HBK TP HCMKHOA IN-IN T B MN IN T GV: H TRUNG M HNG DN N TP MN DNG C LK IN T HC K 2 NM HC 2008-2009 Ch : kim tra trc nghim gm c 40 50 cu S : 4 n 8 thi khng cho

ng cho s dng ti liu Trng tm n thi ca cc chng nh sau: Chng 5. VT L BN DN 1. Phn loi vt liu theo in dn sut (hay in tr sut) v khe nng lng. 2. S hnh thnh di nng lng. Khi nim di dn, di ha tr v di cm. Khe nng lng EG. 3. Th no gi l bn dn trc tip, bn dn gin tip. Cho th d loi bn dn no l trc tip, gin tip? 4. Bn dn ni ti v bn dn c pha tp cht. 5. c tnh ca phn b Fermi-Dirac. Khi nhit tng th c tnh ny thay i nh th no? 6. Mc (nng lng) Fermi EF trong cht rn: EF nm u trong cht dn n, bn dn v cch in? 7. Phn b Botlzmann: nng in t v l cn bng nhit

8. Nng ht dn ni ti ni

Khi nhit thay i th ni b nh hng nh th no? 9. Th no cht donor, acceptor? Trong bn phn loi tun hon, nu ta dng bn dn thuc nhm IV th cc cht donor v acceptor thuc cc nhm no? Cc mc nng lng donor ED v acceptor EA nm u trong gin nng lng ca cht bn dn? 10. S hnh thnh bn dn loi N, loi P. Ht dn a s ht dn thiu s. nh lut tc ng khi lng ca cht bn dn (ni ti v c pha tp cht) cn bng nhit: n.p = ni2 11. Nng ht dn trong bn dn loi N cn bng nhit (nu ND >> ni) nn ND v pn = ? 12. Nng ht dn trong bn dn loi P cn bng nhit (nu NA >> ni) pp NA v np = ? 13. Bn dn c b chnh (cn c gi l bn dn b) cn bng nhit (xt nng tp cht >>ni): Vi bn dn loi N (ND > NA), ta c nng ht dn a s nn v nng ht dn thiu s pn:

Vi bn dn loi P (NA > ND), ta c nng ht dn a s pp v nng ht dn thiu s np:

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Chng 7. DIODE TIP XC PN ( DIODE CHUYN TIP PN) 7.1 TIP XC PN (CHUYN TIP PN) (nhc li cc l thuyt cp trong chng 6) nh ngha ca tip xc PN loi bc (step), loi bin i u (graded) S to thnh tip xc PN:

Hnh 7.1 S to thnh tip xc PN: (a) Cc min bn dn P v N trc khi to thnh tip xc; (b) Gin nng lng ca tip xc PN (Evac l mc nng lng chn khng, WP l b rng min ngho bn P v WN l b rng min ngho bn N). Tip xc PN cha c phn cc o s hnh thnh min ngho-chuyn ng ca ht dn? o min ngho, min trung ha. o th ni khuch tn B (hay Vbi)

pp 0 kT NDNA nn 0 = VT ln = VT ln ln 2 q ni np 0 pn 0 o min in tch khng gian NAWP = NDWN

B =

W = WP + WN =

2 S B 1 1 + q NA ND

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Hnh 7.2 Tip xc PN cha c phn cc

Hnh 7.3 Cc phn cc c th c tip xc PN

Tip xc PN c phn cc thun (forward bias) o Phn cc thun? (th ti P > th ti N). o Khi phn cc thun tng th : min ngho gim v in tr min ngho gim. o Phng trnh dng in qua tip xc PN c phn cc thun: IF = I 0 eVA /VT 1

vi I0 l dng in bo ha ngc v khi nhit tng th I0 tng.

Tip xc PN phn cc ngc (reverse bias) o Phn cc ngc? (th ti P < th ti N). o Dng in ngc: IR I0 (khi nhit tng th I0 tng) Dng in sinh ti hp Dng in ti hp thng th phn cc thun thp v dng in khuch tn thng th phn cc thun cao hn. IF = I 0 eVA /VT 1

vi l h s l tng (h s pht x) c tr t 1 n 2 ty theo vt liu ch to, th d vi Ge l 1, vi Si l 1.1 hoc t 1.2 n 2

HDOT-DCLKTTrang 3/15

Hnh 7.4 Dng diode ( ln I = f(V) ) phn cc thun (Vi e=in tch in t; kB=hng s Boltzmann; rS= in tr khi)). o xem hnh 7.4 cc dc khc nhau do ci g nh hng? o tc ng ca n c tuyn I-V nh th no?

in tr vt liu khi RS

IF = I 0 e(VA IFRS )/VT 1

tc ng ca RS n c tuyn I-V nh th no?

