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1
Chapter 1 Why Microelectronics?
2
Cellular Technology
8
Semiconductor Physics
− Eg
ni = 5.2 ×10 T exp 15 3/ 2
electrons / cm 3
2kT
ni (T = 300 0 K ) = 1.08 ×1010 electrons / cm 3
ni (T = 600 0 K ) = 1.54 ×1015 electrons / cm 3
2
np = ni
Majority Carriers : p ≈ NA
2
n
Minority Carriers : n≈ i
NA
n ≈ ND
Majority Carriers : 2
n
p≈ i
Minority Carriers : ND
→ →
vh = µ p E
→ →
ve = − µ n E
I = −v ⋅ W ⋅ h ⋅ n ⋅ q
J n = µn E ⋅ n ⋅ q
J tot = µ n E ⋅ n ⋅ q + µ p E ⋅ p ⋅ q
= q( µ n n + µ p p) E
µ0
µ=
1 + bE
µ0
vsat =
b
µ0
v = E
µ0 E
1+
vsat
A topic treated in more advanced courses is velocity
saturation.
In reality, velocity does not increase linearly with electric
field. It will eventually saturate to a critical value.
dn dp
I = AqDn J p = −qD p
dx dx
dn dn dp
J n = qDn J tot = q ( Dn − Dp )
dx dx dx
dn N dn − qDn N −x
J n = qDn = − qDn ⋅ J n = qD = exp
dx L dx Ld Ld
D kT
=
µ q
I drift , p = I diff , p
I drift , n = I diff , n
dp dV dp
qµ p pE = − qD p − µp p = − Dp
dx dx dx
x 2 p
dp n
Dp p p
µ p ∫ dV =D p ∫ V ( x2 ) − V ( x1 ) = ln
x 1 p p p µ p pn
kT p p kT N A N D
V0 = ln , V0 = ln 2
q pn q ni
C j0
Cj =
V
1+ R
V0
ε si q N A N D 1
C j0 =
2 N A + N D V0
1 1
f res =
2π LC
p p ,e
pn , e =
V0
exp
VT
p p, f
pn , f =
V0 − VF
exp
VT
ND V NA V
∆n p ≈ (exp F − 1) ∆pn ≈ (exp F − 1)
V VT V VT
exp 0 exp 0
VT VT
NA V ND V
I tot ∝ (exp F − 1) + (exp F − 1)
V0 V V0 VT
exp T exp
VT VT
VF Dn Dp
I s = Aqni (
2
I tot = I s (exp − 1) + )
VT N A Ln N D L p
VD
I D = I S (exp − 1)
VT
IX
VX = I X R1 + VD = I X R1 + VT ln
IS
I X = 2.2mA for VX = 3V
I X = 0.2mA for VX = 1V
49
Diode Circuits
V V
R = 0⇒ I = = ∞ R=∞⇒ I = =0
R R
When Vin is less than zero, the diode opens, so Vout = Vin .
When Vin is greater than zero, the diode shorts, so Vout = 0.
CH3 Diode Circuits 59
Diode’s Application: Rectifier
I in
I D1 =
Is2
1+
I s1
I in
I D2 =
I s1
1+
Is2
Vout = 3VD
Ix IX
= 3VT ln
Is
∆V
∆I D = I D1
VT
∆I D dI D
= |VD =VD1
∆VD dVD
Is I D1
= exp
VT VT
I D1
=
VT
VT
rd =
ID
Since there’s a linear relationship between the small signal
current and voltage of a diode, the diode can be viewed as
a linear resistor when only small changes are of interest.
CH3 Diode Circuits 73
Small Sinusoidal Analysis
V0 VT
V (t ) =V0 +V p cos ωt I D (t ) = I 0 + I p cos ωt = I s exp + V p cos ωt
VT I 0
If a sinusoidal voltage with small amplitude is applied, the resulting
current is also a small sinusoid around a DC value.
