EE682 Group Project Design

Lecture #1 Power Switch Design

Prof. Ali Keyhani Boost DC/DC Converter Design

Power Switch Design

Boost Converter Review

1. Circuit topology

Power Switch Design

Boost Converter Review

2. Continuous conducting mode (CCM)

Current slope: VL/L Where VL is inductor voltage

Power Switch Design

Boost Converter Review

3. Discontinuous conducting mode (DCM)

Inductor current is not continuous

Power Switch Design

Design Tasks
1. Power switch design 2. Inductor design 3. Capacitor design 4. Drive circuit

Power Switch Design

Design Specifications
1. Input voltage: 24 V 2. Output voltage: 48 V 3. Output power: 240 W 4. Inductor current ripple: 15 % 5. Capacitor voltage ripple: 0.1 %

Power Switch Design

Power Switch Design

1. Power BJTs, Power MOSFETs, and IGBTs 1. BJTs greater capacity, low ON state loss 2. MOSFETs fast switching, voltage driven 3. IGBTs combined modules, powerful and expensive

Power Switch Design

Power Switch Design

Illustrate the design procedures with a design example: Design requirement: A 240-watt DC/DC boost converter with Vin=24V and Vout=48V.

Power Switch Design

Power Switch Design

1. Current and voltage rating requirements Design: Peak transistor current equals to Iin=P/Vin=240W/24V=10A Voltage rating requirements VTmax=Vout+VF(diode)=48+0.7V=48.7V

Power Switch Design

Power Switch Design

2. Device selection based on the requirements Design: Candidate I: BJT 2N6547 IC=15A>10A and VCE=400V>48V Candidate II: power MOSFET HUFA75307D3 ID=15A>10A and VDS=55V>48V

Power Switch Design

Power Switch Design

Datesheet 2N6547

Power Switch Design

Power Switch Design

Datesheet HUFA75307D3

Power Switch Design

Power Switch Design

3. Base/Gate drive requirements 2N6547: For IC=15A, must have IB>=3A, not desirable

Power Switch Design

Power Switch Design

3. Base/Gate drive requirements (contd) HUFA75307D3 is voltage driven: Threshold (mininum ON) gate-source voltage VGSth =4V Maximum gate-source voltage VGSmax=20V Can be driven by TTL (+5V) or CMOS logic +15V digital circuits

Power Switch Design

Power Switch Design

4. Transient performances 2N6547 Rise time: tr=1.0s Fall time: tf=1.5s HUFA75307D3 Rise time: tr=40ns Fall time: tf=45ns

Power Switch Design

Power Switch Design

5. Selection Power MOSFET HUFA75307D3 6. Switching loss
PSW _ loss = Wloss 1 V I = (Wloss _ ON + Wloss _ OFF ) = ds d (tON + tOFF ) T T 2T 48 10 ( = 60 + 100) 10 9 = 0.768W 1 2 20 103

Power Switch Design

Power Switch Design

7. ON state loss 1. ON state time
t1 = 1 Vout + VF Vin 1 48 + 0.7 24 = sec = 25.73 s 20 103 f V 48 out

2. ON state loss
PON _ loss = = WON _ loss T = 1 2 I D rDS ( ON )t1 T

) )

1 152 0.075 25.73 10 6 = 8.684W 1 20 103

Power Switch Design

Power Switch Design

8. Overall loss

Ploss = PSW _ loss + PON _ loss = 9.452W < PD = 45 W

(see the datasheet of HUFA75307D3)

Power Switch Design

Power Switch Design

Calculation of junction to sink temperature difference

T JC ( t ) = Ploss Z JC ( 50 %) ( t ) R JC
T js = Rjs Ploss = 3.3o C/W 9.452W = 31.2o C < Tjmax = 175C

Power Switch Design

Power Switch Design

HUFA75307D3 ON-resistance and turn-on and turn-off time