SEMINAR

PRESENTATION
TOPIC: CARBON NANO TUBE FIELD EFFECT
TRANSISTOR

P R E S E N T E D BY : M U K U L TA N WA R ( 4 1 3 2 0 9 0 2 8 1 6 )

S U P E R V I S E D BY : P R O F. V I B H A K A R S H R I M A L I
Overview of electronic
manufacturing
Since 1960 electronics industry has been driven by:
• Economic
• Speed
• Ease of use
• Packing more functions into IC
Why something new?

Beat the
Moore's
law
SETBACKS OF MOSFET
• Mosfet is a semiconductor device, most
commonly used in the field of vlsi design,
power electronics etc
• The scaling of Mosfet has been driving
force towards the technological
advancement, but continuous scaling
include
 High leakage current
 High field effects
 Reliability issues
INTRODUCTION TO
CNTFET
• Cnts stands for carbon nano tube. It has hexagonal network of
atoms.

• A carbon nanotube field-effect transistor

(CNTFET) refers to a field-effect transistor that utilizes a
single carbon nanotube or an array of carbon
nanotubes as the channel material instead of
bulk silicon in the traditional MOSFET structure
 CNTFET
• Carbon nano tubes(cnts) are
hexagonal networks of carbon
atoms ,can be taken as a layer of
graphite rolled up into a cylinder.
• Their structure depends upon the
position of carbon atoms forming
the tube .
 CNTFET WORKING
• It is a three terminal device similar to the mosfet.
• The semiconducting channel between the two contacts called
drain and source consists of the nanotube.
• CNTFETs conduct electrons when a positive bias is applied to
the gate and holes when a negative bias is applied, and drain
current increases with increasing a magnitude of an applied
gate voltage
 COMPARISON TO MOSFET
• CNTFETs show different characteristics compared
to MOSFETs in their performances.
• The electrons in a carbon nano tube are confined to the
atomic plane. According to its structure ,electrons in the tube
are constrained.
• Only forward and backward scattering of the electrons and
holes are possible in the tube.
• The CNTFET produces ~1500 A/m of the current at a gate
voltage of 0.6 V while MOSFET produces ~500 A/m at the
same gate voltage.
• CNTFETs, in addition, have about four times higher
transconductance.
• The first nanometre CNT transistor was made which
outperformed the best competing silicon devices .
ADVANTAGES OF CNTFET
• High carrier mobility.
• Excellent electrostatics.
• High transconductance.
• High stiffness.
• High strength.
• High current density.
• High stability.
 DISADVANTAGES
• Lifetime (degradation)
Carbon nanotubes degrade in a few days when exposed to
oxygen.
• Reliability
Carbon nanotubes have shown reliability issues when operated
under high electric field or temperature gradients.
• Difficulties in mass production,
production cost
Although CNTs have unique properties such as stiffness,
strength, and tenacity compared to other materials especially to
silicon, there is currently no technology for their mass
production and high production cost.
 FUTURE WORK
• The most desirable future work involved in CNTFETs will be
the transistor with higher reliability, cheap production cost, or
the one with more enhanced performances.
• The present day large scale manufacturing is at 32nm with
intel announcing 22nm to be a reality very soon.
• More experiments needed to be done to guarantee the yield
of Cnts growth .
THANK YOU