3rd
vout = vad
R1 + 3rd
= 11.5mV
∆Vout = ∆I D ⋅ (3rd )
= 0.5mA(3 × 4.33Ω)
= 6.5mV
−t
Vout (t ) = (V p − VD ,on ) exp 0 ≤ t ≤ Tin
RL C1
t V p − VD ,on t
Vout (t ) ≈ (V p − VD ,on )(1 − ) ≈ (V p − VD ,on ) −
RL C1 RL C1
V p − VD ,on Tin V p − VD ,on
VR ≈ ⋅ ≈
RL C1 RL C1 f in
2VR V p V p 2VR
I p ≈ C1ωinV p + ≈ ( RL C1ωin + 1)
V p RL RL Vp
The diode has its maximum current at t1, since that’s when
the slope of Vout is the greatest.
This current has to be carefully controlled so it does not
damage the device.
CH3 Diode Circuits 85
Full-Wave Rectifier
Figures (e) and (f) show the topology that inverts the negative
half cycle of the input.
CH3 Diode Circuits 87
Full-Wave Rectifier: Bridge Rectifier
rD
Vout = Vin
rD + R1
The clipping region is not exactly flat since as Vin increases, the currents
through diodes change, and so does the voltage drop.
C1
∆ Vout = ∆ Vin ∆ Vout = ∆ Vin
C1 + C2
The output increases by Vp, Vp/2, Vp/4 , etc in each input cycle,
eventually settling to 2 Vp.
CH3 Diode Circuits 107
Current thru D1 in Voltage Doubler
Cj / 2
∆ Vout = ∆ Vin
C j / 2 + C1
113
Bipolar Transistor
Vout
AV = = − KR L
Vin
AE qD n ni2 VBE
IC = exp −1
N EWB VT
VBE
I C = I S exp
VT
AE qD n ni2
IS =
N EWB
IC = βI B
Base current consists of two components: 1) Reverse
injection of holes into the emitter and 2) recombination of
holes with electrons coming from the emitter.
CH4 Physics of Bipolar Transistors 127
Emitter Current
I E = IC + I B
1
I E = I C 1 +
β
IC
β=
IB
VBE
IC = I S exp
VT
1 VBE
IB = I S exp
β VT
β +1 VBE
IE = I S exp
β VT
β
=α
β +1
d VB E
gm = I S exp
dVB E VT
1 VB E
g m = I S exp
VT VT
IC
gm =
VT
The figure above shows that for a given VBE swing, the
current excursion around IC2 is larger than it would be
around IC1. This is because gm is larger IC2.
CH4 Physics of Bipolar Transistors 137
Small-Signal Model: Derivation
IC 1
gm = =
VT 3.75 Ω
β
rπ = = 375 Ω
gm
Here, small signal parameters are calculated from DC
operating point and are used to calculate the change in
collector current due to a change in VBE.
CH4 Physics of Bipolar Transistors 141
Small Signal Example II
In this example, a resistor is placed between the power supply and collector,
therefore, providing an output voltage.
The claim that collector current does not depend on VCE is not
accurate.
As VCE increases, the depletion region between base and
collector increases. Therefore, the effective base width
decreases, which leads to an increase in the collector
current.
CH4 Physics of Bipolar Transistors 144
Early Effect Illustration
∆VCE VA VA
ro = = ≈
∆I C I expVBE I C
S
VT
CH4 Physics of Bipolar Transistors 148
Summary of Ideas
VEB
I C = I S exp
VT
IS V
IB = exp EB
β VT
β +1 V
IE = I S exp EB
β VT
VEB VEC
Early Effect I C = I S exp 1 +
VT VA
166
Bipolar Amplifiers
Vx
Rx =
ix
The figure above shows the techniques of measuring input and output
impedances.
vx
= rπ
ix
When calculating input/output impedance, small-signal analysis is assumed.
Rout = ro
With Early effect, the impedance seen at the collector is
equal to the intrinsic output impedance of the transistor (if
emitter is grounded).
CH5 Bipolar Amplifiers 172
Impedance at Emitter
vx 1
=
ix 1
gm +
rπ
1
Ro u t ≈
gm
(V A = ∞ )
VC C − VB E VC C − VB E
IB = , IC = β
RB RB
Assuming a constant value for VBE, one can solve for both IB
and IC and determine the terminal voltages of the transistor.
However, bias point is sensitive to β variations.
