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Electronic Devices and Circuit Theory: Field-Effect Transistors
Electronic Devices and Circuit Theory: Field-Effect Transistors
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Field-Effect Transistors
Chapter 6
Ch.6 Summary
Amplifiers
Switching devices
Impedance matching circuits
Differences:
Ch.6 Summary
FET Types
JFET: Junction FET
MOSFET: MetalOxideSemiconductor FET
D-MOSFET: Depletion MOSFET
E-MOSFET: Enhancement MOSFET
Ch.6 Summary
JFET Construction
There are two types of JFETs:
n-channel
p-channel
The n-channel is the more widely used
of the two.
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
VGS(off).
Note that at high levels of VDS the JFET reaches a breakdown situation. ID
increases uncontrollably if VDS > VDSmax, and the JFET is likely destroyed.
Electronic Devices and Circuit Theory
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Ch.6 Summary
Voltage-Controlled Resistor
The region to the left of the
pinch-off point is called the
ohmic region.
The JFET can be used as a
variable resistor, where VGS
controls the drain-source
resistance (rd).
rd
ro
VGS
1
V
P
Ch.6 Summary
P-Channel JFETs
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
ID I
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GS
DSS 1 V
P
Ch.6 Summary
Ch.6 Summary
ID = 0 A
ID I
GS
DSS 1 V
P
Ch.6 Summary
Electrical
Characteristics
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
Testing JFETs
Curve Tracer
A curve tracer displays the ID versus VDS graph for
various levels of VGS.
Ch.6 Summary
MOSFETs
MOSFETs have characteristics similar to those of
JFETs and additional characteristics that make then
very useful.
Enhancement-Type
Ch.6 Summary
Ch.6 Summary
Depletion mode
Enhancement mode
Ch.6 Summary
ID I
GS
DSS 1 V
P
Ch.6 Summary
ID I
GS
DSS 1 V
P
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
Specification Sheet
Maximum Ratings
Ch.6 Summary
Specification Sheet
Electrical
Characteristics
Ch.6 Summary
Ch.6 Summary
Ch.6 Summary
ID k (VGS VT )2
where:
VT = the E-MOSFET
threshold voltage
k, a constant, can be
determined by using
values at a specific point
and the formula:
ID(ON)
k
(VGS(ON) VT)2
VDSsat VGS VT
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Ch.6 Summary
Ch.6 Summary
MOSFET Symbols
Ch.6 Summary
Specification Sheet
Maximum Ratings
more
Ch.6 Summary
Specification Sheet
Electrical
Characteristics
Ch.6 Summary
Handling MOSFETs
MOSFETs are very sensitive to static electricity.
Because of the very thin SiO2 layer between the external terminals
and the layers of the device, any small electrical discharge can
create an unwanted conduction.
Protection
Always transport in a static sensitive bag
Always wear a static strap when handling MOSFETS
Apply voltage limiting devices between the gate and source,
such as back-to-back Zeners to limit any transient voltage.
Electronic Devices and Circuit Theory
Boylestad
Ch.6 Summary
VMOS Devices
VMOS (vertical MOSFET) is a component structure that
provides greater
surface area.
Advantages
VMOS devices handle
higher currents by
providing more surface
area to dissipate the heat.
Ch.6 Summary
CMOS Devices
CMOS (complementary MOSFET) uses a p-channel and
n-channel MOSFET; often on the same substrate as
shown here.
Advantages
Useful in logic circuit designs
Higher input impedance
Faster switching speeds
Lower operating power levels
Ch.6 Summary
Summary Table