Professional Documents
Culture Documents
Presented By: Love Gupta Dept. of Electronics & Instrumentation
Presented By: Love Gupta Dept. of Electronics & Instrumentation
The wire linking transistors together is called interconnect 1. The interconnect has become a critical determiner of circuit performance in the deep sub-micron regime. 2. As the technology size is decreasing
Delay (seconds)
20
25
30
35
40
45
= resistivity (m)
l R R t w w
R = sheet resistance ( /)
Aluminum and copper are the two conductive materials currently used for on chip interconnections.
The main limitations of the aluminum-based process is its higher resistivity, compared to copper. The manufacturing difficulties related to Cu interconnections make it a more expensive than Al based interconnections, but this extra cost can be compensated by better performance.
Increasing resistivity due to : The presence of highly resistive diffusion barrier layer Surface scattering
What is a Carbon Nanotube? What is a Carbon Nanotube? What is a Carbon Nanotube? What is a Carbon Nanotube?
CNT is a tubular form of carbon with diameter as small as 1nm. Length: few nm to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube.
Types of CNTs :
Single Wall CNT (SWCNT)
Only one shell Diameter ranging from 0.4nm to 4nm
http://www.nature.com
Having several concentric shells and diameter ranging from several nanometers to tens of nanometers.
CNT
Cu
CNTs have long MFPs (of the order of several micrometers) Which provide low resistivity and possible ballistic transport in short length interconnects.
Max current density (A/cm2) Thermal conductivity (W/mK) Mean free path (nm) @ room temp
>1x109
Wei, et al., APL, 2001
~1x107
5800
Hone, et al., Phys. Rev. B, 1999
385
>1000
McEuen, et al., Trans. Nano., 2002
40
CNTs exhibit extraordinary strength and unique electrical properties, and are efficient conductors of heat and have large current carrying capacity.
RCNT=(h/4e2)L/L0
Diffusive transport (L>> L0)
CE
a CNT has four conducting channels so the effective quantum capacitance resulting from four parallel capacitances CQ is given by 4 .
Total Inductance :
1. Magnetic Inductance 2. Kinetic Inductance
LM=
y ln 2 d
h Lk= = 16nH/m 2 2e v f
vf
= 8x105m/s
Bundle of SWCNTs
Resistance of a CNTBundle R bundle=R isolated/n CNT
Capacitance of a CNT-bundle
Inductance of CNT-bundle
L< L0CNT with L bundle=(LM+Lk/4)/nCNT and (b) L>> L0CNT with L bundle=LM/nCNT.
Voltage scaling
Conclusion
At local level Cu Interconnect gives better performances than a bundle of SWCNT. Where as a bundle of SWCNT has better efficiency at intermediate level and Global level. Where as, power decreases with lower value of Vdd and increases with increase in number of repeaters due to higher value of capacitance. For better performance power supply should be balance, with voltage scaled repeaters.
REFERENCES
[1] W. Steinhogl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, Comprehensive study of the resistivity of copper wires with lateral dimensions of 100nm and smaller, Journal of Applied Physics, vol. 97,pp. 5186-5189, 2005. [2] P. L. McEuen, M. S. Fuhrer, and H. K. Park, Single-walled carbon nanotube electronics, IEEE Trans. Nanotechnology, vol. 1, pp. 78-85, 2002. [3] F. Kreupl, et al., Carbon Nanotubes in Interconnect Applications, Microelectronic Engineering, vol.64 pp. 399-408, 2002. [4] J. Li, et al., "Bottom-up Approach for Carbon Nanotube Interconnects," Applied Physics Letters, Vol. 82, pp. 2491-2493, April 2003. [5] A. Thess, et al., Crystalline Ropes of Metallic Carbon Nanotubes, Science, Vol. 273, pp. 483-487, 1996. [6] J. Li, et al., "Carbon Nanotube Interconnects: A Process Solution", IEEE Intl. Interconnect Tech. Conf. pp. 271-272, 2003. [7] M. Nihei, et al., Carbon Nanotube Vias for Future LSI Interconnects,IEEE Intl Interconnect Tech Conf , pp.251-253, 2004. [8] P. J. Burke, Luttinger Liquid Theory as a Model of the Gigahertz Electrical Properties of Carbon Nanotubes, IEEE Trans. Nanotechnology, Vol. 1, pp.129-144, 2002. [9] P. L. McEuen, et al., Single-Walled Carbon Nanotube Electronics, IEEE Trans. Nanotechnology, Vol. 1, pp. 78-85, 2002. [10] N. Srivastava and K. Banerjee, Performance analysis of carbon nanotube interconnects for VLSI applications, IEEE/ACM Intl. Conf. on ICCAD , pp. 383-390, 2005.
MODEL
PDISTRIBUTED MODEL