.
    .
... #$#( p-n) )*+  $#(  .
KFUPM 6 - 234 . :
 -# . /
 . .
E-mail: natabet@kfupm.edu.sa
Tel. 3 860 2443/4105

 .
Conductors

 

 .
I

V
V

V= R
L

(.m)

 

R = L/A
= 1/

(1.m-1)

 



V = 1 mV
L = 10 cm
A= 1 mm 2

A
L

I = 0.6 A

= 6x 107 1m-1

Cu

I = 2 10-8 A, = 2 1m-1
I < 10-20 A, < 1013 1m-1

Ge
Al2O3

8$
$:


(*

:
          



 


J=n q v



    )   ( n:

A/cm2 :

Conductors

Metals

 


Conductors

Metals

 


Conductors

Metals

 

E !

$ &cm-3 :(

  

   

! 
 

Drift velocity
 

( 0 .

( 0 +/.

v=E

( 0 .

( 0 +/.

+, *) =


  

v= E
J=nq E
J= E

  : Mobility

I /A = V/L

V= (
-1 L/A ) I

=nq
%&"! '#$

(Defects) "! #$


 
#

)

>
# =3
)

>
#
=3 #


 

 "!   
 $


* )  ' &!%
 ,-$

 12* ) ! 0! 

./$

V0

V
V0

 3"4 .
Semiconductors

(Diamond)

C, Si, Ge, Sn


 5"



ZnS 5.


GaAs, AlAs, ZnSe, CdS,InSb

Semiconductors

(Silicon )

3"4 .

*&

T = 0K

()$ *!

()$  

? 

Semiconductors

7- :$!:

)-



 

cm-3  

T = K 1

@
? $
>= <;-
2p4

2s2

1s2

4

+$

@
? $
>= <;-
)4 N

5.6

2p

5.6

2s

2N

5.6

1s

2N

4N

)+.+ :

@
? $
>= <;-
*5

5.6

2p

5.6

2s

5.6

1s

()

- 3"4 


-(4 &67



=<; -(4 ::

?@4

T = 0K

= ?@4 CD 

 - 3"4



?@4 CD=
?@=<;

Eg <5eV

5*

Eg >5 eV

-(4 ::=<;

Eg (eV)

"#$
&

Ge Si
InP GaAs CdTe CdSe CdS SiC ZnO GaN Al2O3
0.66 1.12 1.35 1.43 1.45 1.73 2.42 2.86 3.4
3.5
8
 

MgO SiO2 CaO

9
8
9



$B )D)
 



 

Ec
Ev

pi = ni
(Valence Band):

:=<;

Si:
Ge

: "'()* +, &#

ni = 1010cm-3
ni = 3. 1013 cm-3

<E
$
-;
Electron Hole Recombination
   

 

E$ E  1

E $ D

Eg
Eph=Eg(eV)=1.24/(m)



(Valence Band):

:=<;

(Doped Silicon) n

*&  (
D$H IJ 

:K(L (( E4 D&=

P, As, Sb,..

()$  

 .) E CD 8$

A
(#$ 8
  

 
 D&'! ;D$4( 

D0
D+

 

=&(D+) 1<:4  4 D
ND ~ n

=&(D0) 1<:4 M  4 D

 5  NO': 1

ND + p = n

(Doped Silicon) p

*&  (
M=  P54

: (( E4 DK D&=

B, Al, In, Ga,..

()$  


A CD F E).
 
 

 

A-

A0


(A0) 1<:4 M DK D&=
NA + n = p

(A-) 1<:4 DK D&=

: 1' NO  5

NA ~ p

: 

G
"4! >=

n p
- +
- +

  Q E R$ $

= n q n

+
+
- + +
+
+
+
-

O Q E R$ $

= p q p

 . 
:
 p-n :
  

 p-n :
Na= p



Nd= n

  

+ -+ - + + +
-+
+
- + +

+
++
+
+

 "!

 

+
+
+
+

+ -+ - + + +
-+
+
+
+
-

(V=0, I=0) >= ! :p-n 

57!

$%& $()

Nd= n

+ - + +
- - +
+
+
- + +
Neutral n- region
(  ) 
 
n  

Depleted region

Na= p

- +
+
+
Neutral p- region

E4 MO4'  4 Q*14
O  

(  ) 
 
p  

   !" #$% &'%

  Forward bias

V
V

, )( $+*$

+
+

+
-

+
, )( $-&$%

    

- -- +

   !" #$% &'%

  Reverse bias

V
V
, )( $+*$

+
+

+
, )( $-&$%

 "!



- -- +

=*
I ;/* 12 J) 
57!
I=I0 exp[(qV/kT)-1]
12.0
11.0
10.0
9.0

Ge

Si

Current (mA)

8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Voltage (V)

0.8

0.9

1.0

1.1

1.2

L! 7
"
 57!
Light Emitting Diode (LED)

Forward bias 

V
V
R

Eph=Eg (eV)=1.24/(m)

- - - - + GaN: 3.5eV, ZnO: 3.4eV, = 0.35

35m :

+
+
+ +
+ !!!  2

 : 5O- ,-<

- )(

!'4 ST14






=(Ge) ?@4 CD

http://www.techfak.uni-kiel.de/matwis/amat/elmat_en/kap_4/backbone/r4_1_2.html

InP and GaAs-based Heterojunction Bipolar Transistors (HBTs)

http://www.eecs.umich.edu/dp-group/HBT/

MOSFET

: 

http://www.columbia.edu/~oj15/materials/transistor


*!5$
5 O ;.
; & /(((

http://www.research.ibm.com/nanoscience/fet.html

; V
L  : >=
.$ :; ,5 %