Diode equivalent circuits

1. Access resistances in vertical devices

Top metal contact

There is an access resistance connected

in series with an ideal diode D
(the diode can be of any type, i.e. rectifier,
LED, Varicap, Tunnel diode etc.).

Area = A

Rcp

p-type

Rsp

dp

Total access (series) resistance for the

diode on the left:

Rs = Rcp+Rsp + Rsn + Rcn

n-type

Rcn

Bottom metal
contact

Rsn

dn

Rcp= cp/A; Rcn= cn/A

Note the difference between lateral and vertical
contacts. For lateral contacts, a unit-width
contact resistance (mm or cm) is typically
used.
For vertical contacts, a unit-area specific
resistance (mm2 or cm2) is typically used.

1. Access resistances in vertical devices (cont.)

Top metal contact

The series resistance associated with the

diode base regions: Rsp and Rsn:

Area = A

Rcp

p-type

Rsp

dp

1
Rsp = p
; where p =
A
q pp
is the resistivity of the p material

dn

dn
1
Rsn = n
; where n =
A
q n n
is the resistivity of the n material

D
n-type

Rcn

Bottom metal
contact

Rsn

dp

1. Access resistances in vertical devices (cont.)

Diode low-frequency equivalent circuit
Top metal contact

Area = A

Rcp

p-type

Rsp
D

n-type

Rcn

Rs
V

Rs = Rcp+Rsp + Rsn + Rcn

Rsn
For a regular p-n junction diode,
the total voltage drop across the device:

Bottom metal
contact

V = VD + VRS
VD = (kT/q) ln(I/Is+1);
VRs = I Rs

1. Access resistances in vertical devices (cont.)

Diode low-frequency equivalent circuit
Top metal contact

Area = A

Ignoring Rs

Rcp

IRs

p-type

Rsp
3
I, A

D
n-type

Rcn

Rs
V

D
Rsn

1
0
0

0.2

0.4

0.6

-1

Bottom metal
contact

V, V

0.8

2. Access resistances in lateral devices

Example: planar GaAs Schottky diode

Schottky

Ohmic
W

n-GaAs

Rc = Rc1 /W;

i-GaAs

LSch

Lgap

Total access (series) resistance for the

diode on the left:
Rs = Rc+Rgap+ RSch

Rgap = Rsq Lgap / W;

LC

RSch Rsq (LSch / 3) / W; - accounts for the

current spreading under the Schottky contact.

3. High-frequency equivalent circuits

Example: vertical Schottky diode
At high frequencies, capacitances and inductances associated with the diode
itself and the package have significant impact on the device performance

A
CB = S 0
Wdepl

CB

D
n-type

Rs(incl. Rc)

Lp

capacitance associated with the

diode depletion region
Cp

Cp - the capacitance associated with

the device contact pads or package

Lp - the inductance associated with the

device wiring and/or package

3. High-frequency equivalent circuits

Frequency dependence of the device impedance
Example: Consider Schottky diode with the DC differential resistance of 10 .
Comment: the differential resistance, R = V = kT I 0.026V at 300 K ;
d
I
I q
Suppose: CB = 20 pF; Cp = 5 pF;
Rs = 1 ; Lp = 0.5 nH

CB

Rs

Cp

The diode impedance can be found as follows:

1. Yd1 = 1/Rd + jCB; Zd1 = 1/ Yd1; where =2f;
2. Zd2 = Zd1 + Rs; Yd2 = 1/Zd2;

Lp

3. Yd3 = Yd2 + jCp; Zd3 = 1/ Yd3;

4. Zdiode = Zd3 + jLp;

Diode impedance frequency dependence

%Diode impedance frequency dependence

Yd1 = 1/Rd + i*om*CB;

%Suppose: Rd=10 Ohm;

Zd1 = 1./Yd1;

%CB = 20 pF; Cp = 5 pF;

Zd2 = Zd1 + Rs;

%Rs = 1 Ohm; Lp = 0.5 nH

Yd2 = 1./Zd2;
Yd3 = Yd2 + i*om*Cp;

Rd=10;

Zd3 = 1./Yd3;

CB = 20e-12;

Zdiode = Zd3 + i*om*Lp;

Cp = 5e-12;

Req=real(Zdiode);

Rs = 1;

Xeq=imag(Zdiode);

Lp = 0.5e-9;

figure(1);

%<<<Calculations>>>>>

plot(f*1e-6,Req);

f=1e6:1e6:3e9;

figure(2);

om=2*pi*f;

plot(f*1e-6,Xeq);

Diode impedance frequency dependence

CB

Rs

Lp

Cp

Diode impedance frequency dependence

CB

Rs

Lp

Cp