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ELECTRONIC DEVICES AND CIRCUITS

BRIEF NOTES

SEE WWW.UANDISTAR.BLOGSPOT.COM FOR MORE JNTU MATERIALS UNIT I :: ELECTRON DYNAMICS: CRO

e = 1.602 1019 C , m = 9.11031 kg , F force on electron in uniform electric field E eE F=eE; acceleration a = m If electron with velocity ' v ' moves in field ' E ' making an angle ' ' can be resolved to v sin , v cos .
Effect of Magnetic Field B on Electron. When B & Q are perpendicular path is circular r = When slant with ' ' path is # Helical. EQUATIONS OF CRT ELECTROSTATIC DEFLECTION SENSITIVITY Se = MAGNETIC DEFLECTION SENSITIVITY S m = lL Velocity due to voltage V, v =

mv 2 m ; Period ' t ' = Be Be

lL 2dVa

e 2mVa

2eV m

When E and B are perpendicular and initial velocity of electron is zero, the path is Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where

Q=

u=

E Be , = . m B
UNIT II :: SEMICONDUCTOR JUNCTION

Si , Ge have 4 electrons in covalent bands. Valency of 4. Doping with trivalent Pentavalent elements makes ' n ' semiconductor. elements makes ' p ' ,
Conductivity

= e ( n n + p p )

where

n, p are concentrations of Dopants.

n & p

are

mobilitys of electron and hole respectively.

Diode equation

Vd I d = I s e nVT 1

-1-

VT =

kT ; K= Boltzman Constant q

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rd =

Vd VT kT N A N P = ; Vo = ln I d I q ni 2

T = 00 C + 273; q = 1.602 1019 C

Diode drop changes @ 2.2mv / C ,
0

Leakage current I s doubles on 10 C

Diffusion capacitance is cd =

dq of forward biased diode it is I dv

n

Transition capacitance CT is capacitance of reverse biased diode V RECTIFIERS

n = 1 to 1 2 3

COMPARISION HW FW CT FW BR

VDC Vrms

Vm Vm

2Vm

2Vm

Vm

Vm

Ripple factor

1.21

0.482

0.482

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Rectification efficiency

40.6%

81%
2 Vm

81%

PIV
Peak Inverse Voltage

Vm

Vm

UNIT III :: FILTERS

Harmonic Components in FW Output,

v0 =

2Vm

4 1 1 cos 2wt + cos 4 wt + ..... 15 3

Capacitance Input Filter,

1 4 3 f CRL

Inductor Input Filter, Critical inductance half cycle. LC FILTER,

RL 3 2 L

LC is that value at which diode conducts continuously, in + ve or ve

2 1.2 , for 50 Hz , L in H , C in F . or LC 12 LC
2

LC LADDER,

Xc 2 X c1 X c2 . . ..... n X Ln 3 X L1 X L2

FILTER,

2 X C1 X C2 . . 3 RL X L

RC FILTER,

= 2.

X C1 X C2 . RL R

ZENER DIODE

FWD Bias Normal si Diode 0.7 V Drop Reverse Bias

Zener drop = Vz forV > Vz

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ZENER REGULATOR

Is = rz =

Vi Vz ;Vi >> Vz Rs Vz I z

TUNNEL DIODE

Conducts in

f b

, r , Quantum mechanical tunneling in region a-0-b-c. b

-ve resistance b-c, normal diode c-d.

I p = peak current, I v = valley current; v p =peak voltage 65 mV, vv =valley voltage

0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.

VARACTOR DIODE

Used in reverse bias & as tuning variable capacitance.

CT =

(VT + VR )

; n=0.3 for diffusion, n=0.5 for alloy junction, CT =

Co 1 + VR VT
n

CB 1 is figure of merit, Self resonance f o = C25 2 LS CT

PHOTO DIODES

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Diode used in reverse bias for light detection. Different materials have individual peak response to a range of wave lengths.

UNIT - IV BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC Components of current are I nE , I pE at

EB junction where =

I nE I = nE I nE + I pE I E

= Emitter efficiency, * =
BE = f / b; BC = r / b

I nc transportation factor. I nE

Ie = Ib + Ic

Ic I ; = c Ie Ib

Doping Emitter Highest Base Lowest

Ie > I c > Ib
Leakage currents : I CBO , I CEO , I EBO

I CEO = (1 + ) I CBO

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3 Configurations are used on BJT, CE, CB & CC

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Common Emitter,

VI characteristics

IC IB

VCE

Ri = hie =

V VBE = re ; rce = r0 = ce I B I c

Input Characteristics

Circuit

Output Characteristics

AC Equivalent Circuit

COMMON BASE VI CHARACTERISTICS

IC ; = IE 1+
-6AC Equivalent Circuit

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I VEB = re ; h fb = C Ie I E Vcb I c

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hib =

VCB

; rcb =

AMPLIFIER COMPARISON COMPARISON CB BE SATURATION ACTIVE CUT OFF f/b f/b r/b BC LOW CE MED CF HIGH

Ri
f/b

AI
r/b

AI
High High

High High

+1
<1 low

AV
r/b

Ro

UNIT - V h- parameters originate from equations of amplifier

vi = hi ii + hr v2 , i2 = h f ii + h0v2 vi & ii are input voltage and current v2 & i2 are output voltage and current

hi input impedance hie , hib , hic re , re , ( + 1) re

h f current gain h fe , h fb , h fc

, , (1 + )

hr reverse voltage transfer hre , hrb , hrc ho output admittance hoe , hob , hoc
FIELD EFFECT TRANSISTOR, FET is Unipolar Device

