Code: DE06

Subject: BASIC ELECTRONICS

Q.10 Ans:

Draw the energy band diagrams of a tunnel diode for different biasing conditions and Describe how tunneling takes place. Marks (6) Band Diagrams of a Tunnel diode: The energy band diagram for a heavily doped unbiased P-N junction is shown in fig. 10(a) Note that the depletion region is very narrow and the filled levels on the N-side are exactly opposite those on the P-side. In this condition, no tunneling occurs, as there are no empty lower energy levels to which electrons from either side might cross the depletion region. It is also to be noted that the conduction and the valence bands on p- side are (negatively) higher than those on the nside, this is due to the formation of the depletion region and barrier potential as a result of electrons crossed from the n-region to the p-region. The n-region has lost negative charge and p-region has gained them.

CONDUCTION BAND

E
VALENCE BAND

FORBIDDEN GAP

EMPTY ENERGY LEVELS

CONDUCTION BAND FORBIDDEN GAP

EMPTY ENERGY LEVELS FORBIDDEN GAP FILLED ENERGY LEVELS

CONDUCTION BAND

G VALENCE BAND

(a) Norm ally Doped P and N-Type Materials

FILLED ENERGY LEVELS

(b) Very Heavily Doped P-Type Material

(c) Very Heavily Doped N-Type Material

Fig. 10

When the junction is reversed biased, the p-region moves up with respect to the n-region as a result, filled energy levels on the p- side become opposite empty energy levels on the n-side. At this stage electrons tunnel through the narrow space charges region from the higher energy levels on the p- side to the lower energy levels on the n- side. Despite the fact that the junction is reverse biased significant current flows. With the increase in reverse bias, more and more electrons tunnel from the p-side to n-side and a larger current flow. Thus the reverse characteristic of a tunnel diode is liner, just like that of a resistor. When the tunnel diode is forward biased, its initial behaviour is similar to that when it is reverse biased. Now, some of the filled energy levels on the n-side shift to a high energy level than empty level on the p-side electron tunneling now occurs, from the n-side to the p-side. With the increase in forward bias, more and more electrons tunnel from the N-side to the P-side.

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