ib3(p) , part ib2(p)
VCE (V)
0 VCEQ vce(off)
vce
t
vce2(p)
vce1(p)
Example 1 (cont’d)
Solution: IC (mA)
(a) The gradient of ac load line is:
(1/rac) = ic(sat) / vce(off) AC Load Line
ic(sat) = 9 mA
rac = vce(off) / ic(sat)
= 10 / 9m
ICQ = 6.93 mA Q
= 1.11 k
(b) Since Q-point is set closer to the
saturation point, therefore the
maximum unclipped output voltage swing is:
vce(p) = VCEQ = 2.3 V
and maximum unclipped output current
swing is:
0
ic(p) = 9 mA – 6.93 mA = 2.07 mA VCEQ vce(off) VCE (V)
= 2.3 V = 10 V
Amplifier Concepts
An amplifier is a two-port network that takes an input signal and
produces at its output a replica of the signal of higher magnitude.
Electrically, an amplifier consists of passive components (resistors,
capacitors) and active components (BJT and FETs)
Vout(t)
vin(t)
RL RL rin
vout Av(oc)vin Av(oc) vs
RL rout RL rout rin rs
rS rout
signal vs RL
vin rin Av(oc) vin vout
source
Effect of source and load on voltage amplifier
(cont’d)
The overall gain of the amplifier system, denoted as Av, is
defined as
Output voltage signal across the load
Av
Input voltage signal produced by source
vout RL rin
Av(oc)
vs RL rout rin rs
This equation shows that the overall gain Av is influenced by parameters outside
of the amplifier. These parameters are:
rin rs rin
Similarly, when
r rin is very
r large ( ),
in
in
1
rin rs rin
Hence,
Ideally, raout
When voltage rin =rout,= the
amplifier
= 0 and 0 and rin = . gain Av = Av(oc), making it
overall
independent of the signal source and load resistances.
Example
rS rout
In circuit, it is given
that rs = 100 Ω,
rin = 1 KΩ, Rout = 70 Ω,
RL = 20 kΩ, signal
vs vin rin Av(oc) vin vout RL
source
Av(oc) = 20 and vs is a
sinusoidal signal of
amplitude 0.5V,
determine the
amplitude of vin, vout
and the overall gain,Av.
rin 1000
vin( P ) vs ( P ) ( 0.5 ) 0.455 [V]
rin rs 1000 100
rin RL
Av Av(oc)
rin rs RL rout
1000 20000
( 20 ) 18.12
1000 100 20000 70
vout( P ) Av vs ( P ) 18.12 x 0.5 = 9.06 [V]
Voltage amplifier exercise
In a voltage amplifier, given that rS rout
rS=50Ω, rin=2.2kΩ, rout=50Ω,
RL=50KΩ, AV(OC) =18. When
source signal is 0.3sin(2ft) signal
vs vin rin Av(oc) vin vout RL
determine the amplitude of Vin, source
Solution:
rin 2200
vin( P ) vs ( P ) ( 0.3 ) 0.293 [V]
rin rs 2200 50
RL 50000
vout( P ) Av(oc)vin( P ) 18 0.293 5.27 [V]
RL rout 50000 50
vout( P ) 5.27
Av = 17.57
vs ( P ) 0.3
Current amplifier
For a current amplifier, both the input and the output signals are current
signals.
Applying current divider rule at both the input and the output loops,
rs
iin is
rs rin
rout rout rs
iout Ai ( sc )iin Ai ( sc ) is
rout RL rout RL rs rin
where Ai(sc) is the short-circuit current gain of the amplifier.
rout rs
Overall current gain Ai Ai ( sc )
rout RL rs rin
i in i out
Ideally, a current amplifier
rout = Ω and rin = 0 Ω. is
rs r in Ai(sc) i in r out RL
Therefore Ai= Ai(sc)
current amplifier
Rin and Rout of BJT amplifier
Make comparison between the a.c. small-signal BJT amplifier circuit
and the current amplifier circuit.
A.c. small-signal amplifier circuit:
RS ib B C
vout
R1//R2 ic
vin b r' b i RC
ace ac b
We can conclude the followings:
E rin = R1 // R2 // (βac re’ )
rout = RC
Current amplifier circuit: Ai(sc) iin = βac ib
i in i out
is Ai(sc)i in
rs r in r out RL
Summary
1. Use the transistor for amplifying a signal without distortion, biasing such that the base-emitter
junction is sufficiently forward biased (V BE0.7V).
2. Quiescent point (Q-point) is a dc operating point for the transistor.
3. The procedure to form dc equivalent circuit is:
• Reduce all ac signal sources to zero; i.e. replace a voltage source by a short circuit, and a
current source by an open circuit.