in dung tip xc PN o vi phn cc ngc (VA= VR < 0): hnh thnh in dung min ngho. in dung min ngho trn mt n v din tch mt ct ngang Cdep (F/cm2):
Cdep =

vi
2 S ( B + VR ) 1 1 + q N A ND khi p ngc VR tng th Cdep gim v ngc li. Ngi ta ng dng hiu ng ny ch to diode bin dung (varicap hay varactor). o vi phn cc thun: hnh thnh in dung khuch tn. Cdiff : in dung khuch tn trn mt n v din tch mt ct ngang. nh thng tip xc PN (xy ra khi p phn cc ngc ln) c 3 loi: o nh thng do nhit: vi nhit thng th khng nh hng. o nh thng thc l (nhn thc l): do ion ha va chm khi ht dn chuyn ng trong in trng. nh thng thc l c h s nhit dng. o nh thng hiu ng Zener (hay ng hm): do hiu ng ng hm v nh thng ny c h s nhit m. Nhn bit nh thng thc l v Zener qua in p nh thng VBR: thng th VBR < 4 V l nh thng Zener; VBR > 6V l nh thng thc l ; 4V VBR 6V c thit k s dng c hai loi nh thng thc l v Zener. W=

HDOT-DCLKTTrang 4/15

7.2 DIODE TIP XC PN Xem hnh 7-1, 7-3 v 7-5.Cc cng thc (7-4), (7-5) nh hng ca v RS ln c tuyn diode nh th no? khi c > 1, RS > 0 th ng cong mi so vi c (RS=0 v =1) nh th no? nh hng ca nhit ln c tuyn ca diode: o phn phn cc thun: nhit tng th ng cong dch v tri so vi c. o phn phn cc ngc: nhit tng th ty theo loi nh thng thc l v/hay Zener m dch v tri hay phi hay t thay i so vi ng cong c. in dung tip xc PN o vi phn cc ngc: c in dung tip xc CJ [F] (J=junction=tip xc) CJ = A.Cdep = SA W vi A: din tch mt ct ngang; S hng s in mi bn dn; W: b rng min ngho. o vi phn cc thun: c in dung khuch tn CD [F] (D=diffusion=khuch tn) ID T CD VT vi T l thi i qua diode (cn gi l thi gian chuyn tip [T=transit])

Hnh 7.5 in dung ca diode tip xc PN vi phn cc ngc VA = VR ( ch : V0=Vbi) in tr ng rD v in tr tnh RD ca diode o in tr ng rD (cn gi l in tr AC) dVD VT VT kT rD = = = = dID ID IQ qIQ T=300oK th rD 0.025V/ID vi VD, ID l p v dng qua diode, IQ l ID im lm vic Q. o in tr tnh RD (cn gi l in tr DC): RD=VD/ID=VQ/IQ

Cc m hnh diode: Xem m hnh diode l tng v m hnh st p hng (ch VON V) M hnh DC M Phng trnh S tng ng hnh (FB=phn cc thun (A=Anode; K=Cathode) RB=phn cc ngc) L tng

c tuyn

HDOT-DCLKTTrang 5/15

St p hng

St p hng vi RF

M hnh AC

Hnh 5.6 Diode vi tn hiu nh

Phn cc vi Mch tng ng

M hnh diode tn hiu nh vi tn s thp: VDQ > VON VDQ < VON

vi rd l in tr AC ca diode rr in tr ngc > 10 MOhm Ch vi tn s cao th c thm in dung song song.

7.3 Cc loi diode khc o Diode chnh lu: diode tip xc PN thng thng - chnh lu: cho dng in i qua 1 chiu (t anode sang cathode) - thng th c in p nh thng ln. o Diode n p (cn gi l diode Zener) - S dng hiu ng nh thng Zener v/hoc hiu ng nh thng thc l. - Xem li nh hng ca nhit ? Vi in p nh thng VBR= VZ (vi VZ>0) th TCVZ < 0 vi nh thng Zener v TCVZ >0 vi nh thng thc l. o Diode bin dung (varicap hay varactor) - ng dng in dung tip xc CJ=f(VR), khi VR tng th CJ gim. Ch l - s dng varicap vi phn cc ngc. HDOT-DCLKTTrang 6/15

Hnh 5.7 M hnh diode Zener vi phn cc ngc VR > VZ0 o Diode Schottky - to t tip xc M-S (M=Metal=kim loi v S=Semiconductor=bn dn), th d M l platium v S l bn dn loi N hnh thnh diode Schottky vi Anode bn M v cathode bn S. - c ro th nh ( ~ 0.3V) - hot ng tt/dn tc chuyn mch cao. Chng 8. BJT (TRANSISTOR TIP XC LNG CC) Ti sao c tn gi lng cc ? tip xc (hay chuyn tip hay mi ni)? Cu to BJT loi NPN v loi PNP.K hiu jE, jC. Nng tp cht ca cc min?