Construction

n-Channel

p-Channel

S=Source, G=Gate, D=Drain GS Junction in Reverse Bias Always

Vgs Controls Gate Width

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VI CHARACTERSTICS

Transfer Characteristics

Circuit

Forward Characteristics

Shockley Equation

Vgs I d = I dss 1 V p

V g m = g m 0 1 gs V p

MOSFET: Metal Oxide Semiconductor FET, IGFET

Depletion Type Mosfet

Symbols

Enhancement Mosfet

Depletion Type MOSFET can work width Vgs > 0 and Vgs < 0 MOSFET High Ri = 10
10

JPET

108
1m
Depletion Mode Rugged

R0 = 50 k
Depletion Enhancement Mode Transfer Characteristics Forward Characteristics Delicate

Enhancement MOSFET operates with, Vgs > Vt , Vt = Threshold Voltage

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Forward Characteristics

Transfer Characteristics

VDS ( sat ) = VGS VT , I ds (ON ) = K (VGS VT )

JFET I D Table Vgs

0 0.3 VP 0.5 VP

COMPARISIONS BJT Current controlled High gain Bipolar Temp sensitive High GBWP FET Voltage controlled Med gain Unipolar Little effect of T Low GBWP

ID I DSS I DSS I DSS

0

2 4

VP

UNIT VI :: BIASING in BJT & JFET Fixing Operating Point Q is biasing

Fixed Bias

Emitter Stabilized Fixed Bias

Feedback Bias

VCC = I B RB + VBE

VCC = ( + 1) RC I B + I B RB + VBE

VCC = I B RB + VBE + ( + 1) Re

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VB =

VCC R2 , R1 + R2 VE RE
Vcc = ( + 1)( Rc + Re ) Ib + Ib.Rb + Vbe

VE = VB VBE ; I C

VOLTAGE DIVIDER BIAS

EMITTER STABILIZED FIXED BIAS

STABILITY EQUATIONS

I c = S1I c 0 + S2 VBE + S3 S1 =

( + 1) I C I C I ; S2 = ; S3 = C , STABILITY FACTOR S = dI I CO VBE 1 B dI C

Derive

S must be as small as possible, Most ideal value =1 How to do determine stability factor for bias arrangement? substitute in S

dI B and dI C

Amplifier formulae:

AV = AI

Zl , Z i measured with output shorted Zi

Z0 measured with input shorted CE amplifier A I h fe or ; VT R ; Av = L ; re I R CB amplifier A1 = ; Av = L ; Z i = re re Z i = re; re =

CC amplifier A I = ( + 1) ; AV = 1
H Parameter Model CE

hie

Ri

; Ri = ( h fe + 1) RE + hie

AI =

h fe
1 + hoe zl

; AV = h fe

ZL hie RL hib

CB amplifier Ri = hib ; AI = h fb ; AV = h fb .
FET CS amplifier AV = g m ( Rd || rd ) ; Z 0 = Rd Common Gate Amplifier

AV = g m Rd , Z i =

Rs 1 + g m Rs

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Common Drain

AV =

g m Rs 1 ; Zo = 1 + g m Rs gm f1 =
1 , 2 RC
f = tan 1 1 f ; A = 1+ Octave= f 1 f j 1

RC Coupled Amplifiers If cut off frequency

Slope = 6dB / octave, 20dB / decade ,

or 2 f 2 f is beta cut off frequency where h fe falls by 0.707 f is cut off frequency where = 0.707 ft is h fe = 1 gain bandwidth product.
UNIT VII :: FEED BACK AMPLIFIERS

Amplifier gain stands for any of Voltage amplifier, Current amplifier, Trans resistance Trans admittance amplifier

Af =

X X A ; A= 0 ; = f Xi X0 1 + A

Xi = Xs X f

Ve feed back amplifier depends on |1 + A | > 1 ve f b , < 1 + ve f b is called de-sensitivity factor.

Feed back reduces noise distortion, gain variation due to parameters, increases BW.

(1 + A )

Feed back amplifiers Voltage series, voltage shunt; Current series, current shunt

for voltage, current series zi f = zi (1 + A ) A , for all 1 + A zi , for voltage or current shunt zi f = 1 + A zo f = zo (1 + A ) , for current series, shunt Af = zo f = z0 , for voltage series and shunt. 1 + A

UNIT VIII :: OSCILLATORS Barkausen Criterion for oscillation loop gain =1, - 11 -

=00, 3600.

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HARTLEY OSCILLATOR

f =

1 , 2 LT C

LT = L1 + L2 M , ; =

L2 , L1

COLLPITS OSILLATOR,

L1 , L2 replaced by C1 , C2 ,
C replaced by L; f =

1 2 LCT

CRYSTAL OSCILLATORS Tuned ckt replaced with Crystal

1 , LC 1 p = LCT

s =

Phase shift oscillator

FET MODEL f = 1 , A = 29 , 2 6 RC

Minimum RC sections 3

f =

BJT MODEL 1
4R 2 RC 6 + C R

, A = 29 ,

Minimum RC sections 3

Wein Bridge Oscillator

f =

1 , 2 R1 R2C1C2 1 1 ; A= =3 2 RC

if R1=R2=R, C1=C2=C , f =

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