• Replace all capacitors by open circuits.
• Replace all inductors by short circuits (if any).
4. Voltage-divider bias ( change the circuit to Thevenin’s equivalent circuit):
VTH = (VCC x R2) / (R1 + R2) RTH = R1 // R2
5. Biasing Equation (transistor dc bias circuit):
Apply KVL on the input loop (IB and VBE),
VBB = IBRB + IERE+ VBE
For a transistor with large βDC(>50),
VBB = IB( RB + βDCRE) + VBE
Using this equation to determine IB, than using
IC =βDC IB to determine IC.
6. DC load line equation (transistor dc bias circuit with RE):
Apply KVL on the output loop (IC and VCE),
VCC = ICRC + IERE+ VCE
For a transistor with large βDC(>50), IE = IC,
VCC = IC ( RB + RE) + VCE
Using this equation to determine VCE.
Summary
7. Power dissipated by the BJT, PD = VCEQ x ICQ
8. Draw the dc load line on the output characteristic:
i) Point on X axis, let IC = 0, VCE(OFF) = VCC
ii) Point on Y axis, let VCE = 0, IC(SAT) = VCC / (RC + RE)
9. Effect of changes in RC or RE on dc Load Line:
The gradient of the dc load line is equal to 1/(R C + RE).
Changes in RC or RE or both resistors (RC + RE) will affect the gradient of the d.c. load line.
However, the x-axis intersect point will remain pivot at V CE = VCC.
10. Effect of changes in VCC on dc Load Line:
The gradient = 1/(RC + RE) of the dc load line will remain unchanged while the supply voltage
VCC under go changes. The dc load line moves parallel away or towards the origin of the co-
ordinate when VCC increases or reduces.
11. BJT as a switch:
The transistor is ‘on’ and it is in the saturation region when the Vin is high.
The transistor is ‘off’ and it is in the cut-off region when the Vin is low.
12. Ideally, for a voltage amplifier rin = Ω, and rout = 0Ω.
13. Ideally, for a current amplifier rin = 0Ω, and rout = Ω.
251
Design of BJT Amplifiers
1. Types of BJT amplifiers
2. BJT amplifier biasing design
3. BJT Optimum Q point
4. CE amplifiers and Design
5. CE with RE amplifiers and Design
6. EF amplifiers and Design
7. CB amplifiers and Design
8. Design of RC Coupled BJT amplifiers
252
Transistor Amplifiers
Although in modern electronics, amplifiers are more
conveniently implemented using integrated circuits (IC) like
operational amplifiers, understanding of transistor amplifiers is
useful as
they serve as the building blocks of integrated-circuit amplifiers.
they are used in high frequency applications e.g. in radio
communications circuits, where discrete transistor amplifiers are
still popularly in use.
254
1. Types of BJT amplifiers
VCC
VCC
Rac = Rc//RL RC Rac =( Rc//RL)+RE
R2 RC
Rdc = Rc+RE vo Rdc = Rc+RE R2
Ri CB CC vo
Ri CB CC
RL
vi R1 RL
RE CE vi R1
RE
(a) Common Emitter (b) Common Emitter with RE
High AV and low Ri
Low AV and high Ri
Voltage amplifications
VCC Stability
VCC applications
R R R1 R R1 R
RB R1 // R2 1 2 and VBB Vcc 2 Vcc Vcc B
R1 R2 R1 R2 R2 R1 R2 R2
R1 V R V R R2 R V /V RB
VBB VCC CC 1 2 CC 1 2 R1 B CC BB
R1 R2 VBB R1 VBB R1 VCC / VBB 1 VCC / VBB 1 1 VBB / VCC
I V 0.7
VBB I B RB 0.7 IC RE C RB 0.7 IC RE IC BB
RB R
E R1 Design equation
VBB 0.7 V 0.7
If RB 0.1 RE then IC BB or VBB 1.1 IC RE 0.7
0.1 RE 1.1 RE
RE
RB Design condition VBB Design equation
VCC
3. BJT Optimum Q point
IC
Rac = Rc//RL RC IC
Rdc = Rc+RE R2
Vcc/Rdc
vo
Ri CB CC
Rdc
RL
vi R1 VCE
Vcc
VCE
CE Vcc
RE
common emitter 1. Find VCC point 2. Draw Rdc line from VCC
IC IC IC
Rac Rac
IBQ IBQ
ICQ ICQ Q ICQ
Q Q
Rdc ICQ Rdc Rdc
VCEQ VCEQ
VCE VCE VCE
Vcc VCEQ V Vcc Vcc
3. Locate Q-pt at crossing 4. Draw Rac line passing Q- 5. Note ICQ and VCEQ
of IB and Rdc line pt. DV = RacxICQ
6. When sine wave signal is applied to the Base circuit of BJT
IC
Rac
ICQ Q
Rdc
IC(pp) VCEQ
VCE
Vcc
VCE(pp)=VO(pp)
6. sine wave will vary IBQ to produce IB(pp) and therefore IC(pp)
and VCE(pp) will be produced. Now VCE(pp) will becomes output
voltage at the collector.