R2
VX = VCC
R1 + R2
R2 VCC
I C = I S exp( )
R1 + R2 VT
VThev − I B RThev
I C = I S exp
VT
With proper ratio of R1 and R2, IC can be insensitive to β ; however, its exponential
dependence on resistor deviations makes it less useful.
184
Self-Biasing Technique
RB
(1) RC >>
β
(2) ∆VBE << VCC − VBE
Analysis of CE Core
Inclusion of Early Effect
Emitter Degeneration
Inclusion of Early Effect
CE Stage with Biasing
190
Common-Emitter Topology
vout
Av =
vin
vout
− = g m vπ = g m vin
RC
Av = − g m RC
CH5 Bipolar Amplifiers 192
Limitation on CE Voltage Gain
I C RC VR C VC C − VB E
Av = Av = Av <
VT VT VT
vX vX
Rin = = rπ Rout = = RC
iX iX
Av = − g m ( RC || rO )
Rout = RC || rO
Av = −g m rO
VA
Av =
VT
iout
AI =
iin
AI CE
=β
g m RC
Av = −
1 + g m RE
RC
Av = −
1
+ RE
gm
RC
Av = −
1
+ RE || rπ 2
g m1
The input impedance of Q2 can be combined in parallel with
RE to yield an equivalent impedance that degenerates Q1.
RC || rπ 2
Av = −
1
+ RE
g m1
In this example, the input impedance of Q2 can be combined in
parallel with RC to yield an equivalent collector impedance to
ground.
CH5 Bipolar Amplifiers 203
Input Impedance of Degenerated CE Stage
VA = ∞
v X = rπ i X + RE (1 + β )i X
vX
Rin = = rπ + ( β + 1) RE
iX
With emitter degeneration, the input impedance is
increased from rπ to rπ + (β +1)RE; a desirable effect.
CH5 Bipolar Amplifiers 204
Output Impedance of Degenerated CE Stage
VA = ∞
v
vin = 0 = vπ + π + g m vπ RE ⇒ vπ = 0
rπ
vX
Rout = = RC
iX
VA = ∞
vin
iout = gm
1 + (rπ−1 + g m ) RE
iout gm
Gm = ≈
vin 1 + g m RE
If gmRE is much greater than unity, Gm is more linear.
CH5 Bipolar Amplifiers 207
Degenerated CE Stage with Base Resistance
VA = ∞
vout v A vout
= .
vin vin v A
vout − βRC
=
vin rπ + ( β + 1) RE + RB
− RC
Av ≈
1 RB
+ RE +
CH5 Bipolar Amplifiers gm β +1 208
Input/Output Impedances
VA = ∞
Rin1 = rπ + ( β + 1) RE
Rin 2 = RB + rπ 2 + ( β + 1) RE
Rout = RC
− ( RC || R1 )
Av =
1 RB
+ R2 +
gm β +1
Rin = r π + ( β + 1) R2
Rout = RC || R1
CH5 Bipolar Amplifiers 210
Output Impedance of Degenerated Stage with VA< ∞
Rout = [1 + g m ( RE || rπ )] rO + RE || rπ
Rout = rO + ( g m rO + 1)( RE || rπ )
Rout ≈ rO [1 + g m ( RE || rπ )]
Emitter degeneration boosts the output impedance by a
factor of 1+gm(RE||rπ ).
This improves the gain of the amplifier and makes the
circuit a better current source.
CH5 Bipolar Amplifiers 211
Two Special Cases
1) RE >> rπ
Rout ≈ rO (1 + g m rπ ) ≈ β rO
2) RE << rπ
Rout ≈ (1 + g m RE )rO
Analysis of CE Core
Inclusion of Early Effect
Emitter Degeneration
Inclusion of Early Effect
CE Stage with Biasing
215
Bad Input Connection
Av = − g m ( RC || rO )
Rin = rπ || RB
Rout = RC || rO
Av = − g m ( RC || rO )
Rin = rπ || R1 || R2
Rout = RC || rO
VA = ∞
− RC
Av =
1
+ RE
gm
Rin = [ rπ + ( β + 1) RE ] || R1 || R2
Rout = RC
CH5 Bipolar Amplifiers 222
Removal of Degeneration for Signals at AC
Av = −g m RC
Rin = rπ || R1 || R2
Rout = RC
− RC || RL
Av =
1 Rs || R1 || R2
+ RE +
CH5 Bipolar Amplifiers
gm β +1 224
Summary of CE Concepts
Av = g m RC
The voltage gain of CB stage is gmRC, which is identical to that of CE stage in magnitude and
opposite in phase.
