1338163472.5543Ch04 Bipolar Junction Transistors (BJTS) (41 PP) PDF

Basic Electronic Devices and Circuits
EE 111
Electrical Engineering
Majmaah University
2nd Semester 1432/1433 H
Chapter 4
Bipolar Junction Transistors (BJTs)
Electronic Devices, 9th edition

Thomas L. Floyd
2012 Pearson Education. Upper Saddle River, NJ, 07458.

All rights reserved.
Introduction
The invention of the transistor was the beginning of a
technological revolution that is still continuing.
All of the complex electronic devices and systems today are
an outgrowth of early developments in semiconductor
transistors.
Two basic types of transistors are
the bipolar junction transistor (BJT),
and the field-effect transistor (FET).
The BJT is used in two broad areas
as a linear amplifier to boost or amplify an electrical
signal,
as an electronic switch.
The term bipolar refers to the use of both holes and electrons
as current carriers in the transistor structure.
Thomas L. Floyd

BJT Structure
The BJT has three regions called the emitter, base, and
collector. Between the regions are junctions as indicated.
The base is a thin
lightly doped region
compared to the
heavily doped emitter
and moderately doped
collector regions.
C (collector)
n
B
(base)
Base-Collector
junction
p
n
npn
p
B
Base-Emitter
junction
E (emitter)

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n
p
pnp
BJT Structure

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C (collector)
BJT Symbols
n
B
(base)
Base-Collector
junction
p
n

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p
B
Base-Emitter
junction
E (emitter)
npn
n
p
pnp

BJT Biasing
In normal operation, the base-emitter (BE) is forwardbiased and the base-collector (BC) is reverse-biased.
BC reversebiased
For the npn type shown, the

collector is more positive
than the base, which is more
positive than the emitter.
Cn
En
B p
+
BE forwardbiased
npn

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BJT Biasing
In normal operation, the base-emitter (BE) is forwardbiased and the base-collector (BC) is reverse-biased.
For the pnp type, the voltages

are reversed to maintain the
forward-reverse bias.
BC reversebiased
Cp
Ep
B n+
BE forwardbiased
pnp

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BJT Operation (npn)
Direction of
electron
flow:

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IE = IC + IB

BJT Operation (npn)
The heavily doped n-type emitter region has a very high

density of conduction-band (free) electrons.
These free electrons easily diffuse through the forwardbiased BE junction into the lightly doped and very thin p-type
base region (wide arrow).
The lightly doped p-type base has a low density of holes,
which are the majority carriers (white circles).
A small percentage of the total number of free electrons
injected into the base region recombine with holes and move
as valence electrons through the base region, and holes into
the emitter region as hole current (red arrows).

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BJT Operation (npn)

When the electrons that have recombined with holes as valence
electrons leave the crystalline structure of the base, they become free
electrons in the metallic base lead and produce the external base
current.
Most of the free electrons that have entered the base do not
recombine with holes because the base is very thin (no enough holes).
As the free electrons move toward the reverse-biased BC junction,
they are swept across into the collector region by the attraction of the
positive collector supply voltage.
The free electrons move through the collector region, into the
external circuit, and then return into the emitter region along with the
base current (IE = IC + IB).
The emitter current is slightly greater than the collector current
because of the small base current that splits off from the total current
injected into the base region from the emitter (IE = IC + IB).
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10
BJT Currents
The direction of conventional current is in the direction of the arrow
on the emitter terminal.
The emitter current is the sum of the collector current and the small
base current. That is, IE = IC + IB.
+
IC
IC
IC
IC
IB
IB
IB
IB
n
p
IE
IE
IE
IE
npn
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pnp
11
DC Bias Circuits

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12
DC Beta (DC) and DC Alpha (DC)

The dc current gain of a transistor is the ratio of the dc collector current (IC)
to the dc base current (IB) and is designated dc beta (DC).
Typical values of DC range from less than 20 to 200 or higher.
The ratio of the dc collector current (IC) to the dc emitter current (IE) is the
dc alpha (DC).
The alpha is a less-used parameter than beta in transistor circuits.
Typically, values of DC range from 0.95 to 0.99 or greater, but DC is
always less than 1.
The reason is that IC is always slightly less than IE by the amount of IB
(IE = IC + IB).
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13
DC Beta (DC) and DC Alpha (DC)

Example:
If IE = 100 mA and IB = 1 mA,
then
IC = IE IB = 100 1 = 99 mA
and
DC = IC / IE = 99 / 100 = 0.99.

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14
Transistor DC Model
Unsaturated BJT.
forward-biased diode

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15
BJT Circuit Analysis

IB: dc base current
IE: dc emitter current
IC: dc collector current
VBE: dc voltage at base
with respect to emitter
VCB: dc voltage at
collector with respect
to base
VCE: dc voltage at
collector with respect
to emitter
KCL: IE = IC + IB
KVL: VCE = VCB + VBE
VBB forward-biases the BE junction, and VCC reverse-biases the BC junction.

