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Application of Nanotechnology in High Frequency and Microwave Devices Carbon Nanotube-Based Planar Transmission Lines Carbon nanotube based

photocathode for microwave devices New microwave concept based on CNT

CNT acts as a channel in electronic devices such as diodes and transistors. The electronic properties of semiconducting CNTs are controlled by chemical doping as in bulk semiconductor. At ambient condition CNT is not intrinsic (n=p), it is p-type due to inherent curvature of CNT.

N-type doping of semiconducting CNTs is important at nanoscale. Type of doping is determined by the conductance of CNT. In case of CNTFET as gate voltage increases if conductance decreases it is p-type and if increases it is n-type.

Fig.Split gate CNTFET

Both metallic and semiconducting CNTs can be used in CNTFET as channel. In case of semiconducting , band gap narrows due to the transverse electric field.

Metallic CNT is not sensitive to applied field but it experience reversible metallic semiconducting transition beyond a certain field threshold. This metal-semiconductor transition of the CNT is useful to design microwave switch, nanoscale analog-digital converter etc.

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