IC
Av = .RC
VT
VCC − VBE
=
VT
Av = g m RC = 17.2
R1 = 22.3KΩ
R2 = 67.7 KΩ
CH5 Bipolar Amplifiers 229
Input Impedance of CB
1
Rin =
gm
Rout = rO || RC
RC
Av =
1
+ RS
gm
Rout 1 = [1 + g m ( RE || rπ )] rO + ( RE || rπ )
Rout = RC || Rout 1
vout RC
≈
vin R + RB + 1
β + 1 gm
E
v X rπ + RB 1 RB
= ≈ +
iX β + 1 gm β + 1
1 1 1 RB
RX = + +
g m 2 β + 1 g m1 β + 1
To find the RX, we have to first find Req, treat it as the base
resistance of Q2 and divide it by (β +1).
CH5 Bipolar Amplifiers 242
Bad Bias Technique for CB Stage
1
Rin = || RE
gm
vout 1
= g m RC
CH5 Bipolar Amplifiers
vin 1 + ( 1 + g m RE ) RS 245
Reduction of Input Impedance Due to RE
VA = ∞
vout 1 RE
= ≈
vin 1 + rπ ⋅ 1 R + 1
β + 1 RE
E
gm
VA = ∞
Av = 1
VA = ∞
CH5 Bipolar Amplifiers 253
Emitter Follower with Source Resistance
VA = ∞
vout RE
=
vin R + RS + 1
β + 1 gm
E
VA = ∞
vX
= rπ + (1 + β ) RE
iX
The input impedance of emitter follower is exactly the same
as that of CE stage with emitter degeneration. This is not
surprising because the input impedance of CE with emitter
degeneration does not depend on the collector resistance.
Rs 1
Rout = + || RE
β + 1 gm
Emitter follower lowers the source impedance by a factor of
β +1 improved driving capability.
CH5 Bipolar Amplifiers 257
Emitter Follower with Early Effect
RE || rO
Av =
R 1
RE || rO + S +
β + 1 gm
Rin = rπ + ( β + 1)( RE || rO )
R 1
Rout = s + || RE || rO
β + 1 gm
Since rO is in parallel with RE, its effect can be easily
incorporated into voltage gain and input and output impedance
equations.
CH5 Bipolar Amplifiers 258
Current Gain
vout R2 || RC R1
=− ⋅
R || R 1
vin 1 S
+ + RE R1 + RS
β +1 g m
The keys in solving this problem are recognizing the AC ground between R1 and
R2, and Thevenin transformation of the input network.
vout RC R1
=− ⋅
RS || R1 1
vin + + R2 R1 + RS
β +1 g m
Again, AC ground/short and Thevenin transformation are
needed to transform the complex circuit into a simple stage
with emitter degeneration.
CH5 Bipolar Amplifiers 264
Amplifier Example III
Rin = rπ 1 + R1 + rπ 2
− RC
Av =
1 R1 1
+ +
g m1 β + 1 g m 2
The key for solving this problem is first identifying Req , which is
the impedance seen at the emitter of Q2 in parallel with the
infinite output impedance of an ideal current source. Second,
use the equations for degenerated CE stage with RE replaced by
Req .
CH5 Bipolar Amplifiers 265
Amplifier Example IV
RC || R1
Av =
1
RS +
gm
The key for solving this problem is recognizing that CB at
frequency of interest shorts out R2 and provide a ground for R1.
R1 appears in parallel with RC and the circuit simplifies to a simple
CB stage.
1 RB 1 1
Rin = + || RE +
β + 1 β + 1 gm2 g m1
The key for solving this problem is recognizing the
equivalent base resistance of Q1 is the parallel connection
of RE and the impedance seen at the emitter of Q2.