When BE is forward-biased, it is like a forward-biased diode and has a
nominal forward voltage drop of ~0.7 V
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16
>0
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17
BJT Characteristics
The collector characteristic curves show the relationship
of the three transistor currents.
IC
The curve shown is for a fixed

base current. The first region is
the saturation region. As VCE is
increased, IC increases until B.
Then it flattens in the region
between points B and C, which
is the active region.
After C, is the breakdown
region.
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Breakdown
region
B
Active region
Saturation
region
IC versus VCE curve

for one value of IB
A
0
0.7 V
VCE(max)
VCE

18
BJT Characteristics
Consider point A on the characteristic curve:
Assume that VBB is set to produce a certain value of IB and VCC is zero.
For this condition, both the BE junction and the BC junction are forwardbiased,
because the base is at approximately 0.7 V while the emitter and the
collector are at 0 V.
IB is through the BE junction,
because of the low impedance path to ground and, therefore, IC is zero.
When both junctions are forward-biased, the transistor is in the saturation
region of its operation.
Consider the portion of the curve between points A and B:
Saturation is the state of a BJT in which IC has reached a maximum and is
independent of IB (IC DC IB). IB is constant, but IC is increasing.
When VCC is increased, VCE increases as IC increases.
IC increases as VCC is increased because VCE remains less than 0.7 V due
to the forward-biased BC junction.
VCE = VCB + VBE = negative + 0.7 < 0.7
and IC = (VCC VCE) / RC
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19
BJT Characteristics
Consider the portion of the curve between points B and C:
Ideally, when VCE exceeds 0.7 V, the BC junction becomes reverse-biased
and the transistor goes into the active, or linear, region of its operation.
Once the BC junction is reverse-biased, IC levels off and remains
essentially constant for a given value of IB as VCE continues to increase.
Actually, IC increases very slightly as VCE increases due to widening of the
BC depletion region.
This results in fewer holes for recombination in the base region which
effectively causes a slight increase in DC.
For this portion of the characteristic curve, the value of IC is determined
only by the relationship IC = DC IB.
Consider the portion of the curve to the right of point C:
When VCE reaches a sufficiently high voltage, the reverse-biased BC
junction goes into breakdown; and IC increases rapidly.
A transistor should never be operated in this breakdown region.
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20
BJT Characteristics
By setting up other values of
base current, a family of
collector curves is developed.
Family of IC versus VCE curves for

several values of IB (IB1< IB2< IB3, etc.)
IC
IB6
IB5
DC is the ratio of collector

current to base current.
DC =
IB3
IC
IB
It can be read from the curves.

The value of DC is nearly the
same wherever it is read.
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IB4
IB2
IB1
Cutoff region
IB = 0
VCE

21
BJT Characteristics
A family of collector characteristic curves is produced when
IC versus VCE is plotted for several values of IB.
When IB = 0, the transistor is in the cutoff region although
there is a very small collector leakage current.
Cutoff is the non-conducting state of a transistor.
The amount of collector leakage current for IB = 0 is
exaggerated on the graph for illustration.

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22

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23

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24
BJT Characteristics
What is the DC for the transistor shown?
I C (mA)
Choose a base current near the

center of the range. In this case
IB3 which is 30 A.
Read the corresponding
collector current in this case,
5.0 mA. Calculate the ratio:
DC
I
5.0 mA
= C =
= 167
I B 30 A

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10.0
IB6 = 60 A
IB5 = 50 A
8.0
IB4 = 40 A
6.0
4.0
2.0
I B3 = 30 A
IB2 = 20 A
IB1 = 10 A
IB = 0
VCE

25
Cutoff
In a BJT, cutoff is the condition in which there is no base
current (IB = 0), which results in only an extremely small
leakage current (ICEO 0) in the collector circuit (due mainly
to thermally produced carriers).
For practical work, this current is assumed to be zero.
In cutoff, neither the BE junction,
nor the BC junction are forwardbiased.
RC
RB
ICEO
VCE VCC
IB = 0
VCC
The subscript CEO represents

collector-to-emitter with the base
open.
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26
Saturation
In a BJT, saturation is the condition in which there is
maximum IC.
The saturation current is determined by the external circuit
(VCC and RC in this case) because the CE voltage is minimum
(VCE 0.2 V). VCE = VCC IC RC
In saturation, an increase of IB has

no effect on the collector circuit and
the relation IC = DC IB is no longer
valid.