If Q point is at High IC
When the Input wave increases IB(pp) , then VCE(pp) will increase
IC
Rac
ICQ Q Rdc
VCEQ
VCE
Vcc
VCEQ=VCC-ICQRdc ICQRac
When the Input wave increases IB(pp) , then VCE(pp) will increase
IC
Rac
Rdc
Q
ICQ
VCEQ
VCE
Vcc
VCEQ=VCC-ICQRdc ICQRac
upper half cycle of the
output voltage wave will
be clipped due to
cutoff IC
BJT Optimum Q point Design Equation
Design of Optimum Collector current
IC
(c) If the Input wave increases
Rac IBQ , then both ICQ and VCEQ will
increase where both half cycle of
ICQ Q the output voltage wave will be
Rdc clipped simultaneously due to
cutoff and saturation in the case
VCEQ
shown because of optimum
Vcc collector current.
R
VBB IBRB 0.7 ICRE IC RE B 0.7 VBB Design equation for any RB
VCC V
R2 RB CC R2 Design equation
VBB
RC
R2
RB R1 Design equation
R1
1 VBB / VCC
VCC
io
RC
R2 vo CC
C vo
Ri iin CB
B iL
Ro
E RL
vi vin R1
Rin RE CE
vi vin RB RC RL
v ib RC // RL R // RL re
Av o C Rin Ro
vin ib re re E
v v
Ro o RC
vo vo
v Rin Rin in RB // re io
iL RL AR iin
in
Ai v in
iin vin RL RL
Rin
CE amplifier design equations
(in addition to previous chapter upon dc design equations)
VCC
io
RC Circuit
R2 vo CC
C vo
Ri iin CB v R // RL Voltage gain
B iL Av o C
vin re
Ro
E RL
vi vin R1
Rin RE CE v
Rin in RB // re Input resistance
iin
v
Ro o RC Output resistance
io
AR v
Ai v in where RL o
RL iL Current gain
Example 1 CE amplifier design
Draw the (CE) amplifier circuit
Given specifications are: b = 200, VCC = 10V, design with maximum (optimum)
output voltage swing , RC= RL = 2kW, RE = 0.4kW, Ri = 0, Rin = 1.5kW
Design bias R1 and R2, find voltage gain,and undistorted output voltage swing.
VCC 10
IC 2.94 mA VCC
Rac Rdc 1 k 2.4 k
26 26 RC
re 8.84 re 200 8.84 1768 R2
IC 2.94 vo
1768 1500
RB // re RB // 1768 Rin 1500 RB 9.895 k
1768 1500
RL
R vi
VBB I B RB 0.7 IC RE IC RE B 0.7 vin R1
RE CE
2.94 0.4 k 9.895
200 0.7 2.02V
RB 9.895 V 9.895 10
R1 12.4 k
VBB
1 V 1
2.02
10 R2 RB CC
VBB 2.02
49 k
CC
RC // RL 1000
vo (pp) 2IC Rac 2 2.94mA 1k 5.88V Av 113 .12
re 8.84
Example 2
• Draw the (CE) amplifier circuit
• Given specifications are: b = 200, VCC = 10V, optimum output voltage
design, RC= RL = 2kW, RE = 0.4kW, Ri = 0.1kW
• Design bias R1 and R2 , so that Av = vo / vi > 100
• Find undistorted output voltage swing.
VCC 10
IC 2.94 mA VCC
Rac Rdc 1 k 2.4 k
R
VBB I B RB 0.7 IC RE IC RE B 0.7 2.94 0.4 k 1.327 200 0.7 1.896V
RB 1.327 V 1.327 10
R1 1.637 k
VBB
1 V 1 1.896
10 R2 RB CC
VBB 1.896
7 k
CC
io
RC
R2 vo CC
C vo
Ri iin CB
B iL
Ro
E RL
vi vin 3. RE is active as
R1
Rin RE there is no CE
io
RC Circuit
R2 v o CC
C vo
Ri iin CB R // RL
B iL v Voltage gain
Av o C
Ro vin RE
E RL
vi vin R1
Rin RE
v
Rin in RB // re RE
iin
Input resistance
v
Ro o RC Output resistance
io
AR v
Ai v in where RL o
RL iL Current gain
CE with RE amplifier design
Example 1
Draw the (CE with RE ) amplifier circuit. Given specifications are: b = 200, VCC =
11.17V,, optimum output voltage swing, RC= RL = 2kW, RE = 0.4kW, Ri = 0.1kW.