CH5 Bipolar Amplifiers 267
Amplifier Example VI
vout RE || R2 || rO R1
= ⋅
vin R || R || r + 1 + RS ||R1 R1 + RS
gm β + 1
E 2 O
RS || R1 1
Rout = + || RE || R2 || rO
β + 1 gm
The key in solving this problem is recognizing a DC supply
is actually an AC ground and using Thevenin
transformation to simplify the circuit into an emitter
follower.
CH5 Bipolar Amplifiers 268
Amplifier Example VII
R 1
Rin = rπ 1 + ( β + 1) RE + B1 +
β +1 g m2
R 1
Rout = RC + B 2 +
β + 1 g m3
RB 2 1
RC + +
β + 1 g m3
Av = −
RB1 1 1
+ +
β + 1 g m 2 g m1
270
Chapter Outline
I = Q⋅v
dV
v = +µn
dx
dV ( x)
I D = W Cox [ VG S − V ( x) − VTH ] µ n
dx
I D = µ nCox [ 2(VG S − VTH )VD S − VD2S ]
1 W
2 L
1
Ron =
W
µ nCox ( VGS − VTH )
L
At small VDS, the transistor can be viewed as a resistor, with
the resistance depending on the gate voltage.
It finds application as an electronic switch.
CH 6 Physics of MOS Transistors 289
Application of Electronic Switches
1 W
I D = µ nCox ( VGS − VTH ) (1 + λVDS )
2
2 L
The original observation that the current is constant in the
saturation region is not quite correct. The end point of the
channel actually moves toward the source as VD increases,
increasing ID. Therefore, the current in the saturation region is
a weak function of the drain voltage.
CH 6 Physics of MOS Transistors 295
λ and L
W W 2I D
g m = µ nCox ( VGS − VTH ) g m = 2 µ nCox ID gm =
L L VGS − VTH
Since the channel is very short, it does not take a very large
drain voltage to velocity saturate the charge particles.
In velocity saturation, the drain current becomes a linear
function of gate voltage, and gm becomes a function of W.
CH 6 Physics of MOS Transistors 299
Body Effect
1 W
I D = µ nCox ( VD D − V1 − VTH )
2
2 L
Since V1 is connected at the source, as it increases, the
current drops.
CH 6 Physics of MOS Transistors 302
Small-Signal Model
1
ro ≈
λI D
When the bias point is not perturbed significantly, small-
signal model can be used to facilitate calculations.
To represent channel-length modulation, an output
resistance is inserted into the model.
CH 6 Physics of MOS Transistors 303
PMOS Transistor
1 W
I D , sat = µ p Cox ( VGS − VTH ) (1 − λVDS )
2
2 L
I D ,tri = µ p Cox [ 2( VGS − VTH )VDS − VDS2 ]
1 W
2 L
1 W
I D , sat = µ p Cox ( VGS − VTH ) (1 + λ VDS )
2
2 L
I D ,tri = µ p Cox [ 2( VGS − VTH ) VDS − VDS2 ]
1 W
2 L
309
Chapter Outline
R2VDD
VGS = − ( V1 − VTH ) + V1 + 2V1
2
− VTH
R1 + R2
1
V1 =
W
µ nCox RS
L
I D RD + VGS + RS I D = VDD
λ=0
Av = − g m RD
W
Av = − 2µ n C ox I D RD
L
CH7 CMOS Amplifiers 314
Operation in Saturation
Av = − g m RL
Rin = ∞
Rout = RL
316
CS Stage with λ ≠ 0
Av = − g m ( RL || rO )
Rin = ∞
Rout = RL || rO
However, Early effect and channel length modulation affect
CE and CS stages in a similar manner.
CH7 CMOS Amplifiers 317
CS Gain Variation with Channel Length
W
2µ nCox
L 2µ nCoxW L
Av = ∝
λ ID ID
Av = − g m1 ( rO1 || rO 2 )
Rout = rO1 || rO 2
To alleviate the headroom problem, an active current-
source load is used.
This is advantageous because a current-source has a high
output resistance and can tolerate a small voltage drop
across it.