(a) Transistor NPN

(b) Transistor PNP Hnh 8.1. Transistor BJT k hiu BJT th mi tn cc E c ngha g? BJT ch tch cc:

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H s vn chuyn min nn B, hiu sut cc pht E ? BJT tt c B, E tin gn ti 1. li dng in cc nn chung = B.E = IC/IE li dng in cc pht chung = / (1 ) = IC/IB o cao cn: tc ti hp thp min nn v thi gian chuyn tip (i qua) ngn min nn o ph thuc vo IC v nhit . Cc ch lm vic ca BJT v c im ca chng? Cc cu hnh mc BJT:

Hnh 8.2 Transistor PNP: (a) Cc cch mc BJT; (b) c tuyn ra cu hnh CB v CE Hy nu c im ca cc cch mc vi ng dng kha in t v mch khuch i?

iu ch min nn: Xt BJT NPN phn cc ch tch cc [thun] (khuch i), nu VCE tng b rng hiu dng ca min nn gim dng IC tng. Ngha l b rng min nn b thay i (iu ch) khi in p VCE thay i. in p Early VA: gi tr in p ti im nm trn trc honh m mi ng cong IC theo VCE ( phn khuch i) u i qua im ny. dc ti im lm vic (vng khuch i) dIC IC IC (nu VA >> VCE) = dVCE VCE + VA VA

in p nh thng BVCBO , BVCEO o CB: BVCBO khng b nh hng bi IE. o CE: BVCEO b nh hng bi IB (IB tng th BVCEO gim) HDOT-DCLKTTrang 8/15

Hnh 8.3 Mt th d v nh thng BJT Vi 3 cu hnh mc BJT (CB, CE, v CC) th cu hnh no c chn cho BJT lm cng tc (kho)? ti sao? Transistor Schottky: cu to, ng dng 1 BJT tn s cao: Tn s ct fT = 2 ec Cc c tuyn BJT: vo, ra v truyn t M hnh tn hiu nh ca BJT (tn s trung bnh)

(a) M hnh pi (mc CE)

(b) M hnh T M hnh tn s cao ca BJT ch tch cc:

Tn s ct fT (khi =1)

HDOT-DCLKTTrang 9/15

M hnh tham s h. Cc tham s h cho BJT cu hnh CE: vBE vBE VT VT hie r rbe = = re = iB VCE iB vCE =0 IE ICQ

hfe ICQ VT

iC iC = = gmhie iB VCE iB vCE =0

gm =

1 vCE vCE VA +VCEQ VA = = ; (nu VA >> VCE) hoe iC IB iC iB =0 ICQ ICQ Ch : dc = hFE = IC/IB ; ac = hfe = ic/ib ( tn s thp ac = dc ) Dng in r (r) trong BJT (nhit tng dn n dng r tng) o cu hnh CB:IC = IE + ICBO o cu hnh CE: IC = IB + ICEO vi ICEO = ICBO/(1-) Gng dng in (Current mirror) Mch iu kin l ngun dng Phng trnh 1. Q1 v Q2 c c tnh ging Dng in ti: nhau 2. Q1 v Q2 lun ch tch cc thun (dn n c gii hn vi in tr ti RL) rC

vi dng chun IR:

Chng 9. FET FET l transistor hiu ng trng, c cc cng G cch ly vi knh dn qua tip xc PN (JFET) hoc qua cht cch in (MOSFET). FET thuc dng c n cc. 9.1 JFET (tp trung JFET knh N) Cu to ca JFET knh N, knh P. Hnh sau cho thy cu to ca JFET knh N

HDOT-DCLKTTrang 10/15

K hiu

JFET knh N

JFET knh P

c tuyn ra v truyn t ca JFET. Cc min hot ng v cch nhn bit cc min ny. Khi min Ohm ta c th hon i D v S.

Hnh 7.1 c tuyn ra ca JFET knh N (vi VGS(off) = Vp < 0; Vp l in p nght) Cng thc dng ID ch bo ha M hnh tn hiu nh ca JFET. 9.2 MOSFET (tp trung MOSFET loi giu knh N [ MOSFET knh dn cha lp sn loi N]) T MOS Cc ch : tch ly, ngho v o ngc K hiu ca MOSFET

(a) loi giu knh N (NMOS loi giu)

(b) loi giu knh P (PMOS loi giu)

HDOT-DCLKTTrang 11/15



Nguyn tc hot ng ca MOSFET c tuyn ra v truyn t ca MOSFET. Cc min hot ng v cch nhn bit cc min ny.