Thomas L. Floyd
RC
IC
RB
+
VCE = VCC IC RC
+
VBB
IB
+
VCC

27
Saturation
When the BE junction becomes forward-biased and IB is
increased, IC also increases (IC = DC IB),
and VCE decreases as a result of more drop across RC,
VCE = VCC IC RC
When VCE reaches its saturation value, VCE(sat), the BC junction
becomes forward-biased and IC can increase no further, even with
a continued increase in IB.
At the point of saturation, the relation IC = DC IB is no longer
valid.
VCE(sat) for a transistor occurs somewhere below the knee of the
collector curves, and it is usually only a few tenths of a volt.
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28
DC Load Line
The DC load line represents the circuit that is external to
the transistor. It is drawn by
I
connecting the saturation
Saturation
I
and cutoff points.
C
C(sat)
The transistor characteristic

curves are shown superimposed
on the load line.
The region between the
saturation and cutoff points is
called the active region.
Thomas L. Floyd
Cutoff
IB = 0
0 VCE(sat)
VCC
VCE

29
DC Load Line
RC
What is the saturation current for the

circuit? Assume VCE = 0.2 V in
saturation.
ISAT =
3.3 k
RB
DC = 200
V BB
3V
220 k
VCC
15 V
VCC 0.2 V 15 V 0.2 V

=
= 4.48 mA
RC
3.3 k
Is the transistor saturated? I B =
3.0 V 0.7 V
= 10.45 A
220 k
IC = IB = 200 (10.45 A) = 2.09 mA

Since IC < ISAT, it is not saturated.
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30

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31
(repeated)

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32
DC and AC Quantities
The text uses capital letters for both AC and DC currents (I) and voltages
(V), with rms values assumed unless stated otherwise.
DC Quantities use upper case roman subscripts. Example: VCE. The
second letter in the subscript indicates the reference point ().
AC Quantities and time varying signals use lower case italic
subscripts. Example: Vce.
Internal transistor resistances are indicated as lower case
quantities with a prime and an appropriate subscript. Example: re.
External resistances are indicated as capital R with either a
capital or lower case subscript depending on whether it is a DC or
ac resistance. Examples: RC and Rc.
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39
BJT Amplifiers
A BJT amplifies AC signals by converting some of the DC power from
the power supplies to AC signal power.
An ac signal at the input is superimposed in the dc bias by capacitive
coupling.
The output ac signal is inverted and rides on a dc level of VCE.
RC
Vin
VBB
RB
0
Vc
r e
Vin
Vc
VCC
+
VBB
Vb
VCE
0
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40

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41
IC
BJT Switches
Saturation
IC(sat)
A BJT can be used as a switching device

in logic circuits to turn on or off current to
a load. As a switch, the transistor is
normally in either cutoff (load is OFF) or
saturation (load is ON).
+VCC
RC
RB
IC = 0
+VCC
RC
RC
RB
+VBB
0V
IB = 0
In cutoff, the transistor

looks like an open switch.
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0 VCE(sat)
+VCC
Cutoff
IB = 0
IB
VCC
V CE
+VCC
IC(sat)
IC(sat)
RC
C
In saturation, the transistor

looks like a closed switch.
42

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43

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44
A Sample of Common Transistor Packages

3 Collector
3 Collector
2
Base
1
1
Base
1 Emitter
2
3 Collector
3
2
Base
2 Emitter
1 Emitter
3 2
TO-92
SOT-23
TO-18
C
B
C (case)
B
C
E
TO-3
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E
C
TO-220AB
TO-225AA
45
Selected Key Terms

BJT (bipolar a transistor constructed with three doped
junction semiconductor regions separated by two pn
transistor) junctions.
Emitter the most heavily doped of the three
semiconductor regions of a BJT.
Base one of the three semiconductor regions of a BJT.
The base is thin and lightly doped compared to
the other regions.
Collector the largest of the three semiconductor regions of
a BJT.
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46
Selected Key Terms

Beta
Saturation
Cutoff

Thomas L. Floyd
the ratio of dc collector current to the dc base

current in a BJT; current gain from base to
collector.
the state of a BJT in which the collector
current has reached a maximum and is
independent of the base current.
the nonconducting state of a transistor.

47

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Basic Electronic Devices and Circuits

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

For the npn type shown, the

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

For the pnp type, the voltages

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT Operation (npn)

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT Operation (npn)

The heavily doped n-type emitter region has a very high

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT Operation (npn)

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

DC Beta (DC) and DC Alpha (DC)

2012 Pearson Education. Upper Saddle River, NJ, 07458.

DC Beta (DC) and DC Alpha (DC)

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT Circuit Analysis

KVL: VCE = VCB + VBE

VBB forward-biases the BE junction, and VCC reverse-biases the BC junction.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

The curve shown is for a fixed

IC versus VCE curve

2012 Pearson Education. Upper Saddle River, NJ, 07458.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Family of IC versus VCE curves for

DC is the ratio of collector

It can be read from the curves.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

Choose a base current near the

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

The subscript CEO represents

2012 Pearson Education. Upper Saddle River, NJ, 07458.

In saturation, an increase of IB has

Electronic Devices, 9th edition

2012 Pearson Education. Upper Saddle River, NJ, 07458.

2012 Pearson Education. Upper Saddle River, NJ, 07458.

The transistor characteristic