CH7 CMOS Amplifiers 319
PMOS CS Stage with NMOS as Load
Av = − g m 2 (rO1 || rO 2 )
1 ( W / L) 1
Av = − g m1 ⋅ =−
gm2 (W / L) 2
1
Av = − g m1 || rO 2 || rO1
gm2
Lower gain, but less dependent on process parameters.
1
Av = − g m 2 || ro1 || ro 2
g m1
RD
Av = −
1
+ RS
gm
λ=0
Similar to bipolar counterpart, when a CS stage is
degenerated, its gain, I/O impedances, and linearity change.
CH7 CMOS Amplifiers 323
Example of CS Stage with Degeneration
RD
Av = −
1 1
+
g m1 g m 2
A diode-connected device degenerates a CS stage.
VR = 0
G
rout ≈ g m rO RS + rO
1 1
Rout = rO1 1 + g m1 +
gm2 gm2
R1 || R2 − RD R1 || R2
Av = ⋅ , Av = − gm R D
RG + R1 || R2 1 + R RG + R1 || R2
S
gm
Degeneration is used to stabilize bias point, and a bypass
capacitor can be used to obtain a larger small-signal
voltage gain at the frequency of interest.
CH7 CMOS Amplifiers 329
Common-Gate Stage
Av = g m RD
1
Rin =
gm λ=0 Rout = RD
RD
Av =
1
+ RS
gm
When a source resistance is present, the voltage gain is
equal to that of a CS stage with degeneration, only positive.
CH7 CMOS Amplifiers 333
Generalized CG Behavior
Rout = (1 + g m rO ) RS + rO
When a gate resistance is present it does not affect the gain
and I/O impedances since there is no potential drop across
it ( at low frequencies).
The output impedance of a CG stage with source resistance
is identical to that of CS stage with degeneration.
CH7 CMOS Amplifiers 334
Example of CG Stage
vout g m1 RD 1
= Rout ≈ g m1rO1 || RS + rO1 || RD
vin 1 + ( g m1 + g m 2 ) RS gm2
vout R3 || ( 1 / g m )
= ⋅ g m RD
vin R3 || ( 1 / g m ) + RS
Av < 1
vo u t rO || RL
=
vin 1 + r || R
O L
gm
Similar to the emitter follower, the source follower can be
analyzed as a resistor divider.
CH7 CMOS Amplifiers 338
Source Follower Example
rO1 || rO 2
Av =
1
+ rO1 || rO 2
g m1
In this example, M2 acts as a current source.
1 1
Rout = || rO || RL ≈ || RL
gm gm
The output impedance of a source follower is relatively low,
whereas the input impedance is infinite ( at low
frequencies); thus, a good candidate as a buffer.
CH7 CMOS Amplifiers 340
Source Follower with Biasing
1 W
I D = µ nCox ( VD D − I D RS − VT H )
2
2 L
1
Av = − g m1 || rO1 || rO 2 || rO 3
g m3
1
Rout = || rO1 || rO 2 || rO 3
g m3
M1 acts as the input device and M2, M3 as the load.
CH7 CMOS Amplifiers 343
Example of a CS Stage (II)
rO 2
Av = −
1 1
+ || rO 3
g m1 g m 3
rO 2
Av _ CG =
Av _ C S = − g m 2 [ (1 + g m1rO1 ) RS + rO1 ] || rO1 1
+ RS
gm
With the input connected to different locations, the two circuits, although
identical in other aspects, behave differently.
RD
Av =
1 1
+
g m1 g m 2
By replacing the left side with a Thevenin equivalent, and
recognizing the right side is actually a CG stage, the
voltage gain can be easily obtained.
CH7 CMOS Amplifiers 346
Example of a Composite Stage (II)
1
|| rO 3 || rO 4
vout 2 g m3
=−
vin 1 1
|| rO 2 +
gm2 g m1
348
Chapter Outline
Infinite gain
Infinite speed
Vin 1
Vin 2
To explicitly show the supply voltages, VCC and VEE are shown.
In some cases, VEE is zero.
Vout R1
=1+
Vin R2
Vout R1 R1 1
≈ 1 + 1 −1 +
Vin R2 R2 A0
The error term indicates the larger the closed-loop gain, the
less accurate the circuit becomes.