M hnh tn hiu nh ca JFET/MOSFET Tn s thp

Tn s cao

ro = intr ra CS = (VA+VDSQ)/IDQ ro VA /IDQ

Tn s ct fT = gm/(2(Cgs+Cgd))

M hnh -hn hp ca MOSFET v JFET ( min bo ha)

MOSFET
G
+

JFET
D
G
+

v gs

gmvgs
S

ro

v gs
S

gmvgs

ro

I D = K (VGS Vt ) 2 V D = V DD R D I D g m = 2 K (VGS Vt ) g m = 4 KI D ro = VA ID

I D = K (VGS Vt ) 2 VD = V DD R D I D gm = ro = 2 I DSS VP VA ID ID I DSS

vi VA = tng t in p Early BJT Vt=VTH= in p ngng

HDOT-DCLKTTrang 12/15



Vp = in p nght/nghn IDSS= dng bo ha (khi VGS=0, IDSS=KVt2) K = tham s dn in (A/V2) o Vi MOSFET: K= nCoxW/(2L) (W Z = b rng knh dn; L=chiu di knh dn)

Phn bi tp. Chng 7. Diode 7.1 Xc nh xem diode no c phn cc thun hay phn cc ngc trong cc hnh E7.1 v E7.2

Hnh E7.1 Hnh E7.2 7.2 Cho mch hnh E7.3, gi s VON=0.7V vi diode Si v VON=0.3V vi diode Ge. p dng m hnh diode st p hng, hy tm dng in I khi: a) C hai diode D1 v D2 l diode Si. b) D1 loi Si v D2 l loi Ge.

Hnh E7.3 Hnh E7.4 Hnh E7.5 7.3 Vi mch hnh E7.4, hy tnh I, VR v VD vi m hnh diode: a) l tng b) st p hng vi VON=0.7V c) y vi rF=50 v VON=0.7V 7.4 Cho mch hnh E7.5, hy tm dng in qua diode D1 v dng in qua D2, gi s dng m hnh diode st p hng vi VON=0.7V. 7.5 Hy tm IX v VX (in th so vi in th t) 2 trng hp ca mch hnh E7.6 vi m hnh st p hng c VON=V = 0.6V.

a)
Hnh E7.6

b)

Chng 8. BJT 8.1 Vi cc trng hp sau BJT hot ng min no? a) NPN: VBE = 2V, VCE = 12V d) PNP: VEB = 0.7V, VCE = 15V b) NPN: VBE = 0.7V, VCE = 15V e) PNP: VBE = 3V, VEC = 10V c) NPN: VBE = 0.7V, VCE = 0V f) PNP: VBE = 0.7V, VCE=0V HDOT-DCLKTTrang 13/15

8.2 Hy xc nh xem cc BJT trong hnh E8.1 c phn cc min hot ng no?

Hnh E8.1 Hnh E8.2 8.3 Cho mch hnh E8.2 phi chn R1 v VCC bng bao nhiu c VCE=5V v IC=2mA, bit VBE=0.7V? 8.4 Hy tm im lm vic v m hnh tn hiu nh ca cc BJT trong hnh E8.3? Bit IS=8x1016A (IC = IS exp(VBE/VT)), =100 v VA=.

Hinh E8.3 8.5 Vi mch hnh E8.4, hy tm di gi tr ca RB bo m BJT vn ch bo ha khi vin=2V v =50. (gi s VBEsat=0.8V v VCEsat=0.2V)

Hnh E8.4 Hnh E8.5 8.6 Vi hnh E8.5, hy tm tr ti thiu ca 1 v 2 cho Q1 v Q2 vn ch bo ha khi Vin=5V. Bit RB=5K, RC1=RC2=2K. (gi s VON(ca diode)=0.7V, VBEsat=0.8V v VCEsat=0.2V)

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8.7 Tnh IR hoc IC2 hoc gii hn in tr ti RL trong mch gng dng in. Chng 9. FET Tp trung kho st JEFT knh N v MOSFET loi giu knh N (N-EMOS) 9.1 Tm min hot ng ca FET khi bit VG, VD, VS v Vp (vi JFET) hoc VTH (vi MOSFET) Xc nh min lm vic ca cc N-EMOS M1 trong mch sau: (bit VTH=0.4V)

Hnh E9.1 9.2 Vi mch hnh E9.2, hy tm VR nu bit VDD=2V, VGG=5V, R= 1K , VTH=2V v K= 20A/V2.

Hnh E9.2 Hnh E9.3 9.3Vi mch hnh E9.3, hy tm VDS1? Gi s Q1 v Q2 ging nhau, nu bit E=10V, R1=10K, R2=15K, VTH=2V v K= 100A/V2. 9.4 Cc ch ca t MOS khi bit VTH v VGS. 9.5 Thc hin ngun dng vi JFET ch bo ha.

Ch : Phng trnh dng ID ca N-JFET v N-EMOS min Ohm nh sau: 2

I D = K (2(VGS VTH )VDS VDS )

I D 2 K (VGS VTH )VDS

Nu VDS << 2(VGD VTH) th

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