Design bias R1 and R2 , so that Rin = vin / iin = 10 kW
find undistorted output voltage swing and voltage gain A v = vo/vin and AvT = vo/vi
VCC 11.17 V VCC
IC 2.94 mA
Rac Rdc 1.4 k 2.4 k io
RC
re
26
26
8.84 (re RE ) 200 408.84 81.76k
R2 vo CC
IC 2.94 C vo
Ri iin CB
81.76 10 B iL
RB // (re RE ) Rin 10k RB 11.42k Ro
81.76 10 E RL
R vi vin R1
VBB IBRB 0.7 IC RE IC RE B 0.7
Rin RE
2.94 0.4k 11.42 200 0.7 2.04V
RB 11.42k
R1 13.97k V 11.42 10
1
VBB
V
1 2.04
11.17
R2 RB CC
VBB 2.04
55.98k
CC
vo (pp) 2IC Rac 2 2.94mA 1k 5.88V Note RB 0.1 RE is not used
as RB is to be found from Rin 10 k
RC // RE 1k
v o / vin 2.45
re RE 0.408
Rin 10 k
v o / vi vo / vin 2.45 2.42
Ri Rin 10.1 k
6. EF amplifier and Design
VCC
1. input to the amplifier 2. output of the
is at Base amplifier is at Emitter
R2
Ri iin CB
CC vo
vi vin
R1 RL
RE
iL
Rin Ro
ib
vin
ib re ib RE // RL vin
RB re E
iL v
Rin RB // vi io o
iin ib RE RL
RB // re RE // RL Rin Ro
v vo
Ro RE // o RE //
io ib
ib re ( RB // Ri ) ( RB // Ri )
RE // RE // re
i b
vo vo
iL RL v Rin AR
in
Ai v in
iin vin RL RL
Rin
EF amplifier design equations
V
(in addition to previous chapter upon dc design equations) CC
R2
Ri iin CB
Circuit CC vo
vi vin
R1 RL
RE
iL
Rin Ro
Voltage gain v
Av o 1
vin
vin
Input resistance Rin RB // (re RE // RL )
iin
Output resistance v R // Ri
Ro RE // o RE // B re
io
Current gain AR v
Ai v in where RL o
RL iL
EF amplifier design
Example 1
Draw and design EF amplifier with following specifications:
Specified RL = 100 W, b = 60, VCC = 12V
Design RE , R1 , R2 , so that Rin = 1kW. Find Ro if Ri =100W and Vo (pp)
VCC
For max power transfer , RE RL 100
VCC 12
IC 80 mA R2
Rac Rdc ( 100 // 100 ) 100
Ri iin CB
re 26 mV / 80 mA 0.33
Rin 1 k RB // re RE // RL vin
CC vo
vi R1
1000 3020 RL
1000 RB // 60 0.33 50 RB 1.5 k RE
3020 1000 iL
R 1.5 k Rin Ro
VBB 0.7 IC B RE 0.7 80 mA 0.1 k 10.7 V
60
RB 1.5
V 1.5 12 R1 13.85 k
R2 RB CC
VBB 10.7
1.68 k
1
VBB
VCC
1
10.7
12
( RB // Ri )
Ro RE // re
( 1.5 k // 0.1 k )
100 // 0.33 0.33
60 vo ( pp ) 2 IC Rac 2 80 mA 0.05 k 8V
Example 2
Draw and design EF amplifier with following specifications:
Specified b = 60, Rin = 10kW, IC = 10mA. Design VCC , RE = RL, R1 , R2 , so that
VCC
Ai = 10, and find Ro if Ri =100W and Vo (pp)
AR 1 10 k
Ai v in 10 RL 1 k RE R2
RL RL Ri iin CB
re 26 mV / 10 mA 2.6 CC vo
Rin 10 k RB // re RE // RL vi vin
R1 RL
10 k 30.15 k RE
10 k RB // 60 2.6 500 RB 15 k iL
30.15 k 10 k
VCC VCC Rin Ro
IC 10 mA VCC 10 mA 1.5 k 15V
Rac Rdc ( 1 k // 1 k ) 1 k
R 15 k V 15 k 15V
VBB 0.7 IC B RE 0.7 10 mA 0.5 k 8.2V R2 RB CC 27.44 k
60 VBB 8.2V
RB 15 k ( RB // Ri )
R1 33 k Ro RE // re
1
VBB
VCC
1
8.2V
15V
( 15 k // 0.1 k )
1000 // 2.6 2.6
60
vo ( pp ) 2 IC Rac 2 10 mA 0.5 k 10V
7. CB amplifier and Design
3.2.1 CB amplifier without CB
VCC
RC
R2 CC
2. output of the amplifier vo