CH8 Operational Amplifier as A Black Box 357
Extreme Cases of R2 (Infinite A0)
If R2 is zero, the loop is open and Vout /Vin is equal to the intrinsic gain of the op
amp.
If R2 is infinite, the circuit becomes a unity-gain amplifier and Vout /Vin becomes
equal to one.
0 −Vout Vin
=
R1 R2
Vout − R1
=
Vin R2
Inverting Noninverting
Vout R1 1 R1
≈ − 1 − 1 +
Vin R2 A0 R2
The larger the closed loop gain, the more inaccurate the
circuit is.
CH8 Operational Amplifier as A Black Box 361
Complex Impedances Around the Op Amp
Vout Z1
≈−
Vin Z2
∫
Vout 1 1
=− Vout =− Vin dt
Vin R1C1s R1C1
∫
1 V1
Vout = − Vin dt = − t 0 < t < Tb
R1C1 R1C1
Vout −1
=
Vin 1 1
+ 1 + R1C1s
A0 A0
Vout R1
dVin =− = − R1C1s
Vout = − R1C1 Vin 1
dt
C1s
Vout = R1C1V1δ (t )
Vout − R1C1s
=
Vin 1 + 1 + R1C1s
A0 A0
When finite op amp gain is considered, the differentiator
becomes lossy as the zero moves from the origin to –
(A0+1)/R1C1.
It can be approximated as an RC circuit with R reduced by a
factor of (A0+1).
CH8 Operational Amplifier as A Black Box 370
Op Amp with General Impedances
Vout Z1
= 1+
Vin Z2
V1 V2
Vout = −RF +
R1 R2
− RF
Ao Vout = (V1 + V2 )
R
If R1 = R2=R
When Vin is positive, the circuit in b) behaves like that in a), so the
output follows input.
When Vin is negative, the diode opens, and the output drops to
zero. Thus performing rectification.
CH8 Operational Amplifier as A Black Box 373
Inverting Precision Rectifier
When Vin is positive, the diode is on, Vy is pinned around VD,on , and
Vx at virtual ground.
When Vin is negative, the diode is off, Vy goes extremely negative,
and Vx becomes equal to Vin .
CH8 Operational Amplifier as A Black Box 374
Logarithmic Amplifier
Vin
Vout = −VT ln
R1 I S
2Vin
Vout = − −VTH
W
µn Cox R1
L
R1
Vout = 1 + ( Vin + Vos )
R2
Since the offset will be amplified just like the input signal,
output of the first stage may drive the second stage into
saturation.
CH8 Operational Amplifier as A Black Box 379
Offset in Integrator
Vout R2 1
=−
Vin R1 R2C1s + 1
R1
Vout = − R2 I B 2 − = R1 I B 2
R2
It turns out that IB1 has no effect on the output and IB2 affects
the output by producing a voltage drop across R1.
CH8 Operational Amplifier as A Black Box 382
Input Bias Current Cancellation
R1
Vout = Vcorr 1 + + I B 2 R1
R2
I B1 = I B 2
∫
1
Vout =− ( − I B 2 R1 ) dt
R1C1
Vout A0
( s) =
Vin1 − Vin 2 s
1+
ω1
In the linear region, when the input doubles, the output and
the output slope also double. However, when the input is
large, the op amp slews so the output slope is fixed by a
constant current source charging a capacitor.
This further limits the speed of the op amp.
CH8 Operational Amplifier as A Black Box 389
Comparison of Settling with and without Slew Rate
dVout R1
= V0 1 + ω cos ωt
dt R2
As long as the output slope is less than the slew rate, the op
amp can avoid slewing.
However, as operating frequency and/or amplitude is
increased, the slew rate becomes insufficient and the
output becomes distorted.
CH8 Operational Amplifier as A Black Box 391
Maximum Op Amp Swing
Rout
A0 −
vout R1 R1
=−
vin R2 1 + Rout + A + R1
0
R2 R2
In practical op amps, the output resistance is not zero.
It can be seen from the closed loop gain that the nonzero
output resistance increases the gain error.