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isc RF Product Specification

isc Silicon NPN RF Transistor

2SC2570A

DESCRIPTION Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA

APPLICATIONS Designed for use in low-noise amplifier of VHF ~ UHF stages.

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL PARAMETER VALUE UNIT

VCBO

Collector-Base Voltage

25

VCEO

Collector-Emitter Voltage

12

VEBO

Emitter-Base Voltage

3.0

IC

Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature

70

mA

PC

0.6

TJ

150

Tstg

Storage Temperature Range

-65~150

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ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

2SC2570A

TYP.

MAX

UNIT A

ICBO

Collector Cutoff Current

VCB= 15V; IE= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

0.1

hFE

DC Current Gain

IC= 20mA ; VCE= 10V

40

200

fT

Current-GainBandwidth Product

IC= 20mA ; VCE= 10V

GHz

COB S21e
2

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

0.7

0.9

pF

Insertion Power Gain

IC= 20mA ; VCE= 10V; f= 1.0GHz

10

dB

MAG

Maximum Available Gain

IC= 20mA ; VCE= 10V;f= 1.0GHz

11.5

dB

NF

Noise Figure

IC= 5mA ; VCE= 10V;f= 1.0GHz

1.5

3.0

dB

Vco = 10 V

free Air

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isc RF Product Specification

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'\up0 TOTAL POWER DISSIPATION
600 vs. AMBIENT TEMPERATURE

2SC2570A

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COLLECTOR CURRENT BASE TO EMITTER VOLTAGE

DC CURRENT GAIN

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0.5 0.5

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0.6 0.7 0.8 0.9 Base to Enit ter Voltage Vse (V) INSERTION GAIN vs. COLLECTOR CURRENT

GAINBANDWIDTH PRODUCT COLLECTOR CURRENT :veE=21ov i !

vs.

15

f=1 .0GHz

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0.1.'-+'L..Lll-----'----'---'..LJ..I. --'--L'-='::.J=! 0.5 5 10 50 70 Cdlector Current lc (mA)

0 0.5

5 10 50 70 Collector CUrrent lc (mA)

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Ve< = 10 V lc = 5mA

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isc Silicon NPN RF Transistor

OUTPUT ANDINPUT CAPACITANCE vs REVERSE

2SC2570A
NOISE FIGURE vs. COLLECTOR CURRENT I Ve< = 10 V I I= 1.0 GHz

VOLTAGE I = 10. MHz

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0.5 1 2 5 10 30 Collector to Base Voltage Vcs (V) Emitter to Base Voltage v,. (V) INSERTION POWER GAIN, MAXIMUMAVAILABLE GAIN vs FREQUENCY

20

q;_5

5 10 Collector Current lc (mA)

INSERTIONPOWER GAIN,MAXIMUM AVAILABLE GAIN vs FREQUENCY Vee= 10 V lc = 20 mA

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mn

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2

0 2

0.1

0.2

0.4 0.6 0.81.0

0.1

0.2 0.4 0.6 0.81.0 Frequency I(GHz)

Frequency I(GHz)

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S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50

2SC2570A

S-PARAMETER
VCE = 10 V, IC = 20 mA, ZO = 50

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