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Exp 6: Physical Analysis of Nand Gate Objective: EEE610 Custom IC Design Lab (Fall 2012-13)
Exp 6: Physical Analysis of Nand Gate Objective: EEE610 Custom IC Design Lab (Fall 2012-13)
Date:07/09/2012
Register No:12MVD0087
Circuit Diagram
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Sizing Sizing of both NMOS and PMOS in NAND gate is done by keeping CMOS Inverter as the reference. Circuit Diagram after Sizing
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
LVS Result
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Spice Netlist
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Experiment No: 6
Date:07/09/2012
Register No:12MVD0087
Spice Netlist
Analysis and Inference The sizing of PMOS and NMOS of NAND gate taking Reference of Symetric inverter has been performed. The DC and Transient analysis , Design Layout , RCX Extraction and Post-Layout Simulation for NAND gate has been analyzed.