is at Collector
CE Ri RL
ie
R1
RE vin vi
3. Base becomes common to both input and output and the amplifier
is Common Base (CB) amplifier
7.1 CB amplifier analysis (without CB)
First replace VCC with ac ground and all vo
capacitors short.Then replace BJT with C
B
it’s equivalent circuit, label all
components. Calculate Av ,Ri, Ro, Ai, from E Ri RC RL
ie
the equivalent circuit R2 R1
RE vin vi
v ib RC // RL RC // RL
Av o
vin ib RB re RB
Rin Ro
re
B vo
v i RB re C
Rin RE // in RE // b ib ib
ie ib re
R RB E RL
ie RC
RE // B re
vin
RE
AR v
Ai v in where RL o Rin Ro
RL iL
Ro RC
7.2 CB amplifier analysis (with CB)
VCC
vo
RC C
R2 CC B
vo
E Ri RC RL
ie
CE Ri RL vin vi
CB ie RE
R1
RE vin vi
Rin Ro
Rin Ro
B C vo
v R // RL ib
Av o C v R // RL ib
vin RB Av o C re
re RB = 0 vin re
RB=0 E RL
ie RC
R RE vin
Rin RE // B re Rin RE // re
RB = 0
Rin Ro
AR v Ro RC
Ai v in where RL o
RL iL
CB amplifier design equations
(in addition to previous chapter upon dc design equations)
RC RC
R2 CC R2 CC
vo vo
CE Ri RL
Circuits CE Ri RL
ie CB ie
R1 R1
RE vin vi RE vin vi
Rin Ro Rin Ro
Example 1 CB amplifier design
Draw and design CB amplifier without CB with following specifications:
RL = 2k W, b = 100, RE = 400 W, VCC = 24V
Design R1 , R2 , so that Av = 20 and find Ai , Rin and Vo (pp)
VCC
For max power transfer , RC RL 2 k
VCC 24 RC
IC 6.3 mA R2 CC
Rac Rdc ( 2 k // 2 k ) 0.4 2.4 k vo
re 26 mV / 6.3 mA 4.12
R // RL CE RL
1k ie
Av 20 C R1
RB RB
re 0. 004 RE vin
100
RB 0.4 5 k RB 4.6k Rin Ro
R 4.6 k
VBB 0.7 IC B RE 0.7 6.3 mA 0.4 k 3.51V
100
RB 4.6k
R1 5.38 k
1
VBB
V
1
3.51V
24V
V
R2 RB CC
VBB
4.6k 24V
3.51V
31.4 k
CC
R 4.59 k AR 20 44
Rin RE // B re 0.4 // 4.12 44 Ai v in 0.44
100 RL 2000
12.63
VBB2 0.7 12.63 0.05 1.05k 1.4V
200
RB2 1.05
R12 0.93k
V
R22 RB2 CC
VBB2
1.05 12
1. 4
9k V
1 BB2
VCC
1 1.4
12
0.184 0.368
Rin1 0.184k RB1 // re1 RB1 0.368k
0.368 0.184
14.12
VBB1 0.7 14.12 0.05 0.368k 1.405 0.026 1.43V
200
V 0.368 12
R21 RB1 CC 3.1k
VBB1 1.43
RB1 0.368
R11
1
VBB1
VCC
1
1.43
12
0.418k
v (pp) 50.5mV
vin1 (pp) o1 0.465mV 465V
AV1 108.7
How To Use BJT Amplifiers
• More about common-emitter amplifier
– Because the output resistance is quite large (equal to
RL||ro ≈ RL), the common-emitter amplifier is a POOR
voltage driver. That means, it is not a good idea to
use such an amplifier for loads which are smaller than
RL. This makes it not suitable to deliver current to
load.
288
How To Use BJT Amplifiers
• Bad idea — wrong use of common-emitter
amplifier
289
How To Use BJT Amplifiers
• Proper use of common-emitter amplifier
290
How To Use BJT Amplifiers
• How can we use the amplifier in practice?
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How To Use BJT Amplifiers
• Common-emitter amplifier with emitter
follower as buffer
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