VLSI DESIGN B. Tech. (EC) Sem. VI By : Usha Mehta Reference : S. M. Kang and Y.

Leblebici, CMOS Digital Integrated Circuits : Analysis and Design, Third Edition, MH Chapter: DYNAMIC LOGIC CIRCUITS Session: II Topic: Basic Principal of Pass Transistor Circuits: Logic 0 transfer, Charge Storage and Charge Leakage Basic Principal of Pass Transistor Circuits: Logic 0 transfer Determine Vx(t) Assume at t = 0: Vx (t = 0) = Vmax = VDD - VTnMP Vin = 0V CK = 0 -> VDD VGS = VDD, VDS = Vmax = VDD VT,nMP VDS < VGS - VT0,nMP => nMOS in LIN for all Vx < Vmax *All mathematical equations will be solved in class Charge Storage and Charge Leakage

Charge leakage is mainly due to leakage current associated with pass transistors The gate current of the inverter driver is negligible for all practical purpose but the main components of leakage current are : 1. subthresold channel current 2. Reverse conduction current Voltage Bootstrapping This concept is mainly used to overcome the threshold voltage drops in circuits like pass transistors, transmission gates, enhancement load inverters and logic gates.

Usha Mehta / B. Tech. / Sem. VI / VLSI Design